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31. 发明授权

US08623511B2 Sputtering target for oxide thin film and process for producing the sputtering target 有权
标题翻译：氧化物薄膜的溅射靶和溅射靶的制造方法
公开(公告)号：US08623511B2
公开(公告)日：2014-01-07
申请号：US12996598
申请日：2009-06-05
申请人： Hirokazu Kawashima , Koki Yano , Futoshi Utsuno , Kazuyoshi Inoue
发明人： Hirokazu Kawashima , Koki Yano , Futoshi Utsuno , Kazuyoshi Inoue
IPC分类号： B32B33/00
CPC分类号： H01L21/02565 , C04B35/01 , C04B35/453 , C04B35/6262 , C04B35/62655 , C04B35/62695 , C04B37/026 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/40 , C04B2235/5409 , C04B2235/5436 , C04B2235/6027 , C04B2235/652 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/6586 , C04B2235/661 , C04B2235/76 , C04B2235/761 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/963 , C04B2235/9661 , C04B2237/12 , C04B2237/34 , C04B2237/407 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02631 , H01L29/7869 , Y10T428/31507
摘要： Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)
摘要翻译：公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。铟（In），镓（Ga）和锌（Zn）的成分量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75。

32. 发明授权

US10644163B2 Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms 有权
公开(公告)号：US10644163B2
公开(公告)日：2020-05-05
申请号：US13060699
申请日：2009-08-26
申请人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
发明人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
IPC分类号： H01L29/786 , C23C14/34 , C23C14/16 , C22C30/04 , C22C30/06 , H01L29/66 , H01L21/02 , H01L27/12
CPC分类号： H01L29/7869 , C22C30/04 , C22C30/06 , C23C14/165 , C23C14/3407 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/78606 , H01L29/78609 , H01L29/78633 , H01L29/78693 , H01L27/1225
摘要： A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

33. 发明申请

US20110168994A1 SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET 有权
标题翻译：用于氧化物薄膜的溅射靶和用于生产溅射靶的工艺
公开(公告)号：US20110168994A1
公开(公告)日：2011-07-14
申请号：US12996598
申请日：2009-06-05
申请人： Hirokazu Kawashima , Koki Yano , Futoshi Utsuno , Kazuyoshi Inoue
发明人： Hirokazu Kawashima , Koki Yano , Futoshi Utsuno , Kazuyoshi Inoue
IPC分类号： H01L29/786 , H01L21/42 , C23C14/08 , C23C14/34 , C04B35/64 , H01B1/02
CPC分类号： H01L21/02565 , C04B35/01 , C04B35/453 , C04B35/6262 , C04B35/62655 , C04B35/62695 , C04B37/026 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/40 , C04B2235/5409 , C04B2235/5436 , C04B2235/6027 , C04B2235/652 , C04B2235/656 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/6586 , C04B2235/661 , C04B2235/76 , C04B2235/761 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C04B2235/963 , C04B2235/9661 , C04B2237/12 , C04B2237/34 , C04B2237/407 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02631 , H01L29/7869 , Y10T428/31507
摘要： Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)
摘要翻译：公开了一种溅射靶，其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生，并且可以连续且稳定地形成膜。还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面（在溅射靶的表面上形成的凹凸等差的外观）的溅射靶的氧化物。进一步公开了具有双相结构并含有氧化铟，氧化镓和氧化锌的氧化物烧结体。铟（In），镓（Ga）和锌（Zn）的组成量（原子％）落在满足下式的组成范围内：In /（In + Ga + Zn）<0.75

34. 发明授权

US08455371B2 Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor 有权
公开(公告)号：US08455371B2
公开(公告)日：2013-06-04
申请号：US12993946
申请日：2009-05-22
申请人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
发明人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
IPC分类号： H01L21/31 , C23C14/34 , C04B35/64
CPC分类号： H01L29/24 , B82Y30/00 , C04B35/2675 , C04B35/44 , C04B35/453 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/3244 , C04B2235/3272 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/40 , C04B2235/404 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/666 , C04B2235/725 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L29/66969 , H01L29/7869 , Y10T428/24355
摘要： Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.

35. 发明申请

US20110240988A1 FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SPUTTERING TARGET 审中-公开
标题翻译：场效应晶体管，其制造方法和溅射目标
公开(公告)号：US20110240988A1
公开(公告)日：2011-10-06
申请号：US13060699
申请日：2009-08-26
申请人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
发明人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
IPC分类号： H01L29/786 , H01L21/36 , H01L29/22 , C23C14/08
CPC分类号： C23C14/3407 , C22C30/04 , C22C30/06 , C23C14/165 , C23F1/20 , H01L29/66969 , H01L29/78606 , H01L29/78609 , H01L29/78633 , H01L29/7869
摘要： A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.
摘要翻译：一种场效应晶体管，包括：衬底，至少栅电极，栅极绝缘膜，半导体层，用于半导体层的保护层，设置在衬底上的源电极和漏电极，其中源电极和漏电极与其间的半导体层连接，栅极绝缘膜位于栅电极和半导体层之间，保护层位于半导体层的至少一个表面上，半导体层包括含有In原子的氧化物，Sn原子和Zn原子，Zn /（In + Sn + Zn）的原子组成比为25原子％以上且75原子％以下，Sn /（In + Sn + Zn）的原子组成比小于50 原子％。

36. 发明申请

US20110177696A1 SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：溅射目标，使用其形成非晶氧化物薄膜的方法以及制造薄膜晶体管的方法
公开(公告)号：US20110177696A1
公开(公告)日：2011-07-21
申请号：US12993946
申请日：2009-05-22
申请人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
发明人： Koki Yano , Hirokazu Kawashima , Kazuyoshi Inoue
IPC分类号： H01L21/31 , C23C14/34 , C04B35/64
CPC分类号： H01L29/24 , B82Y30/00 , C04B35/2675 , C04B35/44 , C04B35/453 , C04B35/645 , C04B2235/3217 , C04B2235/3224 , C04B2235/3244 , C04B2235/3272 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/40 , C04B2235/404 , C04B2235/5409 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/666 , C04B2235/725 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L29/66969 , H01L29/7869 , Y10T428/24355
摘要： Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.
摘要翻译：公开了具有良好外观的溅射靶，其表面上没有白点。溅射靶的特征在于由含有两种以上同种晶体结构的氧化物烧结体构成。

37. 发明申请

US20080239217A1 Semi-Transmissive/Semi-Reflective Electrode Substrate, Method for Manufacturing Same, and Liquid Crystal Display Using Such Semi-Transmissive/Semi-Reflective Electrode Substrate 失效
标题翻译：半透射/半反射电极基板，其制造方法和使用这种半透射/半反射电极基板的液晶显示器
公开(公告)号：US20080239217A1
公开(公告)日：2008-10-02
申请号：US10591529
申请日：2005-02-18
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/1343 , H01L23/48 , H01L21/28
CPC分类号： G02F1/13439 , G02F1/133555
摘要： Provided are a semi-transmitting and semi-reflecting electrode substrate provided with a transparent conductive layer which is almost free from the generation of residues caused by etching and is resistant to an etchant for a metal reflecting layer (metal layer), a method of producing the semi-transmitting and semi-reflecting electrode substrate and a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. Specifically, the invention relates a semi-transmitting and semi-reflecting electrode substrate comprising a transparent substrate, a transparent conductive layer which is disposed on the transparent substrate and contains indium oxide as its major component and further one or two or more oxides selected from tungsten oxide, molybdenum oxide and niobium oxide and a metal reflecting layer which is disposed on the transparent substrate, reflects extraneous light and is connected with the transparent conductive layer, to a method producing the semi-transmitting and semi-reflecting electrode substrate and to a liquid crystal display device using the semi-transmitting and semi-reflecting electrode substrate. This semi-transmitting and semi-reflecting electrode substrate is almost free from the generation of residues, has high processability and improves the yield.
摘要翻译：提供一种具有透明导电层的半透射半反射电极基板，其几乎不会产生由蚀刻引起的残留物，并且耐金属反射层（金属层）的蚀刻剂，制造方法半透射半反射电极基板和使用半透射半反射电极基板的液晶显示装置。具体地说，本发明涉及一种半透射半反射电极基板，其包括透明基板，透明导电层，其设置在透明基板上并且包含氧化铟作为其主要成分，还有一种或两种以上选自钨氧化物，氧化钼和铌氧化物以及设置在透明基板上的金属反射层，反射外部光并与透明导电层连接，制造半透射半反射电极基板和液体的方法使用半透射和半反射电极基板的晶体显示装置。这种半透射和半反射电极基质几乎没有残留物的产生，具有高加工性和提高产率。

38. 发明授权

US08773628B2 Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes 有权
标题翻译：薄膜晶体管，薄膜晶体管基板，其制造方法，使用其的液晶显示器及相关的装置和工艺; 和溅射靶，使用该透明电极形成的透明导电膜，以及相关的器件和工艺
公开(公告)号：US08773628B2
公开(公告)日：2014-07-08
申请号：US13219814
申请日：2011-08-29
申请人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
发明人： Kazuyoshi Inoue , Shigekazu Tomai , Masato Matsubara
IPC分类号： G02F1/1343
CPC分类号： H01L29/78696 , C04B35/01 , C04B2235/3224 , C04B2235/3227 , C04B2235/3229 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3287 , C04B2235/3289 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C23C14/08 , C23C14/3414 , G02F1/13439 , G02F1/136227 , G02F1/1368 , H01L23/53219 , H01L23/53247 , H01L27/12 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： Provided are thin film transistor substrates, thin film transistor liquid crystal displays, thin film transistors, TFT substrates for liquid crystal displays, liquid crystal displays provided with TFT substrates and liquid crystals, pixel electrodes for driving a liquid crystals, and transparent electrodes, an processes for the preparation thereof.
摘要翻译：本发明提供薄膜晶体管基板，薄膜晶体管液晶显示器，薄膜晶体管，液晶显示器用TFT基板，TFT基板和液晶的液晶显示器，驱动液晶的像素电极和透明电极，用于制备。

39. 发明申请

US20090267030A1 SINTERED BODY FOR VACUUM VAPOR DEPOSITION 审中-公开
标题翻译：用于真空蒸发沉积的烧结体
公开(公告)号：US20090267030A1
公开(公告)日：2009-10-29
申请号：US12096925
申请日：2006-11-13
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Masahiko Fukuda
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Masahiko Fukuda
IPC分类号： H01B1/08
CPC分类号： C23C14/086 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/6262 , C04B35/62695 , C04B2235/3206 , C04B2235/3284 , C04B2235/3286 , C04B2235/5436 , C04B2235/5445 , C04B2235/6585 , C04B2235/72 , C04B2235/767 , C04B2235/77 , C04B2235/786 , C04B2235/96 , C04B2235/963 , C04B2235/9653 , C23C14/30
摘要： A sintered body for vacuum vapor deposition, the sintered body being a sintered body of an oxide containing at least one cation element; the cation element having an electronegativity of 1.5 or more; and the sintered body having a surface roughness of 3 μm or less and a bulk resistance of less than 1×10−1 Ω·cm.
摘要翻译：一种用于真空气相沉积的烧结体，所述烧结体是包含至少一种阳离子元素的氧化物的烧结体; 所述阳离子元素的电负性为1.5以上; 烧结体的表面粗糙度为3μm以下，体积电阻小于1×10 -1Ω·cm。

40. 发明申请

US20090066228A1 ORGANIC ELECTROLUMINESCENCE ELEMENT 审中-公开
标题翻译：有机电致发光元件
公开(公告)号：US20090066228A1
公开(公告)日：2009-03-12
申请号：US11913272
申请日：2006-05-08
申请人： Shigekazu Tomai , Kazuyoshi Inoue , Hitoshi Kuma
发明人： Shigekazu Tomai , Kazuyoshi Inoue , Hitoshi Kuma
IPC分类号： H01J1/62
CPC分类号： H01L51/5278 , H01L51/5262
摘要： An organic electroluminescent device (1) including: a transparent electrode (12); a counter electrode (14) opposite to the transparent electrode (12); and one or more multilayered structures between the transparent electrode (12) and the counter electrode (14), the structure including two organic emitting layers (20) and (22) and an intermediate conductive layer (30) between the organic emitting layers (20) and (22), the refractive index na of the intermediate conductive layer (30) being different from the refractive index nb of at least one of the organic emitting layers by 0.25 or less, the intermediate conductive layer (30) containing an oxide containing one or more types of rare earth elements.
摘要翻译：一种有机电致发光器件（1），包括：透明电极（12）; 与所述透明电极（12）相对的对置电极（14）。以及在所述透明电极（12）和所述对电极（14）之间的一个或多个多层结构，所述结构包括在所述有机发射层（20）和所述有机发射层（20）之间的两个有机发光层（20）和（22）以及中间导电层）和（22），所述中间导电层（30）的折射率na与所述有机发光层中的至少一个的折射率nb不同，所述中间导电层（30）含有含有一种或多种类型的稀土元素。

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