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31. 发明授权

US06376961B2 Coil assembly of rotating electrical machinery and method for producing the same, and stator of rotating electric machinery using the same coil assembly 有权
标题翻译：旋转电机的线圈组件及其制造方法，以及使用相同线圈组件的旋转电机的定子
公开(公告)号：US06376961B2
公开(公告)日：2002-04-23
申请号：US09776638
申请日：2001-02-06
申请人： Tsutomu Murakami , Hironori Ozaki , Naohiro Oketani , Akira Morishita , Hiroshi Matsui , Tsuyoshi Takahashi , Katsumi Adachi , Takushi Takizawa , Yoshihito Asao , Atsushi Oohashi
发明人： Tsutomu Murakami , Hironori Ozaki , Naohiro Oketani , Akira Morishita , Hiroshi Matsui , Tsuyoshi Takahashi , Katsumi Adachi , Takushi Takizawa , Yoshihito Asao , Atsushi Oohashi
IPC分类号： H02K100
CPC分类号： H02K3/14 , H02K15/0478
摘要： The invention provides a coil member of rotating electrical machinery, by which improvements in the mass production and downsizing thereof are enabled, which is a coil assembly for rotating electrical machinery, consisting of a plurality of coil combinations mounted at iron core slots, wherein the respective coil combinations 14 are inserted into slots at pitches equivalent to an appointed number of slots, and are formed of an integral coil member 21 in which the first and the second linear portions 21A and 21B alternately disposed at the inner layer side and the outer layer side in the slots, and the first and the second turning portions 21C and 21D for connecting the first and second linear portions 21A and 21B adjacent to each other outward of one end side and outward of the other end side in the lengthwise direction of the slots are integrated together. And, the first linear portion 21A of the appointed coil member 211 thereof, and the second linear portion 21B of another coil member 211 are laminated and disposed in the same slots.
摘要翻译：本发明提供了一种旋转电机的线圈构件，通过该线圈构件能够实现大规模生产和小型化的改进，其是安装在铁芯槽处的多个线圈组合组成的用于旋转电机的线圈组件，其中相应的线圈组合14以与指定数量的槽相等的间距插入槽中，并且由整体的线圈构件21形成，其中第一和第二直线部分21A和21B交替地设置在内层侧和外层侧在狭槽中，并且用于将第一和第二直线部分21A和21B相互连接的第一和第二转动部分21C和21D在狭槽的一个端部侧的外侧和另一端侧的外侧在狭槽的长度方向上彼此相邻集成在一起并且，其指定的线圈部件211的第一直线部分21A和另一个线圈部件211的第二直线部分21B层叠并设置在相同的狭槽中。

32. 发明授权

US06141168A Automatic calibration method, read apparatus and storage apparatus 失效
标题翻译：自动校准方法，读取装置和存储装置
公开(公告)号：US06141168A
公开(公告)日：2000-10-31
申请号：US568860
申请日：1995-12-05
申请人： Tsuyoshi Takahashi , Toshiki Kimura
发明人： Tsuyoshi Takahashi , Toshiki Kimura
IPC分类号： G11B5/09 , G11B5/00 , G11B5/012 , G11B5/035 , G11B5/39 , G11B20/10 , G11B20/14 , G11B20/18 , G11B5/03
CPC分类号： G11B20/10481 , G11B20/10009 , G11B20/10055 , G11B20/10296 , G11B5/012 , G11B5/035 , G11B20/1426 , G11B2005/0013 , G11B2005/0018
摘要： An automatic calibration method for a read system in which data read by a head from a recording medium is demodulated using a partial response method which includes the steps of: storing at least one of a parameter relating to a bias current fed to the head and parameters necessary for data demodulation in the read system, for a plurality of operating conditions; and automatically calibrating the at least one parameter to a preset value suitable for an operating condition.
摘要翻译：一种用于读取系统的自动校准方法，其中使用部分响应方法来解调来自记录介质的头部的数据，其包括以下步骤：存储与馈送到头部的偏置电流有关的参数和参数对于多个操作条件，在读取系统中进行数据解调所必需的; 并且将所述至少一个参数自动校准到适合于操作条件的预设值。

33. 发明授权

US5189578A Disk system with sub-actuators for fine head displacement 失效
标题翻译：具有用于精头位移的副致动器的磁盘系统
公开(公告)号：US5189578A
公开(公告)日：1993-02-23
申请号：US543425
申请日：1990-06-26
申请人： Kenji Mori , Hiromu Hirai , Haruaki Otsuki , Tsuyoshi Takahashi , Jun Naruse , Yuji Nishimura , Muneo Kawamoto
发明人： Kenji Mori , Hiromu Hirai , Haruaki Otsuki , Tsuyoshi Takahashi , Jun Naruse , Yuji Nishimura , Muneo Kawamoto
IPC分类号： G11B5/55 , G11B5/58 , G11B7/085 , G11B7/09 , G11B7/12 , G11B11/105 , G11B19/20 , G11B21/08 , G11B21/10
CPC分类号： G11B19/20 , G11B11/10552 , G11B11/10567 , G11B11/10576 , G11B11/1058 , G11B21/08 , G11B21/106 , G11B5/5552 , G11B5/5565 , G11B5/58 , G11B7/0857 , G11B7/0946 , G11B7/122 , G11B5/4873
摘要： A magnetic disk system utilizes both of voice coil motor and a piezoelectric element provided on a head supporting arm to precisely position a head to a predetermined position on a disk. The piezoelectric element is built in the distal end portion of the head supporting arm and is restricted in respect of its movement by a resilient mechanism which has low rigidity in the driving direction of the piezoelectric element and high rigidity in the other directions. The resilient mechanism is formed by pairs of doubled parallel leaf springs so arranged that each pair is disposed on either side of the piezoelectric element.
摘要翻译：磁盘系统利用设置在头部支撑臂上的音圈电动机和压电元件来精确地将磁头定位在盘上的预定位置。压电元件内置在头部支撑臂的远端部分中，并且通过弹性机构限制其运动，该弹性机构在压电元件的驱动方向上具有低刚度并且在其它方向上具有高刚度。弹性机构由成对的双平行板簧形成，使得每一对布置在压电元件的任一侧上。

34. 发明授权

US4808097A Apparatus for manufacturing short inorganic fibers 失效
标题翻译：用于制造短无机纤维的装置
公开(公告)号：US4808097A
公开(公告)日：1989-02-28
申请号：US5704
申请日：1987-01-21
申请人： Tsuyoshi Takahashi , Souichi Adachi
发明人： Tsuyoshi Takahashi , Souichi Adachi
IPC分类号： C03B37/04 , C03B37/05 , B22D11/01
CPC分类号： C03B37/045 , C03B37/047 , C03B37/055
摘要： An apparatus for manufacturing short inorganic fibers is disclosed. A molten inorganic raw material is supplied to a rotating rotor which rotates at high speed. A gas stream delivery port jets a gas stream in surrounding with the rotating rotor. That surface of the rotating rotor which is in direct contact with a melt is formed with a deposited layer of high temperature, erosion resistant coating material.
摘要翻译：公开了一种用于制造短无机纤维的设备。将熔融的无机原料供给到以高速旋转的旋转转子。气流输送口用旋转转子喷射周围的气流。与熔体直接接触的旋转转子的表面形成有耐高温，耐腐蚀的涂层材料的沉积层。

35. 发明授权

US09135990B2 Drive method for memory element, and storage device using memory element 有权
标题翻译：存储器元件的驱动方法，以及使用存储元件的存储器件
公开(公告)号：US09135990B2
公开(公告)日：2015-09-15
申请号：US13819217
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C11/00 , G11C13/00 , G11C17/16
CPC分类号： G11C13/0002 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/33 , G11C2213/52 , G11C2213/74 , G11C2213/79
摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
摘要翻译：存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

36. 发明授权

US08653912B2 Switching element 有权
标题翻译：开关元件
公开(公告)号：US08653912B2
公开(公告)日：2014-02-18
申请号：US12997316
申请日：2008-06-13
申请人： Shigeo Furuta , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Tetsuo Shimizu
发明人： Shigeo Furuta , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Tetsuo Shimizu
IPC分类号： H01H51/22 , H01H57/00
CPC分类号： H01L45/1233 , H01L45/04 , H01L45/12 , H01L45/124
摘要： There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.
摘要翻译：提供了一种开关元件，其有助于在器件中更高密度和层叠的集成，所述开关元件包括：绝缘基板; 设置在所述绝缘基板上的第一电极; 设置在所述第一电极上方的第二电极; 以及设置在第一电极和第二电极之间的电极间间隙，并且包括通过在第一电极和第二电极之间施加规定电压而引起电阻器的开关现象的纳米级间隙。

37. 发明授权

US08557448B2 Fuel cell and fuel cell separator 有权
标题翻译：燃料电池和燃料电池分离器
公开(公告)号：US08557448B2
公开(公告)日：2013-10-15
申请号：US11667876
申请日：2006-01-12
申请人： Yoshinori Yamamoto , Yuichi Yagami , Jiro Aizaki , Junichi Shirahama , Sogo Goto , Tsuyoshi Takahashi , Tomokazu Hayashi
发明人： Yoshinori Yamamoto , Yuichi Yagami , Jiro Aizaki , Junichi Shirahama , Sogo Goto , Tsuyoshi Takahashi , Tomokazu Hayashi
IPC分类号： H01M8/00 , H01M8/04 , H01M8/06 , H01M2/40
CPC分类号： H01M8/0265 , H01M8/0206 , H01M8/0228 , H01M8/0247 , H01M8/0254 , H01M8/0258 , H01M8/0267 , H01M8/04029 , H01M8/241 , H01M8/2457 , H01M8/2483
摘要： The fuel cell of the invention includes an electrolyte assembly, and a separator having one face as a gas flow path-forming face with a gas flow path formed thereon to allow flow of a reactive gas and the other face, which is reverse to the one face, as a refrigerant flow path-forming face with a refrigerant flow path formed thereon to allow flow of a refrigerant. The gas flow path-forming face of the separator has multiple linear gas flow paths that are arranged in parallel to one another, and a gas flow path connection structure that divides the multiple linear gas flow paths into plural linear gas flow path groups and connects at least part of the plural linear gas flow path groups in series. The refrigerant flow path-forming face has multiple linear refrigerant flow paths that are formed as a reverse structure of the multiple linear gas flow paths on the gas flow path-forming face, and a refrigerant flow path connection structure that is formed as a reverse structure of the gas flow path connection structure on the gas flow path-forming face to connect the multiple linear refrigerant flow paths in parallel.
摘要翻译：本发明的燃料电池包括一个电解液组件和一个隔板，一个表面作为一个气流通道形成面，在其上形成一个气流通道，以允许一个反应气体和另一个面相反流动作为制冷剂流路形成面，其上形成有制冷剂流路，以允许制冷剂流动。分离器的气体流路形成面具有彼此平行布置的多个线性气体流动路径，以及气体流路连接结构，其将多个线性气体流动路径分成多个线性气体流动路径组并连接在多个线性气体流路组的至少一部分串联。制冷剂流路形成面具有形成为气体流路形成面上的多个线性气体流路的相反结构的多个线性制冷剂流路和形成为反向结构的制冷剂流路连接结构的气体流路连接结构在气体流路形成面上并联连接多个线性制冷剂流路。

38. 发明申请

US20120299057A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120299057A1
公开(公告)日：2012-11-29
申请号：US13569939
申请日：2012-08-08
申请人： Tsuyoshi Takahashi
发明人： Tsuyoshi Takahashi
IPC分类号： H01L29/12
CPC分类号： H01L29/88 , H01L27/0605 , H01L27/0629 , H01L29/205 , H01L29/475 , H01L29/66151 , H01L29/66462 , H01L29/7787
摘要： A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling.
摘要翻译：半导体器件包括p型半导体层和n型半导体层，其通过夹着具有允许通过直接隧道传输多个电子和空穴的厚度的耗尽层而被接合。

39. 发明授权

US08125047B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08125047B2
公开(公告)日：2012-02-28
申请号：US12174010
申请日：2008-07-16
申请人： Tsuyoshi Takahashi
发明人： Tsuyoshi Takahashi
IPC分类号： H01L31/05
CPC分类号： H01L27/0605 , H01L21/743 , H01L21/7682 , H01L21/8252 , H01L23/66 , H01L29/0657 , H01L29/66462 , H01L29/7783 , H01L2223/6627 , H01L2924/0002 , H01L2924/19033 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device comprises a buffer layer 16 of an i-InAlAs layer formed over an SI-InP substrate 14, insulating films 24, 36 of BCB formed over the buffer layer 16, and a coplanar interconnection including a signal line 52 and ground lines 54 formed over the insulating film 36, a cavity 46 is formed in the SI-InP substrate 14, the buffer layer 16 and the insulating film below the signal line 52, and pillar-shaped supports in the cavity 46 support the insulating films 34, 36 which are the ceiling of the cavity 46.
摘要翻译：半导体器件包括在SI-InP衬底14上形成的i-InAlAs层的缓冲层16，形成在缓冲层16上的BCB的绝缘膜24,36，以及包括信号线52和接地线54的共面互连形成在绝缘膜36上，在SI-InP衬底14，缓冲层16和信号线52下面的绝缘膜上形成空腔46，并且空腔46中的柱状支撑件支撑绝缘膜34,36 这是空腔46的天花板。

40. 发明授权

US07990751B2 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element 有权
标题翻译：纳米开关元件的驱动方法和配备纳米角开关元件的存储装置
公开(公告)号：US07990751B2
公开(公告)日：2011-08-02
申请号：US12338313
申请日：2008-12-18
申请人： Yuichiro Masuda , Shigeo Furuta , Tsuyoshi Takahashi , Tetsuo Shimizu , Yasuhisa Naitoh , Masayo Horikawa
发明人： Yuichiro Masuda , Shigeo Furuta , Tsuyoshi Takahashi , Tetsuo Shimizu , Yasuhisa Naitoh , Masayo Horikawa
IPC分类号： G11C11/00 , G11C13/00 , G11C7/00 , G11C7/22
CPC分类号： G11C13/00 , G11C13/0069 , G11C13/02 , G11C2013/009 , Y10S977/708 , Y10S977/723 , Y10S977/94 , Y10S977/943
摘要： A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.
摘要翻译：纳米点开关元件配备有包括第一电极和第二电极之间的纳米级间隙的电极间间隙部分。通过在第一和第二电极之间施加电压，在电极间间隙部分产生切换现象。纳米点开关元件通过接收第一电压值的电压脉冲而从其低电阻状态转移到其高电阻状态，并且通过接收施加第二电压的电压脉冲从其高电阻状态转移到其低电阻状态值低于第一电压值。当纳米点开关元件从高电阻状态移动到低电阻状态时，在施加第二电压值的电压脉冲之前，施加第一和第二电压值之间的中间电压值的电压脉冲。

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