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    • 31. 发明授权
    • Optical semiconductor integrated circuit device and manufacturing method for the same
    • 光半导体集成电路器件及其制造方法相同
    • US06692982B2
    • 2004-02-17
    • US10355220
    • 2003-01-31
    • Tsuyoshi TakahashiToshiyuki Okoda
    • Tsuyoshi TakahashiToshiyuki Okoda
    • H01L2100
    • H01L29/66272H01L27/0664H01L27/1443H01L31/105
    • In an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present invention eliminates difficulty in performance improvement of the two elements. In an illustrative optical semiconductor integrated circuit device, a vertical pnp transistor and a photodiode have been formed, and first and second epitaxial layers and are stacked without doping. This enables a depletion layer forming region to be remarkably increased in the photodiode, and high-speed response becomes possible. Additionally, in the vertical pnp transistor, an n+ type diffusion region surrounds the transistor forming region. This can remarkably improve voltage endurance of the vertical pnp transistor 21.
    • 在其中形成有垂直pnp晶体管和光电二极管的光学半导体集成电路器件中,本发明的优选实施例消除了两个元件的性能改进的困难。 在说明性的光学半导体集成电路器件中,已经形成了垂直pnp晶体管和光电二极管,以及第一和第二外延层,并且不掺杂地堆叠。 这使得光电二极管中的耗尽层形成区域显着增加,并且可以实现高速响应。 此外,在垂直pnp晶体管中,n +型扩散区围绕晶体管形成区域。 这可以显着提高垂直pnp晶体管21的耐压。
    • 33. 发明授权
    • Field effect transistor with suppressed threshold change
    • 具有抑制阈值变化的场效应晶体管
    • US06417519B1
    • 2002-07-09
    • US09565486
    • 2000-05-05
    • Kenji ImanishiTsuyoshi Takahashi
    • Kenji ImanishiTsuyoshi Takahashi
    • H01L2912
    • H01L29/66462H01L29/201H01L29/7783
    • A carrier transit layer made of group III-V compound semiconductor is formed on a semiconductor substrate. A carrier supply layer is formed on the carrier transit layer. The carrier supply layer supplies carriers for generating two-dimensional carrier gas in an interface between the carrier supply layer and carrier transit layer. The carrier supply layer is made of group III-V compound semiconductor which contains In as group III element. A gate electrode is disposed above a partial area of the carrier supply layer. An intermediate layer is disposed between the gate electrode and carrier supply layer. The intermediate layer is made of group III-V compound semiconductor not containing In as group III element. An ohmic electrode is disposed on both sides of the gate electrode.
    • 在半导体衬底上形成由III-V族化合物半导体制成的载流子迁移层。 载体供给层形成在载体运送层上。 载体供给层在载体供给层和载体运送层之间的界面中提供用于产生二维载气的载体。 载体供给层由含有In作为III族元素的III-V族化合物半导体制成。 栅电极设置在载体供给层的部分区域的上方。 中间层设置在栅电极和载体供给层之间。 中间层由不含In作为III族元素的III-V族化合物半导体制成。 欧姆电极设置在栅电极的两侧。
    • 40. 发明授权
    • Fuel cell and fuel cell separator
    • 燃料电池和燃料电池分离器
    • US08557448B2
    • 2013-10-15
    • US11667876
    • 2006-01-12
    • Yoshinori YamamotoYuichi YagamiJiro AizakiJunichi ShirahamaSogo GotoTsuyoshi TakahashiTomokazu Hayashi
    • Yoshinori YamamotoYuichi YagamiJiro AizakiJunichi ShirahamaSogo GotoTsuyoshi TakahashiTomokazu Hayashi
    • H01M8/00H01M8/04H01M8/06H01M2/40
    • H01M8/0265H01M8/0206H01M8/0228H01M8/0247H01M8/0254H01M8/0258H01M8/0267H01M8/04029H01M8/241H01M8/2457H01M8/2483
    • The fuel cell of the invention includes an electrolyte assembly, and a separator having one face as a gas flow path-forming face with a gas flow path formed thereon to allow flow of a reactive gas and the other face, which is reverse to the one face, as a refrigerant flow path-forming face with a refrigerant flow path formed thereon to allow flow of a refrigerant. The gas flow path-forming face of the separator has multiple linear gas flow paths that are arranged in parallel to one another, and a gas flow path connection structure that divides the multiple linear gas flow paths into plural linear gas flow path groups and connects at least part of the plural linear gas flow path groups in series. The refrigerant flow path-forming face has multiple linear refrigerant flow paths that are formed as a reverse structure of the multiple linear gas flow paths on the gas flow path-forming face, and a refrigerant flow path connection structure that is formed as a reverse structure of the gas flow path connection structure on the gas flow path-forming face to connect the multiple linear refrigerant flow paths in parallel.
    • 本发明的燃料电池包括一个电解液组件和一个隔板,一个表面作为一个气流通道形成面,在其上形成一个气流通道,以允许一个反应气体和另一个面相反流动 作为制冷剂流路形成面,其上形成有制冷剂流路,以允许制冷剂流动。 分离器的气体流路形成面具有彼此平行布置的多个线性气体流动路径,以及气体流路连接结构,其将多个线性气体流动路径分成多个线性气体流动路径组并连接在 多个线性气体流路组的至少一部分串联。 制冷剂流路形成面具有形成为气体流路形成面上的多个线性气体流路的相反结构的多个线性制冷剂流路和形成为反向结构的制冷剂流路连接结构 的气体流路连接结构在气体流路形成面上并联连接多个线性制冷剂流路。