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31. 发明申请

US20060183751A1 Pyrazole compounds 失效
标题翻译：吡唑化合物
公开(公告)号：US20060183751A1
公开(公告)日：2006-08-17
申请号：US11058852
申请日：2005-02-15
申请人： Youhong Hu , Bin Xu , Yun Liao , Kenneth Nawoschik , Yixin Liu , Anthony Sandrasagra , Reza Fathi , Zhen Yang
发明人： Youhong Hu , Bin Xu , Yun Liao , Kenneth Nawoschik , Yixin Liu , Anthony Sandrasagra , Reza Fathi , Zhen Yang
IPC分类号： A61K31/496 , A61K31/454 , A61K31/416
CPC分类号： C07D231/12 , A61K31/415 , A61K31/4155 , A61K31/4162 , A61K31/427 , A61K31/4439 , A61K31/454 , A61K31/496 , A61K31/5377 , A61K45/06 , C07D231/14 , C07D401/06 , C07D401/10 , C07D405/10 , C07D405/12 , C07D409/10 , C07D417/12 , C07D491/052
摘要： Aryl substituted pyrazole derivatives are provided, as well as processes for their preparation. The invention also provides compositions and methods for the treatment of HCV by administering a compound of the present invention, alone or in combination with additional antiviral agents, in a therapeutically effective amount.
摘要翻译：提供了芳基取代的吡唑衍生物，以及其制备方法。本发明还提供了治疗HCV的组合物和方法，其通过以治疗有效量施用单独或与其它抗病毒剂组合的本发明化合物。

32. 发明授权

US06855822B2 Benzo[b]furan dimers 失效
标题翻译：苯并[b]呋喃二聚体
公开(公告)号：US06855822B2
公开(公告)日：2005-02-15
申请号：US10602341
申请日：2003-06-23
申请人： Yun Liao , Reza Fathi , Zhen Yang
发明人： Yun Liao , Reza Fathi , Zhen Yang
IPC分类号： C07D307/86 , C07D405/14 , C07D241/02 , C07D303/38 , C07D405/00
CPC分类号： C07D405/14 , C07D307/86
摘要： Benzo[b]furan dimers and processes for their preparation are provided. The invention provides a synthetic process for the preparation of benzo[b]furan dimer using mild reaction conditions, which provides a high substituent tolerance and is appropriate for use in solid phase syntheses for producing a library of benzo[b]furan dimers for biological screening.
摘要翻译：提供了苯并[b]呋喃二聚体及其制备方法。本发明提供了一种使用温和的反应条件制备苯并[b]呋喃二聚体的合成方法，其提供高的取代基耐受性，并且适用于制备用于生物筛选的苯并[b]呋喃二聚体文库的固相合成。

33. 发明授权

US06660758B1 Epothilone analogs 失效
标题翻译：埃博霉素类似物
公开(公告)号：US06660758B1
公开(公告)日：2003-12-09
申请号：US09319885
申请日：1999-09-24
申请人： Kyriacos C. Nicolaou , Yun He , Sacha Ninkovic , Joaquin Pastor , Frank Roschangar , Francisco Sarabia , Hans Vallberg , Dionisios Vourloumis , Nicolas Winssinger , Zhen Yang , Nigel Paul King , M. Ray Finlay
发明人： Kyriacos C. Nicolaou , Yun He , Sacha Ninkovic , Joaquin Pastor , Frank Roschangar , Francisco Sarabia , Hans Vallberg , Dionisios Vourloumis , Nicolas Winssinger , Zhen Yang , Nigel Paul King , M. Ray Finlay
IPC分类号： C07D41306
CPC分类号： C07D417/06 , C07D313/00 , C07D493/04
摘要： Epothilone A, epothilone B, analogs of epothilone and libraries of epothilone analogs are synthesized. Epothilone A and B are known anticancers agents that derive their anticancer activity by the prevention of mitosis through the induction and stabilization of microtubule assembly. The analogs of epothilone are novel. Several of the analogs are demonstrated to have a superior cytotoxic activity as compared to epothilone A or epothilone B as demonstrated by their enhanced ability to induce the polymerization and stabilization of microtubules.
摘要翻译：埃博霉素A，埃坡霉素B，埃坡霉素类似物和埃坡霉素类似物文库合成。埃博霉素A和B是已知的抗癌剂，通过微管组装的诱导和稳定来预防有丝分裂，从而获得抗癌活性。埃坡霉素的类似物是新颖的。与埃坡霉素A或埃坡霉素B相比，几种类似物被证明具有优异的细胞毒性活性，如通过增强诱导微管聚合和稳定化的能力所证实的。

34. 发明授权

US4643741A Thermostable polycrystalline diamond body, method and mold for producing same 失效
标题翻译：耐热多晶金刚石体，其制造方法和模具
公开(公告)号：US4643741A
公开(公告)日：1987-02-17
申请号：US681549
申请日：1984-12-14
申请人： Hongchang Yu , Zhen Yang , Chaodong Wang , Zhongqing Zai
发明人： Hongchang Yu , Zhen Yang , Chaodong Wang , Zhongqing Zai
IPC分类号： B01J3/06 , B24D3/06 , B24D18/00 , B30B11/00 , B30B15/34 , B24B1/00
CPC分类号： C04B35/52 , B01J3/062 , B22F3/15 , B24D18/0009 , B24D3/06 , B30B11/004 , B30B11/007 , B30B15/34 , C04B35/6316 , C04B35/645 , C22C1/101 , C22C26/00 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , C04B2235/3821 , C04B2235/3826 , C04B2235/3834 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/421 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/6567 , C04B2235/80 , C04B2235/96
摘要： A thermostable polycrystalline diamond body is produced by pre-treating the diamond crystals with molten base or salt, mixing the pre-treated diamond crystals with silicon powder or a blend of silicon and one or more substances, subjecting the mixture to a combination of high-pressure and high-temperature and maintaining the pressure and temperature for a period of time. The thermostable polycrystalline diamond body is characterized in having diamond crystals uniformly distributed in the body. The diamond crystals are covered by .beta.-silicon carbide and that the diamond crystals together with .beta.-silicon carbide form an uninterrupted framework throughout the entire body, the interstices of which are filled with elemental silicon or silicon-containing refractory phases. A polygonal graphite mold having walls of equal thickness useful in the production of said thermostable polycrystalline diamond body is also provided.
摘要翻译：通过用熔融的碱或盐对金刚石晶体进行预处理，将预处理的金刚石晶体与硅粉末或硅与一种或多种物质的混合物混合，使混合物与高分子材料结合，压力和高温，并保持一段时间的压力和温度。耐热多晶金刚石体的特征在于具有均匀分布在体内的金刚石晶体。金刚石晶体被β-碳化硅覆盖，并且金刚石晶体与β-碳化硅一起形成整个整体的不间断框架，其间隙填充有元素硅或含硅难熔物相。还提供了具有相当厚度壁的多边形石墨模具，其用于生产所述耐热多晶金刚石体。

35. 发明授权

US08933075B2 Compounds useful as antiviral agents, compositions, and methods of use 有权
标题翻译：可用作抗病毒剂，组合物和使用方法的化合物
公开(公告)号：US08933075B2
公开(公告)日：2015-01-13
申请号：US13703383
申请日：2011-06-17
申请人： Guoxin Wang , Ming Luo , Zhen Yang
发明人： Guoxin Wang , Ming Luo , Zhen Yang
IPC分类号： C07D417/14 , C07D417/06 , A61K31/44 , A61K31/415 , A61K31/425 , C07D233/38 , C07D277/00 , A01N43/50
CPC分类号： C07D417/14 , C07D417/06
摘要： Novel 3-N-cycloalkyl-5-substituted-2-thioxothiazolidin-4-one derivatives that are effective for use in treating viral infections are described. Also described are pharmaceutical compositions comprising the 3-N-cycloalkyl-5-substituted-2-thioxothiazolidin-4-one derivatives and methods for using the compounds or compositions.
摘要翻译：描述了有效用于治疗病毒感染的新的3-N-环烷基-5-取代-2-硫代噻唑烷-4-酮衍生物。还描述了包含3-N-环烷基-5-取代-2-硫代噻唑烷-4-酮衍生物的药物组合物和使用该化合物或组合物的方法。

36. 发明授权

US08648578B2 Capless low drop-out voltage regulator having discharge circuit compensating for on-chip output capacitance and response time 有权
标题翻译：具有放电电路补偿片上输出电容和响应时间的无限低压降稳压器
公开(公告)号：US08648578B2
公开(公告)日：2014-02-11
申请号：US12679485
申请日：2008-09-29
申请人： Hui Zhao , Zhen Yang
发明人： Hui Zhao , Zhen Yang
IPC分类号： G05F1/613
CPC分类号： G05F1/571
摘要： A voltage regulator is provided having one or more discharger circuits that compensate for low on-chip output capacitance and a slow loop response time. In one embodiment, the voltage regulator includes an output transistor coupled to an output voltage line, an output voltage sensing arrangement coupled to the output voltage line for producing an output feedback voltage, and an error amplifier coupled to the output feedback voltage, the output transistor, and a reference voltage for applying feedback control to the output transistor. A first discharger circuit is coupled to the output voltage line and to a reference potential, the first discharger circuit being triggered by a steep-rise overvoltage condition. In another embodiment, a combination of fast and slow discharger circuits is used to improve the load step response—i.e., to stop the output voltage from jumping too high and to pull it back to stable value very quickly, such that the load circuits are protected.
摘要翻译：提供了具有一个或多个放大器电路的电压调节器，其补偿片上输出电容的低电平和缓慢的环路响应时间。在一个实施例中，电压调节器包括耦合到输出电压线的输出晶体管，耦合到输出电压线的输出电压感测装置，用于产生输出反馈电压，以及耦合到输出反馈电压的误差放大器，输出晶体管以及用于向输出晶体管施加反馈控制的参考电压。第一放电电路耦合到输出电压线和参考电位，第一放电电路由陡升过压状态触发。在另一个实施例中，使用快速和慢速放电器电路的组合来改善负载阶跃响应 - 即停止输出电压跳跃太高并将其非常快地拉回稳定值，使得负载电路被保护。

37. 发明申请

US20130271094A1 Voltage Regulator Circuit 有权
标题翻译：稳压电路
公开(公告)号：US20130271094A1
公开(公告)日：2013-10-17
申请号：US13808439
申请日：2010-07-05
申请人： Amanda Sun , Zhen Yang , Kaihua Zheng
发明人： Amanda Sun , Zhen Yang , Kaihua Zheng
IPC分类号： G05F1/625
CPC分类号： G05F1/625 , G05F1/575
摘要： A voltage regulator circuit comprises an amplifier (10) having a first input coupled to a first reference voltage node; a power pass element (20) having a control terminal coupled to an output of the amplifier, an input coupled to a power supply input of the voltage regulator circuit, and an output coupled to an output of the voltage regulator circuit; a feedback circuit (30, 31) having an input coupled to the output of the power pass element and an output coupled to a second input of the amplifier; and a compensation module (60) comprising a transistor (61), wherein a gate or base terminal of the transistor is coupled to a second reference voltage node, a drain or collector terminal of the transistor is coupled to the output of the amplifier, and a source or emitter terminal of the transistor is coupled to the power supply input of the voltage regulator circuit. The voltage regulator circuit is capable to increase the power supply rejection ratio of low drop-out voltage regulators.
摘要翻译：电压调节器电路包括具有耦合到第一参考电压节点的第一输入的放大器（10）功率通过元件（20），其具有耦合到所述放大器的输出端的控制端子，耦合到所述电压调节器电路的电源输入端的输入端和耦合到所述电压调节器电路的输出的输出; 反馈电路（30,31），其具有耦合到所述功率通过元件的输出的输入和耦合到所述放大器的第二输入的输出; 以及包括晶体管（61）的补偿模块（60），其中所述晶体管的栅极或基极端子耦合到第二参考电压节点，所述晶体管的漏极或集电极端子耦合到所述放大器的输出，以及晶体管的源极或发射极端子耦合到电压调节器电路的电源输入端。电压调节器电路能够提高低压差稳压器的电源抑制比。

38. 发明申请

US20130090339A1 COMPOUNDS USEFUL AS ANTIVIRAL AGENTS, COMPOSITIONS, AND METHODS OF USE 有权
标题翻译：化合物作为抗病毒剂，组合物和使用方法有用
公开(公告)号：US20130090339A1
公开(公告)日：2013-04-11
申请号：US13703383
申请日：2011-06-17
申请人： Guoxin Wang , Ming Luo , Zhen Yang
发明人： Guoxin Wang , Ming Luo , Zhen Yang
IPC分类号： C07D417/14 , C07D417/06
CPC分类号： C07D417/14 , C07D417/06
摘要： Novel 3-N-cycloalkyl-5-substituted-2-thioxothiazolidin-4-one derivatives that are effective for use in treating viral infections are described. Also described are pharmaceutical compositions comprising the 3-N-cycloalkyl-5-substituted-2-thioxothiazolidin-4-one derivatives and methods for using the compounds or compositions.
摘要翻译：描述了有效用于治疗病毒感染的新的3-N-环烷基-5-取代-2-硫代噻唑烷-4-酮衍生物。还描述了包含3-N-环烷基-5-取代-2-硫代噻唑烷-4-酮衍生物的药物组合物和使用该化合物或组合物的方法。

39. 发明授权

US08354707B2 Electrically programmable device with embedded EEPROM and method for making thereof 有权
标题翻译：具有嵌入式EEPROM的电子可编程器件及其制造方法
公开(公告)号：US08354707B2
公开(公告)日：2013-01-15
申请号：US12833939
申请日：2010-07-09
申请人： Yi-Peng Chan , Sheng-He Huang , Zhen Yang
发明人： Yi-Peng Chan , Sheng-He Huang , Zhen Yang
IPC分类号： H01L27/115
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/11206 , H01L27/115 , H01L27/11519 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： A semiconductor device includes a substrate and a first gate oxide layer overlying a first device region and a second device region in the substrate, a first gate in the first device region, and a second gate and a third gate in the second device region. The device also has a first dielectric layer with a first portion disposed on the first gate, a second portion disposed adjacent a sidewall of the first gate, and a third portion disposed over the third gate. An inter-gate oxide layer is disposed on the first gate and between the first portion and the second portion of the first dielectric layer. A fourth gate overlies the second gate oxide layer, the inter-gate oxide layer, and the first portion and the second portion of the first dielectric layer in the first device region. A fifth gate overlies the third portion of the first dielectric layer which is disposed over the third gate in the second device region.
摘要翻译：半导体器件包括衬底和覆盖衬底中的第一器件区域和第二器件区域的第一栅极氧化物层，第一器件区域中的第一栅极，以及第二器件区域中的第二栅极和第三栅极。该装置还具有第一介电层，第一部分设置在第一栅极上，第二部分邻近第一栅极的侧壁设置，第三部分设置在第三栅极之上。栅极间氧化物层设置在第一栅极上并且在第一介电层的第一部分和第二部分之间。第四栅极覆盖在第一器件区域中的第二栅极氧化物层，栅极间氧化物层以及第一电介质层的第一部分和第二部分。第五栅极覆盖设置在第二器件区域中的第三栅极上的第一电介质层的第三部分。

40. 发明申请

US20100276745A1 ELECTRICALLY PROGRAMMABLE DEVICE WITH EMBEDDED EEPROM AND METHOD FOR MAKING THEREOF 有权
标题翻译：具有嵌入式EEPROM的电可编程器件及其制造方法
公开(公告)号：US20100276745A1
公开(公告)日：2010-11-04
申请号：US12833939
申请日：2010-07-09
申请人： YI-PENG CHAN , Sheng-He Huang , Zhen Yang
发明人： YI-PENG CHAN , Sheng-He Huang , Zhen Yang
IPC分类号： H01L27/115 , H01L29/788
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/11206 , H01L27/115 , H01L27/11519 , H01L27/11524 , H01L29/42324 , H01L29/7883
摘要： A semiconductor device includes a substrate and a first gate oxide layer overlying a first device region and a second device region in the substrate, a first gate in the first device region, and a second gate and a third gate in the second device region. The device also has a first dielectric layer with a first portion disposed on the first gate, a second portion disposed adjacent a sidewall of the first gate, and a third portion disposed over the third gate. An inter-gate oxide layer is disposed on the first gate and between the first portion and the second portion of the first dielectric layer. A fourth gate overlies the second gate oxide layer, the inter-gate oxide layer, and the first portion and the second portion of the first dielectric layer in the first device region. A fifth gate overlies the third portion of the first dielectric layer which is disposed over the third gate in the second device region.
摘要翻译：半导体器件包括衬底和覆盖衬底中的第一器件区域和第二器件区域的第一栅极氧化物层，第一器件区域中的第一栅极，以及第二器件区域中的第二栅极和第三栅极。该装置还具有第一介电层，第一部分设置在第一栅极上，第二部分邻近第一栅极的侧壁设置，第三部分设置在第三栅极之上。栅极间氧化物层设置在第一栅极上并且在第一介电层的第一部分和第二部分之间。第四栅极覆盖在第一器件区域中的第二栅极氧化物层，栅极间氧化物层以及第一电介质层的第一部分和第二部分。第五栅极覆盖设置在第二器件区域中的第三栅极上的第一电介质层的第三部分。

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