专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08110787B1 Image sensor with a reflective waveguide 有权
标题翻译：具有反射波导的图像传感器
公开(公告)号：US08110787B1
公开(公告)日：2012-02-07
申请号：US11509480
申请日：2006-08-23
申请人： Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
发明人： Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
IPC分类号： H01L27/00
CPC分类号： H01L27/14685 , H01L27/14625 , H01L27/14687
摘要： An image sensor having shield structures and methods of forming the same are provided. Generally, the image sensor includes: (i) substrate having at least one photosensitive element formed therein; (ii) a dielectric layer overlying the substrate and the photosensitive element; and (iii) an annular reflective waveguide disposed in the dielectric layer above the photosensitive element to reduce cross-talk between adjacent elements of the sensor while increasing sensitivity of the sensor. In certain embodiments, the sensor further includes a photoshield disposed in the dielectric above the photosensitive element and about the waveguide to further reduce the possibility of cross-talk. Other embodiments are also disclosed.
摘要翻译：提供具有屏蔽结构的图像传感器及其形成方法。通常，图像传感器包括：（i）具有形成在其中的至少一个感光元件的基板; （ii）覆盖所述基底和所述感光元件的电介质层; 和（iii）设置在光敏元件上方的电介质层中的环形反射波导，以减小传感器的相邻元件之间的串扰，同时增加传感器的灵敏度。在某些实施例中，传感器还包括设置在感光元件上方的电介质中以及围绕波导的光电二极管，以进一步降低串扰的可能性。还公开了其他实施例。

32. 发明授权

US07294588B2 In-situ-etch-assisted HDP deposition 失效
标题翻译：原位蚀刻辅助HDP沉积
公开(公告)号：US07294588B2
公开(公告)日：2007-11-13
申请号：US11388657
申请日：2006-03-24
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： H01L21/31 , H01I21/469
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
摘要翻译：提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

33. 发明授权

US07208413B2 Formation of boride barrier layers using chemisorption techniques 有权
标题翻译：使用化学吸附技术形成硼化物阻挡层
公开(公告)号：US07208413B2
公开(公告)日：2007-04-24
申请号：US10993925
申请日：2004-11-19
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.
摘要翻译：公开了形成用于集成电路制造的硼化物层的方法。在一个实施方案中，硼化物层通过将含硼化合物和一种难熔金属化合物的单层化学吸附到基底上而形成。在替代实施例中，硼化物层具有复合结构。复合硼化物层结构包括两种或多种难熔金属。复合硼化物层通过在基材上依次化学吸附硼化合物的单层和两种或更多种难熔金属化合物而形成。

34. 发明授权

US06831004B2 Formation of boride barrier layers using chemisorption techniques 有权
公开(公告)号：US06831004B2
公开(公告)日：2004-12-14
申请号：US10387990
申请日：2003-03-13
申请人： Jeong Soo Byun , Alfred Mak
发明人： Jeong Soo Byun , Alfred Mak
IPC分类号： H01L214763
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.

35. 发明授权

US5744398A Method of forming electrode of semiconductor device 失效
标题翻译：形成半导体器件电极的方法
公开(公告)号：US5744398A
公开(公告)日：1998-04-28
申请号：US788107
申请日：1997-01-23
申请人： Jeong Soo Byun , Byung Hak Lee
发明人： Jeong Soo Byun , Byung Hak Lee
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78 , H01L21/44 , H01L21/48
CPC分类号： H01L21/28518 , H01L21/28061
摘要： A method of forming an electrode of a semiconductor device includes the steps of forming an insulating layer on a semiconductor substrate, forming a tungsten silicide layer on the insulating layer, implanting impurity ions into the tungsten silicide layer to form an impurity region in a lower portion of the tungsten silicide layer, and carrying out a heat treatment to the substrate on which the tungsten silicide layer is formed.
摘要翻译：形成半导体器件的电极的方法包括以下步骤：在半导体衬底上形成绝缘层，在绝缘层上形成硅化钨层，将杂质离子注入到硅化钨层中，以在下部形成杂质区的硅化钨层，对其上形成有硅化钨层的基板进行热处理。

36. 发明申请

US20120003782A1 METHOD FOR FORMING IMAGE SENSOR WITH SHIELD STRUCTURES 有权
标题翻译：用于形成具有屏蔽结构的图像传感器的方法
公开(公告)号：US20120003782A1
公开(公告)日：2012-01-05
申请号：US13227376
申请日：2011-09-07
申请人： Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
发明人： Jeong Soo Byun , Vladimir Korobov , Oliver Pohland
IPC分类号： H01L31/18
CPC分类号： H01L27/14685 , H01L27/14625 , H01L27/14687
摘要： An image sensor having shield structures and methods of forming the same are provided. Generally, the image sensor includes: (i) substrate having at least one photosensitive element formed therein; (ii) a dielectric layer overlying the substrate and the photosensitive element; and (iii) an annular reflective waveguide disposed in the dielectric layer above the photosensitive element to reduce cross-talk between adjacent elements of the sensor while increasing sensitivity of the sensor. In certain embodiments, the sensor further includes a photoshield disposed in the dielectric above the photosensitive element and about the waveguide to further reduce the possibility of cross-talk. Other embodiments are also disclosed.
摘要翻译：提供具有屏蔽结构的图像传感器及其形成方法。通常，图像传感器包括：（i）具有形成在其中的至少一个感光元件的基板; （ii）覆盖所述基底和所述感光元件的电介质层; 和（iii）设置在光敏元件上方的电介质层中的环形反射波导，以减小传感器的相邻元件之间的串扰，同时增加传感器的灵敏度。在某些实施例中，传感器还包括设置在感光元件上方的电介质中以及围绕波导的光电二极管，以进一步降低串扰的可能性。还公开了其他实施例。

37. 发明授权

US07238552B2 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics 有权
标题翻译：用于在表面处理后沉积钨以提高膜特性的方法和装置
公开(公告)号：US07238552B2
公开(公告)日：2007-07-03
申请号：US11130515
申请日：2005-05-17
申请人： Jeong Soo Byun
发明人： Jeong Soo Byun
IPC分类号： H01L21/82
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/14 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques. Alternatively, the formed tungsten layer can be used to fill an aperture.
摘要翻译：在衬底上形成难熔金属层的方法和系统包括引入还原剂，例如PH 3或B 2 H 6 C 6，然后引入含钨化合物，例如WF 6 N，以形成钨层。据信，还原剂降低了钨层的氟含量，同时改善了钨层的阶梯覆盖和电阻率。据信，钨膜的改进的特性可归因于还原剂和含钨化合物之间的化学亲和力。化学亲合力提供吸附的化学物质的更好的表面迁移率，并且在钨层的成核阶段更好地还原WF 6。该方法可以进一步包括依次引入还原剂，例如PH 3或B 2 H 6，以及含钨化合物以沉积钨层。形成的钨层可以用作成核层，随后使用标准CVD技术大量沉积钨层。或者，形成的钨层可用于填充孔。

38. 发明授权

US07049211B2 In-situ-etch-assisted HDP deposition using SiF4 失效
标题翻译：使用SiF4进行原位蚀刻辅助HDP沉积
公开(公告)号：US07049211B2
公开(公告)日：2006-05-23
申请号：US11089874
申请日：2005-03-25
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： H01L21/44 , H01L21/28 , H01L21/469 , H01L21/31
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF 4 N，流动气体，硅源和氧化性气体反应物的工艺气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。

39. 发明授权

US5712181A Method for the formation of polycide gate in semiconductor device 失效
标题翻译：半导体器件中多晶硅栅极的形成方法
公开(公告)号：US5712181A
公开(公告)日：1998-01-27
申请号：US565634
申请日：1995-11-29
申请人： Jeong Soo Byun , Hyeong Joon Kim
发明人： Jeong Soo Byun , Hyeong Joon Kim
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78 , H01L21/265
CPC分类号： H01L21/28052 , H01L2924/0002
摘要： A method for the formation of gate in a semiconductor device is disclosed. The method for the formation of gate in a semiconductor device, comprising the steps of: forming amorphous silicon and polysilicon over a gate insulating film atop a semiconductor substrate, in due order; implanting impurity ions into the polysilicon and carrying out heat treatment; and forming a layer of a refractory metal over the silicon and carrying out heat treatment, to form polycide. Capable of preventing the degradation which is attributed to the penetration of impurities and thermal instability when forming a P.sup.+ polygate, the method contribute to the improvement in electrical properties.
摘要翻译：公开了一种在半导体器件中形成栅极的方法。一种在半导体器件中形成栅极的方法，包括以下步骤：在半导体衬底顶上的栅极绝缘膜上形成非晶硅和多晶硅; 将杂质离子注入多晶硅并进行热处理; 在硅上形成难熔金属层，进行热处理，形成多晶硅化合物。能够防止由于杂质渗透导致的降解和形成P +多孔板时的热不稳定性，该方法有助于电性能的改善。

40. 发明授权

US5668040A Method for forming a semiconductor device electrode which also serves as a diffusion barrier 失效
标题翻译：形成也用作扩散阻挡层的半导体器件电极的方法
公开(公告)号：US5668040A
公开(公告)日：1997-09-16
申请号：US601621
申请日：1996-02-14
申请人： Jeong Soo Byun
发明人： Jeong Soo Byun
IPC分类号： H01L21/02 , H01L21/283
CPC分类号： H01L28/60 , H01L28/55
摘要： A capacitor element includes a pervoskite dielectric film and an electrode having excellent electrical contact characteristic and improved adhesion to an underlying surface. In a method for fabricating the electrode, a group IVB or VB refractory metal transition element is deposited on a silicon substrate or a silicon oxide layer. A group VIII near noble metal transition element is then deposited on the group IVB or VB refractory metal layer. The substrate and deposited layers is then subjected to a heat treatment in an ammonia ambient to form a refractory metal nitride layer between the refractory metal and near noble metal layers. In addition, if the refractory metal is deposited on a silicon substrate, a silicide layer is formed between the refractory metal layer and the substrate during heat treatment. If, however, the refractory metal layer is provided on a silicon oxide layer, a refractory metal oxide is formed during the heat treatment. Examples of group IVB refractory metal transition elements include Ti, Zr and Hf; examples of group VIII refractory metal transition elements include Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt; and examples of the group VB refractory metals include V, Nb, and Ta.
摘要翻译：电容器元件包括透明电介质膜和具有优异的电接触特性和改善对下表面的粘附性的电极。在制造电极的方法中，IVB或VB族难熔金属过渡元素沉积在硅衬底或氧化硅层上。然后将贵金属过渡元素附近的VIII族沉积在IVB或VB族难熔金属层上。然后将基底和沉积层在氨环境中进行热处理，以在难熔金属和近贵金属层之间形成难熔金属氮化物层。此外，如果难熔金属沉积在硅衬底上，则在热处理期间在难熔金属层和衬底之间形成硅化物层。然而，如果难熔金属层设置在氧化硅层上，则在热处理期间形成难熔金属氧化物。 IVB族难熔金属过渡元素的实例包括Ti，Zr和Hf; 第VIII族难熔金属过渡元素的实例包括Fe，Co，Ni，Ru，Rh，Pd，Os，Ir和Pt; VB族难熔金属的实例包括V，Nb和Ta。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式