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31. 发明授权

US5202273A Method of manufacturing a vertical semiconductor device 失效
标题翻译：制造垂直半导体器件的方法
公开(公告)号：US5202273A
公开(公告)日：1993-04-13
申请号：US729239
申请日：1991-07-12
申请人： Shunji Nakamura
发明人： Shunji Nakamura
IPC分类号： H01L27/12 , H01L21/02 , H01L21/04 , H01L21/20 , H01L21/336 , H01L29/73 , H01L29/772 , H01L29/78 , H01L29/786 , H01L29/80 , H01L29/808 , H01L39/22
CPC分类号： H01L29/66068 , H01L21/2007 , H01L29/7317 , H01L29/7722 , H01L29/78642 , H01L29/8083 , H01L2924/0002 , Y10S148/15 , Y10S438/931
摘要： A semiconductor device comprises a first electrode buried in one main face of a substrate and surrounded by a first insulator, a field oxide film covering the surface of the first electrode, a semiconductor layer connected with the first electrode, a second insulator covering the surface of the semiconductor layer, a second electrode connected with the semiconductor layer, a gate electrode connected with the semiconductor layer between the second insulator and the field oxide film, and an outgoing electrode connected with the first electrode.
摘要翻译：半导体器件包括：第一电极，其被埋置在基板的一个主面内并由第一绝缘体包围，覆盖第一电极的表面的场氧化膜，与第一电极连接的半导体层，覆盖第一绝缘体的表面的第二绝缘体所述半导体层，与所述半导体层连接的第二电极，与所述第二绝缘体和所述场氧化物膜之间的所述半导体层连接的栅电极，以及与所述第一电极连接的输出电极。

32. 发明授权

US4607938A Method and apparatus for forming a thin layer of developer 失效
标题翻译：用于形成薄层显影剂的方法和装置
公开(公告)号：US4607938A
公开(公告)日：1986-08-26
申请号：US601715
申请日：1984-04-18
申请人： Atsushi Hosoi , Kimio Nakahata , Hatsuo Tajima , Hidemi Egami , Fumitaka Kan , Shunji Nakamura
发明人： Atsushi Hosoi , Kimio Nakahata , Hatsuo Tajima , Hidemi Egami , Fumitaka Kan , Shunji Nakamura
IPC分类号： G03G15/09 , G03G15/08
CPC分类号： G03G15/09
摘要： A developing apparatus for developing a latent image includes a container, a developer carrying member movable along an endless path from inside the container to the outside, a magnetic field generator inside the carrying member, a partition member in the container for separately supporting, before operation, a first developer of magnetic particles and a second developer of non-magnetic particles, and a regulating member cooperable with the magnetic field generator. Upon release of the partition member, the first developer forms a base layer on the carrying member and the second developer forms on the base layer and then, upon circulation of the carrying member the second developer is moved past the regulating member.
摘要翻译：用于显影潜像的显影装置包括容器，可沿着从容器内部到外部的环形路径移动的显影剂承载构件，运送构件内部的磁场发生器，操作前分开支撑的容器中的分隔构件，磁性颗粒的第一显影剂和非磁性颗粒的第二显影剂，以及与磁场发生器配合的调节构件。在释放分隔构件时，第一显影剂在承载构件上形成基层，并且第二显影剂在基层上形成，然后在承载构件循环时，使第二显影剂移动经过调节构件。

33. 发明授权

US4563978A Developing apparatus 失效
公开(公告)号：US4563978A
公开(公告)日：1986-01-14
申请号：US594863
申请日：1984-03-29
申请人： Shunji Nakamura , Fumitaka Kan , Hidemi Egami , Atsushi Hosoi , Hatsuo Tajima , Kimio Nakahata
发明人： Shunji Nakamura , Fumitaka Kan , Hidemi Egami , Atsushi Hosoi , Hatsuo Tajima , Kimio Nakahata
IPC分类号： G03G15/09
CPC分类号： G03G15/0921
摘要： A developing apparatus includes a container for containing a non-magnetic developer and magnetic particles, a developer carrier for carrying the non-magnetic developer toward an image bearing member, a regulating member located adjacent to the non-magnetic developer discharge opening of the container to form a gap between the surface of the carrier and the regulating member, and a magnet positioned adjacent to the carrier at the side of the carrier opposite to the regulating member and causing the magnetic particles to form a magnetic brush upstream of the regulating member adjacent to the developer discharge opening of the container with respect to the direction in which the developer carrier is moved, whereby a thin layer of the non-magnetic developer can be formed on the developer carrier.

34. 发明授权

US4559899A Thin developer layer forming device 失效
标题翻译：薄型显影剂层形成装置
公开(公告)号：US4559899A
公开(公告)日：1985-12-24
申请号：US630411
申请日：1984-07-13
申请人： Fumitaka Kan , Hidemi Egami , Atsushi Hosoi , Hatsuo Tajima , Shunji Nakamura , Kimio Nakahata
发明人： Fumitaka Kan , Hidemi Egami , Atsushi Hosoi , Hatsuo Tajima , Shunji Nakamura , Kimio Nakahata
IPC分类号： G03G15/09
CPC分类号： G03G15/0942
摘要： A thin developer layer forming device includes a developer supply container, having an opening, for containing a non-magnetic developer and magnetic particles, an endlessly movable developer carrying member of a non-magnetic material for carrying a developer, which is movable between an inside of the developer supply container and an outside of the developer supply container through the opening, rotatable member for generating a magnetic field, disposed in the carrying member, and a magnetic particles confining member, provided outside of the developer carrying member and cooperable with a magnetic pole of the magnetic field generating means to confine the magnetic particles within the developer container, wherein the magnetic field generating member is rotated in the developer carrier to move the magnetic particles in a direction opposite to a direction of movement of the developer carrying member.
摘要翻译：薄的显影剂层形成装置包括显影剂供应容器，其具有用于容纳非磁性显影剂和磁性颗粒的开口，用于承载显影剂的非磁性材料的可循环移动的显影剂承载构件，其可在内部的显影剂供给容器和显影剂供应容器的外部，设置在承载构件中的用于产生磁场的可旋转构件和设置在显影剂承载构件外部并与磁性配合的磁性颗粒限制构件磁场产生装置的磁极将磁性颗粒限制在显影剂容器内，其中磁场产生部件在显影剂载体中旋转，以使磁性颗粒沿与显影剂承载部件的运动方向相反的方向移动。

35. 发明授权

US4425373A Method for image development by application of alternating bias 失效
标题翻译：通过应用交替偏差进行图像开发的方法
公开(公告)号：US4425373A
公开(公告)日：1984-01-10
申请号：US275402
申请日：1981-06-18
申请人： Nagao Hosono , Tohru Takahashi , Junichiro Kanbe , Tsutomu Toyono , Shunji Nakamura , Yasuyuki Tamura
发明人： Nagao Hosono , Tohru Takahashi , Junichiro Kanbe , Tsutomu Toyono , Shunji Nakamura , Yasuyuki Tamura
IPC分类号： G03G15/08 , G03G13/08 , G03G15/00 , G03G15/06 , G03G15/09 , B05D1/04
CPC分类号： G03G13/08 , G03G15/0914
摘要： A method and an apparatus for developing images, wherein a moving latent image holding member is opposed to a developer carrying member with a space gap between them at a developing section in an amount greater than the thickness of a developer layer coated on the surface of the developer carrying member, and an alternating electric field is applied across the latent image holding member and the developer carrying member to cause the developer to reciprocatingly move between the developer carrying member and an image portion as well as a non-image portion on the latent image holding member at least at the closest region to the latent image holding member and the developer carrying member, thereby causing the surface of the developer layer carried on the developer carrying member to move in substantially the same direction and at substantially the same speed as the latent image surface at the developing section.
摘要翻译：一种用于显影图像的方法和装置，其中移动潜像保持构件与显影剂承载构件相对，显影剂承载构件在显影部分之间具有间隙，其量大于涂覆在表面上的显影剂层的厚度显影剂承载构件和交替电场施加在潜像保持构件和显影剂承载构件上，以使显影剂在显影剂承载构件和图像部分之间往复运动以及潜像上的非图像部分至少在与潜像保持构件和显影剂承载构件最接近的区域处的保持构件，从而使承载在显影剂承载构件上的显影剂层的表面基本上与潜在的基本上相同的方向和基本上相同的速度移动显影部分的图像表面。

36. 发明授权

US4355884A Electrophotographic apparatus 失效
标题翻译：电子照相设备
公开(公告)号：US4355884A
公开(公告)日：1982-10-26
申请号：US111972
申请日：1980-01-14
申请人： Haruhisa Honda , Tsutomu Toyono , Shunji Nakamura , Kano Tanaka , Yoshimasa Kimura
发明人： Haruhisa Honda , Tsutomu Toyono , Shunji Nakamura , Kano Tanaka , Yoshimasa Kimura
IPC分类号： G03G15/02 , H01T19/00 , G03G15/00
CPC分类号： H01T19/00 , G03G15/0283 , G03G15/0291 , Y10T307/297
摘要： One of several corona dischargers used in an electrophotographic apparatus is connected to a power source transformer so as to selectively operate these corona dischargers. The power source transformer is provided with a tertiary winding, to which a switching device is connected. When the switching device is turned on, a secondary output from the transformer becomes lower than a corona discharging limit voltage, whereby the corona discharging stops.
摘要翻译：在电子照相设备中使用的几种电晕放电器之一连接到电源变压器，以选择性地操作这些电晕放电器。电源变压器设有三级绕组，开关装置连接到三级绕组。当开关装置接通时，变压器的二次输出变得低于电晕放电极限电压，从而电晕放电停止。

37. 发明授权

US07348630B2 Semiconductor device for high frequency uses and manufacturing method of the same 有权
标题翻译：用于高频用途的半导体器件及其制造方法
公开(公告)号：US07348630B2
公开(公告)日：2008-03-25
申请号：US10901196
申请日：2004-07-29
申请人： Tsunenori Yamauchi , Shunji Nakamura
发明人： Tsunenori Yamauchi , Shunji Nakamura
IPC分类号： H01L29/94
CPC分类号： H01L29/66545 , H01L29/1045 , H01L29/1083 , H01L29/402 , H01L29/456 , H01L29/495 , H01L29/66659 , H01L29/7835
摘要： The semiconductor device has a semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a pair of impurity diffusion layers formed in a surface layer of the semiconductor substrate at both sides of each of the gate electrodes. The semiconductor device also has drift layers formed in the surface layer of the semiconductor substrate between the gate electrodes and one of the impurity diffusion layers as a same conduction type as the impurity diffusion layers. The gate electrodes are made of metal including aluminum, and each is formed in an overhang shape. The semiconductor device can provide an LDMOS transistor enhanced in maximum transmission frequency and power gain and capable of a high-frequency operation with high efficiency as a basic element of a high-frequency power amplifier.
摘要翻译：半导体器件具有半导体衬底，形成在半导体衬底上方的栅极电极和形成在每个栅电极两侧的半导体衬底的表面层中的一对杂质扩散层。半导体器件还在半导体衬底的表面层中形成了与栅极电极和杂质扩散层中的一个作为与杂质扩散层相同的导电类型的漂移层。栅电极由包括铝的金属制成，并且各自形成为突出形状。半导体器件可以提供增强的最大传输频率和功率增益的LDMOS晶体管，并且能够作为高频功率放大器的基本元件以高效率进行高频操作。

38. 发明授权

US07226837B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07226837B2
公开(公告)日：2007-06-05
申请号：US11201090
申请日：2005-08-11
申请人： Shunji Nakamura
发明人： Shunji Nakamura
IPC分类号： H01L21/8242
CPC分类号： H01L27/10855 , H01L27/10811 , H01L27/10814 , H01L27/10817 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60 , H01L28/65
摘要： A semiconductor device comprises: a lower contact electrode 1; an adhesion improving layer 3 formed on the lower contact electrode 1; and a capacitor including a lower electrode 4 in a projected structure formed on the adhesion improving layer 3, a capacitor dielectric film 5 formed on the lower electrode 4, and an upper electrode 6 formed on the capacitor dielectric film 5, in which a gap is formed on a sidewall of the adhesion improving layer 3. The gap is at least partially left as a cavity 7. The gap insulates the upper electrode 6 and the adhesion improving layer 3 by the cavity 7.
摘要翻译：半导体器件包括：下接触电极1; 形成在下接触电极1上的粘附改善层3; 以及电容器，其包括形成在粘附改善层3上的突出结构中的下电极4，形成在下电极4上的电容器电介质膜5和形成在电容器电介质膜5上的上电极6，其间隙为形成在粘附改善层3的侧壁上。间隙至少部分留作空腔7。间隙通过空腔7使上电极6和粘附改善层3绝缘。

39. 发明授权

US07199054B2 Semiconductor memory device and method for fabricating the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07199054B2
公开(公告)日：2007-04-03
申请号：US11248136
申请日：2005-10-13
申请人： Shunji Nakamura
发明人： Shunji Nakamura
IPC分类号： H01L21/302
CPC分类号： H01L27/10873 , H01L21/84 , H01L27/108 , H01L27/1082 , H01L27/10844 , H01L27/1203 , H01L29/945
摘要： A semiconductor memory device comprises a silicon layer having a first diffused region and a second diffused region formed therein, a gate electrode formed through an insulating film on one side of the silicon layer between the first and the second diffused regions, a capacitor formed on said one side of the silicon layer and having a storage electrode connected to the first diffused region, and a bit line formed on the other side of the silicon layer and connected to the second diffused region, whereby a semiconductor memory device of SOI structure can be easily fabricated. The bit line connected to the second diffused region is formed on the other side of the semiconductor layer, whereby the bit line can be arranged without restriction by the structure, etc. of the capacitor. Short circuit between the capacitor and the bit line can be prevented.
摘要翻译：半导体存储器件包括具有形成在其中的第一扩散区域和第二扩散区域的硅层，在第一和第二扩散区域之间的硅层的一侧上通过绝缘膜形成的栅电极，形成在所述第一扩散区域上的电容器硅层的一侧并具有连接到第一扩散区的存储电极，以及形成在硅层的另一侧并连接到第二扩散区的位线，由此SOI结构的半导体存储器件可以容易地制造。连接到第二扩散区的位线形成在半导体层的另一侧，由此可以不受限于电容器的结构等而排列位线。可以防止电容器和位线之间的短路。

40. 发明申请

US20070045860A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070045860A1
公开(公告)日：2007-03-01
申请号：US11589104
申请日：2006-10-30
申请人： Shunji Nakamura
发明人： Shunji Nakamura
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/7682 , H01L23/5222 , H01L23/5227 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/48463 , H01L2924/00
摘要： The semiconductor device comprises one layer including interconnections 32a to 32d formed above a substrate 10, and an insulation layer 34 formed over said one layer, a cavity 40 being included in said one layer. The dummy interconnection is removed by etching, whereby the layer can be planarized while the parasitic capacitance between the interconnections can be made small. Furthermore, the dielectric constant of the air in the cavity is much smaller than that of the inter-layer insulation film, whereby in comparison with the parasitic constant of the case where the inter-layer insulation film are formed simply between interconnections, the parasitic constant between the interconnections of the present invention can be made smaller.
摘要翻译：该半导体器件包括一层，其包括形成在衬底10上方的互连32a至32d，以及形成在所述一层上的绝缘层34，所述一层中包括空腔40。通过蚀刻去除虚拟互连，由此可以平坦化该层，同时可以使互连之间的寄生电容变小。此外，空腔中的空气的介电常数远小于层间绝缘膜的介电常数，因此与层间绝缘膜简单地形成在互连之间的情况的寄生常数相比，寄生常数在本发明的互连之间可以做得更小。

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