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    • 31. 发明授权
    • Plasma treatment apparatus and plasma treatment method
    • 等离子体处理装置和等离子体处理方法
    • US08148268B2
    • 2012-04-03
    • US12040011
    • 2008-02-29
    • Kohei SatoHideaki KondoSusumu TauchiAkitaka Makino
    • Kohei SatoHideaki KondoSusumu TauchiAkitaka Makino
    • H01L21/302H01L21/461
    • H01J37/3244H01J37/32449H01J37/32834
    • The invention provides a plasma treatment apparatus or a plasma treatment method having a high productivity while maintaining a stable treatment performance. In a plasma treatment apparatus feeding a plurality of gases fed into the treatment chamber and treating a sample arranged within the treatment chamber by a plasma formed by using the plurality of gases, the plasma treatment apparatus has a plurality of feeding gas lines in which the plurality of gases respectively pass, a plurality of gas flow rate regulators respectively arranged on the feeding gas lines and respectively regulating flow rates of the plurality of gases, and a testing gas flow path coupled to the gas line so as to be arranged outside the treatment chamber and arranging a tester testing a flow rate of a gas from a gas flow rate controller therein, and the plasma treatment apparatus tests the gas flow rate regulator on a gas line corresponding to the gas which is not used for the treatment in the plurality of gases in parallel with the treatment.
    • 本发明提供一种具有高生产率的等离子体处理装置或等离子体处理方法,同时保持稳定的处理性能。 在等离子体处理装置中,供给进入处理室的多个气体并且通过使用多个气体形成的等离子体处理在处理室内布置的样品,等离子体处理装置具有多个供给气体管线,其中多个 气体分别通过多个气体流量调节器,分别布置在供给气体管线上并分别调节多个气体的流量,以及连接到气体管线的测试气体流动路径,以布置在处理室外部 以及对从气体流量控制器的气体流量进行测试的试验机进行排列,等离子体处理装置对气体流量调节器进行气体流量调节,所述气体管线对应于多个气体中不用于处理的气体 与治疗同时进行。
    • 33. 发明申请
    • VACUUM PROCESSING APPARATUS
    • 真空加工设备
    • US20090324367A1
    • 2009-12-31
    • US12203168
    • 2008-09-03
    • Masakazu IsozakiAkitaka MakinoShingo KimuraMinoru Yatomi
    • Masakazu IsozakiAkitaka MakinoShingo KimuraMinoru Yatomi
    • H01L21/677
    • H01L21/6719H01L21/67017H01L21/67196
    • A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
    • 真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器,耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器, 被输送的处理过的工件;大气转移容器,其连接到真空传送容器的前侧,并且其前表面上包括安装在其上的工作台,其中工件被接收在其中,用于将工件传送到内部空间中 大气压力的位置调整机构,位于左右两端的大气输送容器内,用于调整工件的位置;以及调节器,其配置在该机器的下部与底面之间, 流体被供给到真空处理容器。
    • 34. 发明申请
    • PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD
    • 等离子体处理装置和等离子体处理方法
    • US20090152242A1
    • 2009-06-18
    • US12040011
    • 2008-02-29
    • Kohei SatoHideaki KondoSusumu TauchiAkitaka Makino
    • Kohei SatoHideaki KondoSusumu TauchiAkitaka Makino
    • C23F1/00
    • H01J37/3244H01J37/32449H01J37/32834
    • The invention provides a plasma treatment apparatus or a plasma treatment method having a high productivity while maintaining a stable treatment performance. In a plasma treatment apparatus feeding a plurality of gases fed into the treatment chamber and treating a sample arranged within the treatment chamber by a plasma formed by using the plurality of gases, the plasma treatment apparatus has a plurality of feeding gas lines in which the plurality of gases respectively pass, a plurality of gas flow rate regulators respectively arranged on the feeding gas lines and respectively regulating flow rates of the plurality of gases, and a testing gas flow path coupled to the gas line so as to be arranged outside the treatment chamber and arranging a tester testing a flow rate of a gas from a gas flow rate controller therein, and the plasma treatment apparatus tests the gas flow rate regulator on a gas line corresponding to the gas which is not used for the treatment in the plurality of gases in parallel with the treatment.
    • 本发明提供一种具有高生产率的等离子体处理装置或等离子体处理方法,同时保持稳定的处理性能。 在等离子体处理装置中,供给进入处理室的多个气体并且通过使用多个气体形成的等离子体处理在处理室内布置的样品,等离子体处理装置具有多个供给气体管线,其中多个 气体分别通过多个气体流量调节器,分别布置在供给气体管线上并分别调节多个气体的流量,以及连接到气体管线的测试气体流动路径,以布置在处理室外部 以及对从气体流量控制器的气体流量进行测试的试验机进行排列,等离子体处理装置对气体流量调节器进行气体流量调节,所述气体管线对应于多个气体中不用于处理的气体 与治疗同时进行。
    • 35. 发明申请
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US20090001052A1
    • 2009-01-01
    • US12230460
    • 2008-08-29
    • Akitaka MakinoKoichi MishimaTakashi KanekoToyoharu Okumoto
    • Akitaka MakinoKoichi MishimaTakashi KanekoToyoharu Okumoto
    • C23F1/00
    • H01L21/67253G01N21/68H01J37/32935H01J37/32972
    • A plasma processing method for processing a sample mounted on a sample stage in a decompressable processing chamber in which plasma is produced. The method includes detecting a distribution of a concentration of a substance over a surface of a sample in the processing chamber using both of (1) a result of receiving light emission of the plasma and in different directions along the surface of the sample inside the processing chamber, detecting on the respective directions a constituent of the plasma and providing outputs indicative thereof, respectively, and (2) a result of taking in gases in the processing chamber and determining a mass of a constituent of the gases, and adjusting an operation of the processing of the sample so as to adjust a distribution of the processing on the sample surface based on the detected distribution of the concentration of the substance.
    • 一种用于处理安装在其中产生等离子体的减压处理室中的样品台上的样品的等离子体处理方法。 该方法包括使用(1)接收等离子体的发光和沿着处理中的样品表面的不同方向的结果,检测处理室中的样品表面上的物质浓度的分布 分别在各个方向上检测等离子体的成分并分别提供其输出的输出,以及(2)在处理室中吸入气体并确定气体成分的质量的结果,并且调节 根据检测到的物质浓度的分布,对样品进行处理,调整样品表面的处理分布。
    • 37. 发明授权
    • Vacuum processing apparatus
    • 真空加工设备
    • US07322561B2
    • 2008-01-29
    • US11068970
    • 2005-03-02
    • Susumu TauchiAkitaka Makino
    • Susumu TauchiAkitaka Makino
    • F16K25/00
    • H01L21/67196F16K51/02H01L21/67126H01L21/6719
    • The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel 509 having its inside decompressed, an opening 1201 disposed on a wall of the vacuum vessel for communicating the inside with the outside and through which a sample to be processed is taken in and out, a valve body 1001 disposed outside the wall for airtightly sealing or opening the opening 1201, a seal member 1002 disposed on the side of the valve body that comes into contact with the wall surrounding the opening for sealing the inside of the opening by being in contact with the wall and the valve body 1001 when the valve body seals the opening 1201, a first projection having a projected curved surface that comes into contact with the wall, and an overhang extending from this projection which is engaged with and attached to the inside of the valve body 1001, which constitute the seal member, and a cover 1003 disposed on the side of the valve body 1001 that comes into contact with the wall for pressing at least a portion of the overhang onto the valve body and determining the position thereof.
    • 本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。 真空处理装置包括其内部减压的真空容器509,设置在真空容器的壁上的开口1201,用于将内部与外部连通并且待处理样品通过其吸入和排出;阀体1001 设置在壁外侧用于气密地密封或打开开口1201;密封构件1002,其设置在阀体的与围绕开口的壁相接触的侧面上,用于通过与壁接触来密封开口的内部; 当阀体密封开口1201时的阀体1001,具有与壁接触的突出弯曲表面的第一突出部和从该突起延伸的突出部,该突出部与阀体1001的内部接合并附接 构成密封构件的盖体1003,以及设置在阀体1001的与壁接触的一侧的盖1003,用于将t的至少一部分按压 他突出到阀体上并确定其位置。
    • 38. 发明申请
    • Vacuum processing apparatus
    • 真空加工设备
    • US20060054854A1
    • 2006-03-16
    • US11068970
    • 2005-03-02
    • Susumu TauchiAkitaka Makino
    • Susumu TauchiAkitaka Makino
    • F16K3/00
    • H01L21/67196F16K51/02H01L21/67126H01L21/6719
    • The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel 509 having its inside decompressed, an opening 1201 disposed on a wall of the vacuum vessel for communicating the inside with the outside and through which a sample to be processed is taken in and out, a valve body 1001 disposed outside the wall for airtightly sealing or opening the opening 1201, a seal member 1002 disposed on the side of the valve body that comes into contact with the wall surrounding the opening for sealing the inside of the opening by being in contact with the wall and the valve body 1001 when the valve body seals the opening 1201, a first projection having a projected curved surface that comes into contact with the wall, and an overhang extending from this projection which is engaged with and attached to the inside of the valve body 1001, which constitute the seal member, and a cover 1003 disposed on the side of the valve body 1001 that comes into contact with the wall for pressing at least a portion of the overhang onto the valve body and determining the position thereof.
    • 本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。 真空处理装置包括其内部减压的真空容器509,设置在真空容器的壁上的开口1201,用于将内部与外部连通并且待处理样品通过其吸入和排出;阀体1001 设置在壁外侧用于气密地密封或打开开口1201;密封构件1002,其设置在阀体的与围绕开口的壁相接触的侧面上,用于通过与壁接触来密封开口的内部; 当阀体密封开口1201时的阀体1001,具有与壁接触的突出弯曲表面的第一突出部和从该突起延伸的突出部,该突出部与阀体1001的内部接合并附接 构成密封构件的盖体1003,以及设置在阀体1001的与壁接触的一侧的盖1003,用于将t的至少一部分按压 他突出到阀体上并确定其位置。
    • 39. 发明申请
    • Plasma processing apparatus and plasma processing method
    • 等离子体处理装置和等离子体处理方法
    • US20060027324A1
    • 2006-02-09
    • US11068805
    • 2005-03-02
    • Akitaka MakinoKoichi MishimaTakashi KanekoToyoharu Okumoto
    • Akitaka MakinoKoichi MishimaTakashi KanekoToyoharu Okumoto
    • H01L21/306G01L21/30
    • H01L21/67253G01N21/68H01J37/32935H01J37/32972
    • The present invention provides a plasma processing apparatus that can accomplish fine and precise processing of a sample over a wide area of the surface thereof. A plasma processing apparatus 100 has a processing chamber 101, a sample stage 102 that is supplied with different amounts of coolants at the middle part and the circumference part thereof, and a shower plate 109 that is supplied with different amounts of gases at the middle part and the circumference part thereof. The plasma processing apparatus 100 further has a light-receiving section 125 that receives plasma light emission in the processing chamber 101, a light emission spectrometer 124, a mass spectrometer 129 that analyzes the mass of a gas in a lower space of the processing chamber and a control device 130 and controls flow controllers 120, 121 for controlling the flow rates of the gases supplied into the processing chamber and a coolant flow controller 131 for controlling the flow rates of the coolants supplied to the sample stage 102 using both the data about the light emission analysis and the mass analysis.
    • 本发明提供一种等离子体处理装置,其能够在其表面的广泛区域上实现样品的精细和精确的处理。 等离子体处理装置100具有处理室101,在其中间部分和周围部分处供应不同量的冷却剂的样品台102和在中间部分供应不同量的气体的喷淋板109 及其圆周部分。 等离子体处理装置100还具有接收处理室101内的等离子体发光的光接收部125,发光光谱仪124,分析处理室下部空间的气体质量的质谱仪129和 控制装置130,并且控制流量控制器120,121,用于控制供应到处理室中的气体的流量;以及冷却剂流量控制器131,用于控制供应给样品台102的冷却剂的流量, 光散射分析和质量分析。