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31. 发明授权

US5449928A Compound semiconductor substrate having a hetero-junction and a field-effect transistor using the same 失效
标题翻译：具有异质结的复合半导体衬底和使用其的场效应晶体管
公开(公告)号：US5449928A
公开(公告)日：1995-09-12
申请号：US120379
申请日：1993-09-14
申请人： Kazuoki Matsugatani , Takashi Taguchi , Yoshiki Ueno , Tadashi Hattori
发明人： Kazuoki Matsugatani , Takashi Taguchi , Yoshiki Ueno , Tadashi Hattori
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/778 , H01L29/64
CPC分类号： H01L29/7783 , H01L29/205
摘要： A pseudomorphic HEMT of a structure which prevents the distribution of 2DEG in the channel layer from being concentrated near the hetero-interface relative to a doping layer and which, at the same time, enables the thickness of the channel layer to which distortion is imparted to be decreased. In an n-InAlAs/InGaAs pseudomorphic structure grown on an InP substrate 1, an InGaAs spacer layer 4 having an In composition ratio smaller than that of an InGaAs channel layer 3 is inserted in an InAlAs/InGaAs hetero-interface. The InGaAs channel layer 3 has an In composition ratio of 0.80 to exhibit a high mobility. Another InAlAs buffer layer 2, spacer layer 5 and doping layer 6 have an In composition ratio of 0.52 which is in lattice-match with the substrate, and InGaAs spacer layer 4 and cap layer 7 have an In composition ratio of 0.53 which is in lattice-match with the substrate. This constitution makes it possible to control the two-dimensional electron gas and to further increase the mobility.
摘要翻译：阻止2DEG在沟道层中的分布的伪形HEMT相对于掺杂层被集中在异质界面附近，并且同时使得能够使畸变被赋予的沟道层的厚度减少在InP衬底1上生长的n-InAlAs / InGaAs伪晶体结构中，In InAs / InGaAs异质界面中插入具有小于InGaAs沟道层3的In组成比的InGaAs间隔层4。 InGaAs沟道层3的In组成比为0.80，具有高迁移率。另一种InAlAs缓冲层2，间隔层5和掺杂层6的In组成比为0.52，与衬底晶格匹配，InGaAs间隔层4和覆盖层7的In组成比为0.53，晶格 - 与底物匹配。这种结构使得可以控制二维电子气并进一步提高迁移率。

32. 发明授权

US07209465B2 Wireless communication system having communication system switching function 有权
标题翻译：具有通信系统切换功能的无线通信系统
公开(公告)号：US07209465B2
公开(公告)日：2007-04-24
申请号：US10024748
申请日：2001-12-19
申请人： Kazuoki Matsugatani , Masumi Egawa
发明人： Kazuoki Matsugatani , Masumi Egawa
IPC分类号： H04Q7/24 , H04L12/28 , H04L12/66 , G01S1/00
CPC分类号： H04L61/2015 , H04L29/06 , H04L29/12952 , H04L61/6077 , H04W36/0011 , H04W36/14 , H04W40/20 , H04W40/26 , H04W40/28 , H04W80/04 , H04W88/06 , H04W88/16 , H04W92/02
摘要： Base stations of a communication system belong to a sub-network, which is connected to the Internet by way of a gateway. Base stations of another communication system belong to sub-network, which is connected to the Internet by way of another gateway. A mobile terminal communicates with a server by using one of the communication systems. In this case, the mobile terminal includes mobile station network interfaces which can access to the communication systems, and is designed to switch communication systems by means of a communication system switching unit.
摘要翻译：通信系统的基站属于通过网关连接到因特网的子网。另一个通信系统的基站属于通过另一个网关连接到互联网的子网。移动终端通过使用通信系统之一与服务器进行通信。在这种情况下，移动终端包括可以接入通信系统的移动站网络接口，并且被设计成通过通信系统切换单元切换通信系统。

33. 发明授权

US07076223B2 Gain control device for packet signal receiver 失效
公开(公告)号：US07076223B2
公开(公告)日：2006-07-11
申请号：US10619230
申请日：2003-07-14
申请人： Kazuoki Matsugatani , Kunihiko Sasaki
发明人： Kazuoki Matsugatani , Kunihiko Sasaki
IPC分类号： H04B1/06 , H04B7/00
CPC分类号： H03G3/3078
摘要： In a gain control device for packet signal receiver, a variable gain amplifier amplifies an input signal with a gain corresponding to a control voltage applied thereto, and a power detector detects output power of the variable gain amplifier. A packet detection circuit detects a packet signal based on the detected output power. A control circuit outputs the control voltage variable with the detected output power, and the control voltage is provided for the amplifier. Thus high-speed gain control is performed immediately after the start of detection of the packet signal. When the elapsed time after the start of detection of the packet signal exceeds a predetermined time, a sample-hold circuit sample-and-holds the control voltage. This control voltage is provided for the amplifier up to the end of reception of the packet signal thereafter. Thus low-speed gain control is performed to provide stable power without distorting the signal wave.

34. 发明申请

US20060132602A1 Image server, image acquisition device, and image display terminal 审中-公开
标题翻译：图像服务器，图像采集设备和图像显示终端
公开(公告)号：US20060132602A1
公开(公告)日：2006-06-22
申请号：US11294882
申请日：2005-12-06
申请人： Kenji Muto , Kazuoki Matsugatani , Jun Kosai
发明人： Kenji Muto , Kazuoki Matsugatani , Jun Kosai
IPC分类号： H04N7/18 , H04N9/47
CPC分类号： H04N7/18 , G08G1/0962
摘要： Images are efficiently collected or delivered so that uncomfortable feeling given to users who view picked images picked up at vehicles and delivered by an image server is lessened. An image server is so constructed that the following operation is performed: the picked image of the surroundings of a vehicle, picked up with a camera mounted on the vehicle, and the image pickup information of the picked image, including information about the image pickup point, are stored on a storing medium; and picked images stored on the storing medium are delivered to users who view received picked images. One is selected from among picked images inputted from a vehicle with respect to each of areas to which the image pickup points of those picked images belong based on the image pickup information and a predetermined selection condition. The selected picked image is stored on the storing medium.
摘要翻译：图像被有效地收集或传送，使得给予在车辆上拍摄并且被图像服务器传送的拾取的图像的用户的不舒服的感觉被减轻。图像服务器被构造成执行以下操作：被安装在车辆上的摄像机拾取的车辆的周围环境的拾取图像以及拾取的图像的图像拾取信息，包括关于图像拾取点的信息存储在存储介质上; 并且将存储在存储介质上的所选择的图像传送给查看接收到的所选图像的用户。根据摄像信息和预定的选择条件，从车辆输入的选择图像中选择相对于所选择的图像的图像拾取点所属的区域的每个区域。所选择的图像被存储在存储介质上。

35. 发明授权

US5367182A Compound semiconductor device for reducing the influence of resistance anisotropy on operating characteristics thereof 失效
标题翻译：用于减小电阻各向异性对其工作特性的影响的化合物半导体器件
公开(公告)号：US5367182A
公开(公告)日：1994-11-22
申请号：US35754
申请日：1993-03-24
申请人： Kazuoki Matsugatani , Takashi Taguchi , Yoshiki Ueno
发明人： Kazuoki Matsugatani , Takashi Taguchi , Yoshiki Ueno
IPC分类号： H01L29/205 , H01L29/778 , H01L29/06 , H01L29/203
CPC分类号： H01L29/7783 , H01L29/205
摘要： A compound semiconductor device including a semiconductor substrate having (100) plane as a crystal growth plane, a first semiconductor layer as an electron traveling layer and a second semiconductor layer for supplying electrons to the electron traveling layer. The first semiconductor layer is formed on the semiconductor substrate and has a different lattice constant from the semiconductor substrate so that a first strain is applied in the first semiconductor layer in a first strain direction. The second semiconductor layer is formed on the first semiconductor layer and has a different lattice constant from the first semiconductor layer to thereby apply a second strain to the second semiconductor layer. The second strain has a direction that is inverse to the first strain direction. In addition, the thickness of the semiconductor layer is defined so as to compensate for the first strain applied to the first semiconductor layer by the second strain applied to the second semiconductor.
摘要翻译：一种化合物半导体器件，包括具有（100）面作为晶体生长面的半导体衬底，作为电子传播层的第一半导体层和用于向电子传播层提供电子的第二半导体层。第一半导体层形成在半导体衬底上并且具有与半导体衬底不同的晶格常数，使得第一应变在第一应变方向上施加在第一半导体层中。第二半导体层形成在第一半导体层上并且具有与第一半导体层不同的晶格常数，从而向第二半导体层施加第二应变。第二应变具有与第一应变方向相反的方向。此外，半导体层的厚度被限定为通过施加到第二半导体的第二应变来补偿施加到第一半导体层的第一应变。

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