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    • 34. 发明授权
    • Gas-sensitive field-effect transistor with air gap
    • 具有气隙的气敏场效应晶体管
    • US07459732B2
    • 2008-12-02
    • US11396243
    • 2006-03-31
    • Maximilian FleischerUwe LampeHans MeixnerRoland PohleRalf SchneiderElfriede Simon
    • Maximilian FleischerUwe LampeHans MeixnerRoland PohleRalf SchneiderElfriede Simon
    • H01L27/108
    • G01N27/002G01N27/414
    • A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
    • 气体敏感场效应晶体管可以由具有气体敏感层的衬底和分开处理的晶体管形成,然后组装。 衬底可以被图案化以形成间隔物,通过该间隔物,晶体管和敏感层之间的气隙的高度可以相对精确地调节。 可以通过使用材料去除技术对衬底进行图案化来实现间隔物的形成。 间隔物的高度可以在气敏层的层厚度和使用CMOS工艺制造的晶体管中进行调整。 用于在间隔件之间产生凹槽的合适技术包括例如抛光,切割,喷砂,光刻干蚀刻或湿法化学蚀刻。 用于基材的合适材料可以包括例如玻璃,陶瓷,氧化铝,硅或尺寸稳定的聚合物。 在准备衬底和晶体管之后,晶体管的两个元件例如使用倒装芯片方法或粘接技术连接。
    • 36. 发明申请
    • Gas-sensitive field-effect transistor with air gap
    • 具有气隙的气敏场效应晶体管
    • US20060260737A1
    • 2006-11-23
    • US11396243
    • 2006-03-31
    • Maximilian FleischerUwe LampeHans MeixnerRoland PohleRalf SchneiderElfriede Simon
    • Maximilian FleischerUwe LampeHans MeixnerRoland PohleRalf SchneiderElfriede Simon
    • B32B37/00
    • G01N27/002G01N27/414
    • A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer. Following preparation of the substrate and the transistor, the two elements of the transistor are joined, for example, using flip-chip methods or adhesive-bonding technology.
    • 气体敏感场效应晶体管可以由具有气体敏感层的衬底和分开处理的晶体管形成,然后组装。 衬底可以被图案化以形成间隔物,通过该间隔物,晶体管和敏感层之间的气隙的高度可以相对精确地调节。 可以通过使用材料去除技术对衬底进行图案化来实现间隔物的形成。 间隔物的高度可以在气敏层的层厚度和使用CMOS工艺制造的晶体管中进行调整。 用于在间隔件之间产生凹槽的合适技术包括例如抛光,切割,喷砂,光刻干蚀刻或湿法化学蚀刻。 用于基材的合适材料可以包括例如玻璃,陶瓷,氧化铝,硅或尺寸稳定的聚合物。 在准备衬底和晶体管之后,晶体管的两个元件例如使用倒装芯片方法或粘接技术连接。