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31. 发明申请

US20110248253A1 ORGANIC ELECTROLUMINESCENCE ELEMENT 有权
标题翻译：有机电致发光元件
公开(公告)号：US20110248253A1
公开(公告)日：2011-10-13
申请号：US13140593
申请日：2009-12-18
申请人： Masahito Yamana , Masahiro Nakamura
发明人： Masahito Yamana , Masahiro Nakamura
IPC分类号： H01L51/52
CPC分类号： H01L51/5268 , H01L51/5262 , H01L51/5271 , H01L2251/558
摘要： The electroluminescence element comprises the light-reflective-electrode separated from the luminous point by distance “d” satisfying the following formula. nd = a × λ 4  { 2  m + φ π }   wherein   φ = tan - 1  { 2  ( n 1  k 2 - n 2  k 1 ) n 1 2 - n 2 2 + k 1 2 - k 2 2 } λ is a wavelength of the light from the light emission layer. N is a refractive index of a certain layer between the luminous point and the light-reflective-electrode at λ. n1 and k1 is a refractive index and the extinction coefficient of the certain layer at λ. n2 and k2 is a refractive index and the extinction coefficient of the light-reflective-electrode at λ. m is 0 or 1. When “m” is 0, “a” satisfies the following formula. −1.17×norg/nEML+1.94≦a≦−0.16×norg/nEML+2.33 When “m” is 1, “a” satisfies the following formula. 0.28×norg/nEML+0.75≦a≦2.85×norg/nEML−1.23 norg is a refractive index of a predetermined layer in contact with the light emission layer to be located on the same side as the light-reflective-electrode at λ. nEML is a refractive index of the light emission layer at λ.
摘要翻译：电致发光元件包括从发光点离开距离“d”的光反射电极，满足下式。 nd = a×λ4（2）m +＆phgr; ＆pgr 其中 = tan-1（2）（n 1 k 2 - n 2 k 1）n 1 2 - n 2 2 + k 1 2 - k 2 2}λ是来自发光层的光的波长。 N是λ处的发光点和光反射电极之间的某一层的折射率。 n1和k1是λ处的某一层的折射率和消光系数。 n2和k2是λ的折射率和光反射电极的消光系数。 m为0或1.当“m”为0时，“a”满足下式。 -1.17×norg / nEML + 1.94＆nlE; a＆nlE; -0.16×norg / nEML + 2.33当“m”为1时，“a”满足下列公式。 0.28×norg / nEML + 0.75＆nlE; a＆nlE; 2.85×norg / nEML-1.23 norg是与λ反射电极位于同一侧的发光层接触的预定层的折射率。 nEML是λ处的发光层的折射率。

32. 发明授权

US09482200B2 Starter 有权
标题翻译：起动机
公开(公告)号：US09482200B2
公开(公告)日：2016-11-01
申请号：US14388055
申请日：2012-03-30
申请人： Tomohiko Ikemori , Hiroshi Ooka , Masaaki Oya , Masataka Odagiri , Shigehiro Kanbe , Hiroki Yamada , Seiji Shimada , Yusuke Fukada , Takayuki Yamagata , Masahiro Nakamura
发明人： Tomohiko Ikemori , Hiroshi Ooka , Masaaki Oya , Masataka Odagiri , Shigehiro Kanbe , Hiroki Yamada , Seiji Shimada , Yusuke Fukada , Takayuki Yamagata , Masahiro Nakamura
IPC分类号： F02N15/02 , F02N11/00 , F02N15/06 , F02N15/00 , F02N11/08
CPC分类号： F02N15/062 , F02N11/00 , F02N11/0851 , F02N15/00 , F02N15/02
摘要： Formed in a pinion (74) are pinion-side helical external teeth (74A) that mesh with a ring gear 823), and pinion-side helical internal teeth (74a) that mesh with a pinion inner (71). Formed in the pinion inner (71) are pinion inner-side helical external teeth (73) that mesh with the pinion-side helical internal teeth (74a). The configuration is formed so that when the rotational speed of the pinion (74) is slower than that of the ring gear (23), a thrust load is generated in a direction toward the ring gear (23), and when the rotational speed of the pinion (74) is faster than that of the ring gear (23), a thrust load is generated in a direction away from the ring gear (23).
摘要翻译：形成在小齿轮（74）中的是与齿圈823啮合的小齿轮侧螺旋状外齿（74A）和与小齿轮内部（71）啮合的小齿轮侧螺旋状内齿（74a）。在小齿轮内部（71）中形成有与小齿轮侧螺旋内齿（74a）啮合的小齿轮内侧螺旋形外齿（73）。该构造形成为当小齿轮（74）的旋转速度比环形齿轮（23）的转速慢时，在朝向齿圈（23）的方向上产生推力载荷，小齿轮（74）比环形齿轮（23）的速度更快，所以在远离齿圈（23）的方向产生推力负载。

33. 发明授权

US09190316B2 Low energy etch process for nitrogen-containing dielectric layer 有权
标题翻译：含氮介电层的低能蚀刻工艺
公开(公告)号：US09190316B2
公开(公告)日：2015-11-17
申请号：US13281732
申请日：2011-10-26
申请人： Markus Brink , Robert L. Bruce , Sebastian U. Engelmann , Nicholas C. M. Fuller , Hiroyuki Miyazoe , Masahiro Nakamura
发明人： Markus Brink , Robert L. Bruce , Sebastian U. Engelmann , Nicholas C. M. Fuller , Hiroyuki Miyazoe , Masahiro Nakamura
IPC分类号： H01L21/00 , H01L21/768 , H01L21/311 , H01L21/321
CPC分类号： H01L23/53295 , H01L21/31116 , H01L21/31144 , H01L21/3212 , H01L21/76802 , H01L21/76813 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： A stack that includes, from bottom to top, a nitrogen-containing dielectric layer, an interconnect level dielectric material layer, and a hard mask layer is formed on a substrate. The hard mask layer and the interconnect level dielectric material layer are patterned by an etch. Employing the patterned hard mask layer as an etch mask, the nitrogen-containing dielectric layer is patterned by a break-through anisotropic etch, which employs a fluorohydrocarbon-containing plasma to break through the nitrogen-containing dielectric layer. Fluorohydrocarbon gases used to generate the fluorohydrocarbon-containing plasma generate a carbon-rich polymer residue, which interact with the nitrogen-containing dielectric layer to form volatile compounds. Plasma energy can be decreased below 100 eV to reduce damage to physically exposed surfaces of the interconnect level dielectric material layer.
摘要翻译：在基板上形成从底部到顶部包括含氮介电层，互连层介电材料层和硬掩模层的堆叠。通过蚀刻对硬掩模层和互连层电介质材料层进行图案化。使用图案化的硬掩模层作为蚀刻掩模，通过使用含氟烃的等离子体穿过含氮介电层的穿透各向异性蚀刻来对含氮介电层进行图案化。用于产生含氟烃的等离子体的氟烃气体产生富含碳的聚合物残余物，其与含氮介电层相互作用以形成挥发性化合物。等离子体能量可以降低到低于100eV，以减少互连层介电材料层的物理暴露表面的损伤。

34. 发明授权

US09039857B2 Sheet pasting method and sheet pasting tool 有权
标题翻译：纸张粘贴方法和纸张粘贴工具
公开(公告)号：US09039857B2
公开(公告)日：2015-05-26
申请号：US14122524
申请日：2012-07-26
申请人： Masahiro Nakamura
发明人： Masahiro Nakamura
IPC分类号： B29C65/48 , B32B37/26 , B32B37/00 , B60B7/06 , B65B15/00 , B60B7/00
CPC分类号： B32B37/025 , B60B7/00 , B60B7/0073 , B60B7/06 , B60B7/061 , B60B7/065 , B60B2310/661 , B60B2900/212 , B60B2900/5112 , B65B15/00 , Y10T156/1044 , Y10T156/1049 , Y10T156/1051 , Y10T156/1089 , Y10T156/1093 , Y10T156/1705
摘要： An adherend surface of an adherend is stuck with a protection sheet being in substantially the same shape as the adherend surface and including base and adhesive layer by a method including: sticking the sheet on a first surface of a sticking tool foldable along a symmetry-axis position of the sheet; folding the tool with the sheet such that a second surface opposite to the first surface comes inside; peeling the sheet to a folded portion of the tool to expose a portion of the adhesive layer with the tool folded; pressing the exposed portion of the adhesive layer against the adherend surface to stick a portion of the sheet on the adherend; and moving the tool along the adherend surface to expose a remaining portion of the adhesive layer and pressing the remaining portion against the adherend surface to stick a remaining portion of the sheet on the adherend.
摘要翻译：被粘物的被粘物表面粘贴有与被粘物表面基本相同的形状的保护片，并且包括基底和粘合剂层的方法包括：将片材粘贴在沿着对称轴可折叠的粘贴工具的第一表面上纸张的位置; 用所述片材折叠所述工具使得与所述第一表面相对的第二表面进入内部; 将所述片材剥离到所述工具的折叠部分，以使所述工具折叠以暴露所述粘合剂层的一部分; 将粘合剂层的暴露部分压靠在被粘物表面上，将片材的一部分粘贴在被粘物上; 沿着被粘物表面移动该工具以暴露粘合剂层的剩余部分并将其余部分压靠在被粘物表面上，将该片材的剩余部分粘贴在被粘物上。

35. 发明授权

US08914579B2 Access device, information recording device, controller, and information recording system 有权
标题翻译：访问设备，信息记录设备，控制器和信息记录系统
公开(公告)号：US08914579B2
公开(公告)日：2014-12-16
申请号：US12867543
申请日：2009-02-27
申请人： Takuji Maeda , Shigekazu Kogita , Shinji Inoue , Hiroki Etoh , Makoto Ochi , Masahiro Nakamura
发明人： Takuji Maeda , Shigekazu Kogita , Shinji Inoue , Hiroki Etoh , Makoto Ochi , Masahiro Nakamura
IPC分类号： G06F12/00 , G06F12/02 , G06F12/08
CPC分类号： G06F12/0246 , G06F12/0866 , G06F12/0888 , G06F2212/1036 , G06F2212/7203
摘要： Provided is a method that, in the case of managing areas of a non-volatile memory of an information recording module by a file system, increases the speed of processing for writing file data and file system management information, and furthermore prevents a decrease in the rewriting lifetime of the non-volatile memory. The information recording module (2) is provided with a page cache control unit (217) that stores page cache information (224) in the non-volatile memory (22) of the information recording module (2) and performs control such that a specific physical block is used as a cache when writing small-sized data. Also, an access module (1) is provided with a page cache information setting unit (104) that sets information necessary for page cache control in the information recording module (2). The combination of the access module (1) and the information recording module (2) prevents the execution of needless saving process with use of page caching when writing small-sized data, thereby increasing the speed of writing processing.
摘要翻译：提供了一种在通过文件系统管理信息记录模块的非易失性存储器的区域的情况下增加用于写入文件数据和文件系统管理信息的处理速度的方法，并且进一步防止重写非易失性存储器的使用寿命。信息记录模块（2）设置有页面缓存控制单元（217），其将页面缓存信息（224）存储在信息记录模块（2）的非易失性存储器（22）中，并执行控制，使得特定当写入小尺寸数据时，物理块用作缓存。此外，访问模块（1）具有在信息记录模块（2）中设置页面缓存控制所需的信息的页面缓存信息设置单元（104）。访问模块（1）和信息记录模块（2）的组合在写小尺寸数据时防止使用页面缓存来执行不必要的保存处理，从而提高写入处理的速度。

36. 发明授权

US08765613B2 High selectivity nitride etch process 有权
标题翻译：高选择性氮化物蚀刻工艺
公开(公告)号：US08765613B2
公开(公告)日：2014-07-01
申请号：US13281688
申请日：2011-10-26
申请人： Josephine B. Chang , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Masahiro Nakamura
发明人： Josephine B. Chang , Sebastian U. Engelmann , Nicholas C. M. Fuller , Michael A. Guillorn , Masahiro Nakamura
IPC分类号： H01L21/302
CPC分类号： H01L29/6653 , H01L21/31116 , H01L21/76802 , H01L21/76897 , H01L29/6656 , H01L29/6659
摘要： An anisotropic silicon nitride etch provides selectivity to silicon and silicon oxide by forming a fluorohydrocarbon-containing polymer on silicon surfaces and silicon oxide surfaces. Selective fluorohydrocarbon deposition is employed to provide selectivity to non-nitride surfaces. The fluorohydrocarbon-containing polymer interacts with silicon nitride to form a volatile compound, thereby enabling etching of silicon nitride. The fluorohydrocarbon-containing polymer interacts with silicon oxide at a low reaction rate, retarding, or completely stopping, the etching of silicon oxide. The fluorohydrocarbon-containing polymer does not interact with silicon, and protects silicon from the plasma. The anisotropic silicon nitride etch can be employed to etch silicon nitride selective to silicon and silicon oxide in any dimension, including small dimensions less than 50 nm.
摘要翻译：各向异性氮化硅蚀刻通过在硅表面和氧化硅表面上形成含氟代烃的聚合物来提供对硅和氧化硅的选择性。使用选择性氟代烃沉积来提供对非氮化物表面的选择性。含氟烃聚合物与氮化硅相互作用以形成挥发性化合物，从而能够蚀刻氮化硅。含氟烃聚合物以低反应速率与氧化硅相互作用，阻止或完全停止氧化硅的蚀刻。含氟烃聚合物不与硅相互作用，并保护硅免受等离子体的影响。可以采用各向异性氮化硅蚀刻来蚀刻任选尺寸的硅和氧化硅的氮化硅，包括小于50nm的小尺寸。

37. 发明授权

US08688896B2 High speed writing mode in memory controller, nonvolatile storage device, accessing device, nonvolatile storage system, and method and program for writing data 有权
标题翻译：存储器控制器，非易失性存储设备，访问设备，非易失性存储系统以及用于写入数据的方法和程序的高速写入模式
公开(公告)号：US08688896B2
公开(公告)日：2014-04-01
申请号：US13058352
申请日：2010-05-13
申请人： Masahiro Nakamura , Hirokazu So , Masahiro Nakanishi
发明人： Masahiro Nakamura , Hirokazu So , Masahiro Nakanishi
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A digital still camera performs temporary high-speed writing when capturing a large number of images in a short time. Lengthy processing for erased block allocation or copying performed inside a nonvolatile storage device may disable the captured images to be written completely (may cause some frames to drop). A nonvolatile storage system includes an access device (1001) and a nonvolatile storage device (1002). A button operation of a user on the access device (1001) causes the mode of data writing to the nonvolatile storage device (1002) to be switched. Temporary high-speed writing is performed into a physical block of a nonvolatile memory (27) from which a plurality of data pieces with different logical addresses and different data sizes have been erased. After the temporary high-speed writing, the written data is relocated into a user storage area (272), and an erased block is newly allocated for subsequent temporary high-speed data writing.
摘要翻译：当在短时间内捕获大量图像时，数字静态照相机执行临时高速写入。在非易失性存储设备内执行的擦除块分配或复制的长时间处理可以禁止捕获的图像被完全写入（可能导致一些帧丢失）。非易失性存储系统包括访问设备（1001）和非易失性存储设备（1002）。访问设备（1001）上的用户的按钮操作使得切换到非易失性存储设备（1002）的数据写入模式。临时高速写入被执行到非易失性存储器（27）的物理块中，具有不同逻辑地址和不同数据大小的多个数据片已经被擦除。在临时高速写入之后，写入的数据被重新定位到用户存储区域（272）中，并且新分配擦除块用于随后的临时高速数据写入。

38. 发明授权

US08650430B2 Enabling a peripheral device to transmit a request for interrupt processing to a host when no clock signal is output from the host device 有权
标题翻译：当主机设备没有输出时钟信号时，允许外围设备向主机发送中断处理请求
公开(公告)号：US08650430B2
公开(公告)日：2014-02-11
申请号：US13180708
申请日：2011-07-12
申请人： Masahiro Nakamura , Tadashi Ono , Isao Kato
发明人： Masahiro Nakamura , Tadashi Ono , Isao Kato
IPC分类号： G06F1/00 , G06F13/24
CPC分类号： G06F13/24 , G06F1/3237 , G06F1/325 , Y02D10/128
摘要： In a communication system in which data is transmitted and received in synchronization with a clock signal, a peripheral device cannot transfer data to a host device when the host device stops outputting the clock signal and thus the peripheral device cannot promptly transmit an interrupt request to the host device. A peripheral device transmits an interrupt request to a host device using a signal line for a clock signal when the clock signal output has been stopped. The host device receives the interrupt request, and resumes outputting a clock signal to enable data transmission and reception to and from the peripheral device. This enables the peripheral device to transmit an interrupt request to the host device promptly when the output of the clock signal from the host device has been stopped.
摘要翻译：在与时钟信号同步地发送和接收数据的通信系统中，当主机设备停止输出时钟信号时，外围设备不能将数据传送到主机设备，因此外围设备不能及时将中断请求发送给主机设备。当时钟信号输出停止时，外围设备使用时钟信号的信号线向主机设备发送中断请求。主机设备接收中断请求，并恢复输出时钟信号，以实现与外围设备的数据传输和接收。这使得当来自主机设备的时钟信号的输出已停止时，外围设备能够迅速向主机发送中断请求。

39. 发明授权

US08589617B2 Write once recording device 有权
标题翻译：写一次录音设备
公开(公告)号：US08589617B2
公开(公告)日：2013-11-19
申请号：US12517844
申请日：2007-12-10
申请人： Takuji Maeda , Shinji Inoue , Hiroki Etoh , Masahiro Nakamura , Makoto Ochi , Yukiko Okamoto , Masahiro Nakanishi
发明人： Takuji Maeda , Shinji Inoue , Hiroki Etoh , Masahiro Nakamura , Makoto Ochi , Yukiko Okamoto , Masahiro Nakanishi
IPC分类号： G06F12/00
CPC分类号： G06F3/0643 , G06F3/0619 , G06F3/0679
摘要： An access device 1 internally includes a logical-physical empty capacity management part 16 for obtaining information of a remaining capacity on a write once memory from a write once recording device 2A. In addition, the write once recording device 2A internally includes a physical empty capacity management part 27 for managing a remaining capacity on the write once memory and notifying the access device of the capacity. Prior to recording of file data, the access device 1 can know an accurate remaining capacity of the write once recording device by: obtaining a remaining capacity of the write once memory from the write once recording device 2A; and comparing the capacity with a remaining capacity on an FAT to decide an actually-recordable remaining capacity for file data.
摘要翻译：访问装置1内部包括逻辑物理空容量管理部分16，用于从一次写入记录装置2A获得一次写入存储器上的剩余容量的信息。此外，一次写入记录装置2A内部包括用于管理一次写入存储器上的剩余容量的物理空容量管理部27，并通知存取装置的容量。在记录文件数据之前，访问装置1可以通过以下方式知道一次写入记录装置的准确剩余容量：从一次写入记录装置2A获得一次写入存储器的剩余容量; 并且将容量与FAT上的剩余容量进行比较，以确定文件数据的实际可记录的剩余容量。

40. 发明授权

US08535551B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US08535551B2
公开(公告)日：2013-09-17
申请号：US12733828
申请日：2008-09-26
申请人： Takefumi Suzuki , Tatsuya Sugimoto , Masahiro Nakamura
发明人： Takefumi Suzuki , Tatsuya Sugimoto , Masahiro Nakamura
IPC分类号： C03C15/00 , H01L21/461
CPC分类号： H01L21/31116
摘要： A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.
摘要翻译：等离子体蚀刻方法包括使用工艺气体通过掩模等离子体蚀刻氧化硅层，含有氧气的工艺气体和由式（1）表示的氟代烃，C x H y F z，其中x是4至6的整数，y 是1〜4的整数，z为正整数，条件是（y + z）为2以下。具有非常小直径和高纵横比的接触孔可以通过使用单一工艺气体等离子体蚀刻氧化硅层而形成为基本垂直的形状而没有颈缩。

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