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    • 35. 发明申请
    • Upright vacuum cleaner
    • 直立吸尘器
    • US20070095029A1
    • 2007-05-03
    • US11260685
    • 2005-10-28
    • Young MinJae Kim
    • Young MinJae Kim
    • B01D45/12
    • A47L9/1625A47L9/122A47L9/1641A47L9/1666
    • A vacuum cleaner includes a nozzle section, a cleaner body coupled to the nozzle section and being in fluid communication with the nozzle section, a dust collecting container operatively coupled with the cleaner body, a primary cyclone, a secondary cyclone, a discharge member arranged in the primary cyclone and a floatation prevention member. The primary cyclone and at least one secondary cyclone separate dust and dirt from a suction airflow flowing into the dust collecting container. The floatation prevention member is attached to an underside of the discharge member for preventing swirling airflow in the dust collecting container.
    • 真空吸尘器包括喷嘴部分,联接到喷嘴部分并与喷嘴部分流体连通的吸尘器主体,与吸尘器主体操作耦合的集尘容器,主旋风分离器,次旋风器,排放构件 主旋风分离器和防浮浮部件。 主旋风分离器和至少一个次级旋风分离器将灰尘和污物从流入集尘容器的吸入空气中分离出来。 防浮浮部件安装在排出部件的下侧,用于防止集尘容器内的旋转气流。
    • 40. 发明申请
    • Method of manufacturing flash memory device
    • 制造闪存设备的方法
    • US20070059884A1
    • 2007-03-15
    • US11454594
    • 2006-06-16
    • Jae Kim
    • Jae Kim
    • H01L21/336H01L21/3205
    • H01L27/11521
    • The invention provides a method of manufacturing a flash memory device. Nitride film spacers are formed on sidewalls of protruded isolation films. A recess is formed in a semiconductor substrate by a self-aligned etch process using the nitride film spacers as masks. It is therefore possible to form a uniform recess over the entire wafer. Furthermore, a floating gate is formed on the semiconductor substrate including the recess in a self-aligned manner. Accordingly, a contact area between the floating gate and the semiconductor substrate can be increased as large as a recess surface area.
    • 本发明提供一种制造闪速存储器件的方法。 在突出隔离膜的侧壁上形成氮化物膜间隔物。 通过使用氮化物膜间隔物作为掩模的自对准蚀刻工艺在半导体衬底中形成凹部。 因此,可以在整个晶片上形成均匀的凹部。 此外,浮动栅极以自对准的方式形成在包括凹部的半导体衬底上。 因此,浮动栅极和半导体衬底之间的接触面积可以增加到凹陷表面积的大。