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31. 发明授权

US08822000B2 Nanostructure and method for manufacturing the same 有权
标题翻译：纳米结构及其制造方法
公开(公告)号：US08822000B2
公开(公告)日：2014-09-02
申请号：US12520959
申请日：2008-01-16
申请人： Hironori Kumagai , Yasuhiro Hashimoto , Shigeo Hayashi , Takuma Asari , Toshiya Yokogawa
发明人： Hironori Kumagai , Yasuhiro Hashimoto , Shigeo Hayashi , Takuma Asari , Toshiya Yokogawa
IPC分类号： H01M4/583 , H01M10/04 , B05D3/00 , B01J35/00 , B01J23/745 , B01J37/02 , B82Y30/00 , C25D11/02 , C25D11/04 , B01J23/89
CPC分类号： C25D11/02 , B01J23/745 , B01J23/8906 , B01J35/006 , B01J37/0226 , B01J37/0244 , B82Y30/00 , C25D11/04 , C25D11/045 , Y10T29/417 , Y10T29/49108 , Y10T29/49115 , Y10T428/1352 , Y10T428/2462
摘要： The present invention provides a nanostructure on an upper surface of which a small-diameter carbon nanotube (CNT) is formed and which improves an adhesive strength between a substrate and the CNT while controlling an orientation of the CNT, and a method for manufacturing the nanostructure. The nanostructure includes a substrate 101, a porous layer 102 formed on the substrate 101 to have a fine pore, a fine pore diameter control layer 103 formed on the porous layer 102, and a carbon nanotube 701 formed to extend from the fine pore defined by the fine pore diameter control layer 103, and one end of the carbon nanotube is fixed by the fine pore diameter control layer 103. It is preferable that the substrate 101 and the fine pore diameter control layer 103 be electrically conductive. It is preferable that the porous layer 102 be an anode oxide film. It is preferable that a melting point of the fine pore diameter control layer 103 be 600° C. or higher.
摘要翻译：本发明提供了在上表面上形成小直径碳纳米管（CNT）的纳米结构，并且在控制CNT的取向的同时改善了基板和CNT之间的粘合强度，以及纳米结构的制造方法。纳米结构包括基板101，形成在基板101上的具有细孔的多孔层102，形成在多孔层102上的细孔径控制层103和形成为从由多孔层102限定的细孔延伸的细孔微细孔径控制层103和碳纳米管的一端由细孔直径控制层103固定。优选的是，基板101和细孔直径控制层103是导电的。多孔层102优选为阳极氧化膜。优选细孔径控制层103的熔点为600℃以上。

32. 发明授权

US08546167B2 Gallium nitride-based compound semiconductor light-emitting element 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US08546167B2
公开(公告)日：2013-10-01
申请号：US13405725
申请日：2012-02-27
申请人： Ryou Kato , Shunji Yoshida , Toshiya Yokogawa
发明人： Ryou Kato , Shunji Yoshida , Toshiya Yokogawa
IPC分类号： H01L21/00
CPC分类号： H01L21/0262 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L33/007 , H01L33/06 , H01L33/18 , H01L33/325
摘要： A nitride-based semiconductor light-emitting element includes an n-GaN layer 102, a p-GaN layer 107, and a GaN/InGaN multi-quantum well active layer 105, which is interposed between the n- and p-GaN layers 102 and 107. The GaN/InGaN multi-quantum well active layer 105 is an m-plane semiconductor layer, which includes an InxGa1-xN (where 0
摘要翻译：氮化物系半导体发光元件包括n-GaN层102，p-GaN层107和GaN / InGaN多量子阱有源层105，其夹在n-p + GaN层102之间 GaN / InGaN多量子阱有源层105是m面半导体层，其包括厚度为6nm以上的In x Ga 1-x N（其中0

33. 发明授权

US08455905B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08455905B2
公开(公告)日：2013-06-04
申请号：US13274759
申请日：2011-10-17
申请人： Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
发明人： Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
IPC分类号： H01L33/00
CPC分类号： H01L33/54 , H01L33/18 , H01L2933/0091
摘要： Provided is a light-emitting device including: a nitride semiconductor light-emitting element (402) which radiates optically polarized light; and a light emission control layer (404) which covers the light emission surface of the nitride semiconductor light-emitting element (402) and which contains a resin and non-fluorescent particles dispersed in the resin, in which the light emission control layer (404) contains the non-fluorescent particles at a proportion of 0.01 vol % or more and 10 vol % or less, and the non-fluorescent particles have a diameter of 30 nm or more and 150 nm or less.
摘要翻译：本发明提供一种发光装置，其包括：辐射光学偏振光的氮化物半导体发光元件（402）和覆盖所述氮化物半导体发光元件（402）的发光面的发光控制层（404），所述发光控制层包含分散在所述树脂中的树脂和非荧光粒子，所述发光控制层（404））含有0.01vol％以上且10vol％以下的非荧光性粒子，非荧光粒子的直径为30nm以上且150nm以下。

34. 发明申请

US20130126902A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20130126902A1
公开(公告)日：2013-05-23
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

35. 发明授权

US08304802B2 Nitride-based semiconductor device having electrode on m-plane 有权
标题翻译：在m面上具有电极的氮化物半导体器件
公开(公告)号：US08304802B2
公开(公告)日：2012-11-06
申请号：US13167064
申请日：2011-06-23
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L33/00
CPC分类号： H01L21/28575 , H01L33/16 , H01L33/32 , H01L33/40
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体多层结构体20上的电极30.电极30包括Zn层32和设置在Zn层32上的Ag层34.Zn层32与p型半导体区域的表面接触半导体多层结构20。

36. 发明申请

US20120085986A1 GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE 审中-公开
标题翻译：基于氮化镓的化合物半导体发光二极管
公开(公告)号：US20120085986A1
公开(公告)日：2012-04-12
申请号：US13321923
申请日：2010-06-09
申请人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
发明人： Junko Iwanaga , Toshiya Yokogawa , Atsushi Yamada
IPC分类号： H01L33/04
CPC分类号： H01L33/38 , H01L33/16 , H01L33/20 , H01L33/32 , H01L33/382
摘要： The light-emitting diode element of this invention includes: an n-type GaN substrate (7), of which the principal surface (7a) is an m plane; and a multilayer structure on the principal surface (7a) of the substrate (7), which includes an n-type semiconductor layer (2), an active layer (3) on a first region (2a) of the upper surface of the n-type semiconductor layer (2), a p-type semiconductor layer (4), an anode electrode layer (5), and a cathode electrode layer (6) on a second region (2b) of the upper surface of the n-type semiconductor layer (2). These layers (2, 3, 4) have all been grown epitaxially through an m-plane growth. The n-type dopant concentration in the substrate (7) and n-type semiconductor layer (2) is 1×1018 cm−3 or less. When viewed perpendicularly to the principal surface (7a), a gap of 4 μm or less is left between the anode and cathode electrode layers (5, 6) and the anode electrode layer (5) is arranged at a distance of 45 μm or less from an edge of the cathode electrode layer (6) that faces the anode electrode layer (5).
摘要翻译：本发明的发光二极管元件包括：主面（7a）为m面的n型GaN衬底（7）; 以及在基板（7）的主表面（7a）上的多层结构，其包括n型半导体层（2），在n的上表面的第一区域（2a）上的有源层（3）型半导体层（2），p型半导体层（4），阳极电极层（5）以及在n型上表面的第二区域（2b）上的阴极电极层半导体层（2）。这些层（2,3,4）全部通过m平面生长而外延生长。基板（7）和n型半导体层（2）中的n型掺杂剂浓度为1×1018cm -3以下。当垂直于主表面（7a）观察时，在阳极和阴极电极层（5,6）之间留下4μm或更小的间隙，并且阳极电极层（5）被布置在45μm或更小的距离处从所述阴极电极层（6）的与所述阳极电极层（5）相对的边缘。

37. 发明授权

US08124986B2 Nitride-based semiconductor device and method for fabricating the same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US08124986B2
公开(公告)日：2012-02-28
申请号：US13124162
申请日：2010-09-21
申请人： Naomi Anzue , Toshiya Yokogawa
发明人： Naomi Anzue , Toshiya Yokogawa
IPC分类号： H01L33/36
CPC分类号： H01L29/452 , H01L21/28575 , H01L24/14 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32 , H01L33/40 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and the electrode contains Mg, Zn and Ag.
摘要翻译：氮化物类半导体器件包括：包含p型半导体区域的氮化物基半导体多层结构，p型半导体区域的表面是m面; 和配置在p型半导体区域上的电极，其中p型半导体区域由Al x Ga y In z N半导体（其中x + y + z = 1，x≥0，y≥0，z≥0），电极含有Mg，Zn和Ag。

38. 发明申请

US20110297956A1 METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：制造氮化镓化合物半导体的方法和半导体发光元件
公开(公告)号：US20110297956A1
公开(公告)日：2011-12-08
申请号：US13201938
申请日：2009-10-21
申请人： Ryou Kato , Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
发明人： Ryou Kato , Masaki Fujikane , Akira Inoue , Toshiya Yokogawa
IPC分类号： H01L33/02
CPC分类号： C23C16/303 , C30B25/02 , C30B29/403 , H01L33/007
摘要： The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an InxGa1-xN crystal on the substrate at a growth temperature from 700° C. to 775° C. is performed. In step (B), the growth rate of the m-plane InGaN layer is set in a range from 4.5 nm/min to 10 nm/min.
摘要翻译：本发明是一种制造氮化镓系化合物半导体的方法，包括通过金属有机化学气相沉积生长发光峰值波长不小于500nm的m面InGaN层。首先，进行在反应器中加热基板的工序（A）。然后，向反应器供给包含In源气体，Ga源气体和N源气体的气体的步骤（B），并在生长中在衬底上生长In x Ga 1-x N晶体的m面InGaN层进行从700℃到775℃的温度。在步骤（B）中，将m面InGaN层的生长速度设定在4.5nm / min〜10nm / min的范围内。

39. 发明申请

US20110037088A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20110037088A1
公开(公告)日：2011-02-17
申请号：US12937756
申请日：2010-03-17
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L33/40 , H01L29/20 , H01L21/20
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触半导体多层结构20。

40. 发明申请

US20110031522A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20110031522A1
公开(公告)日：2011-02-10
申请号：US12936960
申请日：2010-03-09
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Ryou Kato
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Ryou Kato
IPC分类号： H01L33/30 , H01L33/44 , H01L21/28 , H01L29/20
CPC分类号： H01L33/40 , H01L33/16 , H01L33/32 , H01L2933/0016 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光器件100包括其主表面是m面12的GaN衬底10，已经形成在GaN基衬底10的m面12上的半导体多层结构20 以及布置在半导体多层结构20上的电极30.电极30包括由Mg和选自Pt，Mo和Pd的金属形成的Mg合金层32。 Mg合金层32与半导体多层结构体20的p型半导体区域的表面接触。

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