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31. 发明申请

US20070279809A1 Magneto-resistance effect element, thin-film magnetic head, and method for manufacturing magneto-resistance effect element 有权
标题翻译：磁阻效应元件，薄膜磁头和制造磁阻效应元件的方法
公开(公告)号：US20070279809A1
公开(公告)日：2007-12-06
申请号：US11783098
申请日：2007-04-05
申请人： Daisuke Myiauchi , Kazuki Sato , Takayasu Kanaya , Takahiko Machita
发明人： Daisuke Myiauchi , Kazuki Sato , Takayasu Kanaya , Takahiko Machita
IPC分类号： G11B17/00
CPC分类号： G11B5/3163 , G11B5/398 , G11B5/59683 , H01L43/08 , H01L43/12
摘要： A magneto-resistance effect element comprises a stacked body which comprises a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction that varies according to an external magnetic field, and a nonmagnetic spacer layer which is interposed between the pinned layer and the free layer. The stacked body having a constricted shape in which at least one part of the spacer layer is constricted when viewed from at least one direction perpendicular to a stacked direction of the stacked body.
摘要翻译：磁阻效应元件包括层叠体，该层叠体包括具有固定的磁化方向的被钉扎层，具有根据外部磁场变化的磁化方向的自由层，以及插入在被钉扎层和被覆层之间的非磁性间隔层自由层。所述层叠体具有收缩形状，其中当从垂直于所述层叠体的堆叠方向的至少一个方向观察时，所述间隔层的至少一部分收缩。

32. 发明申请

US20060203379A1 Perpendicular magnetic recording element, thin film magnetic head, magnetic head device, and magnetic recording/reproducing apparatus 有权
标题翻译：垂直磁记录元件，薄膜磁头，磁头装置和磁记录/重放装置
公开(公告)号：US20060203379A1
公开(公告)日：2006-09-14
申请号：US11337659
申请日：2006-01-24
申请人： Kei Hirata , Takahiko Machita , Kiyoshi Noguchi
发明人： Kei Hirata , Takahiko Machita , Kiyoshi Noguchi
IPC分类号： G11B5/127
CPC分类号： G11B5/1278
摘要： A perpendicular magnetic recording element includes a recording magnetic pole film and a write shield film. The recording magnetic pole film has a yoke portion and a main magnetic pole for perpendicular recording. The main magnetic pole projects from a front end of the yoke portion to have an end on a medium-facing surface. The write shield film faces the recording magnetic pole film and has a height equal to or smaller than that of the recording magnetic pole film, as measured rearward from the medium-facing surface.
摘要翻译：垂直磁记录元件包括记录磁极膜和写保护膜。记录磁极膜具有用于垂直记录的磁轭部分和主磁极。主磁极从磁轭部的前端突出，以在中间面的表面上具有一端。写入屏蔽膜面向记录磁极膜，并且具有与记录磁极膜相同或更小的高度，从中间面向后测量。

33. 发明申请

US20050219766A1 Thin-film magnetic head, head gimbal assembly and hard disk drive 失效
标题翻译：薄膜磁头，头万向架组件和硬盘驱动器
公开(公告)号：US20050219766A1
公开(公告)日：2005-10-06
申请号：US11078580
申请日：2005-03-14
申请人： Takahiko Machita , Koji Shimazawa
发明人： Takahiko Machita , Koji Shimazawa
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/399 , G11B2005/3996
摘要： An MR element incorporates: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer changes in response to an external magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the pinned layer is fixed to the direction orthogonal to the air bearing surface. The MR element does not include any layer provided for fixing the direction of magnetization in the pinned layer. The pinned layer incorporates a ferromagnetic layer made of a ferromagnetic material having a positive magnetostriction constant. A bottom shield gap film and a top shield gap film disposed adjacent to the MR element each have a compressive stress of 600 MPa or greater.
摘要翻译： MR元件包括：具有朝向相反方向的两个表面的非磁性导电层; 邻近所述非磁性导电层的一个表面设置的自由层，其中所述自由层中的磁化方向响应于外部磁场而改变; 以及与非磁性导电层的另一个表面相邻设置的被钉扎层，其中被钉扎层中的磁化方向固定在与空气支承表面正交的方向上。 MR元件不包括用于固定钉扎层中的磁化方向的任何层。钉扎层包含由具有正磁致伸缩常数的铁磁材料制成的铁磁层。邻近MR元件设置的底部屏蔽间隙膜和顶部屏蔽间隙膜各自具有600MPa或更大的压缩应力。

34. 发明授权

US08310791B2 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US08310791B2
公开(公告)日：2012-11-13
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

35. 发明授权

US08144437B2 Magnetoresistive element and thin film magnetic head 有权
标题翻译：磁阻元件和薄膜磁头
公开(公告)号：US08144437B2
公开(公告)日：2012-03-27
申请号：US12824725
申请日：2010-06-28
申请人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita , Tetsuya Roppongi
发明人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita , Tetsuya Roppongi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in respective magnetization directions thereof, non-magnetic metal layers formed to abut both ends of the MR part in a width direction and separated from both ends of the MR part by respective insulation layers, each of the non-magnetic metal layers being in a two-layer structure configured with a first non-magnetic metal layer positioned at a lower side as a lower layer and a second non-metal layer positioned at an upper side as an upper layer are configured, and relationship R2
摘要翻译：在DFL结构中的MR部分的后部形成有影响第一和第二铁磁层在其各自的磁化方向上的基本正交功能的正交偏置功能部件，形成为邻接MR部件的两端的非磁性金属层宽度方向并且通过相应的绝缘层从MR部分的两端分离开，每个非磁性金属层是由位于下侧的第一非磁性金属层构成的两层结构，作为下层并且配置位于上侧的第二非金属层作为上层，并且满足关系R2

36. 发明授权

US08087157B2 Process to manufacture magnetic tunnel junction read head 有权
标题翻译：制造磁性隧道结读头的工艺
公开(公告)号：US08087157B2
公开(公告)日：2012-01-03
申请号：US11975266
申请日：2007-10-18
申请人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
发明人： Stuart Kao , Chunping Luo , Chaopeng Chen , Takahiko Machita , Daisuke Miyauchi , Jeiwei Chang
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B2005/3996 , H01F10/3263 , H01F41/308 , Y10T29/49021 , Y10T29/49037 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Using a beam of xenon ions together with a suitable mask, a MTJ stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the longitudinal bias and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
摘要翻译：使用一束氙离子与合适的掩模，MTJ堆叠被离子研磨直到其不超过约0.1微米厚的一部分被去除，使得具有包括垂直部分的侧壁的基座包括全部自由层已形成。然后以通常的方式形成纵向偏置和导电引线层。使用氙气作为溅射气体，可以更精确地控制铣削终止点。

37. 发明授权

US07944650B2 Magnetoresistive element including layered film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括层间膜接触间隔层的周边
公开(公告)号：US07944650B2
公开(公告)日：2011-05-17
申请号：US11898335
申请日：2007-09-11
申请人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.
摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。磁阻元件还包括接触间隔层的周边的层状膜。间隔层包括使用氧化物半导体作为材料形成的半导体层。层叠膜包括依次堆叠的第一层，第二层和第三层。第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。第三层是绝缘层。

38. 发明授权

US07916429B2 Magnetic field detecting element having thin stack with a plurality of free layers and thick bias magnetic layer 有权
标题翻译：磁场检测元件具有薄堆叠，具有多个自由层和厚偏磁层
公开(公告)号：US07916429B2
公开(公告)日：2011-03-29
申请号：US11830122
申请日：2007-07-30
申请人： Daisuke Miyauchi , Takahiko Machita
发明人： Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/12
摘要： A magnetic field detecting element comprising: a stack including an upper and magnetic layer, a lower magnetic layer, and a non-magnetic intermediate layer sandwiched therebetween, an upper and lower shield electrode layer provided in a manner that they sandwich said stack therebetween in a direction of stacking of the stack, wherein the upper and lower shield electrode layer supply sense current in the direction of stacking and magnetically shield the stack; a bias magnetic layer provided on a surface of the stack, the surface being opposite to an air bearing surface of said stack, and insulating films provided on both sides of the stack with regard to a track width direction thereof. The bias magnetic layer has a larger thickness than the stack, and the upper shield electrode layer and/or said lower shield electrode layer includes an auxiliary shield layer which fills a stepped portion formed by the stack and bias magnetic layer.
摘要翻译：一种磁场检测元件，包括：包括上层和下层磁性层以及夹在其间的非磁性中间层的层叠体，上下屏蔽电极层以将它们夹在其间的方式设置，堆叠的堆叠方向，其中上下屏蔽电极层沿着堆叠方向提供感测电流并磁屏蔽堆叠; 设置在堆叠表面上的偏置磁性层，该表面与所述叠层的空气轴承表面相对，以及设置在堆叠的两侧的绝缘膜相对于其轨道宽度方向。偏磁层的厚度大于叠层，上屏蔽电极层和/或所述下屏蔽电极层包括辅助屏蔽层，其填充由叠层和偏磁层形成的阶梯部分。

39. 发明授权

US07869165B2 Magnetic field detecting element having stack with a plurality of free layers and side shield layers 有权
标题翻译：具有堆叠的多个自由层和侧面屏蔽层的磁场检测元件
公开(公告)号：US07869165B2
公开(公告)日：2011-01-11
申请号：US11830114
申请日：2007-07-30
申请人： Daisuke Miyauchi , Takahiko Machita
发明人： Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： G11B5/3903 , B82Y25/00 , G01R33/093 , G11B5/3912 , H01L43/08
摘要： A magnetic field detecting element comprising: a stack including an upper magnetic layer, a lower magnetic layer and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization directions of said upper magnetic layer and said lower magnetic layer change in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which are provided in a manner that they sandwich said stack therebetween in a direction of stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack, the surface being opposite to an air bearing surface of said stack, wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and to said lower magnetic layer in a direction perpendicular to the air bearing surface; and a pair of side shield layers which are provided on both sides of said stack with regard to a track width direction.
摘要翻译：一种磁场检测元件，包括：包括上磁性层，下磁性层和夹在所述上磁性层和所述下磁性层之间的非磁性中间层的叠层，其中所述上磁层和所述下磁层的磁化方向根据外部磁场的层变化; 上屏蔽电极层和下屏蔽电极层，它们以堆叠方式将堆叠夹在其间的方式设置，其中所述上屏蔽电极层和所述下屏蔽电极层沿所述堆叠方向提供感测电流，堆叠并磁屏蔽所述堆叠; 偏置磁性层，其设置在所述堆叠的表面上，所述表面与所述堆叠的空气轴承表面相对，其中所述偏磁层将偏置磁场施加到所述上磁层和所述下磁层中方向垂直于空气轴承表面; 以及一对侧屏蔽层，其相对于轨道宽度方向设置在所述叠层的两侧。

40. 发明申请

US20100232074A1 Magnetoresistive effect element and magnetic disk device 有权
标题翻译：磁阻效应元件和磁盘装置
公开(公告)号：US20100232074A1
公开(公告)日：2010-09-16
申请号：US12382309
申请日：2009-03-13
申请人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
发明人： Takahiko Machita , Tomohito Mizuno , Koji Shimazawa , Tsutomu Chou , Daisuke Miyauchi , Yoshihiro Tsuchiya , Shinji Hara , Toshiyuki Ayukawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.
摘要翻译：磁阻效应元件的结构是，插入在上屏蔽和下屏蔽之间的反铁磁层被消除，反铁磁层位于所谓的屏蔽层中。因此，实现了解决引脚反转问题并且允许更窄的轨道和更窄的读取间隙。

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