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31. 发明授权

US5811153A Coating solutions for use in forming bismuth-based dielectric thin films, and dielectric thin films and memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基电介质薄膜的涂布溶液以及与所述涂布溶液形成的介电薄膜和记忆体以及其制备方法
公开(公告)号：US5811153A
公开(公告)日：1998-09-22
申请号：US837478
申请日：1997-04-18
申请人： Akira Hashimoto , Yoshihiro Sawada , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Takao Kanehara
发明人： Akira Hashimoto , Yoshihiro Sawada , Tetsuya Osaka , Ichiro Koiwa , Juro Mita , Takao Kanehara
IPC分类号： C01G29/00 , C01G33/00 , C01G35/00 , C04B35/622 , C09D1/00 , C23C18/12 , H01B3/00 , H01L21/314 , H01L21/316 , B05D5/12 , B05D3/02
CPC分类号： H01L21/31691 , C04B35/62222 , C23C18/04 , C23C18/1216
摘要： Alkoxymetals, .beta.-diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, .beta.-diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.
摘要翻译：作为与Bi独立对应的金属化合物的金属氧化物，β-二酮或金属乙酸酯，金属元素A（其为Ca，Ba，Sr，Pb和Bi的至少一种成分）和金属元素B（其为与Ti，Nb和Ta组成的组中的至少一个成员与醇，羧酸酐，二醇，β-二酮或二羧酸单酯反应，以制备用于包含在用于形成Bi基电介质薄膜的涂料溶液中的化合物。涂层溶液用于生产介电薄膜或记忆体。

32. 发明授权

US5294560A Bidirectional nonlinear resistor, active matrix liquid crystal panel using bidirectional nonlinear resistor, and method for production thereof 失效
标题翻译：双向非线性电阻器，使用双向非线性电阻的有源矩阵液晶面板及其制造方法
公开(公告)号：US5294560A
公开(公告)日：1994-03-15
申请号：US674855
申请日：1991-03-26
申请人： Yoshihiro Ono , Fumiaki Matsushima , Kuniyasu Matsui , Tetsuya Osaka
发明人： Yoshihiro Ono , Fumiaki Matsushima , Kuniyasu Matsui , Tetsuya Osaka
IPC分类号： C09D5/44 , G02F1/1365 , H01C7/10 , H01L45/00 , H01L21/47
CPC分类号： H01C7/10 , C09D5/4476 , G02F1/1365 , H01L45/00 , Y10S148/136 , Y10S438/957 , Y10T29/413
摘要： A bidirectional nonlinear resistor for use as a nonlinear active element having a highly insulating organic film formed on a first conductor by polymerizing in an electrolytic solution containing a supporting electrolyte and a soluble organic compound, and a second conductor identical or not identical in kind with the first conductor formed on the organic film is provided. An active matrix substrate including a plurality of the bidirectional nonlinear resistor elements may be used to have a liquid crystal display panel. In a preferred embodiment, the electrolytic solution includes an alkali hydroxide as a supporting electrolyte so that dopant need not be removed after formation of the film. The electrolytic solution which is electrolytically polymerized to form the insulating organic film includes a monomer, preferably pyrrole, pyrrole derivatives, phenol or phenol derivatives, dissolved in an electrolytic solution.
摘要翻译：一种用作非线性有源元件的双向非线性电阻器，其具有通过在包含支持电解质和可溶性有机化合物的电解液中聚合而形成在第一导体上的高度绝缘的有机膜，以及与第一导体相同或不相同的第二导体提供了形成在有机膜上的第一导体。包括多个双向非线性电阻元件的有源矩阵基板可以用于具有液晶显示面板。在优选的实施方案中，电解溶液包括碱性氢氧化物作为支持电解质，使得在形成膜之后不需要除去掺杂剂。电解聚合以形成绝缘有机膜的电解液包括溶解在电解液中的单体，优选吡咯，吡咯衍生物，苯酚或酚衍生物。

33. 发明授权

US08900524B2 Optical sensor 有权
标题翻译：光学传感器
公开(公告)号：US08900524B2
公开(公告)日：2014-12-02
申请号：US12934237
申请日：2009-03-17
申请人： Masahiro Yanagisawa , Takuya Nakanishi , Naonobu Shimamoto , Mikiko Saito , Tetsuya Osaka
发明人： Masahiro Yanagisawa , Takuya Nakanishi , Naonobu Shimamoto , Mikiko Saito , Tetsuya Osaka
IPC分类号： G01N33/543 , G01N21/55 , G01N21/65
CPC分类号： G01N21/554 , G01N21/658
摘要： There is provided a novel optical sensor utilizing a surface plasmon resonance technique which is capable of detecting a substance to be detected with high sensitivity independently of a wavelength of irradiated light and is capable of obtaining information, other than a refraction index, on the substance to be detected. At the center of a surface of a metallic film 2 which is formed on a substrate and has no aperture, a circular depression 4 with a diameter of 0.1 to 250 nm is formed and with the depression 4 defined as a center, a plurality of depressions 3 are concentrically formed at intervals of 450 to 530 nm.
摘要翻译：提供了一种利用表面等离子体共振技术的新型光学传感器，其能够独立于照射光的波长检测高灵敏度的物质，并且能够获得物质以外的折射指数以外的信息被检测。在形成在基板上并且没有孔的金属膜2的表面的中心处，形成直径为0.1〜250nm的圆形凹部4，将凹部4定义为中心，形成多个凹部 3以450-530nm的间隔同心地形成。

34. 发明申请

US20110195277A1 HIGH DENSITY MAGNETIC RECORDING MEDIUM AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：高密度磁记录介质及其制造方法
公开(公告)号：US20110195277A1
公开(公告)日：2011-08-11
申请号：US12967508
申请日：2010-12-14
申请人： Tetsuya Osaka , Atsushi Sugiyama , Takuma Hachisu , Shuichi Shoji , Jun Mizuno , Hiroshi Sakai
发明人： Tetsuya Osaka , Atsushi Sugiyama , Takuma Hachisu , Shuichi Shoji , Jun Mizuno , Hiroshi Sakai
IPC分类号： G11B5/706 , G11B5/842 , B05D3/00 , B05D5/00
CPC分类号： G11B5/855
摘要： A high density magnetic recording medium including aggregates of magnetic nanoparticles arranged stably and efficiently in demarcated sections in the surface of a substrate is manufactured by the steps of forming a plurality of parallel tracks in the surface of the substrate, forming a plurality of minute recesses serially at approximately equal intervals in each of the tracks, casting a liquid dispersion of magnetic nanoparticles into the minute recesses, and evaporating dispersing medium from the liquid dispersion, thereby forming an aggregate of magnetic nanoparticles in each of the minute recesses.
摘要翻译：通过在衬底的表面中形成多个平行轨道的步骤，制造包括在衬底表面中的分隔部分中稳定且有效地布置的磁性纳米颗粒聚集体的高密度磁记录介质，从而形成多个微小凹槽在每个轨道中以大致相等的间隔，将磁性纳米颗粒的液体分散体注入到微小凹部中，并从分散体蒸发分散介质，从而在每个微小凹部中形成磁性纳米颗粒的聚集体。

35. 发明授权

US07838912B2 Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device 有权
标题翻译：半导体感测场效应晶体管，半导体感测器件，半导体传感器芯片和半导体感测器件
公开(公告)号：US07838912B2
公开(公告)日：2010-11-23
申请号：US11660514
申请日：2005-03-11
申请人： Daisuke Niwa , Ichiro Koiwa , Tetsuya Osaka
发明人： Daisuke Niwa , Ichiro Koiwa , Tetsuya Osaka
IPC分类号： C12Q1/00
CPC分类号： G01N27/414
摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.
摘要翻译：半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及漏极端子布线与漏电极连接。在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

36. 发明申请

US20080079154A1 Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof 失效
标题翻译：层压结构，超大规模集成电路布线板及其形成方法
公开(公告)号：US20080079154A1
公开(公告)日：2008-04-03
申请号：US11529535
申请日：2006-09-29
申请人： Tetsuya Osaka , Masahiro Yoshino
发明人： Tetsuya Osaka , Masahiro Yoshino
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , C23C18/1651 , C23C18/1893 , H01L21/288 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76874 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier layer is interposed between the substrate and the copper layer, and the barrier layer is formed by electroless plating. And the laminated structure is characterized in that the barrier layer is formed on the substrate with a monomolecular layer of organosilane compound and a palladium catalyst which are interposed between the substrate and the barrier layer, the palladium catalyst modifies the terminal, adjacent to the barrier layer, of the monomolecular layer, and the barrier layer includes an electroless NiB plating layer which is disposed on the substrate side, and a electroless CoWP plating layer.The present invention makes it possible to coat the low dielectric constant material of silicon compound in a simple all-wet process with a firmly adhering barrier layer and an electroless copper plating layer as the wiring layer. the advantage of requiring. Thus, the laminated structure formed in this way includes a substrate of low dielectric constant material of silicon compound, a barrier layer, and a copper layer as the wiring layer formed by electroless plating, which firmly adhere to one another. In addition, the laminated structure is suitable for the copper wiring in a ULSI, particularly the one which is to be formed in a narrower trench than conventional one.
摘要翻译：层叠结构包括硅化合物的低介电常数材料的基板和层压有阻挡层的化学镀铜层。阻挡层插入在基板和铜层之间，通过无电镀形成阻挡层。层叠结构的特征在于，在基板上形成有分隔层的有机硅烷化合物和钯催化剂插入在基板和阻挡层之间的阻挡层，钯催化剂改变与阻挡层相邻的端子的阻挡层，并且阻挡层包括设置在基板侧的无电解NiB镀层和无电CoWP镀层。本发明使得可以以简单的全湿法将具有牢固粘合的阻挡层和化学镀铜层的硅化合物的低介电常数材料涂布作为布线层。要求的优点。因此，以这种方式形成的层叠结构包括硅化合物的低介电常数材料的衬底，阻挡层和作为通过无电镀形成的布线层的铜层，其彼此牢固地粘合。此外，该层压结构适用于ULSI中的铜布线，特别是在比常规的窄沟槽形成的布线中。

37. 发明授权

US06337007B1 Method of making a Co-Fe-Ni soft magnetic thin film 失效
标题翻译：制备Co-Fe-Ni软磁薄膜的方法
公开(公告)号：US06337007B1
公开(公告)日：2002-01-08
申请号：US09488041
申请日：2000-01-19
申请人： Tetsuya Osaka
发明人： Tetsuya Osaka
IPC分类号： C25D356
CPC分类号： C25D3/562 , H01F41/26
摘要： A soft magnetic thin film in the form of a Co—Fe—Ni—C thin film consisting essentially of 40-70% by weight of cobalt, 20-40% by weight of iron, 5-20% by weight of nickel, and 0.02-0.1% by weight of carbon has a high saturation magnetic flux density, excellent soft magnetic properties, and a high electric resistivity.
摘要翻译：基本上由40-70重量％的钴，20-40重量％的铁，5-20重量％的镍组成的Co-Fe-Ni-C薄膜形式的软磁性薄膜和 0.02-0.1重量％的碳具有高饱和磁通密度，优良的软磁特性和高电阻率。

38. 发明授权

US06120918A Co-Fe-Ni thin magnetic film, process for producing the same, composite thin film magnetic head, and magnetic recording device 失效
标题翻译： Co-Fe-Ni薄磁膜，其制造方法，复合薄膜磁头和磁记录装置
公开(公告)号：US06120918A
公开(公告)日：2000-09-19
申请号：US108252
申请日：1998-07-01
申请人： Tetsuya Osaka , Mikiko Saito , Kazuhiko Yamada , Keishi Ohashi , Yoshihiko Yasue
发明人： Tetsuya Osaka , Mikiko Saito , Kazuhiko Yamada , Keishi Ohashi , Yoshihiko Yasue
IPC分类号： G11B5/31 , G11B5/00 , G11B5/127 , G11B5/265 , G11B5/39 , H01F10/16 , H01F41/26 , G11B5/66
CPC分类号： G11B5/3967 , G11B5/00 , H01F10/16 , G11B2005/0005 , G11B5/3109 , G11B5/3113 , Y10S428/90 , Y10T428/115
摘要： A thin Co--Fe--Ni magnetic film comprising from 40% to 70% by weight of cobalt, from 20% to 40% by weight of iron, and from 10% to 20% of nickel, and having a crystal structure of a mixed crystal with an .alpha. phase of a body-centered cubic structure and a .gamma. phase of a face-centered cubic structure.
摘要翻译：一种薄Co-Fe-Ni磁性膜，其包含40重量％至70重量％的钴，20重量％至40重量％的铁和10至20重量％的镍，并且具有混合的晶体结构具有体心立方结构的α相和面心立方结构的γ相的晶体。

39. 发明申请

US20110051142A1 OPTICAL SENSOR 有权
标题翻译：光传感器
公开(公告)号：US20110051142A1
公开(公告)日：2011-03-03
申请号：US12934237
申请日：2009-03-17
申请人： Masahiro Yanagisawa , Takuya Nakanishi , Naonobu Shimamoto , Mikiko Saito , Tetsuya Osaka
发明人： Masahiro Yanagisawa , Takuya Nakanishi , Naonobu Shimamoto , Mikiko Saito , Tetsuya Osaka
IPC分类号： G01N21/55
CPC分类号： G01N21/554 , G01N21/658
摘要： There is provided a novel optical sensor utilizing a surface plasmon resonance technique which is capable of detecting a substance to be detected with high sensitivity independently of a wavelength of irradiated light and is capable of obtaining information, other than a refraction index, on the substance to be detected. At the center of a surface of a metallic film 2 which is formed on a substrate and has no aperture, a circular depression 4 with a diameter of 0.1 to 250 nm is formed and with the depression 4 defined as a center, a plurality of depressions 3 are concentrically formed at intervals of 450 to 530 nm.
摘要翻译：提供了一种利用表面等离子体共振技术的新型光学传感器，其能够独立于照射光的波长检测高灵敏度的物质，并且能够获得物质以外的折射指数以外的信息被检测。在形成在基板上并且没有孔的金属膜2的表面的中心处，形成直径为0.1〜250nm的圆形凹部4，将凹部4定义为中心，形成多个凹部 3以450-530nm的间隔同心地形成。

40. 发明授权

US07816041B2 Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：US07816041B2
公开(公告)日：2010-10-19
申请号：US11515871
申请日：2006-09-06
申请人： Tetsuya Osaka , Toshiyuki Momma , Jong-Eun Park
发明人： Tetsuya Osaka , Toshiyuki Momma , Jong-Eun Park
IPC分类号： H01M8/00
CPC分类号： H01M8/1009 , H01M8/0258 , H01M8/026 , H01M8/04186 , H01M8/1011 , H01M2008/1095 , Y02E60/523
摘要： A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.
摘要翻译：燃料电池包括具有一对槽的基板，位于基板上的电解质膜，以限定一对流动通道，以及设置在槽或内表面的内壁上的催化剂负载集流层部分限定通道的电解质膜。燃料液体流过第一通道进行阳极反应，过氧化氢水溶液形式的氧化剂液体流过第二通道进行阴极反应，氢离子穿过电解质膜。

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