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31. 发明申请

US20100129982A1 INTEGRATION SEQUENCES WITH TOP SURFACE PROFILE MODIFICATION 失效
标题翻译：具有顶部表面轮廓修改的集成序列
公开(公告)号：US20100129982A1
公开(公告)日：2010-05-27
申请号：US12620806
申请日：2009-11-18
申请人： Chien-Teh Kao , Xinliang Lu , Zhenbin Ge , Mei Chang , Hoiman Raymond Hung , Nitin Ingle
发明人： Chien-Teh Kao , Xinliang Lu , Zhenbin Ge , Mei Chang , Hoiman Raymond Hung , Nitin Ingle
IPC分类号： H01L21/28 , H01L21/762
CPC分类号： H01L21/76232 , H01L21/67219 , H01L27/11521
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。特别地，本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆，在填充的沟槽结构中形成凹陷。通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

32. 发明申请

US20060005856A1 Reduction of reactive gas attack on substrate heater 审中-公开
标题翻译：减少基板加热器的反应气体攻击
公开(公告)号：US20060005856A1
公开(公告)日：2006-01-12
申请号：US10882129
申请日：2004-06-29
申请人： David Sun , Keith Harvey , Nitin Ingle , Karthik Janakiraman
发明人： David Sun , Keith Harvey , Nitin Ingle , Karthik Janakiraman
IPC分类号： C25F3/12 , C23F1/00
CPC分类号： H01J37/32477 , B08B7/0035 , C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： Embodiments of the present invention provide a method of reducing damage to the substrate support by the cleaning gas during a cleaning process of the processing chamber, such as by reducing aluminum fluoride formation on the substrate support. In one embodiment, a method of cleaning a semiconductor process chamber which is used for processing a substrate disposed on a surface of a substrate support comprises introducing a cleaning gas into a process chamber through an inlet facing a surface of a substrate support. The inlet is spaced from the surface of the substrate support by a clean spacing. Reactive species are provided from the cleaning gas to clean the process chamber. The clean spacing is substantially greater than a process spacing between the inlet and the surface of the substrate support during processing of a substrate on the substrate support in the process chamber.
摘要翻译：本发明的实施例提供了一种在处理室的清洁处理期间减少由清洁气体对基板支撑件的损害的方法，例如通过减少基板支撑件上的氟化铝形成。在一个实施例中，清洁用于处理设置在基板支撑件的表面上的基板的半导体处理室的方法包括通过面向基板支撑件的表面的入口将清洁气体引入处理室。入口与衬底支撑件的表面间隔一定距离。从清洁气体提供活性物质以清洁处理室。在处理处理室中的衬底支撑件上的衬底的处理期间，清洁间距明显大于衬底支撑件的入口和表面之间的工艺间隔。

33. 发明授权

US09064815B2 Methods for etch of metal and metal-oxide films 有权
标题翻译：金属和金属氧化物膜的蚀刻方法
公开(公告)号：US09064815B2
公开(公告)日：2015-06-23
申请号：US13416223
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , H01L21/311 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

34. 发明授权

US08765573B2 Air gap formation 有权
标题翻译：气隙形成
公开(公告)号：US08765573B2
公开(公告)日：2014-07-01
申请号：US13229673
申请日：2011-09-10
申请人： Abhijit Basu Mallick , Nitin Ingle
发明人： Abhijit Basu Mallick , Nitin Ingle
IPC分类号： H01L21/00 , H01L21/768 , H01L21/02 , H01L21/764
CPC分类号： H01L21/764 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02211 , H01L21/02271 , H01L21/7682 , H01L21/76837 , H01L2221/1047
摘要： A method of forming air gaps between adjacent raised features on a substrate includes forming a carbon-containing material in a bottom region between the adjacent raised features using a flowable deposition process. The method also includes forming a silicon-containing film over the carbon-containing material using a flowable deposition process, where the silicon-containing film fills an upper region between the adjacent raised features and extends over the adjacent raised features. The method also includes curing the carbon-containing material and the silicon-containing material at an elevated temperature for a period of time to form the air gaps between the adjacent raised features.
摘要翻译：在衬底上的相邻凸起特征之间形成气隙的方法包括使用可流动沉积工艺在相邻凸起特征之间的底部区域中形成含碳材料。该方法还包括使用可流动的沉积工艺在含碳材料上形成含硅膜，其中含硅膜填充相邻凸起特征之间的上部区域并在相邻的凸起特征上延伸。该方法还包括在升高的温度下将含碳材料和含硅材料固化一段时间，以形成相邻凸起特征之间的气隙。

35. 发明授权

US08999856B2 Methods for etch of sin films 有权
标题翻译：蚀刻薄膜的方法
公开(公告)号：US08999856B2
公开(公告)日：2015-04-07
申请号：US13416277
申请日：2012-03-09
申请人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
发明人： Jingchun Zhang , Anchuan Wang , Nitin Ingle
IPC分类号： H01L21/302 , H01L21/311 , H01J37/32
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底中选择性地蚀刻氮化硅的方法包括将含氟气体流入衬底处理室的等离子体产生区域并向含氟气体施加能量以产生等离子体在等离子体产生区域中。等离子体包括氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻氮化硅层蚀刻氧化硅层。

36. 发明授权

US08501629B2 Smooth SiConi etch for silicon-containing films 有权
标题翻译：对含硅膜进行平滑SiConi蚀刻
公开(公告)号：US08501629B2
公开(公告)日：2013-08-06
申请号：US12646030
申请日：2009-12-23
申请人： Jing Tang , Nitin Ingle , Dongqing Yang
发明人： Jing Tang , Nitin Ingle , Dongqing Yang
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3341
摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.
摘要翻译：描述了一种蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有比氟更大或更小的氢流量比的SiConi TM蚀刻。已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率差异。降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConi TM。单独或组合的这些方法中的每一种用于通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

37. 发明授权

US08435902B2 Invertable pattern loading with dry etch 有权
标题翻译：用干蚀刻反转图案加载
公开(公告)号：US08435902B2
公开(公告)日：2013-05-07
申请号：US12959155
申请日：2010-12-02
申请人： Jing Tang , Nitin Ingle , Dongqing Yang , Shankar Venkataraman
发明人： Jing Tang , Nitin Ingle , Dongqing Yang , Shankar Venkataraman
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , C23F3/00
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。该方法包括两个干蚀刻循环。第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

38. 发明申请

US20110230052A1 INVERTABLE PATTERN LOADING WITH DRY ETCH 有权
标题翻译：不可逆图案加载干燥蚀刻
公开(公告)号：US20110230052A1
公开(公告)日：2011-09-22
申请号：US12959155
申请日：2010-12-02
申请人： Jing Tang , Nitin Ingle , Dongqing Yang , Shankar Venkataraman
发明人： Jing Tang , Nitin Ingle , Dongqing Yang , Shankar Venkataraman
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。该方法包括两个干蚀刻循环。第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

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