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31. 发明授权

US6051851A Semiconductor devices utilizing silicide reaction 失效
标题翻译：利用硅化物反应的半导体器件
公开(公告)号：US6051851A
公开(公告)日：2000-04-18
申请号：US917675
申请日：1997-08-26
申请人： Tadahiro Ohmi , Mamoru Miyawaki , Yoshio Nakamura , Hiroshi Suzuki , Takeo Yamashita
发明人： Tadahiro Ohmi , Mamoru Miyawaki , Yoshio Nakamura , Hiroshi Suzuki , Takeo Yamashita
IPC分类号： H01L21/82 , G11C17/16 , H01L23/525 , H01L27/10 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L27/112 , G11C17/16 , H01L23/5252 , H01L27/11206 , H01L2924/0002 , H01L2924/3011
摘要： Cheap semiconductor memory devices are provided so as to enable high-speed writing and reading but rarely to malfunction, thus being high in reliability. In a semiconductor device which comprises a plurality of cells each having a semiconductor layer between a pair of conductors, at least one of the pair of conductors is made of a metal, and the semiconductor layer comprises an amorphous silicon that can form a silicide region with the metal as reacting at a reaction rate of not less than 10 m/sec. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is made of a metal silicide-reacting with the amorphous silicon, and in that the silicide region formed is conic. Another device is characterized in that the semiconductor layer is an amorphous silicon, in that at least one of the pair of conductors is formed of a metal silicide-reacting with the amorphous silicon, and in that a film-formed surface is produced without being exposed to an oxide atmosphere, between a step of forming the amorphus silicon and a step of forming the metal.
摘要翻译：提供廉价的半导体存储器件，以便能够进行高速写入和读取，但很少发生故障，因此可靠性高。在包括多个单元的半导体器件中，每个单元各自在一对导体之间具有半导体层，所述一对导体中的至少一个导体由金属制成，并且所述半导体层包括可形成硅化物区域的非晶硅，金属以不小于10m /秒的反应速率反应。另一种器件的特征在于，半导体层是非晶硅，其中该对导体中的至少一个导体由与非晶硅反应的金属硅化物制成，并且形成的硅化物区域是圆锥形。另一种器件的特征在于，半导体层是非晶硅，其中该对导体中的至少一个导体由与非晶硅反应的金属硅化物形成，并且由此形成膜形成表面而不暴露在氧化物气氛之间，形成无定形硅的步骤和形成金属的步骤。

32. 发明授权

US5994757A Electronic circuit device capable for use as a memory device 失效
标题翻译：能用作存储装置的电子电路装置
公开(公告)号：US5994757A
公开(公告)日：1999-11-30
申请号：US383186
申请日：1995-02-03
申请人： Takeshi Ichikawa , Mamoru Miyawaki , Shunsuke Inoue
发明人： Takeshi Ichikawa , Mamoru Miyawaki , Shunsuke Inoue
IPC分类号： G11C17/06 , G11C17/16 , H01L23/525 , H01L27/10 , H01L29/00 , H01L29/04 , H01L29/861
CPC分类号： G11C17/16 , H01L23/5252 , H01L2924/0002
摘要： An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high resistivity state to a low resistivity state in accordance with a voltage applied between the first and second conductors.
摘要翻译：电子电路装置包括第一和第二导体以及设置在它们之间的高电阻部件。高电阻部件由根据施加在第一和第二导体之间的电压从高电阻率状态变为低电阻率状态的材料构成。

33. 发明授权

US5897182A Substrate for a liquid crystal display device and liquid crystal display device having the same 失效
标题翻译：液晶显示装置用基板及具有该液晶显示装置的液晶显示装置
公开(公告)号：US5897182A
公开(公告)日：1999-04-27
申请号：US900292
申请日：1997-07-25
申请人： Mamoru Miyawaki
发明人： Mamoru Miyawaki
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368
CPC分类号： G02F1/136286
摘要： In a TFT substrate for a liquid crystal display and the liquid crystal display having such a TFT substrate, a defect in the wiring due to improper patterning of a gate electrode is prevented and an orientation property is improved by connecting wiring areas to a scan line and connecting a gate electrode to the scan line at two points, and the connecting wiring areas are formed in a ring shape so that a source electrode is located in an area surrounded by the connecting wiring areas, or arranging the wiring area to relieve a step.
摘要翻译：在液晶显示器用TFT基板和具有这样的TFT基板的液晶显示器中，防止了由于栅电极的图案化而导致的布线缺陷，并且通过将布线区域连接到扫描线而提高了取向性，在两点处将栅电极连接到扫描线，并且连接布线区域形成为环形，使得源极电极位于由连接布线区域包围的区域中，或者布置布线区域以减轻台阶。

34. 发明授权

US5867045A Signal processor comprising means for holding output signals of image sensors and means for mixing the held signals 失效
标题翻译：信号处理器包括用于保持图像传感器的输出信号的装置和用于混合保持的信号的装置
公开(公告)号：US5867045A
公开(公告)日：1999-02-02
申请号：US744838
申请日：1996-11-19
申请人： Isamu Ueno , Mamoru Miyawaki , Tetsunobu Kohchi
发明人： Isamu Ueno , Mamoru Miyawaki , Tetsunobu Kohchi
IPC分类号： H04N5/347 , H04N5/369 , G11C27/02
CPC分类号： H04N3/1512 , H04N3/155
摘要： A signal processor with a simplified circuit configuration provides an improved processing speed and can be realized of small size and at inexpensive cost. The signal processor includes signal holding means for holding output signals from plural signal sources (S1-S4), and signal mixing means (M31-M34) for mixing at least two signals among the plural signals held to output plural mixed signals. Since the mixed signals are less than the signal sources in number, the small number of signal lines can lead to an increased processing speed. Then the mixed signals corresponding to discrete signals from plural signal sources enables processing without substantially destroying information.
摘要翻译：具有简化的电路配置的信号处理器提供了改进的处理速度，并且可以以小尺寸和廉价的成本实现。信号处理器包括用于保持来自多个信号源（S1-S4）的输出信号的信号保持装置和用于混合保持以输出多个混合信号的多个信号中的至少两个信号的信号混合装置（M31-M34）。由于混合信号的数量少于信号源，所以信号线的数量少可能导致处理速度的提高。那么对应于来自多个信号源的离散信号的混合信号使得能够进行处理而基本上不破坏信息。

35. 发明授权

US5854097A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5854097A
公开(公告)日：1998-12-29
申请号：US440917
申请日：1995-05-15
申请人： Tadahiro Ohmi , Mamoru Miyawaki
发明人： Tadahiro Ohmi , Mamoru Miyawaki
IPC分类号： H01L29/73 , H01L21/283 , H01L21/316 , H01L21/331 , H01L21/336 , H01L29/08 , H01L29/10 , H01L29/417 , H01L29/423 , H01L29/737 , H01L29/78 , H01L21/338
CPC分类号： H01L29/66287 , H01L21/31683 , H01L29/0847 , H01L29/1033 , H01L29/41775 , H01L29/42304 , H01L29/66272 , H01L29/66545 , H01L29/66613 , H01L29/66628 , H01L29/7375 , H01L29/7378 , H01L2924/0002 , Y10S148/10 , Y10S438/926 , Y10S438/951
摘要： A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.
摘要翻译：一种具有至少具有其表面上没有自然氧化物膜和由抗蚀剂残渣引起的杂质颗粒的表面的第一膜的器件，以及形成在与第一膜的表面相邻的表面上的导电材料层其中通过与导电材料层的表面反应在导电材料层的表面上形成绝缘化合物膜，并且在第一膜的表面上形成预定的第二膜。

36. 发明授权

US5812231A Display unit 失效
标题翻译：显示单元
公开(公告)号：US5812231A
公开(公告)日：1998-09-22
申请号：US492247
申请日：1995-06-19
申请人： Tetsunobu Kochi , Mamoru Miyawaki , Shunsuke Inoue , Takanori Watanabe
发明人： Tetsunobu Kochi , Mamoru Miyawaki , Shunsuke Inoue , Takanori Watanabe
IPC分类号： G02F1/1333 , G02F1/133 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/20 , G09G3/36 , H01L27/12 , H01L27/13 , H01L29/786 , G09G5/00 , H01L29/04
CPC分类号： G09G3/3688 , G09G3/3648 , H01L27/1203 , H01L27/13 , G02F1/13454 , G02F2001/136281 , G09G2310/0248 , G09G2310/0297 , G09G3/2011
摘要： A high-density impurity semiconductor region having the same conductivity type as a single-crystal silicon substrate is formed in addition to a main circuit portion of a peripheral circuit on the single-crystal silicon substrate. This semiconductor region is connected to a given potential point directly leading to an electric source. Alternatively, at a part of the peripheral drive circuit, a high-density impurity semiconductor region having a conductivity type reverse to that of the single-crystal silicon substrate is formed, and this semiconductor region is connected to a given potential point directly leading to an electric source. This can solve the problem that photocarriers (electrons and/or holes) caused by the light having not cut off and having entered into the single-crystal silicon region may enter into the peripheral drive circuit through the single-crystal silicon substrate to cause misoperation of the circuit.
摘要翻译：除了在单晶硅衬底上的外围电路的主电路部分之外，还形成具有与单晶硅衬底相同的导电类型的高密度杂质半导体区域。该半导体区域连接到直接通向电源的给定电位点。或者，在外围驱动电路的一部分，形成具有与单晶硅基板相反的导电类型的高密度杂质半导体区域，并且该半导体区域直接连接到给定的电位点，电源。这可以解决由未被切断并进入单晶硅区域的光引起的光载流子（电子和/或空穴）可能通过单晶硅衬底进入外围驱动电路的问题，导致误操作电路。

37. 发明授权

US5808336A Storage device 失效
标题翻译：储存设备
公开(公告)号：US5808336A
公开(公告)日：1998-09-15
申请号：US435803
申请日：1995-05-05
申请人： Mamoru Miyawaki
发明人： Mamoru Miyawaki
IPC分类号： G11C17/00 , G11C16/04 , H01L21/8247 , H01L21/84 , H01L27/115 , H01L27/12 , H01L29/788 , H01L29/792
CPC分类号： H01L27/115 , H01L21/84 , H01L27/1203 , H01L2924/0002
摘要： A storage device comprises, on a substrate, a first semiconductor region of one conductivity type, second and third semiconductor regions of a conductivity type opposite to the one conductivity type contiguous to the first semiconductor region, a first electrode which is formed on a region for isolating the second and third semiconductor regions via an insulating layer, and a second electrode formed on the first electrode, but spaced therefrom by an insulating layer. The resistance between the first and second electrodes is selectively changed from a high-resistance state to a low-resistance state is needed, to record a bit of data.
摘要翻译：一种存储装置，在基板上包括一个导电类型的第一半导体区域，与该第一半导体区域相邻的导电类型相反的导电类型的第二和第三半导体区域，形成在第一半导体区域通过绝缘层隔离第二和第三半导体区域，以及形成在第一电极上但与绝缘层隔开的第二电极。需要将第一和第二电极之间的电阻从高电阻状态选择性地改变为低电阻状态，以记录位数据。

38. 发明授权

US5793452A Display device with jig and cooling means 失效
标题翻译：具有夹具和冷却装置的显示装置
公开(公告)号：US5793452A
公开(公告)日：1998-08-11
申请号：US915663
申请日：1997-08-21
申请人： Mamoru Miyawaki
发明人： Mamoru Miyawaki
IPC分类号： G02B26/08 , G02F1/133 , G02F1/1345 , G02F1/136 , G02F1/1368 , G09F9/00 , H01L29/786 , H04N5/74 , G02F1/1333
CPC分类号： G02F1/133385
摘要： In a display device using a liquid-crystal panel, pixel electrodes for reflecting illuminating light, transistors for switching corresponding pixels, and a peripheral driving circuit are integrated on a Si semiconductor substrate. The angle of the surface of connecting portions of a jig for fixing and supporting the Si semiconductor substrate is made to be different from the angle of the surfaces of the pixel electrodes. A cooling device is mounted on the back of the Si semiconductor substrate.
摘要翻译：在使用液晶面板的显示装置中，用于反射照明光的像素电极，用于切换对应像素的晶体管和外围驱动电路集成在Si半导体衬底上。用于固定和支撑Si半导体衬底的夹具的连接部分的表面的角度与像素电极的表面的角度不同。冷却装置安装在Si半导体衬底的背面。

39. 发明授权

US5757054A Display unit 失效
标题翻译：显示单元
公开(公告)号：US5757054A
公开(公告)日：1998-05-26
申请号：US714439
申请日：1996-09-16
申请人： Mamoru Miyawaki , Shunsuke Inoue
发明人： Mamoru Miyawaki , Shunsuke Inoue
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , H01L27/06 , H01L29/04 , H01L31/036
CPC分类号： G02F1/136277 , H01L27/0688 , G02F1/13454
摘要： The present invention solves problems as follows: a problem that, since light for displaying enters into a semiconductor substrate, carrier induced by light occurs in the semiconductor substrate, potential of the substrate fluctuates, and hence display characteristics become worse; a problem that, in the semiconductor substrate, voltages are applied to the peripheral driving circuits so as to operate the peripheral driving circuits formed in a single-crystal area, which makes display characteristics worse by the voltages being conducted to the display area through the substrate; and a problem that, in case potentials of adjacent pixels greatly differ, the difference locally changes. For this purpose, in a display unit including an active matrix substrate having an image display portion being provided with a plurality of switches and a driving circuit for supplying driving signals to the switches around the image display portion, an opposing substrate opposing the active matrix substrate and having a transparent electrode, and a liquid crystal material between both of the active matrix substrate and the opposing substrate, heavily doped impurity regions having impurity density heavier than that of the semiconductor substrate are formed in the image display portion, and the heavily doped impurity regions are connected to a fixed potential around the image display portion.
摘要翻译：本发明解决了以下问题：由于用于显示的光进入半导体衬底，所以在半导体衬底中产生由光引起的载流子，所以衬底的电位变动，因此显示特性变差; 在半导体基板中，向周边驱动电路施加电压以对形成在单晶区域中的外围驱动电路进行操作的问题在于，通过通过基板向显示区域传导的电压使显示特性变差 ; 以及在相邻像素的电位大大不同的情况下，差异局部变化的问题。为此，在包括具有图像显示部分的多个开关的有源矩阵基板和用于向图像显示部分周围的开关提供驱动信号的驱动电路的显示单元中，与有源矩阵基板相对的相对基板并且在有源矩阵基板和相对基板两者之间具有透明电极和液晶材料，在图像显示部分中形成具有比半导体基板重的杂质密度的重掺杂杂质区，并且重掺杂杂质区域连接到图像显示部分周围的固定电位。

40. 发明授权

US5726439A Image sensor comprising a two-dimensional array of photodetectors with both column and row output circuits which are in parallel 失效
标题翻译：图像传感器包括具有并行的列和行输出电路的光电检测器的二维阵列
公开(公告)号：US5726439A
公开(公告)日：1998-03-10
申请号：US717680
申请日：1996-09-23
申请人： Mamoru Miyawaki , Isamu Ueno
发明人： Mamoru Miyawaki , Isamu Ueno
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/357 , H04N5/363 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/3745 , H04N5/378 , H01L27/14 , H01J40/14
CPC分类号： H04N3/1512 , H04N3/155
摘要： An image sensor in which a plurality of photoelectric conversion elements are arranged in a two-dimensional form and which has reading means for enabling output signals from the elements in the row direction and output signals from the elements in the column direction to be read out in parallel is provided.
摘要翻译：一种图像传感器，其中多个光电转换元件以二维形式布置，并且具有读取装置，用于使来自行方向上的元件的输出信号和来自列方向上的元件的输出信号被读出并行提供。

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