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31. 发明授权

US07949027B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07949027B2
公开(公告)日：2011-05-24
申请号：US12407822
申请日：2009-03-20
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/1053 , H01S5/2004 , H01S5/343 , H01S5/3436 , H01S2301/18
摘要： A semiconductor laser device includes: an n-type cladding layer; a p-type cladding layer; and an optical waveguide portion disposed between the n-type and p-type cladding layers and including spaced-apart active layers. The optical waveguide portion permits lasing in a crystal growth direction of the active layers in at least three modes, including the fundamental mode and two higher order modes. The number of active layers is equal to or greater than the number of extreme points of the electric field of a particular one of the higher order modes. At least one of the active layers is disposed near each extreme point of the electric field of the particular higher order mode, within the optical waveguide portion.
摘要翻译：半导体激光装置包括：n型包层; p型覆层; 以及设置在n型和p型包覆层之间并且包括间隔开的有源层的光波导部分。光波导部分允许至少三种模式在有源层的晶体生长方向上发光，包括基模和两高阶模。有源层的数量等于或大于特定一个较高阶模式的电场的极值点的数量。在光波导部分内，有源层中的至少一个设置在特定高阶模式的电场的每个极点附近。

32. 发明授权

US07415054B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07415054B2
公开(公告)日：2008-08-19
申请号：US11674727
申请日：2007-02-14
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , H01S5/2004 , H01S5/3211 , H01S5/32308
摘要： A semiconductor laser device includes first and second conductivity type cladding layer side guide layers disposed in direct contact with respective surfaces of an active layer, sandwiching the active layer; and first and second conductivity type cladding layers disposed in direct contact with the first and second conductivity type cladding layer side guide layer, respectively. The first and second conductivity type cladding layer side guide layers are InGaAsP which is lattice-matched to GaAs and have an As composition ratio more than 0 and not exceeding 0.3. The first and second conductivity type cladding layers are AlGaAs, having an Al composition ratio less than 1.0 and at least equal to an Al composition ratio at which refractive index of the AlGaAs is less than the refractive index of the InGaAsP.
摘要翻译：半导体激光器件包括与有源层的各个表面直接接触的第一和第二导电型包覆层引导层，夹持有源层; 以及分别与第一和第二导电型包层侧引导层直接接触设置的第一和第二导电类型的覆层。第一和第二导电型包层侧引导层是与GaAs晶格匹配且具有大于0且不超过0.3的As组成比的InGaAsP。第一和第二导电类型包层是具有Al组成比小于1.0且至少等于AlGaAs的折射率小于InGaAsP的折射率的Al组成比的AlGaAs。

33. 发明授权

US07289546B1 Semiconductor laser having an improved stacked structure 有权
标题翻译：具有改进的堆叠结构的半导体激光器
公开(公告)号：US07289546B1
公开(公告)日：2007-10-30
申请号：US11550841
申请日：2006-10-19
申请人： Kimio Shigihara , Yoshihiko Hanamaki , Kimitaka Shibata , Kazushige Kawasaki
发明人： Kimio Shigihara , Yoshihiko Hanamaki , Kimitaka Shibata , Kazushige Kawasaki
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/2036 , H01S5/2059 , H01S5/3211 , H01S5/34313 , H01S5/34373
摘要： An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (band gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer).
摘要翻译：在n型GaAs衬底上顺序层叠n型第一包层，第一引导层，第一增强层，有源层，第二增强层，第二引导层和p型第二包覆层。第一引导层和第二引导层的厚度为100nm以上。在这种半导体激光器中，使第一引导层的Eg（带隙能量）与有源层的Eg（或第二导向层的Eg与有源层的Eg之间的差）之间的差异第一包层的Eg与有源层的Eg（或第二包层的Eg与活性层的Eg之间的差）的差为0.66倍以下。

34. 发明申请

US20070171948A1 SEMICONDUCTOR LASER HAVING AN IMPROVED STACKED STRUCTURE 有权
标题翻译：具有改进的堆叠结构的半导体激光器
公开(公告)号：US20070171948A1
公开(公告)日：2007-07-26
申请号：US11550841
申请日：2006-10-19
申请人： Kimio Shigihara , Yoshihiko Hanamaki , Kimitaka Shibata , Kazushige Kawasaki
发明人： Kimio Shigihara , Yoshihiko Hanamaki , Kimitaka Shibata , Kazushige Kawasaki
IPC分类号： H01S5/00
CPC分类号： H01S5/20 , B82Y20/00 , H01S5/2004 , H01S5/2036 , H01S5/2059 , H01S5/3211 , H01S5/34313 , H01S5/34373
摘要： An n-type first cladding layer, a first guide layer, a first enhancing layer, an active layer, a second enhancing layer, a second guide layer, and a p-type second cladding layer are sequentially stacked on an n-type GaAs substrate. The thickness of each of the first guide layer and the second guide layer is 100 nm or more. In such a semiconductor laser, the difference between the Eg (and gap energy) of the first guide layer and the Eg of the active layer (or the difference between the Eg of the second guide layer and the Eg of the active layer) is made 0.66 times or less of the difference between the Eg of the first cladding layer and the Eg of the active layer (or the difference between the Eg of the second cladding layer and the Eg of the active layer).
摘要翻译：在n型GaAs衬底上顺序层叠n型第一包层，第一引导层，第一增强层，有源层，第二增强层，第二引导层和p型第二包覆层。第一引导层和第二引导层的厚度为100nm以上。在这种半导体激光器中，使第一引导层的Eg（和间隙能量）与有源层的Eg（或第二引导层的Eg与有源层的Eg之间的差）之间的差异第一包层的Eg与有源层的Eg（或第二包层的Eg与活性层的Eg之间的差）的差为0.66倍以下。

35. 发明申请

US20070009001A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20070009001A1
公开(公告)日：2007-01-11
申请号：US11396771
申请日：2006-04-04
申请人： Kimio Shigihara , Yoshihiko Hanamaki
发明人： Kimio Shigihara , Yoshihiko Hanamaki
IPC分类号： H01S5/00
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/2004 , H01S5/2063 , H01S5/22 , H01S5/2231 , H01S5/3434 , H01S5/3436 , H01S5/4031 , H01S2302/00
摘要： A semiconductor laser device includes: on an n-GaAs substrate, an n-type cladding layer of n-(Al0.3Ga0.7)0.5In1.5P, an n-side guide layer of i-In0.49Ga0.51P lattice-matched to GaAs, an active layer having a larger refractive index than the n-side guide layer, and including an In0.07Ga0.93As quantum well layer, a p-side guide layer of i-In0.49Ga0.51P, and a p-type cladding layer of p-(Al0.3Ga0.7)0.5In0.5P. Therefore, the anti-COD level increased, and internal loss minimized.
摘要翻译：一种半导体激光器件包括：在n-GaAs衬底上的n-（Al 0.3 N 0.7 Ga 0.5 N）的n型覆层，在1.5“P中，与GaAs晶格匹配的i-In 0.49 Ga 0.51 P p的n侧引导层，具有具有比n侧引导层更大的折射率，并且包括In量子阱层，i-In <！ - SIPO - >子层的p侧引导层， 0.49 0.51 P，以及p型（Al 0.3 Ga 0.7 N）0.5的p型包覆层 0.5 P。因此，抗COD水平提高，内部损失最小化。

36. 发明申请

US20050047464A1 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US20050047464A1
公开(公告)日：2005-03-03
申请号：US10866696
申请日：2004-06-15
申请人： Kimio Shigihara , Kazushige Kawasaki
发明人： Kimio Shigihara , Kazushige Kawasaki
IPC分类号： H01S5/028 , H01S5/00 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/2231 , H01S5/34313
摘要： A semiconductor laser device comprises an active layer, a cladding layer, an end face for emitting light. A low-reflective film is provided on the end face. The reflectance of the low-reflective film changes with wavelength. A wavelength at which the reference of the low-reflective film is minimized is on the long wavelength side of a wavelength at which the gain of the semiconductor laser device is maximized. The gain and the loss of the semiconductor laser device become equal at a wavelength only in a wavelength region in which the reflectance of the low-reflective film decreases with increasing wavelength. The reflectance of the low-reflective film is preferably set to 1% or less at the wavelength at which the gain of the semiconductor laser device is maximized.
摘要翻译：半导体激光装置包括有源层，包覆层，用于发光的端面。在端面设有低反射膜。低反射膜的反射率随波长而变化。将低反射膜的基准值最小化的波长在半导体激光器件的增益最大化的波长的长波长侧。只有在低反射膜的反射率随着波长的增加而减小的波长区域中，半导体激光器件的增益和损耗在波长处变得相等。在半导体激光器件的增益最大的波长处，低反射膜的反射率优选设定为1％以下。

37. 发明授权

US06804282B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06804282B2
公开(公告)日：2004-10-12
申请号：US10359125
申请日：2003-02-06
申请人： Kimio Shigihara , Kazushige Kawasaki
发明人： Kimio Shigihara , Kazushige Kawasaki
IPC分类号： H01S3113
CPC分类号： H01S5/028 , H01S5/0287
摘要： A multilayer film includes alternately laminated, a first film with a refractive index of n1 and a second film with a refractive index of n2, the multilayer film having the first film in contact with an end face of a semiconductor laser element. The first film and the second film satisfy relations expressed by the formulas n1 (nc)1/2. The reflectivity characteristic of the multilayer film has a 1 maximum at a wavelength &lgr;1 in a wavelength region and minimums at wavelengths &lgr;2 and &lgr;3 on a shorter-wavelength side and a longer-wavelength side of the wavelength &lgr;1, respectively.
摘要翻译：多层膜交替层叠，折射率为n1的第一膜和折射率为n2的第二膜，所述多层膜具有与半导体激光元件的端面接触的多层膜。第一膜和第二膜满足由公式n1 <（Nc）1/2和n2>（nc）1/2表示的关系。多层膜的反射率特性在波长区域的波长λ1处最大为1，在波长λ1的较短波长侧和长波长侧的波长λ2和λ3处分别为最小。

38. 发明授权

US06249140B1 Method of screening semiconductor laser device using temperature cycling and variable driving current 失效
标题翻译：使用温度循环和可变驱动电流来筛选半导体激光器件的方法
公开(公告)号：US06249140B1
公开(公告)日：2001-06-19
申请号：US09252916
申请日：1999-02-19
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： G01R3126
CPC分类号： H01S5/0021
摘要： A method of screening semicondutor laser devices which fail due to sudden deterioration and initial failures. Semiconductor laser devices are screened by thermal cycling wherein the devices are kept at a high temperature and a low temperature alternately while supplying a driving current.
摘要翻译：一种筛选半导体激光器件的方法，其由于突然的劣化和初始故障而失效。半导体激光器件通过热循环进行屏蔽，其中器件在提供驱动电流的同时交替地保持在高温和低温。

39. 发明授权

US5675597A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5675597A
公开(公告)日：1997-10-07
申请号：US551427
申请日：1995-11-01
申请人： Kimio Shigihara
发明人： Kimio Shigihara
IPC分类号： H01L33/58 , H01L33/62 , H01S3/00 , H01S5/00 , H01S5/022 , H01S3/10
CPC分类号： H01S5/02296 , H01S5/0683 , H01L2224/48091 , H01L2924/3025 , H01S5/02252
摘要： A semiconductor laser device includes a semiconductor laser chip emitting a laser light from its front facet and rear facet, a photodiode which receives the light emitted from the rear facet of said semiconductor laser chip, an upper end of the light receiving surface of said photodiode being positioned at a height equal to or lower than the light emitting position of said semiconductor laser chip. Therefore, the return light which returns the monitor photodiode is reduced and the controllability of the APC control can be enhanced.
摘要翻译：一种半导体激光器件，包括从其前面和后面发射激光的半导体激光器芯片，接收从所述半导体激光器芯片的后面发射的光的光电二极管，所述光电二极管的光接收表面的上端为位于等于或低于所述半导体激光芯片的发光位置的高度。因此，返回监视光电二极管的返回光减少，并且可以提高APC控制的可控性。

40. 发明授权

US5519720A Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US5519720A
公开(公告)日：1996-05-21
申请号：US177466
申请日：1994-01-05
申请人： Ryoichi Hirano , Etsuji Omura , Akira Takemoto , Kimio Shigihara
发明人： Ryoichi Hirano , Etsuji Omura , Akira Takemoto , Kimio Shigihara
IPC分类号： H01L21/52 , G02B6/42 , H01L23/36 , H01S5/00 , H01S5/022 , H01S5/024 , H01S3/043 , H01S3/18
CPC分类号： H01L33/483 , G02B6/4204 , H01L33/64 , H01S5/02212 , H01L2224/45139 , H01L2224/48091 , H01L33/62 , H01S5/02272 , H01S5/02284 , H01S5/024
摘要： A semiconductor light emitting device includes a semiconductor light emitting element mounted on a package stem via a radiating heatsink block, the light emitting point of the light emitting element being positioned on the central axis of the stem and at or near the center of mass of the heatsink block. Another light emitting device includes a light emitting element mounted on a stem via a heatsink block, the light emitting point of the element being positioned on the central axis of the stem with only a portion of a lower surface of the heatsink block close to the central axis of the stem attached to the stem. The movement of the light emitting point with temperature variations is suppressed. Another light emitting device includes a laser chip element mounted on a package stem via a heatsink block, the laser chip element being mounted on the heatsink block so that the emitted light forms an angle .theta. with a surface of the stem and the position and angle of the emitted light do not vary when the temperature changes.
摘要翻译：半导体发光器件包括通过辐射散热块安装在封装主干上的半导体发光元件，发光元件的发光点位于杆的中心轴线上，并且位于或接近质心的中心散热片另一种发光器件包括通过散热块安装在杆上的发光元件，元件的发光点位于杆的中心轴线上，散热块的下表面的仅一部分靠近中心杆的轴线连接到杆上。抑制了具有温度变化的发光点的移动。另一种发光器件包括通过散热块安装在封装主体上的激光芯片元件，激光芯片元件安装在散热块上，使发射的光与杆表面形成角度θ，当温度变化时，发出的光不会变化。

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