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31. 发明专利

JP2008198752A Vapor deposition system and vapor phase epitaxial growth method 有权
标题翻译：蒸气沉积系统和蒸气相外延生长方法
公开(公告)号：JP2008198752A
公开(公告)日：2008-08-28
申请号：JP2007031512
申请日：2007-02-13
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , ARAI HIDEKI , HIRATA HIRONOBU
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C23C16/45589 , C23C16/45508 , C23C16/45519 , C23C16/4585
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition system and vapor phase epitaxial growth method which raise a growing speed, without making a wafer rotate at a high speed.
SOLUTION: The vapor deposition system is provided with: a chamber 102, a supplying unit 107 for supplying material gas into the chamber 102, a turnable holder 104 for placing the wafer 101 in the chamber 102; a rotatable impeller 110 having a plurality of blades 112 and provided so as to surround the circumference of a holder 104 to discharge material gas from the upper side of the wafer 101; and an exhaust unit 108 for exhausting material gas discharged by the impeller 110, after vapor growth reaction from the chamber 102. According to this constitution, the wafer 101 can be grown, without turning at a high speed whereby the deterioration of the yield of production due to dislocation of the wafer 101 from the holder 104 or the breakage of the same can be prevented, and the growing speed of the vapor growth reaction can be enhanced.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高生长速度的气相沉积系统和气相外延生长方法，而不使晶片高速旋转。气相沉积系统设置有：室102，用于将材料气体供应到室102中的供应单元107，用于将晶片101放置在室102中的可转动保持器104; 具有多个叶片112并设置成围绕保持件104的圆周设置以从晶片101的上侧排出材料气体的可旋转叶轮110; 以及排气单元108，用于在从室102进行气相生长反应之后，排出由叶轮110排出的原料气体。根据该结构，可以生长晶片101，而不会高速转动，从而生产率降低由于可以防止晶片101从保持器104脱位或其断裂，并且可以提高气相生长反应的生长速度。版权所有（C）2008，JPO＆INPIT

32. 发明专利

JP2008108983A Vapor phase growth apparatus and vapor phase growth method 有权
标题翻译：蒸气相生长装置和蒸汽相生长方法
公开(公告)号：JP2008108983A
公开(公告)日：2008-05-08
申请号：JP2006291722
申请日：2006-10-26
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , NAKAZAWA SEIICHI
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus which can suppress deposition of a by-product generated from a process gas on an inner wall of a chamber after a vapor phase growth reaction, and also a vapor phase growth method.
SOLUTION: The vapor phase growth apparatus comprises a heater 113 for heating a low temperature part of a protection cover 102 provided within a chamber 101 as in the vicinity of an exhaust part 105, a temperature detection means 114 for detecting the temperature of the protection cover 102 or the heater 113, and a controller 115 for controlling the output of the heater 113. Cooling of a process gas after a vapor phase growth reaction causes a by-product to be suppressed from being deposited on an inner wall of the chamber 101. With it, a frequency of maintenance of disassembling the chamber 101 and removing the deposition therefrom and so on can be reduced and the process conditions upon the vapor phase growth reaction can be stabilized. Consequently, there can be provided a novel vapor phase growth method and apparatus which can manufacture a high quality of wafer with a high operating efficiency.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种气相生长装置，其可以抑制在气相生长反应之后在工艺气体产生的副产物在室内壁上的沉积，以及气相生长法。气相生长装置包括加热器113，用于加热设置在排气部105附近的室101内的保护盖102的低温部分，温度检测装置114，用于检测温度保护盖102或加热器113，以及用于控制加热器113的输出的控制器115.气相生长反应之后的处理气体的冷却导致副产物被抑制沉积在通过它，可以减少拆卸室101并消除其沉积等的维护频率，并且可以稳定气相生长反应的工艺条件。因此，可以提供一种能够以高工作效率制造高质量晶片的新型气相生长方法和装置。版权所有（C）2008，JPO＆INPIT

33. 发明专利

JP2007288120A Semiconductor manufacturing apparatus and method 审中-公开
标题翻译：半导体制造设备和方法
公开(公告)号：JP2007288120A
公开(公告)日：2007-11-01
申请号：JP2006206005
申请日：2006-07-28
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , ARAI HIDEKI , HIRATA HIRONOBU , KOBAYASHI TAKEHIKO
IPC分类号： H01L21/205 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and method which allow the inflow of gases between a reactor and a rotation driver to be controlled. SOLUTION: This semiconductor manufacturing apparatus is provided with the reactor 2 which allows process gases to be supplied and discharged to form a coating on a processed wafer 1; a pressure measuring means 16 which measures the pressure in the reactor 2; a support 7 which holds the processed wafer 1; a rotation driving means 8 which is located so as to exposes its portion from the reactor 2, is coupled with the support section 7, and rotates the processed wafer 1; and the rotation driver 9 which contains and purges the portion exposed from the reactor 2 of the rotation driving means 8. Further, the apparatus is provided with a pressure measuring means 17 which measures the pressure in the rotation driver 9; a discharge hydrometry means 14 which measures a purge gas discharge flow rate from the rotation driver 9; and a supply flow rate control means 12 which controls a purge gas supply flow rate based on the purge gas discharge flow rate, so that the pressure in the rotation driver 9 is lower than the pressure in the reactor 2 and a difference between them becomes smaller than a set value. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供允许控制反应堆和旋转驱动器之间的气体流入的半导体制造装置和方法。解决方案：该半导体制造装置设置有反应器2，其允许处理气体被供给和排出以在处理的晶片1上形成涂层; 测量反应器2中的压力的压力测量装置16; 保持处理晶片1的支撑体7; 定位成使其从反应器2的部分露出的旋转驱动装置8与支撑部分7联接，并且旋转处理过的晶片1; 以及旋转驱动器9，其包含并清除从旋转驱动装置8的反应器2露出的部分。此外，该装置设置有测量旋转驱动器9中的压力的压力测量装置17; 测量来自旋转驱动器9的净化气体排出流量的排放测量装置14; 以及供给流量控制装置12，其基于净化气体排出流量控制吹扫气体供给流量，使得旋转驱动器9中的压力低于反应器2中的压力，并且它们之间的差异变小比设定值。版权所有（C）2008，JPO＆INPIT

34. 发明专利

JP2007210875A Vapor phase deposition apparatus and vapor phase deposition method 审中-公开
标题翻译：蒸气相沉积装置和蒸气相沉积方法
公开(公告)号：JP2007210875A
公开(公告)日：2007-08-23
申请号：JP2006110533
申请日：2006-04-13
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： FURUYA HIROSHI , MORIYAMA YOSHIKAZU , NAKAZAWA SEIICHI , SUZUKI KUNIHIKO , ARAI HIDEKI , INADA SATOSHI
IPC分类号： C30B25/12 , C23C16/458 , H01L21/205
CPC分类号： C23C16/4585 , C30B25/12
摘要： PROBLEM TO BE SOLVED: To provide a vapor phase deposition apparatus and a vapor phase deposition method for preventing sticking of a silicon wafer to a holder in silicon epitaxial growth.
SOLUTION: An epitaxial deposition apparatus 100 is provided in which a silicon wafer 101 mounted on a holder 110 is housed in a chamber 120, and a passage 122 for supplying a gas for film deposition and a passage 124 for discharging the gas are connected to the chamber 120, wherein the holder 110 has two stage spot-faced holes comprising a first spot-faced hole having a depressed portion and a second spot-faced hole having a depressed portion formed in a bottom part of the first depressed portion.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于防止在硅外延生长中将硅晶片粘附到保持器上的气相沉积设备和气相沉积方法。解决方案：提供一种外延沉积设备100，其中安装在保持器110上的硅晶片101容纳在室120中，并且用于供应用于成膜的气体的通道122和用于排出气体的通道124 连接到室120，其中保持器110具有两个阶段的点对面孔，其包括具有凹陷部分的第一点对面孔和形成在第一凹陷部分的底部中的凹陷部分的第二点对面孔。版权所有（C）2007，JPO＆INPIT

35. 发明专利

JP2006279024A Vapor deposition apparatus and method of preventing gas mixture in the vapor deposition apparatus 有权
标题翻译：蒸气沉积装置及其在蒸气沉积装置中防止气体混合物的方法
公开(公告)号：JP2006279024A
公开(公告)日：2006-10-12
申请号：JP2006041885
申请日：2006-02-20
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , ITO HIDEKI
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C30B29/06 , C30B25/14 , C30B35/005 , Y10T137/7759
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus that has substantially improved security compared with conventional vapor deposition apparatuses that have security problems to be improved, and to provide a method of preventing gas mixture in the apparatus. SOLUTION: The vapor deposition apparatus comprises first flow paths 105a, 105b for supplying a gas necessary for depositing a film on a wafer 102 accommodated in a chamber 103 by a vapor deposition method; valves 107A, 107a, 107B, 107b for controlling the gas flowing through the first flow paths; a second flow path 108 for supplying a cleaning gas into the chamber 103 so as to clean the interior of the chamber 103; and a third flow path 110 for exhausting the gas within the chamber. The valves are composed of two stages in series (107A and 107a, 107B and 107b) with pressure switches 114A, 114B being provided between the valves composed of two stages. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题的方案：提供一种与具有改进的安全问题的常规气相沉积装置相比，具有显着提高的安全性的气相沉积装置，并提供一种防止装置中气体混合的方法。解决方案：蒸镀装置包括：第一流路105a，105b，用于通过气相沉积法提供在容纳在室103中的晶片102上沉积膜所需的气体; 用于控制流经第一流路的气体的阀107A，107a，107B，107b; 用于将清洁气体供应到室103中以便清洁室103的内部的第二流动路径108; 以及用于排出腔室内的气体的第三流路110。这些阀由串联的两级（107A和107a，107B和107b）组成，压力开关114A，114B设置在由两级组成的阀之间。版权所有（C）2007，JPO＆INPIT

36. 发明专利

JP2014116356A Semiconductor manufacturing method and semiconductor manufacturing device 审中-公开
标题翻译：半导体制造方法和半导体制造装置
公开(公告)号：JP2014116356A
公开(公告)日：2014-06-26
申请号：JP2012267378
申请日：2012-12-06
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , SATO YUSUKE
IPC分类号： H01L21/205 , C23C16/458 , C23C16/46 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To uniformly adjust in-plane temperature distribution of a wafer correspondingly to a change in the in-plane temperature distribution of the wafer without increasing the number of zones.SOLUTION: An inner susceptor for exchange is previously housed in an inner susceptor housing part connected with a reaction chamber, and a wafer is introduced into the reaction chamber and placed on the inner susceptor which is carried in beforehand. The inner susceptor and the wafer are placed on an outer susceptor with an opening which is closed by mounting the inner susceptor, provided in the center, and heated from a lower side. Process gas is supplied from an upper side onto the wafer while being rectified, the wafer is rotated, and deposition is performed on the wafer. On the basis of definition information defining an exchange parameter of the inner susceptor and the inner susceptor for exchange beforehand, the inner susceptor for exchange is selected, the deposition on the wafer is temporarily stopped, the inner susceptor is exchanged with the selected inner susceptor for exchange, and then the deposition onto the wafer is resumed.
摘要翻译：要解决的问题：与晶片的面内温度分布的变化相对应地均匀地调整晶片的面内温度分布，而不增加区域数量。解决方案：用于更换的内部感受器预先容纳在内部与反应室连接的基座托架部分和晶片被引入到反应室中并放置在预先承载的内部基座上。内感受器和晶片放置在具有开口的外部基座上，该开口通过安装设置在中心的内部基座而被封闭，并从下侧加热。处理气体在被整流的同时从上侧供给到晶片上，晶片旋转，并且在晶片上进行沉积。基于定义内部基座和内部基座的交换参数的定义信息，用于交换的内部基座被选择，晶片上的沉积被暂时停止，内部基座与所选择的内部基座交换交换，然后恢复到晶片上的沉积。

37. 发明专利

JP2013251558A Semiconductor manufacturing device and semiconductor manufacturing method 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：JP2013251558A
公开(公告)日：2013-12-12
申请号：JP2013147529
申请日：2013-07-16
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/46 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device and a semiconductor manufacturing method capable of heating a wafer evenly and performing even film formation with high productivity.SOLUTION: A heater 17b forming a semiconductor manufacturing device of the present invention includes a plurality of elements 21a, 21b, 21c, 21d. The elements 21a, 21b, 21c, 21d are provided apart from a wafer w, so as to be rotationally symmetrical with respect to an axis passing through the center of the wafer w. An electrode is provided in a central part of each of the elements 21a, 21b, 21c, 21d, and is connected to a common wiring member.
摘要翻译：要解决的问题：提供能够均匀地加热晶片并且以高生产率进行均匀成膜的半导体制造装置和半导体制造方法。解决方案：形成本发明的半导体制造装置的加热器17b包括多个元件 21a，21b，21c，21d。元件21a，21b，21c，21d与晶片w分开设置，以便相对于通过晶片w的中心的轴线旋转对称。电极设置在每个元件21a，21b，21c，21d的中心部分，并且连接到公共配线构件。

38. 发明专利

JP2012077924A Detoxifying device, and semiconductor manufacturing apparatus 审中-公开
标题翻译：脱氧装置和半导体制造装置
公开(公告)号：JP2012077924A
公开(公告)日：2012-04-19
申请号：JP2010220585
申请日：2010-09-30
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ARAI HIDEKI , SUZUKI KUNIHIKO , KOBAYASHI TAKEHIKO
IPC分类号： F23G7/06 , F23N5/10 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a detoxifying device capable of exactly measuring the temperature in a combustion chamber for burning exhaust gas, and to provide a semiconductor manufacturing apparatus in which the detoxifying device is attached to a deposition device.SOLUTION: The detoxifying device 10 which detoxifies exhaust gas 2 includes a combustion chamber 1 for burning the exhaust gas 2 in the chamber, a thermocouple 7 which is disposed in the combustion chamber 1 and measures the temperature in the combustion chamber 1 and a tubular cover 15 arranged on an inner part of the thermocouple 7. A gas supply path 16 for supplying blow gas 17 into the cover 15 is connected to the cover 15. The blow gas 17 supplied into the cover 15 from the gas supply path 16 is configured so as to be blown off from the tip of the thermocouple 7. A semiconductor manufacturing apparatus is configured such that the detoxifying device 10 is attached to the deposition device 31 to detoxify the exhaust gas 2 from the deposition device 31.
摘要翻译：要解决的问题：提供能够精确测量用于燃烧废气的燃烧室中的温度的解毒装置，并提供其中解毒装置附着到沉积装置的半导体制造装置。排气废气2的排毒装置10包括：燃烧室1，用于燃烧室内的废气2;热电偶7，其设置在燃烧室1中，并测量燃烧室1内的温度; 布置在热电偶7的内部的管状盖15.用于将吹气17供应到盖15中的气体供给路径16连接到盖15.从气体供给路径16供应到盖15中的吹气17 被配置为从热电偶7的尖端吹出。半导体制造装置被配置为使得解毒装置10附接到沉积装置31以从沉积装置31对排气2进行解毒。版权所有（C）2012，JPO＆INPIT

39. 发明专利

JP2012054528A Semiconductor manufacturing apparatus 有权
标题翻译：半导体制造设备
公开(公告)号：JP2012054528A
公开(公告)日：2012-03-15
申请号：JP2011061150
申请日：2011-03-18
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： MITANI SHINICHI , TSUMORI TOSHIRO , SUZUKI KUNIHIKO
IPC分类号： H01L21/205 , C23C16/44
CPC分类号： C30B25/12 , C23C14/021 , C23C16/0227 , C23C16/22 , C23C16/32 , C23C16/325 , C23C16/4405 , C23C16/46 , C30B29/36 , C30B33/12
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus that can improve manufacturing yield by removing a film adhered to a susceptor during an SiC epitaxial growth process.SOLUTION: The semiconductor manufacturing apparatus comprises a deposition chamber 2 for forming an SiC epitaxial film on a wafer W loaded on a susceptor S and a cleaning chamber 5 connected to the deposition chamber 2 via a transportation chamber 4 having a transportation robot 17 transporting the susceptor S and removing an SiC film adhered to the susceptor S. The cleaning chamber 5 includes a heater 208 heating the susceptor S at a temperature higher than 400°C and etching gas supply means supplying an etching gas from above the susceptor S to remove the SiC film. The cleaning chamber 5 doubles with a reclaiming chamber for forming an SiC film on a surface of the susceptor S.
摘要翻译：要解决的问题：提供一种半导体制造装置，其可以通过在SiC外延生长工艺期间去除附着到基座的膜来提高制造成品率。解决方案：半导体制造装置包括用于在装载在基座S上的晶片W上形成SiC外延膜的沉积室2和经由运送机器人17的输送室4与沉积室2连接的清洗室5 传送基座S并去除附着在基座S上的SiC膜。清洁室5包括加热器208，加热器208在高于400℃的温度下加热基座S，并将蚀刻气体供应装置从基座S上方提供蚀刻气体去除SiC膜。清洁室5与用于在基座S的表面上形成SiC膜的回收室相加。版权所有：（C）2012，JPO＆INPIT

40. 发明专利

JP2012049316A Film deposition apparatus and film deposition method 审中-公开
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：JP2012049316A
公开(公告)日：2012-03-08
申请号：JP2010189675
申请日：2010-08-26
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI KUNIHIKO , MITANI SHINICHI
IPC分类号： H01L21/205 , C23C16/458
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method which can efficiently accumulate air streams of a reaction gas on a substrate thereby enhancing a growth rate of an epitaxial film.SOLUTION: A film deposition apparatus 100 includes a chamber 1, a supply part 4 disposed above the chamber 1 for supplying a reaction gas 25 into the chamber 1, a hollow cylindrical liner 2 disposed in the chamber 1, a susceptor 7 on which a semiconductor substrate 6 is loaded provided in the liner 2 and a rotation cylinder 23 supporting the susceptor 7. Predetermined films are deposited on the semiconductor substrate 6 while rotating the susceptor 7 by rotation of the rotation cylinder 23. The liner 2 surrounds an upper portion of a periphery of the susceptor 7 and rotates together with the susceptor 7.
摘要翻译：解决的问题：提供一种可以有效地将反应气体的气流积聚在基板上的成膜装置和成膜方法，从而提高外延膜的生长速度。解决方案：成膜装置100包括：腔室1，设置在腔室1上方的用于将反应气体25供应到腔室1中的供应部分4，设置在腔室1中的中空圆柱形衬垫2，其中装载在衬套2中的半导体衬底6和支撑基座7的旋转圆筒23.预定膜沉积在半导体衬底6上，同时通过旋转圆筒23的旋转使基座7旋转。衬套2围绕上部基座7的周边部分与基座7一起旋转。版权所有（C）2012，JPO＆INPIT

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