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    • 35. 发明专利
    • DE602006008616D1
    • 2009-10-01
    • DE602006008616
    • 2006-06-19
    • PHILIPS INTELLECTUAL PROPERTYKONINKL PHILIPS ELECTRONICS NV
    • DEPPE CARSTENMOENCH HOLGERPOLLMANN-RETSCHMUNTERS TOMVAN DEN BERGH JOHN-JOHN PIETER
    • H05B41/26
    • The invention describes a method of shutting down a high pressure discharge lamp (1) in which a pair of electrodes (2) are disposed in an arc tube (3). This method comprises the steps of reducing the lamp power (PA) to a reduced operation level that enables the maintenance of an arc discharge between the electrodes (2) in a transition state from a lighting state to an extinguished state; driving the lamp (1) at the reduced operation level such that that the lamp (1) cools down; monitoring the lamp voltage (U) during this lamp power reduction process and during driving of the lamp (1) at the reduced operation level with regard to a defined discharge process stability criteria and increasing the lamp power (PA) if the discharge process stability criterion is not satisfied; completely shutting down the lamp power (PA) after sufficient duration to allow the lamp (1) to cool down to a state in which the gas pressure is such that the lamp (1) could be reignited shortly after being extinguished. Moreover the invention describes an appropriate driving unit (7) for driving a high pressure discharge lamp (1) and an image rendering system (40), particularly a projector system, comprising such a driving unit (4).
    • 39. 发明专利
    • AT416497T
    • 2008-12-15
    • AT04744803
    • 2004-08-20
    • KONINKL PHILIPS ELECTRONICS NV
    • MOENCH HOLGERHEUSLER GERO
    • H01S3/063H01S3/094H01S3/0941H01S3/16H01S3/23H01S5/02H01S5/40H04N9/31
    • The invention relates to a semiconductor diode laser used to pump a waveguide and their use as light source. A waveguide laser ( 15 ) according to the present invention producing visible wavelength radiation from IR wavelength radiation comprising: a) at least one semiconductor diode laser or diode laser bar ( 8 ) producing IR wavelength radiation; b) at least one upconversion layer ( 13 a , 13 b , 13 c) having a thickness of at least 1 mum thicker than the thickness of the emitting layer in the semiconductor diode laser that converts the IR wavelength radiation into visible wavelengths by an upconversion process of photon absorption energy transfer followed by emission; c) at least one optical resonator which recirculates the visible wavelength radiation and/or at least one optical resonator which recirculates the IR wavelength radiation; whereby-the laser diode or laser diode bar and the upconversion layer(s) are arranged on the same substrate or each on a separate substrate ( 12, 14 );-the laser diode or laser diode bar and the upconversion layer(s) are adjacent arranged, whereby a gap between the adjacent arranged diode laser bar and the upconversion layer(s) is formed; or-the laser diode or laser diode bar and the upconversion layer(s) are contacting arranged in this order, and whereby the waveguide laser has a beam quality M2 of >=2 and