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31. 发明授权

US07998372B2 Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel 有权
标题翻译：半导体薄膜，其制造方法，薄膜晶体管和有源矩阵驱动显示面板
公开(公告)号：US07998372B2
公开(公告)日：2011-08-16
申请号：US12094228
申请日：2006-11-16
申请人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka
IPC分类号： H01B1/08 , H01L29/12
CPC分类号： H01L29/7869 , Y10S977/773
摘要： Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film 40 is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17 cm−3 or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
摘要翻译：公开了即使在柔性树脂基板上也可以在较低温度下形成的半导体薄膜。由于半导体薄膜对于可见光是稳定的并且具有诸如晶体管特性的高的器件特性，所以在使用半导体薄膜作为用于驱动显示器的开关装置的情况下，即使与像素部分重叠，显示面板不会劣化。具体地，通过形成含有氧化锌和氧化铟的非晶体膜然后氧化该膜，使得所得膜的载流子密度为10 + 17cm-3以下，霍尔迁移率为2，制造透明半导体薄膜40 cm2 / V·sec以上，能带隙为2.4EV以上。

32. 发明申请

US20110006297A1 PATTERNED CRYSTALLINE SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THIN FILM TRANSISTOR AND FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：图形晶体半导体薄膜，薄膜晶体管和场效应晶体管的制造方法
公开(公告)号：US20110006297A1
公开(公告)日：2011-01-13
申请号：US12747033
申请日：2008-11-14
申请人： Kazuyoshi Inoue , Koki Yano , Futoshi Utsuno , Masashi Kasami , Shigekazu Tomai , Hirokazu Kawashima
发明人： Kazuyoshi Inoue , Koki Yano , Futoshi Utsuno , Masashi Kasami , Shigekazu Tomai , Hirokazu Kawashima
IPC分类号： H01L29/12 , H01L21/16
CPC分类号： H01L29/7869 , H01L21/02565 , H01L21/02675 , H01L21/02689 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A patterned crystalline semiconductor thin film which is obtained by a method including: forming an amorphous thin film comprising indium oxide as a main component, crystallizing part of the amorphous thin film to allow the part to be semiconductive, and removing an amorphous part of the partially crystallized thin film by etching.
摘要翻译：一种图案化的结晶半导体薄膜，其通过以下方法获得：包括：形成包含氧化铟作为主要成分的非晶薄膜，使所述非晶薄膜的结晶部分成半导体，并且去除所述部分的非晶部分通过蚀刻结晶的薄膜。

33. 发明申请

US20100108502A1 Sputtering Target and Oxide Semiconductor Film 有权
标题翻译：溅射靶和氧化物半导体膜
公开(公告)号：US20100108502A1
公开(公告)日：2010-05-06
申请号：US12518988
申请日：2007-11-30
申请人： Kazuyoshi Inoue , Koki Yano , Futoshi Utsuno
发明人： Kazuyoshi Inoue , Koki Yano , Futoshi Utsuno
IPC分类号： C23C14/08 , C23C14/34 , B27N3/02
CPC分类号： H01J37/3429 , C01G15/00 , C04B35/01 , C04B35/453 , C04B35/6261 , C04B35/62625 , C04B35/62655 , C04B35/64 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6585 , C04B2235/6586 , C04B2235/725 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414 , H01J2237/332 , H01L21/02565 , H01L21/02631
摘要： A sputtering target containing oxides of indium (In), gallium (Ga) and zinc (Zn), which includes a compound shown by ZnGa2O4 and a compound shown by InGaZnO4.
摘要翻译：包含铟（In），镓（Ga）和锌（Zn）的氧化物的溅射靶，其包含ZnGa 2 O 4所示的化合物和InGaZnO 4所示的化合物。

34. 发明申请

US20100053523A1 TRANSPARENT CONDUCTIVE FILM, AND SUBSTRATE, ELECTRONIC DEVICE AND LIQUID CRYSTAL DISPLAY USING THE SAME 有权
标题翻译：透明导电膜和基板，电子器件和使用其的液晶显示器
公开(公告)号：US20100053523A1
公开(公告)日：2010-03-04
申请号：US12094337
申请日：2006-10-31
申请人： Satoshi Umeno , Akira Kaijo , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka
发明人： Satoshi Umeno , Akira Kaijo , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka
IPC分类号： G02F1/1333 , H01B1/08 , H05K1/09 , B05D5/12
CPC分类号： C01G15/00 , C01G19/006 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2006/40 , G02F1/13439
摘要： A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity.
摘要翻译：包括氧化铟，氧化锡和至少一种镧系金属氧化物的透明导电膜，该膜包括连接到导体的部分，以及至少具有结晶度的连接部分。

35. 发明授权

US07648657B2 In Sm oxide sputtering target 有权
标题翻译：在Sm氧化物溅射靶中
公开(公告)号：US07648657B2
公开(公告)日：2010-01-19
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
发明人： Kazuyoshi Inoue , Nobuo Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
IPC分类号： H01B1/08 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译：溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。相对于所有阳离子元素的总和为％以下。

36. 发明授权

US07612850B2 Semi-transmissive/semi-reflective electrode substrate, method for manufacturing same, and liquid crystal display using such semi-transmissive/semi-reflective electrode substrate 失效
标题翻译：半透射/半反射电极基板，其制造方法以及使用这种半透射/半反射电极基板的液晶显示器
公开(公告)号：US07612850B2
公开(公告)日：2009-11-03
申请号：US10591529
申请日：2005-02-18
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/1335
CPC分类号： G02F1/13439 , G02F1/133555
摘要： Provided are a semi-transmitting and semi-reflecting electrode substrate provided with a transparent conductive layer which is almost free from the generation of residues caused by etching and is resistant to an etchant for a metal reflecting layer (metal layer), a method of producing the semi-transmitting and semi-reflecting electrode substrate and a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. Specifically, the invention relates a semi-transmitting and semi-reflecting electrode substrate comprising a transparent substrate, a transparent conductive layer which is disposed on the transparent substrate and contains indium oxide as its major component and further one or two or more oxides selected from tungsten oxide, molybdenum oxide and niobium oxide and a metal reflecting layer which is disposed on the transparent substrate, reflects extraneous light and is connected with the transparent conductive layer, to a method producing the semi-transmitting and semi-reflecting electrode substrate and to a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. This semi-transmitting and semi-reflecting electrode substrate is almost free from the generation of residues, has high processability and improves the yield.
摘要翻译：提供一种具有透明导电层的半透射半反射电极基板，其几乎不会产生由蚀刻引起的残留物，并且耐金属反射层（金属层）的蚀刻剂，制造方法半透射半反射电极基板和使用半透射半反射电极基板的液晶显示装置。具体地说，本发明涉及一种半透射半反射电极基板，其包括透明基板，透明导电层，其设置在透明基板上并且包含氧化铟作为其主要成分，还有一种或两种以上选自钨氧化物，氧化钼和铌氧化物以及设置在透明基板上的金属反射层，反射外部光并与透明导电层连接，制造半透射半反射电极基板和液体的方法使用半透射和半反射电极基板的晶体显示装置。这种半透射和半反射电极基质几乎没有残留物的产生，具有高加工性和提高产率。

37. 发明申请

US20090127548A1 SEMICONDUCTOR THIN FILM AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：半导体薄膜及其制造方法
公开(公告)号：US20090127548A1
公开(公告)日：2009-05-21
申请号：US12090731
申请日：2006-08-07
申请人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
发明人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
IPC分类号： H01L29/66 , H01L21/34
CPC分类号： C30B29/06 , C01G15/00 , C01G15/006 , C01P2006/40 , C04B35/01 , C04B2235/3224 , C04B2235/3229 , C04B2235/3286 , C04B2235/6567 , C23C14/086 , C23C14/3414 , C30B29/16 , H01L21/02565 , H01L21/02631 , H01L21/02667
摘要： This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10+1 to 10+8 Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.
摘要翻译：本发明提供了一种透明氧化物半导体，其包括以氧化铟为主要成分的氧化物和氧化铈作为添加剂，并且具有不发生光衍生的故障的特性，因此薄膜的电阻率没有变化通过加热等，迁移率高，以及其制造方法。使用特征在于包含氧化铟和氧化铈并且是结晶并且具有10 + 1至10 +8Ωgmm的电阻率的半导体薄膜。该半导体薄膜的电阻率没有显着变化，迁移率高。因此，可以通过构造使用该半导体薄膜的开关元件来提供具有改善的开关特性的元件。

38. 发明申请

US20090090914A1 SEMICONDUCTOR THIN FILM, METHOD FOR PRODUCING THE SAME, AND THIN FILM TRANSISTOR 审中-公开
标题翻译：半导体薄膜，其制造方法和薄膜晶体管
公开(公告)号：US20090090914A1
公开(公告)日：2009-04-09
申请号：US12094069
申请日：2006-11-16
申请人： Koki Yano , Kazuyoshi Inoue , Yukio Shimane , Tadao Shibuya , Masahiro Yoshinaka
发明人： Koki Yano , Kazuyoshi Inoue , Yukio Shimane , Tadao Shibuya , Masahiro Yoshinaka
IPC分类号： H01L29/786 , H01L29/12 , C23C14/34 , H01L21/20
CPC分类号： H01L29/66742 , C01G19/00 , C01P2006/40 , H01L29/66969 , H01L29/7869
摘要： A transparent semiconductor thin film 40 having low carrier concentration and a large energy band gap is produced by forming a thin film which contains indium oxide and an oxide of a positive divalent element, and then oxidizing or crystallizing the thin film.
摘要翻译：通过形成含有氧化铟和正二价元素的氧化物的薄膜，然后使薄膜氧化或结晶，来制造载流子浓度低，能带隙大的透明半导体薄膜40。

39. 发明申请

US20090039775A1 CONDUCTIVE LAMINATE AND ORGANIC EL DEVICE 审中-公开
标题翻译：导电层压板和有机EL器件
公开(公告)号：US20090039775A1
公开(公告)日：2009-02-12
申请号：US12066453
申请日：2006-08-15
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Shigeo Matsuzaki
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Shigeo Matsuzaki
IPC分类号： H01J1/63 , B32B7/02
CPC分类号： H01L51/5218 , H01L51/5215 , Y10T428/24942
摘要： A conductive multilayer stack (10) which includes: a first layer (12) formed of a metal or transparent conductive material, and a second layer (14) provided on the first layer (12), which is formed of an oxide, carbide or nitride of at least one metal selected from the group consisting of indium, tin, zinc, aluminum, magnesium, silicon, titanium, vanadium, manganese, cobalt, nickel, copper, gallium, germanium, yttrium, zirconia, niobium, molybdenum, antimony, barium, hafnium, tantalum, tungsten, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium and ytterbium, or carbon, wherein the second layer (14) has a work function larger than that of the first layer (12), and the second layer (14) had a film thickness of at least 0.5 nm and smaller than 50 nm.
摘要翻译：一种导电多层堆叠（10），其包括：由金属或透明导电材料形成的第一层（12）和设置在第一层（12）上的第二层（14），其由氧化物，碳化物或选自铟，锡，锌，铝，镁，硅，钛，钒，锰，钴，镍，铜，镓，锗，钇，氧化锆，铌，钼，锑中的至少一种金属的氮化物，钡，铪，钽，钨，铋，镧，铈，镨，钕，钐，铕，钆，铽，镝，钬，铒，ium和镱或碳，其中第二层（14）大于第一层（12）的厚度，第二层（14）的膜厚度至少为0.5nm且小于50nm。

40. 发明申请

US20090001374A1 Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates 审中-公开
标题翻译： Tft基板，反射Tft基板和制造这些基板的方法
公开(公告)号：US20090001374A1
公开(公告)日：2009-01-01
申请号：US12162545
申请日：2007-01-16
申请人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
发明人： Kazuyoshi Inoue , Koki Yano , Nobuo Tanaka , Tokie Tanaka
IPC分类号： H01L21/70 , H01L27/088
CPC分类号： H01L29/78603 , G02F1/133553 , G02F1/1362 , H01L27/1214 , H01L27/1218 , H01L29/7869
摘要： An object of the invention is to propose a TFT substrate and a reflective TFT substrate which can be operated stably for a prolonged period of time, can be prevented from being suffering from crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the number of production steps, as well as to propose the method for producing these substrates.A TFT substrate 1001 comprises: a glass substrate 1010; a gate electrode 1023 and a gate wire 1024 insulated by having their top surfaces covered with a gate insulating film 1030 and by having their side surfaces covered with an interlayer insulating film 1050; an n-type oxide semiconductor layer 1040 formed on the gate insulating film 1030 above the gate electrode 1023; an oxide transparent conductor layer 1060 formed on the n-type oxide semiconductor layer 1040 with a channel part 1044 interposed therebetween; and a channel guard 1500 for protecting the channel part 1044.
摘要翻译：本发明的目的是提出一种能够长时间稳定地操作的TFT基板和反射型TFT基板，可以防止串扰，并且能够通过减少数量来降低制造成本生产步骤，以及提出生产这些基材的方法。 TFT基板1001包括：玻璃基板1010; 栅电极1023和栅极线1024通过使其顶表面被栅极绝缘膜1030覆盖并且通过使它们的侧表面被层间绝缘膜1050覆盖而被绝缘; 形成在栅极电极1023上方的栅极绝缘膜1030上的n型氧化物半导体层1040; 形成在n型氧化物半导体层1040上的氧化物透明导体层1060，其间插入有沟道部1044; 以及用于保护通道部分1044的通道护罩1500。

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