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31. 发明申请

US20110042653A1 Near-Infrared Absorbing Film Compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US20110042653A1
公开(公告)日：2011-02-24
申请号：US12543003
申请日：2009-08-18
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： H01L51/46 , G03F7/004 , G03F7/20 , H01L31/02
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

32. 发明授权

US08772376B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08772376B2
公开(公告)日：2014-07-08
申请号：US12542970
申请日：2009-08-18
申请人： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
发明人： Wu-Song Huang , Martin Glodde , Dario L. Goldfarb , Wai-Kin Li , Sen Liu , Libor Vyklicky
IPC分类号： C09D163/00 , C08L63/00 , C08K5/00 , B32B27/20 , B32B27/38 , C08G59/32 , C08G59/68 , G02B5/22
CPC分类号： G03F7/0388 , G03F7/038 , G03F7/091 , G03F7/11 , H01L51/447
摘要： A curable liquid formulation comprising: (i) one or more near-infrared absorbing polymethine dyes; (ii) one or more crosslinkable polymers; and (iii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：一种可固化液体制剂，其包含：（i）一种或多种近红外吸收聚甲炔染料; （ii）一种或多种可交联聚合物; 和（iii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

33. 发明授权

US08586283B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08586283B2
公开(公告)日：2013-11-19
申请号：US13608409
申请日：2012-09-10
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

34. 发明申请

US20120178027A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS 有权
标题翻译：多次曝光光刻法
公开(公告)号：US20120178027A1
公开(公告)日：2012-07-12
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method. The method forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一个方法。该方法在衬底上形成光致抗蚀剂组合物的膜，并分别通过具有第一和第二图像图案的第一和第二掩模使膜的第一和第二区域暴露于辐射。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

35. 发明申请

US20130040238A1 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS 有权
标题翻译：可开发的底部抗反射涂层组合物
公开(公告)号：US20130040238A1
公开(公告)日：2013-02-14
申请号：US13206796
申请日：2011-08-10
申请人： KUANG-JUNG CHEN , Steven J. Holmes , Wu-Song Huang , Sen Liu
发明人： KUANG-JUNG CHEN , Steven J. Holmes , Wu-Song Huang , Sen Liu
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

36. 发明授权

US08236476B2 Multiple exposure photolithography methods and photoresist compositions 有权
标题翻译：多重曝光光刻方法和光致抗蚀剂组合物
公开(公告)号：US08236476B2
公开(公告)日：2012-08-07
申请号：US11970761
申请日：2008-01-08
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition are provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：提供了一种方法和组合物。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

37. 发明授权

US08846296B2 Photoresist compositions 有权
标题翻译：光刻胶组合物
公开(公告)号：US08846296B2
公开(公告)日：2014-09-30
申请号：US13461960
申请日：2012-05-02
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A composition is provided. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than the first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. The photosensitive base generator may include benzoin carbamates, O-carbamoylhydroxylamines, O-carbamoyloximes, aromatic sulfonamides, α-lactones, N-(2-Arylethenyl)amides, azides, amides, oximines, quaternary ammonium salts, or amineimides.
摘要翻译：提供了组合物。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。光敏基底产生剂可以包括安息香氨基甲酸酯，O-氨基甲酰羟基胺，O-氨基甲酰肟，芳族磺酰胺，α-内酯，N-（2-亚乙烯基）酰胺，叠氮化物，酰胺，肟，季铵盐或胺酰胺。

38. 发明授权

US08715907B2 Developable bottom antireflective coating compositions for negative resists 有权
标题翻译：用于负性抗蚀剂的可开发的底部抗反射涂料组合物
公开(公告)号：US08715907B2
公开(公告)日：2014-05-06
申请号：US13206796
申请日：2011-08-10
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Sen Liu
IPC分类号： G03F7/09 , G03F7/11 , G03F7/30
CPC分类号： G03F7/0382 , C09J133/14 , G03F7/091 , G03F7/094 , G03F7/095
摘要： A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.
摘要翻译：负显影底部抗反射涂层（NDBARC）材料包括含有脂族醇部分，芳族部分和羧酸部分的聚合物。 NDBARC组合物在涂布和烘烤后不溶于典型的抗蚀剂溶剂如丙二醇甲基醚乙酸酯（PGMEA）。 NDBARC材料还包括光致酸发生剂和任选的交联化合物。在NDBARC材料中，羧酸提供了显影剂的溶解度，而单独的醇，单独的羧酸或它们的组合提供了PGMEA的抗性。 NDBARC材料对抗蚀剂溶剂具有抗性，因此在NDBARC的抗蚀涂层期间，NDBARC和抗蚀剂之间不会发生混合。在曝光和烘烤之后，由于在光刻曝光部分中的负光刻胶和NDBARC层中的聚合物的化学扩展交联，负光致抗蚀剂和NDBARC层的光刻曝光部分变得不溶于显影剂。

39. 发明申请

US20140004712A1 DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF 有权
标题翻译：可开发的底部抗反射涂料组合物及其使用的图案形成方法
公开(公告)号：US20140004712A1
公开(公告)日：2014-01-02
申请号：US13537177
申请日：2012-06-29
申请人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
发明人： Kuang-Jung Chen , Steven J. Holmes , Wu-Song Huang , Ranee Kwong , Sen Liu
IPC分类号： G03F7/20 , H01L21/265 , C09K3/00
CPC分类号： G03F7/11 , C08F220/26 , C08L33/066 , C08L33/16 , C08L2312/00 , C09D133/066 , G03F7/0046 , G03F7/038 , G03F7/0392 , G03F7/0397 , G03F7/091 , G03F7/30 , G03F7/322 , G03F7/40 , H01L21/0274 , H01L21/0276 , H01L21/265 , C08L2205/025
摘要： The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.
摘要翻译：本发明涉及一种可显影底部抗反射涂层（BARC）组合物和使用该BARC组合物的图案形成方法。 BARC组合物包括具有第一羧酸部分，含羟基脂环族部分和第一发色团部分的第一聚合物; 具有第二羧酸部分的第二聚合物，含羟基的无环部分和第二发色团部分; 交联剂; 和辐射敏感酸发生器。第一和第二发色团部分各自吸收波长从100nm到400nm的光。在图案形成方法中，在BARC组合物的BARC层上形成光致抗蚀剂层。曝光后，通过显影剂选择性地除去光致抗蚀剂层和BARC层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 BARC组合物和图案形成方法对于植入水平特别有用。

40. 发明授权

US08568960B2 Multiple exposure photolithography methods 有权
标题翻译：多曝光光刻法
公开(公告)号：US08568960B2
公开(公告)日：2013-10-29
申请号：US13418421
申请日：2012-03-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/26 , G03F7/40
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method that forms a film of photoresist composition on a substrate and exposes a first and second region of the film to radiation through a first and second mask having a first and second image pattern, respectively. The photoresist composition includes a polymer including labile group(s), base soluble group(s), a photosensitive acid generator, and a photosensitive base generator. The photosensitive acid generator generates first and second amounts of acid upon exposure to first and second doses of radiation, respectively. The second amount of acid exceeds the first amount of acid. The second dose of radiation exceeds the first dose of radiation. The photosensitive base generator generates a first and second amount of base upon exposure to the first and second dose of radiation, respectively. The first amount of base exceeds the first amount of acid. The second amount of acid exceeds the second amount of base.
摘要翻译：一种在衬底上形成光致抗蚀剂组合物的膜并将膜的第一和第二区分别暴露于具有第一和第二图像图案的第一和第二掩模的辐射的方法。光致抗蚀剂组合物包括包含不稳定基团，碱溶性基团，光敏酸发生剂和感光基底发生剂的聚合物。感光酸发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的酸。第二量的酸超过第一量的酸。第二剂辐射超过第一剂量的辐射。光敏底物发生器分别在暴露于第一和第二剂量的辐射时产生第一和第二量的碱。碱的第一量超过第一量的酸。第二量的酸超过第二量的碱。

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