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    • 31. 发明授权
    • Semiconductor device with silicide contact structure and fabrication method thereof
    • 具有硅化物接触结构的半导体器件及其制造方法
    • US06346465B1
    • 2002-02-12
    • US09598502
    • 2000-06-22
    • Yoshinao MiuraKoichi Ishida
    • Yoshinao MiuraKoichi Ishida
    • H01L2122
    • H01L21/28518H01L21/28537H01L21/76814H01L21/76831H01L21/76877
    • A fabrication method of a semiconductor device that realizes a simplified contact formation process is provided. After a single-crystal silicon substrate having a main surface is provided, a dielectric film having a contact hole uncovering the main surface of the substrate is formed on the main surface of the substrate. Next, a silicon nitride film is formed on the main surface of the substrate in the contact hole of the dielectric film. Then, a metal film is formed on the dielectric film to be contacted with the silicon nitride film in the contact hole of the dielectric film. The metal film has a property that an atom of the metal film serves as diffusion species in a solid-phase silicidation reaction. The metal film, the silicon nitride film, the dielectric film, and the substrate are heat-treated to thereby form a metal silicide film due to a solid-phase silicidation reaction between the metal film and the substrate. The metal silicide film thus formed is contacted with the main surface of the substrate in the contact hole of the dielectric film. The metal silicide film has a single-crystal structure. Finally, an electrically conductive film is formed on the dielectric film to be electrically contacted with the main surface of the substrate through the metal silicide film in the contact hole of the dielectric film.
    • 提供实现简化的接触形成处理的半导体器件的制造方法。 在具有主表面的单晶硅衬底之后,在衬底的主表面上形成具有露出衬底主表面的接触孔的电介质膜。 接下来,在电介质膜的接触孔中的基板的主表面上形成氮化硅膜。 然后,在电介质膜上形成与介电膜的接触孔中的氮化硅膜接触的金属膜。 金属膜具有在固相硅化反应中金属膜的原子作为扩散物质的性质。 金属膜,氮化硅膜,电介质膜和基板由于金属膜和基板之间的固相硅化反应而被热处理,从而形成金属硅化物膜。 如此形成的金属硅化物膜与电介质膜的接触孔中的基板的主表面接触。 金属硅化物膜具有单晶结构。 最后,在电介质膜上形成导电膜,通过电介质膜的接触孔中的金属硅化物膜与基板的主表面电接触。
    • 36. 发明授权
    • Heat-sensitive record material
    • 感热记录材料
    • US5091359A
    • 1992-02-25
    • US475172
    • 1990-02-05
    • Koichi IshidaYukio Takayama
    • Koichi IshidaYukio Takayama
    • B41M5/333
    • B41M5/333
    • The heat-sensitive record material, in which color images are produced by a color-forming reaction between a colorless or pale colored basic chromogenic material and a color developer, comprises a novolac-type epoxy resin or a diphenyl sulfone derivative represented by the formula (III) in the color forming reaction system.In the former case, it is preferable to use a novolac-type epoxy resin represented by the formula (I) together witha a compound represented by the formula (II) and, in the latter case, the desired effects can be obtained by using 3-dibutylamino-6-methyl-7-phenylaminofluoran as the basic chromogenic material. ##STR1## wherein X is halogen or alkyl having C.sub.1 to C.sub.5, and a is an integer of 0 to 4; and n is an integer of 0 to 20, each of R.sub.1 .about.R.sub.6 is hydrogen, halogen, C.sub.1-5 alkyl or C.sub.1-5 alkoxyl, R.sub.7 is ##STR2## R.sub.10 is hydrogen or alkyl; each of p and q is 0 or an integer of 1 to 5; each of r and s is an integer of 1 to 5; each R.sub.8 and R.sub.9 is halogen, alkyl or alkoxyl; l is 0 or 1; u is 0 or an integer of 1 to 5; and t is 0 or an integer of 1 to 4.