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    • 37. 发明申请
    • Power semiconductor device
    • 功率半导体器件
    • US20060237786A1
    • 2006-10-26
    • US11384260
    • 2006-03-21
    • Hideaki NinomiyaMasanobu TsuchitaniSatoshi TeramaeMasakazu YamaguchiKoichi SugiyamaSatoshi UranoKeiko Kawamura
    • Hideaki NinomiyaMasanobu TsuchitaniSatoshi TeramaeMasakazu YamaguchiKoichi SugiyamaSatoshi UranoKeiko Kawamura
    • H01L29/76
    • H01L29/7397H01L29/0623H01L29/0653H01L29/407H01L29/4236H01L29/42368H01L29/7393
    • A power semiconductor device according to the present invention comprises: a first conductive type base layer; a second conductive type base layer selectively formed on the first conductive type base layer; an insulation layer formed in the region on the first conductive type base layer on which the second conductive type base layer is not formed; a gate insulation film formed on the inner surface of a trench formed between the second conductive type base layer and the insulation layer so as to separate them from each other and to reach the first conductive type base layer from the surface of the second conductive type base layer; a first conductive type source layer selectively formed on the surface of the second conductive type base layer in contact with the gate insulation film; a gate electrode formed in the trench and insulated from the first conductive type base layer, the second conductive type base layer, and the first conductive type source layer by the gate insulation film; a main electrode electrically connected to the first conductive type base layer and the second conductive type base layer; and a first conductive type or second conductive type floating layer formed on the bottom of the insulation layer.
    • 根据本发明的功率半导体器件包括:第一导电型基极层; 选择性地形成在所述第一导电型基底层上的第二导电型基底层; 形成在不形成第二导电型基底层的第一导电型基底层上的区域中的绝缘层; 形成在形成在第二导电型基极层和绝缘层之间的沟槽的内表面上以便将它们彼此分离并从第二导电类型基底的表面到达第一导电型基极的栅极绝缘膜 层; 选择性地形成在与所述栅极绝缘膜接触的所述第二导电型基底层的表面上的第一导电型源极层; 形成在所述沟槽中的栅电极,通过所述栅极绝缘膜与所述第一导电型基极层,所述第二导电型基极层和所述第一导电型源极绝缘; 电连接到第一导电型基极层和第二导电型基极层的主电极; 以及形成在绝缘层的底部上的第一导电型或第二导电型浮动层。