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31. 发明授权

US5490034A SOI actuators and microsensors 失效
公开(公告)号：US5490034A
公开(公告)日：1996-02-06
申请号：US27249
申请日：1993-03-05
申请人： Paul M. Zavracky , Richard H. Morrison, Jr.
发明人： Paul M. Zavracky , Richard H. Morrison, Jr.
IPC分类号： G01L9/00 , G01P15/08 , G01P15/12 , H01G7/00
CPC分类号： G01L9/0055 , G01L9/0042 , G01L9/0073 , G01P15/0802 , G01P15/123 , G01P2015/0828 , Y10T29/43
摘要： The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which may incorporate electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

32. 发明授权

US5095401A SOI diaphragm sensor 失效
标题翻译： SOI隔膜传感器
公开(公告)号：US5095401A
公开(公告)日：1992-03-10
申请号：US526166
申请日：1990-05-21
申请人： Paul M. Zavracky , Richard H. Morrison, Jr.
发明人： Paul M. Zavracky , Richard H. Morrison, Jr.
IPC分类号： G01L9/00 , G01P15/08 , G01P15/12
CPC分类号： G01L9/0055 , G01L9/0042 , G01L9/0073 , G01P15/0802 , G01P15/123 , G01P2015/0828
摘要： The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.
摘要翻译：本发明涉及利用绝缘体上硅技术的隔膜压力传感器的制造，其中再结晶硅形成一个隔膜，其结合用于监测压力的电子装置。隔膜可选地由具有必要的机械性能的氮化硅组成，其中重结晶硅层位于其上以提供传感器电子器件。

33. 发明授权

US4940672A Method of making monolithic integrated III-V type laser devices and silicon devices on silicon 失效
标题翻译：在硅上制作单片集成III-V型激光器件和硅器件的方法
公开(公告)号：US4940672A
公开(公告)日：1990-07-10
申请号：US325242
申请日：1989-03-17
申请人： Paul M. Zavracky
发明人： Paul M. Zavracky
IPC分类号： H01L21/20 , H01L21/8252 , H01L21/8254 , H01L21/8258
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02546 , H01L21/0262 , H01L21/8252 , H01L21/8254 , Y10S148/026 , Y10S148/072 , Y10S148/095
摘要： A monolithic integrated structure in which a compound semiconductor (III-V or II-VI material) optoelectronic device (laser) is formed in the shape of a mesa-like structure projecting from an etch pit in an Si substrate. A method for sonically removing cantilevered beams formed on said optoelectronic device, to provide laser end facets, is also described.
摘要翻译：其中化合物半导体（III-V或II-VI材料）光电器件（激光器）形成为从Si衬底中的蚀刻坑突出的台面状结构形状的单片整体结构。还描述了一种用于超声波去除形成在所述光电子器件上的悬臂梁以提供激光端面的方法。

34. 发明授权

US06202495B1 Flow, tactile and orientation sensors using deformable microelectrical mechanical sensors 失效
标题翻译：流动，触觉和方向传感器使用可变形微电机械传感器
公开(公告)号：US06202495B1
公开(公告)日：2001-03-20
申请号：US09207280
申请日：1998-12-08
申请人： Paul M. Zavracky , Nicol E. McGruer
发明人： Paul M. Zavracky , Nicol E. McGruer
IPC分类号： G01L104
CPC分类号： G01P13/0033 , H01H1/0036 , H01H35/02 , H01H35/40
摘要： A microelectric flow sensor including a deformable mechanical element is disclosed. The sensor includes a beam element mounted to a substrate. The beam element is anchored to the substrate on a first end, and deformed to a position normal to the surface of the substrate. An electrode is positioned on the substrate below a portion of the beam, such that when the beam is deflected, an electrical connection is established between the beam and the electrode. An alternate flow sensor includes a sensing beam surrounded by at least two cantilever beams which act as switches. The sensing beam is defined with two mechanically weak points which allow the sensing beam to be mechanically deformed to a new position approximately perpendicular to the cantilever beams and the top surface of the substrate. The substrate also includes electrodes which are positioned underneath the ends of the cantilever beams. With the sensing beam perpendicular to the surface, forces applied to the sensing beam will cause the beam to deflect. Because the cantilever beams are mechanically connected to the sensing beam the cantilever beams are bent towards a substrate upon deflection of the sensing beam. The flow sensor may be configured to function as a tilt sensor by attaching a weight proximate the end of the sensing beam. The flow sensor can be further modified to perform in harsh environments by including a diaphragm surrounding the cantilever beams and electrodes, with the sensing beam extending therethrough.
摘要翻译：公开了一种包括可变形机械元件的微电流流量传感器。传感器包括安装到基板的梁元件。梁元件在第一端锚定到基板，并变形到垂直于基板表面的位置。一个电极位于该光束的一部分下方的衬底上，使得当该光束被偏转时，在该光束与该电极之间建立电连接。一个交替的流量传感器包括由至少两个悬臂梁包围的传感光束，作为开关。感测光束被限定有两个机械弱点，允许感测光束机械地变形到大致垂直于悬臂梁和衬底顶表面的新位置。基板还包括位于悬臂梁的端部下方的电极。随着垂直于表面的感测光束，施加到感测光束的力将导致光束偏转。因为悬臂梁机械地连接到感测梁，所以当感测梁偏转时，悬臂梁朝向衬底弯曲。流量传感器可以被配置为通过在接近感测束的端部附接重物来用作倾斜传感器。流量传感器可以进一步修改，以在恶劣的环境中执行，包括围绕悬臂梁和电极的隔膜，传感梁延伸穿过其中。

35. 发明授权

US5116427A High temperature photovoltaic cell 失效
标题翻译：高温光伏电池
公开(公告)号：US5116427A
公开(公告)日：1992-05-26
申请号：US790141
申请日：1991-11-07
申请人： John C. C. Fan , Paul M. Zavracky
发明人： John C. C. Fan , Paul M. Zavracky
IPC分类号： H01L31/0224 , H01L31/0693
CPC分类号： H01L31/0693 , H01L31/022425 , H01L31/022433 , Y02E10/544
摘要： A photovoltaic device utilizing compound semiconductor materials that are stable when operated at high temperatures. Hostile environments, and in particular, thermally stressful environments such as those generated by use of light concentrating systems, require encapsulation of the device. Sealing of the photo-active junction, the conductive grid, the exposed semiconductor surfaces, and the pads contacting the grid away from the junction area provide such thermal stability. A heterojunction structure can be used along with barrier materials providing a conductive grid in contact with the photo-active surface thereby reducing interdiffusion of that surface with the conductive grid.
摘要翻译：利用化合物半导体材料的光电器件在高温下运行时是稳定的。敌对环境，特别是热应力环境，例如通过使用聚光系统产生的环境，需要封装设备。光电连接点，导电栅格，暴露的半导体表面以及接触栅极远离接合区域的焊盘的密封提供了这种热稳定性。异质结结构可以与提供与光活性表面接触的导电栅格的阻挡材料一起使用，从而减少该表面与导电栅格的相互扩散。

36. 发明授权

US4890895A Optoelectronic interconnections for III-V devices on silicon 失效
标题翻译：用于硅上III-V器件的光电互连
公开(公告)号：US4890895A
公开(公告)日：1990-01-02
申请号：US120021
申请日：1987-11-13
申请人： Paul M. Zavracky , Matthew M. Zavracky , John C. C. Fan , Jack P. Salerno
发明人： Paul M. Zavracky , Matthew M. Zavracky , John C. C. Fan , Jack P. Salerno
IPC分类号： G02B6/42 , H01L33/00
CPC分类号： G02B6/4204 , G02B6/4202 , G02B6/423 , G02B6/4246 , H01L33/0066 , G02B6/4231
摘要： An optical device formed on an Si substrate comprising: a III-V optical transmitter formed on the Si substrate, a silicon device formed in or on, the Si substrate and an alignment groove formed in the substrate for aligning an optical fiber with said transmitter.
摘要翻译：一种形成在Si衬底上的光学器件，包括：形成在Si衬底上的III-V光发射器，形成在Si衬底中或之上的硅器件，以及形成在衬底中用于使光纤与所述发射器对准的对准沟槽。

37. 发明授权

US4674180A Method of making a micromechanical electric shunt 失效
标题翻译：制造微机电分路的方法
公开(公告)号：US4674180A
公开(公告)日：1987-06-23
申请号：US606065
申请日：1984-05-01
申请人： Paul M. Zavracky , Richard H. Morrison, Jr.
发明人： Paul M. Zavracky , Richard H. Morrison, Jr.
IPC分类号： B81B3/00 , G06K19/067 , H01H1/00 , H01H11/00 , H01H11/04
CPC分类号： B81C1/0015 , G06K19/067 , H01H1/0036 , B81B2203/0353 , B81C2201/056 , Y10T29/49105 , Y10T29/49224
摘要： A micromechanical electric shunt is fabricated by micromachining according to recent IC fabrication procedures. A plurality of such shunts is incorporated on a single substrate to form novel process station or post identification or signature encoding apparatus for use on a telecommunications bus or the equivalent. Such identification of signature encoding apparatus may be configured for conventional binary coding. Both frequency and current derivative mode apparatus are disclosed.
摘要翻译：根据最近的IC制造程序通过微加工制造微机电分流器。多个这样的分流器被并入单个基板上以形成用于在电信总线上或其等效物上使用的新的处理站或站点标识或签名编码设备。签名编码装置的这种识别可以被配置用于传统的二进制编码。公开了频率和电流导数模式装置。

38. 发明授权

US06836394B2 Electrostatic discharge protection for eletrostatically actuated microrelays 失效
标题翻译：静电保护
公开(公告)号：US06836394B2
公开(公告)日：2004-12-28
申请号：US10220910
申请日：2003-02-10
申请人： Nicol E. McGruer , Paul M. Zavracky
发明人： Nicol E. McGruer , Paul M. Zavracky
IPC分类号： H02H900
CPC分类号： H01H59/0009 , H01H9/40 , H01L23/60 , H01L2924/0002 , H02H9/046 , H05K9/0067 , H01L2924/00
摘要： Apparatus and methods for protecting devices such as micro-switches (100) and micro-relays from adverse effects of electrostatic discharge (ESD). A protection device is provided that includes a two terminal switch (102, 104) that can be actuated by an ESD event to protect an EDS-sensitive micro-switch or micro-relay from potential malfunction and/or damage. The two terminal switch is configured to close in less time than the micro-switch or micro-relay it is protecting, thereby disipating the energy associated with the ESD event without causing damage to the micro-relays which are provided with increased immunity to the adverse effects of ESD events. The micro-switch includes respective drain/gate terminal pairs at respective ends of the device. The micro-relay includes at least two drain terminals (106) and a gate terminal (102) at respective ends of the device. The micro-switch and micro-relay are configured to be less sensitive to ESD events by using the gate terminal (104) at one end of the device to latch that end of the device down, thereby increasing the gate or drain voltage required to generate a threshold electric field to pull the other end of the device down.
摘要翻译：用于保护微型开关（100）和微型继电器等装置免受静电放电（ESD）影响的装置和方法。提供了一种保护装置，其包括可由ESD事件驱动的两个端子开关（102,104），以保护EDS敏感的微动开关或微型继电器免受潜在的故障和/或损坏。两端子开关被配置为比其保护的微型开关或微型继电器更短的时间闭合，从而使与ESD事件相关的能量脱落而不会对微型继电器造成损害，这些微型继电器具有对不利的增强的抗扰性 ESD事件的影响。微型开关在器件的各个端部包括相应的漏极/栅极端子对。微型继电器在装置的各个端部处包括至少两个漏极端子（106）和栅极端子（102）。微型开关和微型继电器通过在器件的一端使用栅极端子（104）来对ESD事件的敏感度较低，以将器件的端部向下锁存，从而增加产生的栅极或漏极电压阈值电场将器件的另一端向下拉。

39. 发明授权

US6153839A Micromechanical switching devices 有权
标题翻译：微机械开关装置
公开(公告)号：US6153839A
公开(公告)日：2000-11-28
申请号：US177229
申请日：1998-10-22
申请人： Paul M. Zavracky , Nicol E. McGruer
发明人： Paul M. Zavracky , Nicol E. McGruer
IPC分类号： H01H1/20 , H01H9/40 , H01H59/00 , H01H57/00
CPC分类号： H01H59/0009 , H01H1/20 , H01H9/40
摘要： A micromechanical switch or relay in accordance with the invention includes a substrate, a source electrode, a gate electrode, a drain electrode, and various style beams. In one embodiment the beam is relatively long and includes flexures on at least one end, and has a small activation voltage. Additional embodiments include a relay wherein the beam has an insulator and an isolated contactor wherein the interface between the beam and the insulator is more mechanically robust by having the insulator fill recesses in the end of the beam; a switch or relay wherein the drain contacts are collinear with the source contacts so that the strain gradient of the mechanical material does not affect performance of the device; a snap action switch in which the beam acts a leaf spring such that an initial voltage places the beam close to the contact, and a small additional voltage results in a large beam force for closing the switch contact; a switch or relay wherein the beam includes a hinge and is therefore more easily deflectable; and a single pole double throw switch or relay wherein the beam is deflectable in a first direction to provide a first connection and also deflectable in a second direction to provide a second connection. The switches and relays can be ganged together in order to switch high currents, and can be fabricated to have a single large beam, a single large gate contact, a single large source contact, a single large drain contact, or combinations thereof. Additionally, the switches and relays can be used to form logic circuits such as NAND gates, NOR gates, inverters and the like.
摘要翻译：根据本发明的微机械开关或继电器包括基板，源电极，栅电极，漏电极和各种型梁。在一个实施例中，光束相对较长并且包括在至少一个端部上的弯曲，并且具有小的激活电压。附加实施例包括继电器，其中光束具有绝缘体和隔离的接触器，其中通过在光束的末端具有绝缘体填充凹槽，光束和绝缘体之间的界面更机械地坚固; 开关或继电器，其中漏极触点与源极触点共线，使得机械材料的应变梯度不影响器件的性能; 一个快速动作开关，其中光束作用板簧，使得初始电压将光束放置在靠近触点的位置，并且小的附加电压导致用于闭合开关触点的大的光束力; 开关或继电器，其中梁包括铰链并且因此更容易偏转; 以及单杆双掷开关或继电器，其中所述光束可在第一方向上偏转以提供第一连接，并且还可沿第二方向偏转以提供第二连接。开关和继电器可以组合在一起以切换高电流，并且可以制造成具有单个大光束，单个大栅极接触，单个大源极接触，单个大漏极接触或其组合。此外，开关和继电器可以用于形成诸如NAND门，NOR门，反相器等的逻辑电路。

40. 发明授权

US6091125A Micromechanical electronic device 失效
标题翻译：微机电电子设备
公开(公告)号：US6091125A
公开(公告)日：2000-07-18
申请号：US204517
申请日：1998-12-02
申请人： Paul M. Zavracky
发明人： Paul M. Zavracky
IPC分类号： B81B3/00 , H01H59/00 , H01L29/82
CPC分类号： B81B3/0021 , H01H59/0009 , B81B2203/0118 , B81B2203/0361
摘要： The present invention is an active micromechanical electronic device of extremely small physical size, such that the device can take advantage of the quantum-mechanical phenomenon of electron tunneling. The device is produced using Scanning Electron Microscope (SEM) electron beam lithography. In operation, the gap between the tip of the beam and the drain contact is small enough (typically tens of angstroms) that electron tunneling occurs across the gap between the tip of the beam and the drain contact occurs, with the amount of resulting electron flow dependent on the width of the gap between the tip and the drain contact. The device acts as a controlled current source whose output is dependent on the mechanical position of the beam tip with respect to the drain contact. The tip to drain spacing varies due to the electrostatic force presented between the beam and the gate contact.
摘要翻译：本发明是一种极小物理尺寸的有源微机电式电子器件，使器件能够利用电子隧穿的量子力学现象。该装置使用扫描电子显微镜（SEM）电子束光刻制造。在操作中，光束的尖端与漏极接触之间的间隙足够小（通常为几十埃），电子隧穿发生在光束的尖端和漏极接触之间的间隙，产生的电子流量取决于尖端和漏极接触之间的间隙的宽度。该装置用作受控电流源，其输出取决于束尖相对于漏极接触的机械位置。顶端到排水间距由于梁和门接触之间的静电力而变化。

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