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31. 发明授权

US06815357B2 Process and apparatus for manufacturing a semiconductor device 失效
标题翻译：用于制造半导体器件的工艺和设备
公开(公告)号：US06815357B2
公开(公告)日：2004-11-09
申请号：US10299838
申请日：2002-11-20
申请人： Yoshio Homma , Noriyuki Sakuma , Hiroshi Nakano , Takeyuki Itabashi , Haruo Akahoshi
发明人： Yoshio Homma , Noriyuki Sakuma , Hiroshi Nakano , Takeyuki Itabashi , Haruo Akahoshi
IPC分类号： H01L21311
CPC分类号： C25D7/12 , C25D5/02 , C25D5/22 , C25D17/001 , H01L21/288 , H01L21/76849 , H01L21/76883
摘要： A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.
摘要翻译：一种用于在布线基板的互连件的表面上选择性地形成金属阻挡层的方法，包括以下步骤：研磨基板，同时将具有溶解在其中的金属的电镀溶液同时进料到基板上。研磨步骤包括使基底抵靠研磨表面，并且在基底与研磨表面接触的同时使研磨表面和基底之间发生相对的线性和/或旋转运动。抑制布线基板以外的配线层的部分上的金属阻挡层的生长，由此形成的金属阻挡层更薄，显示出均匀性提高，防止Cu扩散的优异性。

32. 发明授权

US06680541B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06680541B2
公开(公告)日：2004-01-20
申请号：US10050859
申请日：2002-01-18
申请人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
发明人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
IPC分类号： H01L23522
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
摘要翻译：至少含有硅原子，氧原子和碳原子的氧原子与硅原子的数量比为1.5以上，碳原子数与硅原子数之比为1〜2的金属间绝缘膜，具有膜厚收缩率在14％以下的氧化时，介电常数非常低，抗蚀剂蚀刻的选择性高，可以在半导体器件中不使用氧化硅保护膜的情况下使用。

33. 发明授权

US06358838B2 Semiconductor device and process for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06358838B2
公开(公告)日：2002-03-19
申请号：US09760777
申请日：2001-01-17
申请人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
发明人： Takeshi Furusawa , Daisuke Ryuzaki , Noriyuki Sakuma , Shuntaro Machida , Kenji Hinode , Ryou Yoneyama
IPC分类号： H01L21311
CPC分类号： H01L21/76808 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/31633 , H01L21/76801 , H01L21/76802 , H01L21/76807 , H01L23/5222 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An intermetal insulating film containing at least silicon atoms, oxygen atoms and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a film thickness shrinkage at a time of oxidation of 14% or less is very low in dielectric constant, high in selectivity against resist etching and can be used without using a silicon oxide protective film in a semiconductor device.
摘要翻译：至少含有硅原子，氧原子和碳原子的氧原子与硅原子的数量比为1.5以上，碳原子数与硅原子数之比为1〜2的金属间绝缘膜，具有膜厚收缩率在14％以下的氧化时，介电常数非常低，抗蚀剂蚀刻的选择性高，可以在半导体器件中不使用氧化硅保护膜的情况下使用。

34. 发明授权

US08429964B2 Thermal fluid flow sensor having stacked insulating films above and below heater and temperature-measuring resistive elements 有权
标题翻译：热流体流量传感器在加热器和温度测量电阻元件之上和之下具有堆叠的绝缘膜
公开(公告)号：US08429964B2
公开(公告)日：2013-04-30
申请号：US12633142
申请日：2009-12-08
申请人： Noriyuki Sakuma
发明人： Noriyuki Sakuma
IPC分类号： G01F1/68
CPC分类号： B81B3/0072 , B81B2201/0292 , B81B2203/0127 , G01F1/6845 , G01F1/692 , G01F1/699 , G01F5/00 , Y10T29/49083
摘要： A thermal fluid flow sensor having a diaphragm structure body configured by an insulating film formed by stacking a film having compressive stress and a film having tensile stress on the top and bottom of a temperature-measuring resistive element and a heater resistive element which are processed by microprocessing is provided. The insulating film at a lower layer of the heater resistive element, a temperature-measuring resistive element for heater resistive element, upstream temperature-measuring resistive elements, and downstream temperature-measuring resistive elements, has films having compressive stress (a first insulating film, a third insulating film, and a fifth insulating film) and films having tensile stress (a second insulating film and a fourth insulating film) being alternately arranged, and two layers or more of the films having tensile stress are arranged.
摘要翻译：一种热流体流量传感器，具有膜结构体，该隔膜结构体由绝缘膜构成，该绝缘膜通过在温度测量电阻元件和加热器电阻元件的顶部和底部堆叠具有压应力的膜和具有拉伸应力的膜而形成，提供微处理。加热电阻元件下层的绝缘膜，加热电阻元件的温度测量电阻元件，上游测温电阻元件和下游温度测量电阻元件具有压应力的膜（第一绝缘膜，第三绝缘膜和第五绝缘膜）和具有拉伸应力的膜（第二绝缘膜和第四绝缘膜）交替布置，并且布置有两层或更多层的具有拉伸应力的膜。

35. 发明授权

US07816702B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07816702B2
公开(公告)日：2010-10-19
申请号：US12245077
申请日：2008-10-03
申请人： Shinichi Saito , Masahiro Aoki , Hiroyuki Uchiyama , Hideo Arimoto , Noriyuki Sakuma , Jiro Yamamoto
发明人： Shinichi Saito , Masahiro Aoki , Hiroyuki Uchiyama , Hideo Arimoto , Noriyuki Sakuma , Jiro Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/1237 , H01S5/125 , H01S5/18341 , H01S5/3004 , H01S5/3427 , H01S2301/176 , H01S2302/00
摘要： There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
摘要翻译：存在具有诸如硅等离子体的硅组合半导体的硅激光器装置，其等同于由硅制成的衬底上作为基本构成元件的硅等，通过使用能够容易地形成硅激光器件的方法，通用硅工艺及其制造方法。硅激光器件是一种超薄硅激光器，其包括注入电子的第一电极单元，注入空穴的第二电极单元，与第一电极单元和第二电极单元电连接的发光单元，其中发光单元由单晶硅，并且具有与第一表面相对的第一表面（顶表面）和第二表面（底表面），通过设置在发光单元附近的由第一电介质制成的波导第一表面和第二表面的方向作为表面（100），并且在垂直于第一和第二表面的方向上减薄发光单元的厚度，以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。

36. 发明申请

US20090188314A1 Flow sensor with metal film resistor 有权
公开(公告)号：US20090188314A1
公开(公告)日：2009-07-30
申请号：US12320475
申请日：2009-01-27
申请人： Noriyuki Sakuma
发明人： Noriyuki Sakuma
IPC分类号： G01F1/692
CPC分类号： G01F1/6845 , G01F1/688
摘要： There is a need for providing a flow sensor with metal film resistor that improves detection sensitivity using a metal film for a resistance heat detector and a resistance temperature detector. The flow sensor with metal film resistor is structured to form a resistance heat detector, a resistance temperature detector for resistance heat detector for measuring temperature of the resistance heat detector, an upstream resistance temperature detector, a downstream resistance temperature detector, and an air resistance temperature detector on a silicon substrate. Plural floating-island insulators are provided for the resistance heat detector and within wiring thereof.

37. 发明授权

US07054956B2 Multi-interval data acquisition apparatus 有权
标题翻译：多间隔数据采集装置
公开(公告)号：US07054956B2
公开(公告)日：2006-05-30
申请号：US10644861
申请日：2003-08-21
申请人： Noriyuki Sakuma
发明人： Noriyuki Sakuma
IPC分类号： G06F3/00
CPC分类号： G01D9/30
摘要： The objective is to provide a data acquisition apparatus enabling simultaneous data acquisition using multiple measurement intervals in a data acquisition apparatus comprised of multiple input modules.It is characterized, as a data acquisition apparatus comprising multiple input modules having different measurement intervals, in that a control means is provided for simultaneously driving each input module at a specified measurement interval.This makes it possible to simultaneously acquire data using multiple measurement intervals which are optimal for each input module in a data acquisition apparatus comprised of multiple input modules.
摘要翻译：目的是提供一种在由多个输入模块组成的数据采集装置中使用多个测量间隔同时进行数据采集的数据采集装置。其特征在于，作为包括具有不同测量间隔的多个输入模块的数据采集装置，其特征在于，提供控制装置，用于以指定的测量间隔同时驱动每个输入模块。这使得可以在由多个输入模块组成的数据采集装置中同时采用对于每个输入模块最佳的多个测量间隔来采集数据。

38. 发明授权

US06899603B2 Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US06899603B2
公开(公告)日：2005-05-31
申请号：US10768672
申请日：2004-02-02
申请人： Yoshio Homma , Seiichi Kondo , Noriyuki Sakuma , Youhei Yamada , Takeshi Kimura , Hiroki Nezu
发明人： Yoshio Homma , Seiichi Kondo , Noriyuki Sakuma , Youhei Yamada , Takeshi Kimura , Hiroki Nezu
IPC分类号： B24B37/005 , B24B37/04 , B24B37/30 , B24B37/32 , H01L21/304 , B24B1/00
CPC分类号： B24B37/30
摘要： In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.
摘要翻译：在具有带有流体按压机构的盖体的抛光装置中，在抛光期间，通过减小保持器和膜之间的粘附力来防止在保持器和在研磨台板的旋转下游产生的膜之间的粘着部分的振动和迁移，小于通过盖体旋转进行晶片抛光所需的力。

39. 发明授权

US06774041B1 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device 失效
公开(公告)号：US06774041B1
公开(公告)日：2004-08-10
申请号：US09637570
申请日：2000-08-14
申请人： Seiichi Kondo , Masaaki Fujimori , Noriyuki Sakuma , Yoshio Homma
发明人： Seiichi Kondo , Masaaki Fujimori , Noriyuki Sakuma , Yoshio Homma
IPC分类号： H01L21302
CPC分类号： C23F1/18 , C09G1/04 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

40. 发明授权

US06562719B2 Methods of polishing, interconnect-fabrication, and producing semiconductor devices 失效
公开(公告)号：US06562719B2
公开(公告)日：2003-05-13
申请号：US09828919
申请日：2001-04-10
申请人： Seiichi Kondo , Noriyuki Sakuma , Yoshio Homma
发明人： Seiichi Kondo , Noriyuki Sakuma , Yoshio Homma
IPC分类号： H01L21302
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , H01L21/7684
摘要： The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

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