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31. 发明授权

US08298628B2 Low temperature deposition of silicon-containing films 有权
标题翻译：含硅薄膜的低温沉积
公开(公告)号：US08298628B2
公开(公告)日：2012-10-30
申请号：US12476734
申请日：2009-06-02
申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
发明人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185
摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要翻译：本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

32. 发明授权

US08025931B2 Film formation apparatus for semiconductor process and method for using the same 有权
标题翻译：用于半导体工艺的成膜装置及其使用方法
公开(公告)号：US08025931B2
公开(公告)日：2011-09-27
申请号：US11822979
申请日：2007-07-11
申请人： Pao-Hwa Chou , Kazuhide Hasebe
发明人： Pao-Hwa Chou , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/4405
摘要： A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.
摘要翻译：使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。

33. 发明授权

US07993705B2 Film formation apparatus and method for using the same 有权
标题翻译：成膜装置及其使用方法
公开(公告)号：US07993705B2
公开(公告)日：2011-08-09
申请号：US11819500
申请日：2007-06-27
申请人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
发明人： Nobutake Nodera , Kazuhide Hasebe , Kazuya Yamamoto
IPC分类号： C23C16/56 , C23C16/00 , C23C16/54 , B08B7/00 , B08B7/04
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for using a film formation apparatus includes performing film formation of a product film selected from the group consisting of a silicon nitride film and a silicon oxynitride film on a target substrate within a reaction chamber of the film formation apparatus; and unloading the target substrate from the reaction chamber. Thereafter, the method includes first heating an inner surface of the reaction chamber at a post process temperature while supplying a post process gas for nitridation into the reaction chamber, thereby performing nitridation of a by-product film deposited on the inner surface of the reaction chamber; then rapidly cooling the inner surface of the reaction chamber, thereby cracking the by-product film by a thermal stress; and then forcibly exhausting gas from inside the reaction chamber to carry the by-product film, thus peeled off from the inner surface.
摘要翻译：使用成膜装置的方法包括在成膜装置的反应室内的目标基板上进行选自由氮化硅膜和氮氧化硅膜组成的组中的产品膜的成膜; 并从反应室卸载目标衬底。此后，该方法包括在后处理温度下先加热反应室的内表面，同时向反应室供应用于氮化的后处理气体，从而对沉积在反应室内表面上的副产物膜进行氮化 ; 然后快速冷却反应室的内表面，从而通过热应力裂解副产物膜; 然后从反应室内强制排出气体以携带副产物膜，从而从内表面剥离。

34. 发明授权

US07964241B2 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US07964241B2
公开(公告)日：2011-06-21
申请号：US11892948
申请日：2007-08-28
申请人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
发明人： Kazuhide Hasebe , Pao-Hwa Chou , Kota Umezawa , Kentaro Kadonaga , Hao-Hsiang Chang
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译：通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体和含有碳氢化合物气体的第四工艺气体。第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体。第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。

35. 发明授权

US07923378B2 Film formation method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的成膜方法和装置
公开(公告)号：US07923378B2
公开(公告)日：2011-04-12
申请号：US12320535
申请日：2009-01-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

36. 发明申请

US20100319619A1 OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 审中-公开
标题翻译：氧化方法和半导体工艺的设备
公开(公告)号：US20100319619A1
公开(公告)日：2010-12-23
申请号：US12852692
申请日：2010-08-09
申请人： Takehiko FUJITA , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
发明人： Takehiko FUJITA , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： C23C16/52 , C23C16/22
CPC分类号： C30B33/005 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
摘要翻译：在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。一种或两种氧化气体和脱氧气体被激活。使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

37. 发明申请

US20100130015A1 PATTERNING METHOD 有权
标题翻译：绘图方法
公开(公告)号：US20100130015A1
公开(公告)日：2010-05-27
申请号：US12441754
申请日：2008-06-06
申请人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
发明人： Shigeru Nakajima , Kazuhide Hasebe , Pao-Hwa Chou , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/32
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
摘要翻译：公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过向所述基板交替地供给含有有机硅的第一气体和含有活性氧的第二气体，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。

38. 发明授权

US07651733B2 Method for forming a vapor phase growth film 有权
标题翻译：形成气相生长膜的方法
公开(公告)号：US07651733B2
公开(公告)日：2010-01-26
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体喷出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

39. 发明申请

US20090191722A1 Film formation method and apparatus for semiconductor process 有权
标题翻译：用于半导体工艺的成膜方法和装置
公开(公告)号：US20090191722A1
公开(公告)日：2009-07-30
申请号：US12320018
申请日：2009-01-14
申请人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Nobutake Nodera , Masanobu Matsunaga , Jun Satoh , Pao-Hwa Chou
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译：使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。

40. 发明申请

US20090104760A1 VERTICAL CVD APPPARATUS FOR FORMING SILICON-GERMANIUM FILM 失效
标题翻译：用于形成硅 - 锗膜的垂直CVD涂层
公开(公告)号：US20090104760A1
公开(公告)日：2009-04-23
申请号：US12341642
申请日：2008-12-22
申请人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： H01L21/205
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

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