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31. 发明授权

US08508720B2 Distance measuring system and distance measuring method 有权
标题翻译：距离测量系统和测距方法
公开(公告)号：US08508720B2
公开(公告)日：2013-08-13
申请号：US13123789
申请日：2009-10-02
申请人： Tomoyuki Kamiyama
发明人： Tomoyuki Kamiyama
IPC分类号： G01C3/08
CPC分类号： G01S17/10 , G01C3/08 , G01S7/4876 , G01S17/89
摘要： A distance measuring system and a distance measuring method which use a time-of-flight (TOF) method. The distance measuring system obtains a reference light quantity of reflected light which is a cumulative light quantity of the reflected light during a reference period, obtains a measured light quantity of the reflected light which is a cumulative light quantity of the reflected light during a measurement period, and calculates, on the basis of a ratio of the measured light quantity of the reflected light to the reference light quantity of the reflected light and a ratio of the reflected light incident period to the reference period, a reflected light incident period that is a period which is included in the measurement period and during which the reflected light is incident upon photoelectric conversion elements of a light-receiving device. Then, the distance measuring system calculates the distance between the distance measuring system and an object on the basis of the reflected light incident period.
摘要翻译：使用飞行时间（TOF）方法的距离测量系统和距离测量方法。距离测量系统获得在参考周期期间反射光的累积光量的反射光的参考光量，获得在测量期间内作为反射光的累积光量的反射光的测量光量并且基于所测量的反射光量与反射光的参考光量与反射光入射周期与参考周期的比率的比率，计算出反射光入射时间为该周期包括在测量周期中，并且反射光入射到光接收装置的光电转换元件上。然后，距离测量系统基于反射光入射期间计算距离测量系统与物体之间的距离。

32. 发明申请

US20130020471A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20130020471A1
公开(公告)日：2013-01-24
申请号：US13638258
申请日：2011-03-29
申请人： Keisuke Korekado , Tomoyuki Kamiyama , Yoichi Nishimura
发明人： Keisuke Korekado , Tomoyuki Kamiyama , Yoichi Nishimura
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H03M1/123 , H03M1/56 , H04N5/335 , H04N5/361
摘要： Disclosed is a solid-state imaging device capable of calculating the difference in charge obtained by photoelectric conversion, and capable of a high level of integration. A solid-state imaging device is provided with an AD converter which is provided with: a first comparator which outputs a signal corresponding to a first analogue signal of a first pixel by comparing said first analogue signal with a reference voltage supplied from the reference voltage generation unit which generates a reference voltage which gradually changes; a second comparator which outputs a signal corresponding to a second analogue signal of a second pixel by comparing said second analogue signal with the reference voltage supplied by the reference voltage generation unit; a difference circuit which finds the difference between the signal corresponding to said first analogue signal and the signal corresponding to said second analogue signal and outputs a difference signal; and a counter circuit which counts the number of pulses in a pulse sequence corresponding to the aforementioned difference signal and converts said difference signal into a digital signal.
摘要翻译：公开了能够计算通过光电转换获得的电荷差异并且能够高集成度的固态成像装置。固态成像装置设置有AD转换器，其具有：第一比较器，其通过将所述第一模拟信号与从参考电压产生提供的参考电压进行比较来输出与第一像素的第一模拟信号相对应的信号产生逐渐变化的参考电压的单元; 第二比较器，通过将所述第二模拟信号与由参考电压产生单元提供的参考电压进行比较来输出与第二像素的第二模拟信号相对应的信号; 差分电路，其找到与所述第一模拟信号相对应的信号与对应于所述第二模拟信号的信号之间的差异，并输出差分信号; 以及计数器电路，对与上述差分信号相对应的脉冲序列中的脉冲数进行计数，并将所述差分信号转换为数字信号。

33. 发明授权

US08330834B2 Signal processing method and solid-state image sensing device 有权
标题翻译：信号处理方法和固态摄像装置
公开(公告)号：US08330834B2
公开(公告)日：2012-12-11
申请号：US13073519
申请日：2011-03-28
申请人： Keisuke Korekado , Tomoyuki Kamiyama , Toru Takenaka
发明人： Keisuke Korekado , Tomoyuki Kamiyama , Toru Takenaka
IPC分类号： H04N5/217 , H04N3/14 , H03M1/00
CPC分类号： H04N5/361 , H04N5/23245 , H04N5/378
摘要： A solid-state image sensing device reads repeatedly M times an analog signal having a black level, during a first A/D conversion period. A frequency divider frequency-divides by M a pulse train depending on the analog signal having a black level that is read repeatedly M times, and a counter circuit counts the pulses of the pulse train, which is frequency-divided by M. Thereafter, the solid-state image sensing device reads repeatedly N times an analog signal having a signal level, during a second A/D conversion period. The frequency divider frequency-divides by N a pulse train depending on the analog signal having a signal level that is read repeatedly N times, and the counter circuit counts the pulses of the pulse train, which is frequency-divided by N. M and N satisfy the relationship N≦M.
摘要翻译：在第一A / D转换周期期间，固态图像感测装置重复M次读取具有黑电平的模拟信号。分频器频率根据M反复M次读取的黑电平的模拟信号被M分频，并且计数电路对脉冲序列的脉冲进行计数，频率除以M.然后，在第二A / D转换周期期间，固态图像感测装置重复读取具有信号电平的模拟信号的N倍。分频器根据具有重复读取的信号电平的模拟信号N次分频脉冲序列N次，并且计数器电路对脉冲序列的脉冲进行计数，该脉冲串被分频为N.M和N 满足关系N＆nlE; M。

34. 发明申请

US20120200842A1 PHOTOELECTRIC CONVERSION ELEMENT, LIGHT RECEIVING DEVICE, LIGHT RECEIVING SYSTEM, AND DISTANCE MEASURING DEVICE 有权
标题翻译：光电转换元件，光接收装置，光接收系统和距离测量装置
公开(公告)号：US20120200842A1
公开(公告)日：2012-08-09
申请号：US13500738
申请日：2010-10-01
申请人： Tomoyuki Kamiyama , Keisuke Korekado
发明人： Tomoyuki Kamiyama , Keisuke Korekado
IPC分类号： G01C3/08 , H01L27/148 , G01J1/46 , H01L27/146
CPC分类号： G01B11/026 , G01S7/4863 , G01S17/89
摘要： A first photoelectric conversion element, which detects light and converts the light into photoelectrons has: one MOS diode having an electrode formed on a semiconductor base body with an insulator therebetween; and a plurality of embedded photodiodes formed in the semiconductor base body. The electrode of the MOS diode has, when viewed from the upper surface, a comb-like shape wherein a plurality of branch portions are branched from one electrode portion. Each of the embedded photodiodes is disposed to nest between the branch portions of the electrode when viewed from the upper surface.
摘要翻译：检测光并将光转换成光电子的第一光电转换元件具有：具有在半导体基体上形成有绝缘体的电极的一个MOS二极管; 以及形成在半导体基体中的多个嵌入式光电二极管。当从上表面观察时，MOS二极管的电极具有从一个电极部分分支出多个分支部分的梳状形状。每个嵌入式光电二极管被设置为当从上表面观察时嵌入在电极的分支部分之间。

35. 发明申请

US20090147119A1 OPTICAL SENSOR CIRCUIT AND IMAGE SENSOR 失效
标题翻译：光传感器电路和图像传感器
公开(公告)号：US20090147119A1
公开(公告)日：2009-06-11
申请号：US11719802
申请日：2006-06-09
申请人： Tomoyuki Kamiyama , Sukeyuki Shinotsuka , Masaki Kunigami , Makoto Furukawa
发明人： Tomoyuki Kamiyama , Sukeyuki Shinotsuka , Masaki Kunigami , Makoto Furukawa
IPC分类号： H04N5/335
CPC分类号： H04N5/3745 , H01L27/14609 , H01L27/14643 , H04N5/243 , H04N5/35518 , H04N5/35527
摘要： An optical sensor circuit has a photodiode PD, a MOS transistor Q1, a voltage controller 13 which supplies a gate voltage and a drain voltage to the transistor, etc. The voltage controller includes initial setting means 15. In the initial setting means, an electrostatic capacitance element of the photodiode is charged/discharged while setting a gate voltage of the transistor Q1 to a high gate voltage value VgH, only for a predetermined time period, and setting a drain voltage to a low drain voltage value VdL, only for a predetermined time period. Thereafter, the drain voltage is set to VdH, and, after elapse of a predetermined time period, the gate voltage is set to VgL. VgH, VdH, and VdL satisfy relational expressions of “VgH−VdH Vth where Vth: a threshold voltage of the MOS transistor Q1”.
摘要翻译：光传感器电路具有光电二极管PD，MOS晶体管Q1，向晶体管供给栅极电压和漏极电压的电压控制器等。电压控制器包括初始设定单元15.在初始设定单元中，静电光电二极管的电容元件在将晶体管Q1的栅极电压设定为高栅极电压值VgH的同时，仅在预定时间段内进行充电/放电，并将漏极电压设定为低漏极电压值VdL，仅对于预定的时间段。此后，将漏极电压设定为VdH，经过规定时间后，将栅极电压设定为VgL。 VgH，VdH和VdL满足“VgH-VdH Vth”的关系式，其中Vth：MOS晶体管Q1的阈值电压。

36. 发明授权

US06909462B1 Photosensor circuit capable of detecting minute light signal in high precision and image sensor utilizing photosensor circuit 失效
标题翻译：光传感器电路能够利用光传感器电路检测高精度的微小信号和图像传感器
公开(公告)号：US06909462B1
公开(公告)日：2005-06-21
申请号：US09268344
申请日：1999-03-16
申请人： Sukeyuki Shinotsuka , Nobuhiro Fueki , Tomoyuki Kamiyama , Toshio Imai , Toshiaki Tanaka
发明人： Sukeyuki Shinotsuka , Nobuhiro Fueki , Tomoyuki Kamiyama , Toshio Imai , Toshiaki Tanaka
IPC分类号： G01J1/44 , H01L27/146 , H01L31/10 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745 , H04N3/14
CPC分类号： H04N5/35518
摘要： A photosensor circuit comprises a photodiode PD, which converts a light signal into electricity, an n-channel MOS transistor QD1 which has a logarithmic characteristic in its weakly reversed condition and converts a sensor current generated by the photodiode PD into a detection voltage which has a logarithmic characteristic, and a capacitor which is connected to a detection terminal of this transistor QD1. A resetting voltage VG=VS is applied to the gate G of the transistor QD1 to lower the impedance between the drain and the source of the transistor for resetting the transistor to an initial condition. As the n-channel MOS transistor QD1 is a depletion type n-channel MOS transistor, when this transistor QD1 does not receive any gate voltage, the transistor stays in a weakly reversed condition and has a logarithmic characteristic. This photosensor circuit has a high SN ratio and is capable of detecting minute light signals in high precision. Furthermore, it shows no after-image phenomenon and requires a relatively small number of power sources.
摘要翻译：光电传感器电路包括将光信号转换为电的光电二极管PD，其弱反转状态具有对数特性的n沟道MOS晶体管QD 1，并将由光电二极管PD产生的传感器电流转换为具有对数特性，以及与该晶体管QD 1的检测端子连接的电容器。复位电压VG = VS施加到晶体管QD 1的栅极G，以降低晶体管的漏极和源极之间的阻抗，以将晶体管复位到初始条件。由于n沟道MOS晶体管QD 1是耗尽型n沟道MOS晶体管，所以当该晶体管QD 1不接收任何栅极电压时，晶体管保持弱反转状态并具有对数特性。该光电传感器电路具有高SN比，能够高精度地检测微小的光信号。此外，它显示没有后现象现象，并且需要相对较少数量的电源。

37. 发明授权

US5770525A Method of fabricating semiconductor device and method of fabricating high-frequency semiconductor device 失效
标题翻译：制造半导体器件的方法和制造高频半导体器件的方法
公开(公告)号：US5770525A
公开(公告)日：1998-06-23
申请号：US558548
申请日：1995-11-16
申请人： Tomoyuki Kamiyama
发明人： Tomoyuki Kamiyama
IPC分类号： H01L21/285 , H01L21/306 , H01L21/308 , H01L21/335 , H01L21/338 , H01L29/778 , H01L29/812 , H01L21/302
CPC分类号： H01L29/66462 , H01L21/28587 , H01L21/30612 , H01L21/3081
摘要： A superlattice buffer layer, an AlGaAs layer, an InGaAs layer, an AlGaAs layer, and an N+GaAs layer are successively deposited on a GaAs layer by epitaxial growth. Using an electron-beam resist as a mask, a patterning layer in the form of an SiO2 film is formed on the N+GaAs layer. Then, only the N+GaAs layer is selectively etched through an opening in the electron-beam resist with a water-diluted etchant which comprises a mixture of ammonia water and hydrogen peroxide solution which are mixed at a ratio of at least 1:4000, thereby forming a recess in the N+GaAs layer. Using the electron-beam resist also as a mask, a gate metal member serving as the base end of a T-shaped gate electrode is deposited on the AlGaAs layer in the recess. The width of an opening in the electron-beam resist determines the gate length.
摘要翻译：通过外延生长，在GaAs层上依次沉积超晶格缓冲层，AlGaAs层，InGaAs层，AlGaAs层和N + GaAs层。使用电子束抗蚀剂作为掩模，在N + GaAs层上形成SiO 2膜形式的图案化层。然后，只有N + GaAs层通过水稀释的蚀刻剂通过电子束抗蚀剂中的开口被选择性地蚀刻，该蚀刻剂包括以至少1:4000的比率混合的氨水和过氧化氢溶液的混合物，从而在N + GaAs层中形成凹陷。使用电子束抗蚀剂也作为掩模，用作T形栅电极的基端的栅极金属部件沉积在凹部中的AlGaAs层上。电子束抗蚀剂中开口的宽度决定栅极长度。

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