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31. 发明申请

US20110065040A1 PHOTORESIST COMPOSITION 有权
标题翻译：光电组合物
公开(公告)号：US20110065040A1
公开(公告)日：2011-03-17
申请号：US12880852
申请日：2010-09-13
申请人： Tatsuro MASUYAMA , Mitsuhiro Hata
发明人： Tatsuro MASUYAMA , Mitsuhiro Hata
IPC分类号： G03F7/004 , C07C271/22 , C07D207/16 , G03F7/20
CPC分类号： C07C271/22 , C07D207/16 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/20
摘要： The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1 represents a C2-C12 alkyl group which can have one or more hydroxyl groups, etc., R2 and R3 each independently represent a hydrogen atom, etc., R4, R5 and R6 each independently represent a hydrogen atom, etc., A1 represents a single bond or a C1-C2 alkylene group in which one or more —CH2— can be replaced by —O—.
摘要翻译：本发明提供一种光致抗蚀剂组合物，其包含树脂，酸产生剂和由式（I）表示的化合物：其中R1表示可具有一个或多个羟基的C 2 -C 12烷基等，R 2和R 3各自独立地表示氢原子等，R4，R5和R6各自独立地表示氢原子等，A1表示单键或C1-C2亚烷基，其中一个或多个-CH2-可以被-O - 。

32. 发明申请

US20100273112A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN 审中-公开
标题翻译：生产光电子图案的工艺
公开(公告)号：US20100273112A1
公开(公告)日：2010-10-28
申请号：US12763357
申请日：2010-04-20
申请人： Mitsuhiro Hata , Satoshi Yamamoto , Yusuke Fuji
发明人： Mitsuhiro Hata , Satoshi Yamamoto , Yusuke Fuji
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/091
摘要： The present invention provides a process for producing a photoresist pattern comprising the following steps (A) to (D): (A) a step of forming the first photoresist film on a substrate using the first photoresist composition comprising a resin comprising a structural unit having an acid-labile group in its side chain and being itself insoluble or poorly soluble in an alkali aqueous solution but becoming soluble in an alkali aqueous solution by the action of an acid, an acid generator, and a cross-linking agent, exposing the first photoresist film to radiation followed by developing the exposed first photoresist film to obtain the first photoresist pattern, (B) a step of baking the obtained first photoresist pattern at 190 to 250° C. for 10 to 60 seconds, (C) a step of forming the second photoresist film on the substrate on which the first photoresist pattern has been formed using the second photoresist composition, exposing the second photoresist film to radiation, and (D) a step of developing the exposed second photoresist film to obtain the second photoresist pattern.
摘要翻译：本发明提供一种制造光致抗蚀剂图案的方法，包括以下步骤（A）至（D）：（A）使用包含树脂的第一光致抗蚀剂组合物在基板上形成第一光致抗蚀剂膜的步骤，所述树脂包括具有其侧链酸性不稳定基团本身不溶于或难溶于碱水溶液，但通过酸，酸发生剂和交联剂的作用变得可溶于碱性水溶液中，使第一将曝光的第一光致抗蚀剂膜显影以获得第一光致抗蚀剂图案，（B）在190至250℃下烘烤获得的第一光致抗蚀剂图案10至60秒的步骤，（C）步骤在所述基板上形成所述第二光致抗蚀剂膜，使用所述第二光致抗蚀剂组合物在其上形成所述第一光致抗蚀剂图案，将所述第二光致抗蚀剂膜暴露于辐射，以及（D）旋转曝光的第二光致抗蚀剂膜以获得第二光致抗蚀剂图案。

33. 发明授权

US08900790B2 Photoresist composition 有权
标题翻译：光刻胶组成
公开(公告)号：US08900790B2
公开(公告)日：2014-12-02
申请号：US12880852
申请日：2010-09-13
申请人： Tatsuro Masuyama , Mitsuhiro Hata
发明人： Tatsuro Masuyama , Mitsuhiro Hata
IPC分类号： G03F7/004 , C07C271/22 , G03F7/039 , G03F7/20 , C07D207/16
CPC分类号： C07C271/22 , C07D207/16 , G03F7/0045 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/20
摘要： A photoresist composition comprising a resin, an acid generator and a compound represented by the formula (I): wherein R1 represents a C2-C12 alkyl group which can have one or more hydroxyl groups, etc., R2 and R3 each independently represent a hydrogen atom, etc., R4, R5 and R6 each independently represent a hydrogen atom, etc., A1 represents a single bond or a C1-C2 alkylene group in which one or more —CH2— can be replaced by —O—.
摘要翻译：一种光致抗蚀剂组合物，其包含树脂，酸产生剂和由式（I）表示的化合物：其中R 1表示可具有一个或多个羟基的C 2 -C 12烷基等，R 2和R 3各自独立地表示氢原子等，R4，R5和R6各自独立地表示氢原子等，A1表示单键或C1-C2亚烷基，其中一个或多个-CH2-可以被-O-代替。

34. 发明授权

US08475999B2 Compound and photoresist composition containing the same 失效
标题翻译：含有其的化合物和光致抗蚀剂组合物
公开(公告)号：US08475999B2
公开(公告)日：2013-07-02
申请号：US12852237
申请日：2010-08-06
申请人： Tatsuro Masuyama , Mitsuhiro Hata
发明人： Tatsuro Masuyama , Mitsuhiro Hata
IPC分类号： G03C1/00
CPC分类号： C07D207/16 , C07C271/22 , C07C271/24 , C07C271/28 , C07C271/34 , C07C271/36 , C07C271/38 , C07C2601/14 , C07C2602/28 , C07C2603/74 , C07D209/44 , C07D211/60 , G03F7/0045
摘要： The present invention provides a compound represented by the formula (C1): wherein Rc2 represents a C6-C10 aromatic hydrocarbon group having at least one nitro group and Rc1 represents a group represented by the formula (1): wherein Rc4 represents a hydrogen atom etc., Rc5 represents a C1-C30 divalent hydrocarbon group, and Rc3 represents a group represented by the formula (3-1), (3-2) or (3-3): wherein Rc6, Rc7, Rc8, Rc9, Rc10, Rc11, Rc12, Rc13 and Rc14 each independently represent a C1-C30 hydrocarbon group, and a photoresist composition comprising a resin, an acid generator and the compound represented by the formula (C1).
摘要翻译：本发明提供由式（C1）表示的化合物：其中Rc2表示具有至少一个硝基的C6-C10芳族烃基，Rc1表示由式（1）表示的基团：其中Rc4表示氢原子等 Rc5表示C1-C30二价烃基，Rc3表示由式（3-1），（3-2）或（3-3）表示的基团：其中Rc6，Rc7，Rc8，Rc9，Rc10， Rc11，Rc12，Rc13和Rc14各自独立地表示C1-C30烃基，以及包含树脂，酸产生剂和由式（C1）表示的化合物的光致抗蚀剂组合物。

35. 发明申请

US20110189618A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20110189618A1
公开(公告)日：2011-08-04
申请号：US13062180
申请日：2009-09-01
申请人： Mitsuhiro Hata , Nobuo Ando , Satoshi Yamamoto , Junji Shigematsu , Akira Kamabuchi
发明人： Mitsuhiro Hata , Nobuo Ando , Satoshi Yamamoto , Junji Shigematsu , Akira Kamabuchi
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
摘要翻译：抗蚀剂处理方法包括以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现通过酸，光酸产生剂（B），交联剂（C）和酸放大器（D）的作用将其溶于碱水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）硬烘烤第一抗蚀剂图案，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

36. 发明申请

US20110171586A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20110171586A1
公开(公告)日：2011-07-14
申请号：US13003178
申请日：2009-07-07
申请人： Mitsuhiro Hata , Satoshi Yamamoto , Takayuki Miyagawa
发明人： Mitsuhiro Hata , Satoshi Yamamoto , Takayuki Miyagawa
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2022 , G03F7/38 , G03F7/40
摘要： A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
摘要翻译：一种抗蚀剂处理方法，具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现通过酸，光酸产生剂（B）和交联剂（C）的作用将其溶解在碱性水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀剂膜的整个表面，然后通过掩模曝光第一抗蚀剂膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）通过掩模使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

37. 发明申请

US20110039208A1 PHOTORESIST COMPOSITION CONTAINING THE SAME 审中-公开
标题翻译：含有它的光电组合物
公开(公告)号：US20110039208A1
公开(公告)日：2011-02-17
申请号：US12852083
申请日：2010-08-06
申请人： Mitsuhiro Hata , Tatsuro Masuyama
发明人： Mitsuhiro Hata , Tatsuro Masuyama
IPC分类号： G03F7/004
CPC分类号： G03F7/0045
摘要： The present invention provides a photoresist composition comprising a resin, an acid generator and a compound represented by the formula (C1): wherein Rc2 represents a C7-C20 aralkyl group which can have one or more substituents, and Rc1 represents a group represented by the formula (1): wherein Rc3 and Rc4 each independently represent a hydrogen atom or a linear, branched chain or cyclic C1-C12 aliphatic hydrocarbon group, Rc5 represents a C1-C30 divalent organic group, and Rc3 and Rc4 or Rc5 can be bonded each other to form a ring together with the nitrogen atom to which Rc3 and Rc4 or Rc5 are bonded.
摘要翻译：本发明提供一种光致抗蚀剂组合物，其包含树脂，酸产生剂和由式（C1）表示的化合物：其中Rc2表示可具有一个或多个取代基的C 7 -C 20芳烷基，R c1表示由式（1）：其中Rc3和Rc4各自独立地表示氢原子或直链，支链或环状的C1-C12脂族烃基，Rc5表示C1-C30二价有机基团，Rc3和Rc4或Rc5可以各自键合另外与Rc3和Rc4或Rc5键合的氮原子一起形成环。

38. 发明申请

US20100279226A1 RESIST PROCESSING METHOD 审中-公开
标题翻译：电阻加工方法
公开(公告)号：US20100279226A1
公开(公告)日：2010-11-04
申请号：US12810793
申请日：2008-12-22
申请人： Mitsuhiro Hata , Yoshiyuki Takata , Satoshi Yamaguchi , Ichiki Takemoto , Takayuki Miyagawa , Yusuke Fuji
发明人： Mitsuhiro Hata , Yoshiyuki Takata , Satoshi Yamaguchi , Ichiki Takemoto , Takayuki Miyagawa , Yusuke Fuji
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： H01L21/0275 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40
摘要： The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern.
摘要翻译：本发明的目的是提供一种制造抗蚀剂图案的方法，其中可以形成极细和高精度的抗蚀剂图案，该抗蚀剂图案是使用多图案化方法中形成第一抗蚀剂图案的抗蚀剂组合物获得的，双重图案化方法抗蚀剂处理方法包括：通过将第一抗蚀剂组合物施加到基材上并干燥来形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含树脂（A），光酸产生剂（B）和交联剂（C），树脂（A）具有酸不稳定基团，在碱性水溶液中不溶或难溶，但通过酸的作用使其溶于碱水溶液中; 预烘烤曝光处理; 曝光后烘烤; 发展; 硬烘烤第一抗蚀剂图案; 得到第二抗蚀膜; 预烘烤; 曝光处理; 曝光后烘烤; 显影以获得第二抗蚀剂图案。

39. 发明授权

US08062829B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography 有权
标题翻译：用于浸没光刻的化学放大抗蚀剂组合物和化学放大抗蚀剂组合物
公开(公告)号：US08062829B2
公开(公告)日：2011-11-22
申请号：US12395963
申请日：2009-03-02
申请人： Mitsuhiro Hata , Yusuke Fuji , Takayuki Miyagawa
发明人： Mitsuhiro Hata , Yusuke Fuji , Takayuki Miyagawa
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/111 , Y10S430/122
摘要： A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). wherein X1 represents a hydrogen atom, a C1 to C4 alkyl group, etc., Y in each occurrence independently represent a hydrogen atom or an alkyl group, and n is an integer of 1 to 14, R1 to R4 independently represent a hydrogen atom, an alkyl group, etc., and A+ represents an organic counterion, E− represents CF3SO3—, C2F5SO3—, C4F9SO3—, etc., Y1 and Y2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group.
摘要翻译：一种化学放大抗蚀剂组合物，其包含：树脂，其包含在侧链中具有酸不稳定基团的结构单元，由式（I）表示的结构单元和具有多环内酯结构的结构单元，并且其是可溶的在有机溶剂中，不溶于或难溶于碱水溶液，但通过酸的作用可溶于碱水溶液; 和由式（II）表示的酸发生剂。其中X 1表示氢原子，C 1〜C 4烷基等，Y各自独立地表示氢原子或烷基，n表示1〜14的整数，R 1〜R 4分别表示氢原子，烷基等，A +表示有机抗衡离子，E表示CF 3 SO 3 - ，C 2 F 5 SO 3 - ，C 4 F 9 SO 3 - 等，Y 1和Y 2分别表示氟原子或C 1〜C 6全氟烷基。

40. 发明授权

US07981985B2 Polymer and chemically amplified resist composition comprising the same 有权
标题翻译：包含其的聚合物和化学增幅抗蚀剂组合物
公开(公告)号：US07981985B2
公开(公告)日：2011-07-19
申请号：US12426038
申请日：2009-04-17
申请人： Yusuke Fuji , Mitsuhiro Hata
发明人： Yusuke Fuji , Mitsuhiro Hata
IPC分类号： C08F224/00 , G03F7/004 , C08F4/04
CPC分类号： C08F220/10 , C08F220/18 , C08F220/28 , C08F220/32
摘要： The present invention provides a polymer containing a structural unit represented by the formula (Ia) or (Ib): wherein R1, R2, R3, n, Z1, R4, R5 and m are defined in the specification, a structural unit represented by the formula (II): wherein R6, R7, R8, R9, Z2, n′ and Z′ are defined in the specification, and a structural unit represented by the formula (III): wherein R10, R11, 1′ and Z3 are defined in the specification.
摘要翻译：本发明提供含有由式（Ia）或（Ib）表示的结构单元的聚合物：其中R1，R2，R3，n，Z1，R4，R5和m在说明书中定义，由式（II）：其中R 6，R 7，R 8，R 9，Z 2，n'和Z'在本说明书中定义，和由式（III）表示的结构单元：其中R10，R11,1'和Z3被定义在规范中。

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