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31. 发明授权

US5942376A Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效
标题翻译：稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译：光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。

32. 发明授权

US06987197B2 Organozirconium composite and method of synthesizing the same, raw material solution containing the same, and method of forming lead zirconate titanate thin film 失效
标题翻译：有机锆复合物及其合成方法，含有该组合物的原料溶液以及钛酸锆酸铅薄膜的制备方法
公开(公告)号：US06987197B2
公开(公告)日：2006-01-17
申请号：US10634767
申请日：2003-08-06
申请人： Shingo Okamura , Hideyuki Hirakoso , Nobuyuki Soyama , Katsumi Ogi , Yoshinori Takayama
发明人： Shingo Okamura , Hideyuki Hirakoso , Nobuyuki Soyama , Katsumi Ogi , Yoshinori Takayama
IPC分类号： C23C16/40 , C07F7/00
CPC分类号： C07F7/003
摘要： The organozirconium composite of the present invention has a decomposition temperature which is near the respective decomposition temperatures of an organolead compound and an organotitanium compound. The raw material solution can precisely control the composition of a PZT thin film over a broad temperature range. The raw material solution is less likely to react an organolead compound even when mixed with the organolead compound. The present invention provides a raw material solution which is less likely to cause vapor phase cracking. The organozirconium composite comprises one, or at least two kinds of zirconium chelate complexes containing, as a ligand, both of a first β diketone and a second β diketone having a structure different from that of the first β diketone, wherein, when at least two kinds of zirconium chelate complexes are contained, the coordination numbers of the first β diketone and the second β diketone that coordinate to at least two kinds of zirconium chelate complexes vary depending on the respective zirconium chelate complexes.
摘要翻译：本发明的有机锆复合物的分解温度接近有机锡化合物和有机钛化合物的分解温度。原料溶液可以在宽温度范围内精确控制PZT薄膜的组成。即使与有机锡化合物混合，原料溶液也不太可能与有机基化合物反应。本发明提供一种不易引起气相裂化的原料溶液。所述有机锆复合物包含一种或至少两种含有作为配体的锆螯合络合物，所述锆螯合配合物具有与第一β二酮的结构不同的第一β二酮和第二β二酮，其中当至少两个含有锆螯合物的种类，与至少两种锆螯合物配位的第一个β二酮和第二个β二酮的配位数根据各自的锆螯合物的不同而变化。

33. 发明授权

US6022669A Method of fabricating an integrated circuit using self-patterned thin films 失效
标题翻译：使用自图案薄膜制造集成电路的方法
公开(公告)号：US6022669A
公开(公告)日：2000-02-08
申请号：US687721
申请日：1996-07-26
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , G03F7/00 , G03C1/73
CPC分类号： H01L21/31691 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
摘要翻译：将第一感光性液体溶液施加到基板上，通过暴露于辐射和显影进行图案化，并退火以形成期望的固体材料，例如并入集成电路的部件中的SrBi2Ta2O9。制造工艺被设计成保护自来自常规IC处理的图案化固体材料并且保护常规材料（例如硅）从自身图案化固体材料中的元件。在一个实施例中，在SrBi 2 Ta 2 O 9上形成氧化铋层，氧化铋蚀刻氧化铋。氧化铋保护SrBi2Ta2O9免受腐蚀，并被蚀刻剂还原成铋。任何剩余的氧化铋和大部分铋在退火过程中蒸发，剩余的铋掺入到SrBi2Ta2O9中。

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