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31. 发明授权

US06468822B2 Method for manufacturing electro-optic element 有权
标题翻译：电光元件制造方法
公开(公告)号：US06468822B2
公开(公告)日：2002-10-22
申请号：US09820939
申请日：2001-03-30
申请人： Yoichiro Maeda , Nobuhiro Nakamura , Nobuaki Ishiga , Kazunori Inoue
发明人： Yoichiro Maeda , Nobuhiro Nakamura , Nobuaki Ishiga , Kazunori Inoue
IPC分类号： H01L2100
CPC分类号： G02F1/13458 , G02F1/136286
摘要： By using a metal thin film comprising a layer of metal and a layer obtained by adding nitrogen atoms to metal for a metal thin film which becomes a gate electrode and the like, and for a metal thin film which becomes a source electrode and a drain electrode, there is prepared electro-optic elements free from display defects caused by high contact resistance at connected portion of the pixel electrode with the above electrodes even when a low resistance line material is used.
摘要翻译：通过使用包含金属层的金属薄膜和通过向成为栅电极等的金属薄膜而向金属添加氮原子而获得的层以及成为源电极和漏电极的金属薄膜即使在使用低电阻线材的情况下，也制备了没有由像素电极与上述电极的连接部分的高接触电阻引起的显示缺陷的电光元件。

32. 发明授权

US07915062B2 Method of manufacturing a TFT array substrate 有权
标题翻译：制造TFT阵列基板的方法
公开(公告)号：US07915062B2
公开(公告)日：2011-03-29
申请号：US11762398
申请日：2007-06-13
申请人： Shinichi Yano , Tadaki Nakahori , Nobuaki Ishiga
发明人： Shinichi Yano , Tadaki Nakahori , Nobuaki Ishiga
IPC分类号： H01L21/00 , H01L21/22
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.
摘要翻译： TFT阵列基板包括具有欧姆接触膜和形成在欧姆接触膜上的源电极和漏电极的TFT。它还包括与漏电极电连接的像素电极。源电极和漏极由含有Ni作为添加剂的Al合金制成。

33. 发明授权

US07470571B2 Thin film transistor array substrate and method of producing the same 有权
公开(公告)号：US07470571B2
公开(公告)日：2008-12-30
申请号：US11951832
申请日：2007-12-06
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

34. 发明授权

US10716218B2 Display device and method for manufacturing the same 有权
公开(公告)号：US10716218B2
公开(公告)日：2020-07-14
申请号：US13791655
申请日：2013-03-08
申请人： Masami Hayashi , Kenichi Miyamoto , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura
发明人： Masami Hayashi , Kenichi Miyamoto , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura
IPC分类号： H05K3/06 , G06F3/041 , H05K1/09 , G06F3/044
摘要： A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.

35. 发明授权

US08248564B2 Liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08248564B2
公开(公告)日：2012-08-21
申请号：US12401226
申请日：2009-03-10
申请人： Shingo Nagano , Osamu Miyakawa , Nobuaki Ishiga
发明人： Shingo Nagano , Osamu Miyakawa , Nobuaki Ishiga
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , H01L27/124
摘要： A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.
摘要翻译：液晶显示装置包括位于基板上方的栅极线，覆盖栅极线的栅极绝缘层，栅极绝缘层上方的源极线，覆盖源极线的层间绝缘层，梳状或狭缝形状的像素电极通过穿过层间绝缘层的接触孔电连接TFT的漏电极，第一对置电极放置在像素电极的下方并与其相对的绝缘层上，以产生与像素电极以及形成在与像素电极相同的层中并且在给定区域中与源极重叠的第二对电极以与像素电极产生面内电场。

36. 发明申请

US20080138921A1 LIQUID CRYSTAL DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20080138921A1
公开(公告)日：2008-06-12
申请号：US12029281
申请日：2008-02-11
申请人： Tadaki Nakahori , Nobuaki Ishiga , Kensuke Nagayama , Takuji Yoshida
发明人： Tadaki Nakahori , Nobuaki Ishiga , Kensuke Nagayama , Takuji Yoshida
IPC分类号： G02F1/13
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227
摘要： A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.
摘要翻译：液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

37. 发明申请

US20060261335A1 Liquid crystal display device 审中-公开
标题翻译：液晶显示装置
公开(公告)号：US20060261335A1
公开(公告)日：2006-11-23
申请号：US11360589
申请日：2006-02-24
申请人： Tadaki Nakahori , Yuusuke Uchida , Kensuke Nagayama , Nobuaki Ishiga
发明人： Tadaki Nakahori , Yuusuke Uchida , Kensuke Nagayama , Nobuaki Ishiga
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/133555 , G02F1/13439 , H01L27/14621
摘要： An object of the present invention is to provide a liquid crystal display device that is capable of preventing anomalous growth of a protective insulating film when the protective insulating film is formed to cover a conductive film that was formed by patterning an amorphous conductive film into given shape with a certain etchant. A liquid crystal display device according to an example of the present invention includes a glass substrate having a thin film transistor formed on its upper surface, a color filter substrate having an opposing electrode formed on its upper surface, and a liquid crystal sandwiched between the glass substrate and the color filter substrate. A pixel electrode is connected to the drain electrode of a thin film transistor. Also, the pixel electrode is covered by a protective insulating film having transparency. The pixel electrode contains an oxide compound containing In and Zn.
摘要翻译：本发明的目的是提供一种液晶显示装置，其能够防止当形成保护绝缘膜以覆盖通过将非晶导电膜图案化为给定形状而形成的导电膜时的保护绝缘膜的异常生长有一定的蚀刻剂。根据本发明的实施例的液晶显示装置包括：玻璃基板，其上表面形成有薄膜晶体管;滤色器基板，其上表面形成有相对的电极;夹在玻璃板之间的液晶基板和滤色器基板。像素电极连接到薄膜晶体管的漏电极。此外，像素电极被具有透明性的保护绝缘膜覆盖。像素电极含有含有In和Zn的氧化物。

38. 发明授权

US07323713B2 Thin film transistor array substrate and method of producing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US07323713B2
公开(公告)日：2008-01-29
申请号：US11189980
申请日：2005-07-27
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
摘要翻译：一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

39. 发明申请

US20060022199A1 Thin film transistor array substrate and method of producing the same 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20060022199A1
公开(公告)日：2006-02-02
申请号：US11189980
申请日：2005-07-27
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
摘要翻译：一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

40. 发明申请

US20080118996A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20080118996A1
公开(公告)日：2008-05-22
申请号：US11951832
申请日：2007-12-06
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L21/28
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
摘要翻译：一种制造薄膜晶体管阵列基板的方法，该薄膜晶体管阵列基板包括绝缘基板，具有连接到漏电极的像素电极的显示像素，栅极布线和垂直于栅极布线的源极布线，包括形成第一薄金属多其上层包括铝，并铺展光致抗蚀剂，在与第二薄金属膜连接的区域中形成光刻胶的厚度小于其它区域，图案化第一薄金属膜，减少去除该区域中的光致抗蚀剂，去除该区域中的上层以暴露下层，形成层间绝缘膜并将其图案化以暴露该区域中的下层，并将该图案化第二薄金属膜包括该区域，以将下层连接到第二薄金属膜。

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