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31. 发明授权

US06182171B2 Information communication system and method applicable to in-vehicle networking architecture 失效
标题翻译：适用于车载网络架构的信息通信系统和方法
公开(公告)号：US06182171B2
公开(公告)日：2001-01-30
申请号：US09092055
申请日：1998-06-05
申请人： Takeshi Akatsuka , Masayuki Takada , Takashi Ueno , Ricardo Wong
发明人： Takeshi Akatsuka , Masayuki Takada , Takashi Ueno , Ricardo Wong
IPC分类号： G06F1300
CPC分类号： H04L12/40032 , H04L12/403 , H04L2012/40273
摘要： In information communication system and method applicable to an in-vehicle networking architecture, at least one first electronic equipment which is enabled to serve another electronic equipment with its function and at least one second electronic equipment which is enabled to make use of a function which another electronic equipment serves are connected to a common communication bus (network). An equipment managing apparatus connected to the common communication bus stores a function serving information representing the function that the first electronic equipment can serve and a making-use-of function information representing the function of which the second electronic equipment can make use. If both contents of the function serving information and the making-use-of function information are coincident with each other, the second electronic equipment makes use of the function of the first electronic equipment.
摘要翻译：在可应用于车载网络架构的信息通信系统和方法中，至少一个第一电子设备能够服务具有其功能的另一电子设备和至少一个第二电子设备，其能够利用另一个功能电子设备服务连接到公共通信总线（网络）。连接到公共通信总线的设备管理装置存储表示第一电子设备可以服务的功能的功能服务信息和表示第二电子设备可以使用的功能的功能信息的使用。如果功能服务信息的内容和功能信息的使用功能彼此一致，则第二电子设备利用第一电子设备的功能。

32. 发明授权

US5308789A Method of preparing diffused silicon device substrate 失效
标题翻译：制备扩散硅器件衬底的方法
公开(公告)号：US5308789A
公开(公告)日：1994-05-03
申请号：US124790
申请日：1993-09-22
申请人： Yasushi Yoshimura , Takeshi Akatsuka , Junichi Okada
发明人： Yasushi Yoshimura , Takeshi Akatsuka , Junichi Okada
IPC分类号： H01L21/22 , H01L21/225 , H01L21/322 , H01L29/78 , H01L21/324
CPC分类号： H01L21/2252 , H01L21/3225 , Y10S148/126 , Y10S438/909 , Y10S438/92 , Y10S438/934
摘要： In a method of preparing a diffused silicon device substrate for use in the fabrication of a MOS power device, a drive-in diffusion step is followed by a thermal donor formation heat treatment which is achieved by heating the silicon device substrate at a temperature from 400.degree. to 500.degree. C. for 1 to 20 hours and in a gas atmosphere containing oxygen gas, and subsequently a thermal donor formation retarding heat treatment is performed by heating the silicon device substrate at a temperature of from 600.degree. to 700.degree. C. for 8 to 24 hours in a gas atmosphere containing oxygen gas.
摘要翻译：在制备用于制造MOS功率器件的扩散硅器件衬底的方法中，驱动扩散步骤之后是热施主形成热处理，其通过在400℃的温度下加热硅器件衬底而实现在500℃〜100℃下，在含有氧气的气氛中，通过在600℃〜700℃的温度下加热硅器件基板，进行热供体形成延迟热处理，在含有氧气的气体气氛中8至24小时。

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