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31. 发明申请

US20060119982A1 Magnetic head having an antistripping layer for preventing a magnetic layer from stripping 审中-公开
标题翻译：具有用于防止磁性层剥离的抗转移层的磁头
公开(公告)号：US20060119982A1
公开(公告)日：2006-06-08
申请号：US11329919
申请日：2006-01-10
申请人： Hiroaki Honjo , Tsutomu Ishi , Mikiko Saito , Shinsaku Saito , Tamaki Toba , Yoshihiro Nonaka , Kazuhiko Hayashi , Nobuyuki Ishiwata
发明人： Hiroaki Honjo , Tsutomu Ishi , Mikiko Saito , Shinsaku Saito , Tamaki Toba , Yoshihiro Nonaka , Kazuhiko Hayashi , Nobuyuki Ishiwata
IPC分类号： G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3103 , G11B5/3109 , G11B5/3116 , G11B5/3133 , G11B5/314 , G11B5/3143 , G11B5/3163 , G11B5/3967 , G11B5/40 , G11B2005/3996 , Y10T29/49044
摘要： By inserting a first antistripping layer comprising a first non-magnetic layer 22 and a first conductive layer 23 between a first magnetic layer 16 and a magnetic separation layer 13, adhesion between the first conductive layer 23 and the magnetic separation layer 13 is improved to prevent the first magnetic layer 16 from stripping. In addition, by inserting a second antistripping layer comprising a second non-magnetic layer 24 and a second conductive layer 25 between a second magnetic layer 21 and a magnetic gap layer 17, adhesion between the second conductive layer 24 and the magnetic gap layer 17 is improved to prevent the second magnetic layer 25 from stripping.
摘要翻译：通过在第一磁性层16和磁分离层13之间插入包括第一非磁性层22和第一导电层23的第一抗锯齿层，改善了第一导电层23和磁性分离层13之间的粘附，以防止来自剥离的第一磁性层16。此外，通过在第二磁性层21和磁隙层17之间插入包括第二非磁性层24和第二导电层25的第二抗锯齿层，第二导电层24和磁隙层17之间的粘附是改进以防止第二磁性层25剥离。

32. 发明授权

US06791794B2 Magnetic head having an antistripping layer for preventing a magnetic layer from stripping 有权
标题翻译：具有用于防止磁性层剥离的抗转移层的磁头
公开(公告)号：US06791794B2
公开(公告)日：2004-09-14
申请号：US10113608
申请日：2002-04-01
申请人： Hiroaki Honjo , Tsutomu Ishi , Mikiko Saito , Shinsaku Saito , Tamaki Toba , Yoshihino Nonaka , Kazuhiko Hayashi , Nobuyuki Ishiwata
发明人： Hiroaki Honjo , Tsutomu Ishi , Mikiko Saito , Shinsaku Saito , Tamaki Toba , Yoshihino Nonaka , Kazuhiko Hayashi , Nobuyuki Ishiwata
IPC分类号： G11B5147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3103 , G11B5/3109 , G11B5/3116 , G11B5/3133 , G11B5/314 , G11B5/3143 , G11B5/3163 , G11B5/3967 , G11B5/40 , G11B2005/3996 , Y10T29/49044
摘要： By inserting a first antistripping layer comprising a first non-magnetic layer 22 and a first conductive layer 23 between a first magnetic layer 16 and a magnetic separation layer 13, adhesion between the first conductive layer 23 and the magnetic separation layer 13 is improved to prevent the first magnetic layer 16 from stripping. In addition, by inserting a second antistripping layer comprising a second non-magnetic layer 24 and a second conductive layer 25 between a second magnetic layer 21 and a magnetic gap layer 17, adhesion between the second conductive layer 24 and the magnetic gap layer 17 is improved to prevent the second magnetic layer 25 from stripping.
摘要翻译：通过在第一磁性层16和磁分离层13之间插入包括第一非磁性层22和第一导电层23的第一抗锯齿层，改善了第一导电层23和磁性分离层13之间的粘附，以防止来自剥离的第一磁性层16。此外，通过在第二磁性层21和磁隙层17之间插入包括第二非磁性层24和第二导电层25的第二抗锯齿层，第二导电层24和磁隙层17之间的粘附是改进以防止第二磁性层25剥离。

33. 发明授权

US07023659B2 Magnetic head having an antistripping layer for preventing a magnetic layer from stripping 有权
公开(公告)号：US07023659B2
公开(公告)日：2006-04-04
申请号：US10815069
申请日：2004-03-31
申请人： Hiroaki Honjo , Tsutomu Ishi , Mikiko Saito , Shinsaku Saito , Tamaki Toba , Yoshihiro Nonaka , Kazuhiko Hayashi , Nobuyuki Ishiwata
发明人： Hiroaki Honjo , Tsutomu Ishi , Mikiko Saito , Shinsaku Saito , Tamaki Toba , Yoshihiro Nonaka , Kazuhiko Hayashi , Nobuyuki Ishiwata
IPC分类号： G11B5/147
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/3103 , G11B5/3109 , G11B5/3116 , G11B5/3133 , G11B5/314 , G11B5/3143 , G11B5/3163 , G11B5/3967 , G11B5/40 , G11B2005/3996 , Y10T29/49044
摘要： By inserting a first antistripping layer comprising a first non-magnetic layer 22 and a first conductive layer 23 between a first magnetic layer 16 and a magnetic separation layer 13, adhesion between the first conductive layer 23 and the magnetic separation layer 13 is improved to prevent the first magnetic layer 16 from stripping. In addition, by inserting a second antistripping layer comprising a second non-magnetic layer 24 and a second conductive layer 25 between a second magnetic layer 21 and a magnetic gap layer 17, adhesion between the second conductive layer 24 and the magnetic gap layer 17 is improved to prevent the second magnetic layer 25 from stripping.

34. 发明授权

US06452762B1 Magneto-resistive element and production method thereof, magneto-resistive head, and magnetic recording/reproducing apparatus 失效
标题翻译：磁阻元件及其制造方法，磁阻头和磁记录/重放装置
公开(公告)号：US06452762B1
公开(公告)日：2002-09-17
申请号：US09535742
申请日：2000-03-27
申请人： Kazuhiko Hayashi , Masafumi Nakada
发明人： Kazuhiko Hayashi , Masafumi Nakada
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： The present invention provides a magneto-resistive (MR) element comprising: a first magnetic layer 1 provided on a substrate; a non-magnetic layer 3 arranged to be in contact with the first magnetic layer; and a second magnetic layer 2 arranged to be in contact with the non-magnetic layer; wherein sense current flowing in the first and the second magnetic layer is changed by a resistance change according to an external magnetic field, and a sense current flowing distance in the first magnetic layer and/or a sense current flowing distance in the second magnetic layer is longer than a sense current flowing distance in a superimposed portion of the first magnetic layer, the non-magnetic layer, and the second magnetic layer.
摘要翻译：本发明提供了一种磁阻（MR）元件，包括：设置在基板上的第一磁性层1; 布置成与第一磁性层接触的非磁性层3; 以及布置成与非磁性层接触的第二磁性层2; 其中在第一和第二磁性层中流动的感测电流根据外部磁场的电阻变化而改变，并且第二磁性层中的第一磁性层中的感测电流流动距离和/或感测电流流动距离为比在第一磁性层，非磁性层和第二磁性层的叠加部分中的感测电流流动距离长。

35. 发明授权

US5932343A Magnetic resistance effect element and method for manufacture thereof 失效
标题翻译：磁阻效应元件及其制造方法
公开(公告)号：US5932343A
公开(公告)日：1999-08-03
申请号：US909770
申请日：1997-08-12
申请人： Kazuhiko Hayashi , Masafumi Nakada
发明人： Kazuhiko Hayashi , Masafumi Nakada
IPC分类号： G01R33/09 , G11B5/012 , G11B5/02 , G11B5/39 , H01L43/08 , G11B5/66
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： A magnetoresistive effect element has an NiO layer, an intermediate layer, a first ferromagnetic layer, a first MR enhancement layer, a non-magnetic layer, a second MR enhancement layer, a second ferromagnetic layer, and a protective layer, laminated in sequence onto an underlayer, the intermediate layer being made of a mixture of nickel oxide and a ferrous oxide materials.
摘要翻译：磁阻效应元件具有依次层叠的NiO层，中间层，第一铁磁层，第一MR增强层，非磁性层，第二MR增强层，第二铁磁层和保护层，底层，中间层由氧化镍和氧化亚铁材料的混合物制成。

36. 发明授权

US06775110B1 Magnetoresistance effect device with a Ta, Hf, or Zr sublayer contacting an NiFe layer in a magneto resistive structure 失效
标题翻译：具有与磁阻结构中的NiFe层接触的Ta，Hf或Zr子层的磁阻效应器件
公开(公告)号：US06775110B1
公开(公告)日：2004-08-10
申请号：US09076111
申请日：1998-05-12
申请人： Kazuhiko Hayashi , Shigeru Mori , Masafumi Nakada
发明人： Kazuhiko Hayashi , Shigeru Mori , Masafumi Nakada
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/012 , G11B5/3903 , G11B2005/3996 , H01F1/0572 , H01F10/30 , H01F10/3268 , H01F10/3295
摘要： A magnetoresistance effect device has the basic structure of substrate/sublayer/NiFe layer/CoFe layer/non-magnetic layer/fixed magnetic layer/antiferromagnetic layer. The sublayer may be Ta at a film thickness of not less than 0.2 nm but less than 3.0 nm, or Hf at a film thickness of not less than 0.2 nm but not greater than 1.5 nm, or Zr at a film thickness of not less than 0.2 nm but not greater than 2.5 nm. It is permissible to use only an NiFe layer instead of the NiFe layer/CoFe layer.
摘要翻译：磁阻效应器件具有基板/子层/ NiFe层/ CoFe层/非磁性层/固定磁性层/反铁磁层的基本结构。子层可以是不小于0.2nm但小于3.0nm的膜厚度的Ta或膜厚度不小于0.2nm但不大于1.5nm的Hf，或者膜厚度不小于 0.2nm但不大于2.5nm。可以仅使用NiFe层代替NiFe层/ CoFe层。

37. 发明授权

US6022633A Magnetoresistive effect element and magnetoresistive effect sensor 失效
标题翻译：磁阻效应元件和磁阻效应传感器
公开(公告)号：US6022633A
公开(公告)日：2000-02-08
申请号：US961199
申请日：1997-10-30
申请人： Kazuhiko Hayashi , Masafumi Nakada
发明人： Kazuhiko Hayashi , Masafumi Nakada
IPC分类号： G11B5/39 , H01F10/08 , H01F10/32 , H01L43/08 , G11B5/66
CPC分类号： G11B5/3906 , Y10S428/90 , Y10T428/1121
摘要： A magnetoresistive effect element having a lamination structure of a free magnetic layer, a non-magnetic layer in contact with the free magnetic layer, a pinned magnetic layer in contact with the non-magnetic layer, and an anti-ferromagnetic layer in contact with the pinned magnetic layer, wherein the product of a saturation magnetization of the pinned magnetic layer and a thickness of the pinned magnetic layer is not higher than 2.times.10.sup.-9 T.multidot.m. The pinned magnetic layer may include a lanthanide metal.
摘要翻译：具有自由磁性层，与自由磁性层接触的非磁性层，与非磁性层接触的被钉扎的磁性层和与该非磁性层接触的反铁磁性层的层叠结构的磁阻效应元件钉扎磁性层，其中被钉扎的磁性层的饱和磁化强度和被钉扎的磁性层的厚度的乘积不高于2×10-9Txm。被钉扎的磁性层可以包括镧系元素金属。

38. 发明授权

US06063491A Magnetoresistance effects film 失效
标题翻译：磁阻效应胶片
公开(公告)号：US06063491A
公开(公告)日：2000-05-16
申请号：US38093
申请日：1998-03-11
申请人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
发明人： Jun-Ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
IPC分类号： G01R33/09 , G11B5/39 , H01F10/08 , H01F10/18 , H01F10/28 , H01F10/32 , H01L43/08 , G11B5/66
CPC分类号： H01L43/08 , Y10S428/90 , Y10T428/1121 , Y10T428/26 , Y10T428/265
摘要： The invention provides a magnetoresistance effects film including (a) at least two thin magnetic films deposited on a substrate, (b) at least one thin nonmagnetic film interposed between the thin magnetic films, and (c) a thin antiferromagnetic film disposed adjacent to one of the thin magnetic films between which the thin nonmagnetic film is interposed. A bias magnetic field of one of the thin magnetic films induced by the thin antiferromagnetic film has an intensity Hr greater than a coercivity H.sub.C2 of the other of the thin magnetic films which is remote from the thin antiferromagnetic film (Hr>H.sub.C2). The thin antiferromagnetic film has a superlattice structure composed of at least two of NiO, Ni.sub.x Co.sub.1-x O(x=0.1-0.9) and CoO. A ratio of Ni relative to Co in the number of atoms in the superlattice structure is set equal to or greater than 1.0. The magnetoresistance effects film exhibits large linear change in resistance with the hysteresis being small even when a small external field is applied thereto.
摘要翻译：本发明提供了一种磁电阻效应膜，其包括（a）沉积在基板上的至少两个薄磁膜，（b）介于薄磁膜之间的至少一个薄非磁性膜，（c）与一个薄的反铁磁膜的薄磁性膜，薄的非磁性膜被插入其间。由薄的反铁磁膜引起的薄磁膜之一的偏磁场的强度Hr大于远离薄反铁磁膜（Hr> HC2）的另一个薄磁膜的矫顽力HC2。薄的反铁磁膜具有由NiO，NixCo1-xO（x = 0.1-0.9）和CoO中的至少两种构成的超晶格结构。超晶格结构中的原子数相对于Co的比例设定为1.0以上。即使施加小的外部场，磁阻效应膜也呈现大的电阻线性变化，滞后小。

39. 发明授权

US06001430A Magnetoresistance effect film and production process thereof 失效
公开(公告)号：US06001430A
公开(公告)日：1999-12-14
申请号：US166896
申请日：1998-10-06
申请人： Jun-ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
发明人： Jun-ichi Fujikata , Kazuhiko Hayashi , Hidefumi Yamamoto , Kunihiko Ishihara
IPC分类号： G01R33/09 , G11B5/39 , H01F10/32 , H01F1/00
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3272 , G11B2005/3996
摘要： A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, Ni.sub.x Co.sub.1-x O (0.1.ltoreq.x.ltoreq.0.9) and C.sub.o O. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc.sub.2 of the other ferromagnetic thin film.

40. 发明授权

US5942341A Magnetoresistive element 失效
标题翻译：磁阻元件
公开(公告)号：US5942341A
公开(公告)日：1999-08-24
申请号：US730272
申请日：1996-10-15
申请人： Kazuhiko Hayashi , Hidefumi Yamamoto , Jun-ichi Fujikata , Kunihiko Ishihara
发明人： Kazuhiko Hayashi , Hidefumi Yamamoto , Jun-ichi Fujikata , Kunihiko Ishihara
IPC分类号： C23C28/02 , B32B9/00
CPC分类号： C23C28/021 , C23C28/023 , Y10T428/1121 , Y10T428/12465 , Y10T428/12861 , Y10T428/12889 , Y10T428/12896 , Y10T428/1291 , Y10T428/12917 , Y10T428/12937
摘要： A magnetoresistive element includes a first magnetic layer; and laminations of a second magnetic layer, a non-magnetic layer and a third magnetic layer. The laminations are adjacent to the first magnetic layer. The second magnetic layer and the third magnetic layer have different coercive forces, wherein the first magnetic layer is selected from CoCrTa, NdFe, and alloys thereof.
摘要翻译：磁阻元件包括第一磁性层; 以及第二磁性层，非磁性层和第三磁性层的叠片。叠片与第一磁性层相邻。第二磁性层和第三磁性层具有不同的矫顽力，其中第一磁性层选自CoCrTa，NdFe及其合金。

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