专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20070045574A1 Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as an alignment target 有权
标题翻译：用于使用处理对象作为对准目标相对于半导体集成电路定位激光束点的方法和系统
公开(公告)号：US20070045574A1
公开(公告)日：2007-03-01
申请号：US11213329
申请日：2005-08-26
申请人： Kelly Bruland
发明人： Kelly Bruland
IPC分类号： G01N21/86 , G01V8/00
CPC分类号： B23K26/04 , B23K26/042 , B23K26/043 , H01L21/76894 , H01L23/5258 , H01L23/544 , H01L2924/0002 , H01L2924/00
摘要： A method and system position a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. The method generates a metrology laser beam and propagates the metrology laser beam along a propagation path to a metrology laser beam spot on or near a structure to be selectively processed. The method detects a reflection of the metrology laser beam from the structure, thereby generating a reflection signal, and determining, based on the reflection signal, a position of the metrology laser beam spot relative to the structure.
摘要翻译：一种方法和系统将激光束点相对于在半导体衬底上或半导体衬底内具有结构的半导体衬底定位，以通过将处理激光束传送到处理激光束点来选择性地处理。该方法产生计量激光束，并将测量激光束沿着传播路径传播到要选择性处理的结构上或附近的计量激光束点。该方法检测来自结构的计量激光束的反射，从而产生反射信号，并且基于反射信号确定计量激光束点相对于该结构的位置。

32. 发明申请

US20050282406A1 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
标题翻译：使用多个横向间隔开的激光束点进行多次打击的半导体结构处理
公开(公告)号：US20050282406A1
公开(公告)日：2005-12-22
申请号：US11051262
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo
发明人： Kelly Bruland , Brian Baird , Ho Lo
IPC分类号： B23K26/067 , H01L21/26 , H01L21/768
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

33. 发明申请

US20050279739A1 Semiconductor structure processing using multiple laser beam spots spaced on-axis to increase single-blow throughput 有权
标题翻译：使用在轴上间隔开的多个激光束点的半导体结构处理来增加单次打击吞吐量
公开(公告)号：US20050279739A1
公开(公告)日：2005-12-22
申请号：US11052000
申请日：2005-02-04
申请人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
发明人： Kelly Bruland , Brian Baird , Ho Lo , Stephen Swaringen , Frank Evans
IPC分类号： B23K26/00 , B23K26/06 , B23K26/067 , B23K26/08 , B23K26/10 , B23K26/38 , B23K26/40 , H01L21/768 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0613 , B23K26/0624 , B23K26/067 , B23K26/10 , B23K2101/40 , H01L21/76894 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row so as to complete irradiation of said structures with a single laser pulse per structure. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with either the first or the second laser beam. The moving step results in a speed that is greater than would occur if only a single laser beam were utilized to irradiate the structures in the row.
摘要翻译：方法和系统使用多个脉冲激光束选择性地照射半导体衬底上或内部的结构。这些结构被布置成在大体上沿长度方向延伸的一排。该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一脉冲激光束和沿着与半导体衬底相交的第二激光束轴传播的第二脉冲激光束。该方法将来自第一和第二脉冲激光束的相应的第一和第二脉冲引导到行中不同的第一和第二结构，以便用每个结构的单个激光脉冲完成所述结构的照射。该方法相对于半导体衬底基本上在与行的长度方向平行的方向基本上一致地移动第一和第二激光束轴线，以便用第一或第二激光束选择性地照射该行中的结构。移动步骤导致的速度大于如果仅使用单个激光束来照射行中的结构的速度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式