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31. 发明公开

EP2460190A1 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2460190A1
公开(公告)日：2012-06-06
申请号：EP10732957.5
申请日：2010-07-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ALBRECHT, Tony , KASPRZAK-ZABLOCKA, Anna
IPC分类号： H01L33/00 , H01L33/20 , H01L33/44
CPC分类号： H01L33/20 , H01L33/405 , H01L33/44 , H01L2933/0025
摘要： The invention relates to a light-emitting diode chip comprising a semiconductor body (1) having a first (1A) and a second region (1B); - an active zone (2) within the semiconductor body (1) emitting electromagnetic radiation by means of a radiation output surface (11) at least partially formed by a first main surface (111) of the semiconductor body (1) during operation of the light-emitting diode chip (100); - at least one trench (3) in the semiconductor body (1), wherein parts of the semiconductor body (1) are removed in the region of the trench (3), wherein the at least one trench extends at least to the active zone (2), - the at least one trench completely encloses the first region (1A) in the lateral direction, and the second region (1B) completely encloses the at least one trench (3) and the first region (1A) in the lateral direction.
摘要翻译：发光二极管芯片本发明涉及一种发光二极管芯片，具有第一区域（1A）和第二区域（1B）的半导体本体（1）; - 半导体本体（1）内的有源区（2），其借助于至少部分地由半导体本体（1）的第一主表面（111）形成的辐射输出表面（11）发射电磁辐射，发光二极管芯片（100）; - 在所述半导体本体（1）中的至少一个沟槽（3），其中所述半导体本体（1）的部分在所述沟槽（3）的区域中被去除，其中Δε 所述至少一个沟槽至少延伸至所述有源区（2），所述至少一个沟槽在所述横向方向上完全包围所述第一区域（1A），并且所述至少一个沟槽第二区域（1B）在横向上完全包围至少一个沟槽（3）和第一区域（1A）。

32. 发明授权

EP2457254B1 VERFAHREN ZUR HERSTELLUNG EINES LEUCHTMITTELS UND LEUCHTMITTEL 有权
公开(公告)号：EP2457254B1
公开(公告)日：2020-03-18
申请号：EP10734486.3
申请日：2010-07-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： HAHN, Berthold , MAUTE, Markus , HERRMANN, Siegfried
IPC分类号： H01L25/16 , F21K99/00 , H01L25/075 , H01L33/00 , H01L33/50

33. 发明授权

EP2438627B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2438627B1
公开(公告)日：2020-03-04
申请号：EP10723082.3
申请日：2010-05-21
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl
IPC分类号： H01L33/38 , H01L33/44

34. 发明公开

EP2457254A1 VERFAHREN ZUR HERSTELLUNG EINES LEUCHTMITTELS UND LEUCHTMITTEL 审中-公开
标题翻译：用于生产灯泡和灯具
公开(公告)号：EP2457254A1
公开(公告)日：2012-05-30
申请号：EP10734486.3
申请日：2010-07-16
申请人： OSRAM Opto Semiconductors GmbH
发明人： HAHN, Berthold , MAUTE, Markus , HERRMANN, Siegfried
IPC分类号： H01L25/16 , F21K99/00 , H01L25/075 , H01L33/00 , H01L33/50
摘要： The invention specifies a method for manufacturing a light source, having the following steps: provision of a multiplicity of light-emitting diodes (4), wherein each light emitting-diode has a radiolucent carrier (44) and at least two physically isolated semiconductor bodies (41, 42, 43), each semiconductor body (41, 42, 43) is provided for the purpose of producing electromagnetic radiation, the semiconductor bodies (41, 42, 43) can be actuated in isolation from one another and the semiconductor bodies (41, 42, 43) are arranged on the top (44a) of the radiolucent carrier (44), provision of a chip composite (1) comprising CMOS chips (10), wherein each CMOS chip (10) has at least two connection points (2) on the top (10a) thereof, connection of at least one of the light-emitting diodes (4) to one of the CMOS chips (10), wherein the light-emitting diode (4) is arranged on the top (44a) of the radiolucent carrier (44) on the top (10a) of the CMOS chip (10), and each semiconductor body (41, 42, 43) of the light-emitting diode is connected to a connection point (2) of the CMOS chip (10).

35. 发明授权

EP2460190B1 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2460190B1
公开(公告)日：2017-03-15
申请号：EP10732957.5
申请日：2010-07-13
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ALBRECHT, Tony , KASPRZAK-ZABLOCKA, Anna
IPC分类号： H01L33/20 , H01L33/40 , H01L33/00 , H01L33/44
CPC分类号： H01L33/20 , H01L33/405 , H01L33/44 , H01L2933/0025

36. 发明公开

EP2497125A1 HALBLEITERDIODE UND VERFAHREN ZUM HERSTELLEN EINER HALBLEITERDIODE 失效转让
标题翻译：半导体二极管及其制造方法半导体二极管
公开(公告)号：EP2497125A1
公开(公告)日：2012-09-12
申请号：EP11704207.7
申请日：2011-02-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： ALBRECHT, Tony , MAUTE, Markus , REUFER, Martin , ZULL, Heribert
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/025 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor diode comprises a first semiconductor layer (102) of a first conductivity and a second semiconductor layer of a second conductivity with a dopant. The second semiconductor layer has a vertical electrical via region (106) connected to the first semiconductor layer, in which region the dopant is modified such that the electrical via region (106) has the first conductivity. The invention describes a method for producing said semiconductor diode.

37. 发明公开

EP2438627A2 OPTOELEKTRONISCHER HALBLEITERKÖRPER UND OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
标题翻译：光电子半导体本体和光电子半导体芯片
公开(公告)号：EP2438627A2
公开(公告)日：2012-04-11
申请号：EP10723082.3
申请日：2010-05-21
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl
IPC分类号： H01L33/38
摘要： The present application relates to an optoelectronic semiconductor body (1), comprising a front face (120), which is provided to emit and/or receive electromagnetic radiation, a rear face (110), which is located opposite of the front face (120) and which is provided for application on a support plate (7), and an active semiconductor layer sequence (2), which, in the direction from the rear face (110) to the front face (120), comprises a layer of a first conductivity type (21), an active layer (22), and a layer of a second conductivity type (23) in this order. The present application further relates to a semiconductor chip comprising such a semiconductor body (1).

38. 发明授权

EP2715809B1 OPTOELEKTRONISCHER HALBLEITERCHIP 有权转让
公开(公告)号：EP2715809B1
公开(公告)日：2019-06-05
申请号：EP12724562.9
申请日：2012-04-26
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl , TAEGER, Sebastian , WALTER, Robert , STOCKER, Johannes
IPC分类号： H01L33/42 , H01L33/38 , H01L33/20 , H01L33/40

39. 发明授权

EP2497125B1 HALBLEITERDIODE UND VERFAHREN ZUM HERSTELLEN EINER HALBLEITERDIODE 失效转让
公开(公告)号：EP2497125B1
公开(公告)日：2018-10-10
申请号：EP11704207.7
申请日：2011-02-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： ALBRECHT, Tony , MAUTE, Markus , REUFER, Martin , ZULL, Heribert
IPC分类号： H01L33/38 , H01L33/02
CPC分类号： H01L33/38 , H01L33/025 , H01L2924/0002 , H01L2933/0016 , H01L2924/00

40. 发明授权

EP2543083B1 LEUCHTDIODENCHIP 有权
公开(公告)号：EP2543083B1
公开(公告)日：2017-10-11
申请号：EP11703686.3
申请日：2011-02-15
申请人： OSRAM Opto Semiconductors GmbH
发明人： MAUTE, Markus , ENGL, Karl , RAMMELSBERGER, Stefanie , GMEINWIESER, Nikolaus , EIBL, Johann
IPC分类号： H01L33/40 , H01L33/46 , H01L33/54 , H01L33/60 , H01L33/38
CPC分类号： H01L33/60 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/54 , H01L2924/0002 , H01L2924/00

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