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31. 发明申请

US20080014743A1 METHOD OF FABRICATING SEMICONDUCTOR INTERCONNECTIONS 失效
标题翻译：制造半导体互连的方法
公开(公告)号：US20080014743A1
公开(公告)日：2008-01-17
申请号：US11765006
申请日：2007-06-19
申请人： Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
发明人： Takashi Onishi , Mikako Takeda , Masao Mizuno , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76864 , H01L21/76867
摘要： A method of fabricating semiconductor interconnections is provided which can form a Ti-rich layer as a barrier layer and which can embed pure Cu material as interconnection material into every corner of grooves provided in an insulating film even when the grooves have a narrow minimum width and are deep. The method may include the steps of forming one or more grooves in an insulating film on a semiconductor substrate, the recess having a minimum width of 0.15 μm or less and a ratio of a depth of the groove to the minimum width thereof (depth/minimum width) of 1 or more, forming a Cu alloy thin film containing 0.5 to 10 atomic % of Ti in the groove of the insulated film along a shape of the groove in a thickness of 10 to 50 nm, forming a pure Cu thin film in the groove with the Cu alloy thin film attached thereto, and annealing the substrate with the films at 350° C. or more to allow the Ti to be precipitated between the insulating film and the Cu alloy thin film.
摘要翻译：提供一种制造半导体互连的方法，其可以形成富Ti层作为阻挡层，并且即使当沟槽具有窄的最小宽度时，也可以将纯Cu材料作为互连材料嵌入设置在绝缘膜中的沟槽的每个角落，并且很深该方法可以包括以下步骤：在半导体衬底上的绝缘膜中形成一个或多个凹槽，凹槽具有0.15μm或更小的最小宽度以及凹槽的深度与其最小宽度的比（深度/最小值宽度）为1以上，沿着形状为10〜50nm的槽的形状，在绝缘膜的槽内形成含有0.5〜10原子％的Ti的Cu合金薄膜，形成纯Cu薄膜与Cu合金薄膜连接的槽，并使膜在350℃以上退火，使Ti在绝缘膜与Cu合金薄膜之间析出。

32. 发明申请

US20080003459A1 HARD FILM 有权
标题翻译：硬膜
公开(公告)号：US20080003459A1
公开(公告)日：2008-01-03
申请号：US11844846
申请日：2007-08-24
申请人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
发明人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
IPC分类号： B32B9/00
CPC分类号： C04B35/584 , C04B2235/402 , C04B2235/404 , C04B2235/96 , C23C14/0635 , C23C14/0641 , C23C14/0664 , C23C28/044 , C23C28/048 , C23C28/42 , C23C30/00 , Y10T428/24942
摘要： A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, wherein x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.
摘要翻译：由含有（M 1-x-Si x Si）（C 1-x N d）的材料形成的硬膜，其中M是Al中的至少一种和3A，4A，5A和6A族中的元素，0.45 <= x <= 0.98和0 <= d <= 1，其中x，1-x，d 和1-d分别是Si，M，N和C的原子比。

33. 发明授权

US07294416B2 Hard film 有权
标题翻译：硬片
公开(公告)号：US07294416B2
公开(公告)日：2007-11-13
申请号：US10807332
申请日：2004-03-24
申请人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
发明人： Kenji Yamamoto , Seiichiro Ohmoto , Mikako Takeda
IPC分类号： B32B9/00
CPC分类号： C04B35/584 , C04B2235/402 , C04B2235/404 , C04B2235/96 , C23C14/0635 , C23C14/0641 , C23C14/0664 , C23C28/044 , C23C28/048 , C23C28/42 , C23C30/00 , Y10T428/24942
摘要： A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.
摘要翻译：由含有（M 1-x-Si x Si）（C 1-x N d）的材料形成的硬膜，其中M是Al中的至少一种和3A，4A，5A和6A族中的元素，0.45 <= x <= 0.98和0 <= d <= 1，其中x，1-x，d 和1-d分别是Si，M，N和C的原子比。

34. 发明申请

US20070218690A1 FABRICATION METHOD FOR SEMICONDUCTOR INTERCONNECTIONS 有权
标题翻译：半导体互连的制造方法
公开(公告)号：US20070218690A1
公开(公告)日：2007-09-20
申请号：US11532796
申请日：2006-09-18
申请人： Takashi Onishi , Masao Mizuno , Mikako Takeda , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
发明人： Takashi Onishi , Masao Mizuno , Mikako Takeda , Susumu Tsukimoto , Tatsuya Kabe , Toshifumi Morita , Miki Moriyama , Kazuhiro Ito , Masanori Murakami
IPC分类号： H01L21/44
CPC分类号： H01L21/76882 , H01L21/76843 , H01L21/76867 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： There is provided a fabrication method for interconnections, capable of embedding a Cu-alloy in recesses in an insulating film, and forming a barrier layer on an interface between the an insulating film and Cu-interconnections, without causing a rise in electric resistivity of the interconnections when fabricating semiconductor interconnections of the Cu-alloy embedded in the recesses provided in the insulating film on a semiconductor substrate. The fabrication method for the interconnections may comprise the steps of forming the respective recesses having a minimum width not more than 0.15 μm, and a ratio of a depth thereof to the minimum width (a depth/minimum width ratio) not less than 1, forming a Cu-alloy film containing Ti in a range of 0.5 to 3 at %, and N in a range of 0.4 to 2.0 at % over the respective recesses, and subsequently, annealing the Cu-alloy film to not lower than 200° C., and pressurizing the Cu-alloy film to not less than 50 MPa to thereby embed the Cu-alloy film into the respective recesses.
摘要翻译：提供了一种用于互连的制造方法，其能够将铜合金嵌入绝缘膜中的凹部中，并且在绝缘膜和Cu互连之间的界面上形成阻挡层，而不会导致电阻率的上升当制造嵌入在设置在半导体衬底上的绝缘膜中的凹部中的Cu合金的半导体互连时，互连。互连的制造方法可以包括以下步骤：形成具有不大于0.15μm的最小宽度的相应凹槽，以及其深度与最小宽度（深度/最小宽度比）的比不小于1，形成在各凹部中含有0.5〜3原子％的Ti，N为0.4〜2.0原子％的Ti的Cu合金膜，然后将Cu合金膜退火至200℃以上。并将Cu合金膜加压至50MPa以上，从而将Cu合金膜嵌入各凹部。

35. 发明申请

US20060275623A1 Steel sheet for dissimilar materials weldbonding to aluminum material and dissimilar materials bonded body 有权
标题翻译：用于不同材料的钢板焊接到铝材料和异种材料粘结体
公开(公告)号：US20060275623A1
公开(公告)日：2006-12-07
申请号：US11436703
申请日：2006-05-19
申请人： Mikako Takeda , Wataru Urushihara , Katsushi Matsumoto , Jun Katoh
发明人： Mikako Takeda , Wataru Urushihara , Katsushi Matsumoto , Jun Katoh
IPC分类号： C22C38/00 , B32B15/10
CPC分类号： C22C21/06 , B23K35/0261 , B23K35/286 , B32B15/012 , C21D9/46 , C22C21/02 , C22C21/08 , C22C38/02 , C22C38/04 , C22C38/12 , C22C38/22 , C22C38/26 , C22C38/28 , C22C38/34 , Y10T428/12472 , Y10T428/12757
摘要： Disclosed is a steel sheet for dissimilar materials weldbonding to an aluminum material, the steel sheet containing, in mass, C: 0.02 to 0.3%, Si: 0.2 to 5.0%, Mn: 0.2 to 2.0%, and Al: 0.002 to 0.1%, further one or more of Ti: 0.005 to 0.10%, Nb: 0.005 to 0.10%, Cr: 0.05 to 1.0%, and Mo: 0.01 to 1.0%, and the balance consisting of Fe and unavoidable impurities. In the steel sheet, (i) the proportion of the oxide containing Mn and Si by 1 at. % or more in total in the external oxide layer which is newly formed after an original oxide layer having already existed on the surface of the steel sheet is once removed and now exists on the surface of the base steel material of the steel sheet is 50 to 80% in terms of the average proportion of the total length of the oxide to 1 μm length of the interface between the base steel material and the external oxide layer nearly in the horizontal direction, (ii) the proportion of the internal oxide, including oxide at the grain boundary, which exists in the steel region up to the depth of 10 μm from the surface of said base steel material of said steel sheet and contains Mn and Si by 1 at. % or more in total is 3% or more to less than 10% in terms of the average area percentage of said internal oxide in the visual field of 10 μm2 of said steel region, (iii) the proportion of the internal oxide, including oxide at the grain boundary, which exists in the steel region exceeding 10 μm in depth from the surface of said base steel material of said steel sheet and contains Mn and Si by 1 at. % or more in total is 0.1% or less in terms of the average area percentage of said internal oxide in the visual field of 10 μm2 of said steel region.
摘要翻译：公开了一种用于与铝材料焊接的不同材料的钢板，该钢板以质量计含有C：0.02〜0.3％，Si：0.2〜5.0％，Mn：0.2〜2.0％，Al：0.002〜0.1％，进一步Ti：0.005〜0.10％，Nb：0.005〜0.10％，Cr：0.05〜1.0％，Mo：0.01〜1.0％，余量由Fe和不可避免的杂质组成。在钢板中，（i）含有Mn和Si的氧化物的比例为1at。在钢板表面已经存在的原始氧化物层被一次除去之后新形成的外部氧化物层中，总共存在％以上，现在存在于钢板的基体钢材的表面上，为50〜以基本钢材和外部氧化物层之间的界面几乎在水平方向上的氧化物总长度与1mm长度的平均比例为80％，（ii）内部氧化物（包括氧化物）的比例在与所述钢板的所述基体钢材的表面直径相距10μm的钢区域存在的晶界，其含有Mn和Si为1at。（iii）所述钢区域的10mm 2的视野内的所述内部氧化物的平均面积百分比为3％以上至小于10％，（iii）内部氧化物，包括在所述钢板的所述基体钢材表面上存在于钢区域内的深度超过10μm的晶界处的氧化物，并且含有Mn和Si为1at。所述钢区域的10mum 2视野内的所述内部氧化物的平均面积百分比，总计为0.1％以下。

36. 发明申请

US20060261137A1 Dissimilar metal joint member with good corrosion resistance and method for manufacturing same 审中-公开
标题翻译：具有良好耐腐蚀性的异种金属接头构件及其制造方法
公开(公告)号：US20060261137A1
公开(公告)日：2006-11-23
申请号：US11130139
申请日：2005-05-17
申请人： Hidekazu Ido , Mikako Takeda , Wataru Urushihara , Jun Katoh
发明人： Hidekazu Ido , Mikako Takeda , Wataru Urushihara , Jun Katoh
IPC分类号： C04B9/02 , B23K1/20
CPC分类号： C23C18/54
摘要： A method for manufacturing a dissimilar metal joint member having an excellent corrosion resistance is provided. The method comprises immersing a member having an iron material and Al or an Al alloy material jointed together in a solution containing fluoro complex ions and zinc ions to cause metallic zinc to be deposited in the vicinity of a jointed portion.
摘要翻译：提供一种具有优异耐腐蚀性的异种金属接头件的制造方法。该方法包括将具有铁材料的构件和连接在一起的Al或Al合金材料浸入含有氟络合离子和锌离子的溶液中，使金属锌沉积在接合部分附近。

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