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    • 34. 发明授权
    • Method of manufacturing oxide superconductor containing Ag and having
substantially same crystal orientation
    • 制造含有Ag并具有基本相同的晶体取向的氧化物超导体的方法
    • US6103670A
    • 2000-08-15
    • US292825
    • 1999-04-16
    • Shuichi KohayashiShuetsu HaseyamaShuji YoshizawaShigeo Nagaya
    • Shuichi KohayashiShuetsu HaseyamaShuji YoshizawaShigeo Nagaya
    • C01G1/00C01G3/00C04B35/45C04B35/653C30B9/00C30B29/22H01L39/12H01L39/24
    • C30B9/00C04B35/4504C04B35/653C30B29/225H01L39/126H01L39/2419Y10S505/729Y10S505/779
    • An oxide superconductor which has high mechanical strength and exhibits favorable magnetic properties and high resistance to environment. Further, a method of manufacturing this oxide superconductor, namely, a method of manufacturing a RE--Ba--Cu--O oxide superconductor (RE is one or more kinds of rare earth elements including Y) by performing a treatment, which includes at least a burning process to be performed in a range of temperatures that are higher than the melting point of a raw material mixture containing a RE-compound raw material, a Ba-compound raw material and a Cu-compound raw material, on the aforesaid raw material mixture. This method further comprises the addition step of adding 1 to 30 in percent by weight (wt %) of Ag to the raw material mixture, and the crystallization step of melting the raw material mixture, to which Ag is added, at a temperature that is not lower than a temperature at which the raw material mixture is decomposed and fused into the RE.sub.2 BaCuO.sub.5 phase and a liquid layer, and then lowering the temperature of the aforesaid raw material mixture to a temperature close to a temperature, at which a REBa.sub.2 Cu.sub.3 O.sub.7-X phase crystallizes, and subsequently bringing a seed crystal, which meets the following condition: (the temperature at which the REBa.sub.2 Cu.sub.3 O.sub.7-X phase of the seed crystal)>(the temperature at which the REBa.sub.2 Cu.sub.3 O.sub.7-X phase of the aforesaid raw material to which Ag is added), into contact with the aforesaid raw material mixture and then performing crystallization by using this seed crystal as a starting point.
    • 具有高机械强度并具有良好的磁性能和高耐环境性的氧化物超导体。 此外,通过进行处理,制造该氧化物超导体的方法即RE-Ba-Cu-O氧化物超导体(RE是包括Y的一种或多种稀土元素)的制造方法,该方法至少包括 在比上述原料混合物含有RE复合原料,Ba化合物原料和Cu化合物原料的原料混合物的熔点高的温度范围内进行烧成工序 。 该方法还包括向原料混合物中添加1〜30重量%(wt%)Ag的添加工序,在该温度下,将添加有Ag的原料混合物熔融的结晶工序 不低于原料混合物分解并熔融到RE2BaCuO5相中的温度和液体层,然后将上述原料混合物的温度降低到接近REBa2Cu3O7-X相的温度的温度 结晶并随后引入晶种,其满足以下条件:(晶种的REBa2Cu3O7-X相的温度)>(Ag的前述原料的REBa2Cu3O7-X相的温度为 添加)与上述原料混合物接触,然后以该晶种为起点进行结晶。
    • 35. 发明授权
    • Chemical vapor deposition reactor and method of producing oxide
superconductive conductor using the same
    • 化学气相沉积反应器及使用其制造氧化物超导导体的方法
    • US5908507A
    • 1999-06-01
    • US889178
    • 1997-07-07
    • Kazunori OnabeNobuyuki SadakataTakashi SaitoOsamu KohnoTaichi YamaguchiYasuhiro IijimaShigeo NagayaNaoki Hirano
    • Kazunori OnabeNobuyuki SadakataTakashi SaitoOsamu KohnoTaichi YamaguchiYasuhiro IijimaShigeo NagayaNaoki Hirano
    • C30B25/08C23C16/40C23C16/44C23C16/455C23C16/54C30B25/14H01B13/00H01L39/24C23C16/00
    • C23C16/45563C23C16/408C23C16/4412C23C16/455C23C16/45561C23C16/545H01L39/2441Y02T50/67
    • A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.
    • 公开了一种用于在基材表面形成膜的化学气相沉积(CVD)反应器和使用该CVD反应器的氧化物超导体的制造方法。 CVD反应器设置有处理室,将材料气体供给到处理室中的原料气体供给机构,以及从处理室内部排出气体的排气机构。 处理室由隔板分割成基材导入部,反应室和基材导出部。 在每个隔板中形成有基材输送口,在通过基材导入部,反应室和基材导出部的反应室内部形成有基材输送区域。 原料气体供给机构设有原料气体供给源和气体分散器,与原料气体供给源连接。 排气机构配置有与设置有气体扩散器的一侧相对的基材输送区域的两侧设置有排气孔,并且具有与排气孔连接的气体排气孔。 气体扩散器和排气孔之间的基体输送区域彼此相对。 CVD反应器可用于通过在基材表面形成超导层,同时调节基体材料周围的气体流动来生产氧化物超导导体。