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    • 32. 发明授权
    • Magnetic recording medium
    • 磁记录介质
    • US06780503B2
    • 2004-08-24
    • US10281947
    • 2002-10-29
    • Hitoshi NoguchiNobuo YamazakiShinji Saito
    • Hitoshi NoguchiNobuo YamazakiShinji Saito
    • G11B5702
    • G11B5/7021G11B5/7023G11B5/70678G11B5/7085G11B5/714Y10T428/256Y10T428/31609
    • A magnetic recording medium comprising: a nonmagnetic support; and at least one magnetic layer comprising a ferromagnetic hexagonal ferrite powder and a binder, wherein the magnetic layer comprises diamond particles having an average particle size of 0.03 to 0.5 &mgr;m in a ratio of 0.1 to 5% by weight to the ferromagnetic hexagonal ferrite powder, the ferrite hexagonal ferrite powder has an average tabular diameter of 5 to 40 nm, and the binder is at least one of: (i) a binder comprising from 0.2 to 0.7 meq/g of at least one polar group selected from —SO3M, —OSO3M, —PO(OM)2, —OPO(OM)2 and —COOM, wherein M represents a hydrogen atom, an alkali metal or ammonium, and (ii) a binder comprising from 0.5 to 5 meq/g of at least one polar group selected from —CONR1R2, —NR1R2 and —N+R1R2R3 wherein R1, R2 and R3 each independently represents a hydrogen atom or an alkyl group.
    • 一种磁记录介质,包括:非磁性载体; 以及包含铁磁性六角铁氧体粉末和粘合剂的至少一个磁性层,其中所述磁性层包含平均粒度为0.03-0.5μm,相对于铁磁性六角铁氧体粉末为0.1-5wt%的金刚石颗粒, 所述铁氧体六角铁氧体粉末的平均片状直径为5〜40nm,所述粘合剂为以下中的至少一种:(i)包含0.2〜0.7meq / g的至少一种选自-SO 3 M, OSO3M,-PO(OM)2,-OPO(OM)2和-COOM,其中M表示氢原子,碱金属或铵,和(ii)包含0.5-5meq / g至少一种 选自-CONR1R2,-NR1R2和-N + R1R2R3的极性基团,其中R1,R2和R3各自独立地表示氢原子或烷基。
    • 33. 发明授权
    • Method for producing magnetic recording medium and magnetic recording medium
    • 磁记录介质和磁记录介质的制造方法
    • US06677036B2
    • 2004-01-13
    • US10281996
    • 2002-10-29
    • Hitoshi NoguchiNobuo YamazakiShinji Saito
    • Hitoshi NoguchiNobuo YamazakiShinji Saito
    • B05D512
    • G11B5/70678G11B5/7021G11B5/7023Y10S428/90
    • A method for producing a magnetic recording medium comprising: dispersing at least a binder and a ferromagnetic hexagonal ferrite powder to prepare a magnetic coating; and applying the magnetic coating to provide at least one magnetic layer, wherein the binder is at least one of: (a) a binder comprising 0.2 to 0.7 meq/g of at least one polar group selected from —SO3M, —OSO3M, —PO(OM)2, —OPO(OM)2 and —COOM wherein M represents a hydrogen atom, an alkali metal or ammonium; and (b) a binder comprising 0.5 to 5 meq/g of at least one polar group selected from —CONR1R2, —NR1R2 and —N+R1R2R3 wherein R1, R2 and R3 each independently represents a hydrogen atom or an alkyl group, and the ferromagnetic hexagonal ferrite powder has an average tabular diameter of from 10 to 40 nm and a water content of from 0.3 to 3% by weight.
    • 一种制造磁记录介质的方法,包括:分散至少一种粘结剂和一种铁磁性六角铁氧体粉末以制备磁性涂层; 以及施加所述磁性涂层以提供至少一个磁性层,其中所述粘合剂是以下至少一种:(a)包含0.2至0.7meq / g的至少一种选自-SO 3 M,-OSO 3 M,-PO (OM)2,-OPO(OM)2和-COOM,其中M表示氢原子,碱金属或铵; 和(b)包含0.5-5meq / g至少一种选自-CONR1R2,-NR1R2和-N + R1R2R3的极性基团的粘合剂,其中R1,R2和R3各自独立地表示氢原子或烷基, 铁磁六方铁氧体粉末的平均片状直径为10〜40nm,水含量为0.3〜3重量%。
    • 37. 发明授权
    • Semiconductor device with improved inter-element isolation
    • 具有改进的元件间隔离的半导体器件
    • US06225676B1
    • 2001-05-01
    • US09252930
    • 1999-02-19
    • Yoshinobu HattoriMasahiro TsukaharaShinji Saito
    • Yoshinobu HattoriMasahiro TsukaharaShinji Saito
    • H01L2986
    • H01L21/761H01L2924/0002H01L2924/00
    • A semiconductor device having multiple circuit elements capable of performing different functions and that operate at a high frequency includes island regions on which the circuit elements are located and isolation regions that surround the island regions and thus, the circuit elements. The island regions electrically separate the circuit elements from each other. A capacitor is connected between a substrate portion of the semiconductor device and ground. The isolation regions include a conductive region with a conductivity type opposite to the conductivity type of the substrate portion, such that a parasitic capacitor is formed between the substrate portion and the conductive region. The parasitic capacitor prevents signal leakage between the circuit elements and the island regions.
    • 具有能够执行不同功能并且以高频率工作的多个电路元件的半导体器件包括电路元件所在的岛状区域和围绕岛状区域以及因此电路元件的隔离区域。 岛区域将电路元件彼此电分离。 电容器连接在半导体器件的衬底部分和接地之间。 隔离区域包括具有与衬底部分的导电类型相反的导电类型的导电区域,使得在衬底部分和导电区域之间形成寄生电容器。 寄生电容器防止电路元件和岛区域之间的信号泄漏。
    • 40. 发明授权
    • Multi-layer structured nitride-based semiconductor devices
    • 多层结构氮化物基半导体器件
    • US6121638A
    • 2000-09-19
    • US955747
    • 1997-10-22
    • John RennieGenichi HatakoshiShinji Saito
    • John RennieGenichi HatakoshiShinji Saito
    • H01L33/00H01L33/32H01S5/327H01S5/343A01L33/00A01L31/0328A01L31/0336A01L31/109
    • H01L33/32B82Y20/00H01L33/007H01S2301/173H01S5/3214H01S5/327H01S5/34333
    • At an n--n hetero-interface in a GaN-based or ZnSe-based multilayered semiconductor laser and light-emitting diode, an excessive voltage drop causing the operating voltage to increased is reduced, thereby lengthening the service life of the device. A single or plurality of n-type intermediate layers are provided in the n--n hetero-interface region where the excessive voltage drop develops. The excessive voltage drop developing at the n--n hetero-interface is decreased by setting the energy value at the edge of the conduction band of each intermediate layer to a mid-value between the energy values at the edges of the conduction bands of the n-type compound semiconductors adjoining both sides of the intermediate layer. The configuration of a GaN-based MQW laser including the intermediate layer formed on sapphire substrate is shown. The relationship between the lattice constant of an intermediate layer necessary for obtaining an intermediate layer excellent in crystallinity suitable for the above object and the lattice constants of compound semiconductors adjoining both sides of the intermediate layer is described.
    • 在基于GaN或ZnSe的多层半导体激光器和发光二极管中的n-n异质界面处,降低了导致工作电压增加的过大的电压降,从而延长了器件的使用寿命。 在形成过大的电压降的n-n异质界面区域中设置单个或多个n型中间层。 通过将n型异质界面的导带边缘处的能量值设定在n型导带边缘的能量值之间的中间值,可以减小在nn异质界面处产生的过大的电压降 邻接中间层两侧的复合半导体。 示出了包括在蓝宝石衬底上形成的中间层的GaN基MQW激光器的构造。 描述了获得适合于上述目的的结晶度优异的中间层所需的中间层的晶格常数与邻接中间层两侧的化合物半导体的晶格常数之间的关系。