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    • 34. 发明申请
    • Voltage controlled oscillator
    • 压控振荡器
    • US20060017517A1
    • 2006-01-26
    • US11188326
    • 2005-07-25
    • Takashi OotsukaHisato TakeuchiKeigo Shingu
    • Takashi OotsukaHisato TakeuchiKeigo Shingu
    • H03B5/32
    • H03B5/366H03B5/04H03B2200/0012
    • A voltage controlled oscillator enables controlling the MOS transistor threshold voltage independently of the temperature compensation control signal and external voltage frequency control signal. The voltage controlled oscillator has a crystal oscillator and a load capacitance is parallel connected to a crystal oscillator. The load capacitance includes a first MOS transistor comprising a gate terminal and a source/drain terminal formed by shorting the source and drain, and a second MOS transistor comprising a gate terminal and a source/drain terminal formed by shorting the source and drain. First and second control signal generating circuits supply respective control signals to the source/drain terminals and gate terminals of the first and second MOS transistors.
    • 压控振荡器能够独立于温度补偿控制信号和外部电压频率控制信号来控制MOS晶体管阈值电压。 压控振荡器具有晶体振荡器,并且负载电容并联连接到晶体振荡器。 负载电容包括第一MOS晶体管,其包括通过使源极和漏极短路而形成的栅极端子和源极/漏极端子,以及包括通过短路源极和漏极形成的栅极端子和源极/漏极端子的第二MOS晶体管。 第一和第二控制信号发生电路向第一和第二MOS晶体管的源极/漏极端子和栅极端子提供相应的控制信号。
    • 35. 发明申请
    • Voltage controlled oscillator
    • 压控振荡器
    • US20060012445A1
    • 2006-01-19
    • US11181129
    • 2005-07-14
    • Hisato TakeuchiKeigo ShinguTakashi Ootsuka
    • Hisato TakeuchiKeigo ShinguTakashi Ootsuka
    • H03B5/32
    • H03L1/022H03B5/36H03K3/011H03K3/0307H03L1/023H03L1/028H03L7/099
    • In a voltage controlled oscillator including an amplifier, a feedback circuit and a crystal oscillator, two MOS transistors M1, M2 are connected for use as variable capacity elements for the frequency adjustment of the voltage controlled oscillator. Drains of the MOS transistors M1, M2 are respectively connected to an XT terminal and an XTB terminal of the crystal oscillator. Sources of the MOS transistors M1, M2 are made common and connected to a grounding terminal via a capacitor C3. Gates of the MOS transistors M1, M2 are made common, and an added voltage signal of a temperature compensating signal voltage and an external frequency control signal voltage is applied to the common gate terminals of the MOS transistors to thereby perform the frequency control of the oscillator.
    • 在包括放大器,反馈电路和晶体振荡器的压控振荡器中,两个MOS晶体管M 1,M 2连接用作用于压控振荡器的频率调整的可变电容元件。 MOS晶体管M 1,M 2的漏极分别连接到晶体振荡器的XT端子和XTB端子。 MOS晶体管M 1,M 2的源极共同,并通过电容器C 3连接到接地端子。 MOS晶体管M 1,M 2的栅极共同,并且将温度补偿信号电压和外部频率控制信号电压的附加电压信号施加到MOS晶体管的公共栅极端子,从而执行频率控制 振荡器。