会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明授权
    • Aluminum alloy piping material for automotive piping excelling in corrosion resistance and workability
    • 用于汽车管道的铝合金管道材料具有优异的耐腐蚀性和可加工性
    • US06638377B2
    • 2003-10-28
    • US09954430
    • 2001-09-17
    • Takahiro KoyamaHirokazu TanakaYoshifusa Shoji
    • Takahiro KoyamaHirokazu TanakaYoshifusa Shoji
    • C22C2100
    • C22F1/04C22C21/00F16L9/02
    • An aluminum alloy piping material for automotive piping excelling in corrosion resistance and workability and a method of fabricating the same. The aluminum alloy piping material is made of an aluminum alloy which contains 0.3-1.5% of Mn, 0.01-0.20% of Fe, and 0.01-0.20% of Si, wherein the content of Cu as impurities is limited to 0.05% or less, with the balance being Al and impurities, wherein, among Si compounds, Fe compounds, and Mn compounds present in the alloy's matrix, the number of compounds with a particle diameter (equivalent circle diameter, hereinafter the same) of 0.5 &mgr;m or more is 3×104 or less per mm2. The aluminum alloy piping material has a tensile strength of 70-130 MPa (temper: O material). An ingot of an aluminum alloy having the composition is hot extruded. The resulting extruded pipe is cold drawn at a working ratio of 30% or more and annealed.
    • 一种用于汽车管道的铝合金管道材料,其耐腐蚀性和加工性优良,且其制造方法。 铝合金管材由铝合金制成,其含有0.3-1.5%的Mn,0.01-0.20%的Fe和0.01-0.20%的Si,其中作为杂质的Cu的含量被限制在0.05%以下, 余量为Al和杂质,其中,在Si化合物中,Fe化合物和存在于合金基体中的Mn化合物中,粒径(当量圆直径,以下相同)为0.5μm以上的化合物的数量为3×10 <4>以下/ mm 2。 铝合金管材的拉伸强度为70-130MPa(回火:O材料)。 具有该组成的铝合金锭被热挤压。 将得到的挤出管以30%以上的加工率进行冷拉伸并退火。
    • 37. 发明授权
    • Peptide compounds, their preparation and uses
    • 肽化合物,其制备和用途
    • US5888972A
    • 1999-03-30
    • US564271
    • 1997-06-24
    • Keiji Hemmi, deceasedMasahiro NeyaNaoki FukamiNatsuko KayakiriHirokazu Tanaka
    • Keiji Hemmi, deceasedMasahiro NeyaNaoki FukamiNatsuko KayakiriHirokazu Tanaka
    • A61K38/00A61P9/12C07K5/02C07K5/03C07K5/062C07K5/08C07K5/083A61K38/06A61K38/07
    • C07K5/0808C07K5/0207C07K5/0827A61K38/00Y02P20/55
    • A compound of the formula: ##STR1## in which R.sup.4 is acyl,R.sup.5 is lower alkyl,R.sup.6 is optionally substituted ar(lower)alkyl or optionally substituted heterocyclic-(lower)alkyl,R.sup.7 is lower alkyl or lower alkylthio(lower)alkyl,R.sup.8 is carboxy or protected carboxy,A is lower alkylene,Z is a group of the formula: ##STR2## wherein R.sup.1 is hydrogen, lower alkyl, common amino-protective group or optionally substituted ar(lower)alkyl,R.sup.2 is hydrogen, lower alkyl, optionally substituted ar(lower)alkyl, optionally substituted heterocyclic-(lower)alkyl, optionally substituted cyclo(lower)alkyl(lower)alkyl, common amino-protective group, amino(or protected amino)(lower)alkyl, optionally substituted heterocyclic-carbonyl or cyclo(lower)alkyl, andR.sup.3 is optionally substituted heterocyclic(lower)alkyl, andm is an integer of 0 to 2,or pharmaceutically acceptable salts thereof, useful as endothelin antagonist.
    • PCT No.PCT / JP94 / 01042 Sec。 371日期1996年6月24日 102(e)1996年6月24日PCT 1994年6月28日PCT公布。 公开号WO95 / 00537 日期1995年1月5日具有下式的化合物:其中R 4为酰基,R 5为低级烷基,R 6为任选取代的芳(低级)烷基或任选取代的杂环 - (低级)烷基,R 7为低级烷基或低级 烷硫基(低级)烷基,R 8为羧基或被保护的羧基,A为低级亚烷基,Z为下式基团:其中R 1为氢,低级烷基,普通氨基保护基或任选取代的芳(低级)烷基 (低级)烷基,任选取代的杂环 - (低级)烷基,任选取代的环(低级)烷基(低级)烷基,常用氨基保护基,氨基(或被保护的氨基)( 低级烷基,任选取代的杂环羰基或环(低级)烷基,R 3为任选取代的杂环(低级)烷基,m为0-2的整数,或其药学上可接受的盐,可用作内皮素拮抗剂。
    • 39. 发明授权
    • Output circuit having at least one external transistor
    • 输出电路具有至少一个外部晶体管
    • US5663673A
    • 1997-09-02
    • US413947
    • 1995-03-30
    • Hirokazu TanakaTatsuo KumanoTetsuji FunakiTakahiro Watai
    • Hirokazu TanakaTatsuo KumanoTetsuji FunakiTakahiro Watai
    • H03G5/16H03F1/30H03F3/30H03F3/45H04M19/00H03F3/26H03K17/16
    • H03F3/3071H03F1/307
    • An output circuit, for minimizing output idle current fluctuations and improve the output voltage range, has first and second transistors connected to first and second power sources, with a plurality of diodes connected to control terminals of the first and second transistors. The output circuit further includes a third transistor having a first terminal connected to the second power source and a second terminal connected to a predetermined position among the plurality of diodes. A predetermined voltage is applied from the diodes to the control terminal of the first transistor when the third transistor is saturated, to bring a level of an output of said output circuit close to a level of the second power source. A fourth transistor, a fifth transistor, a first resistor, and a capacitor are also provided. The forth transistor has a control terminal connected to an output of a differential circuit, and a first terminal connected to the second power source through the first resistor as well as to the control terminals of the third and fifth transistors. A second terminal is connected to the first power source, with the fifth transistor having a first terminal connected to the second power source and a second terminal connected to the control terminal of the second transistor. The capacitor is connected between the control terminal of the fourth transistor and the second terminal of the fifth transistor. This output circuit also limits the output voltage without changing the impedance of the high-impedance input.
    • 用于最小化输出空闲电流波动并改善输出电压范围的输出电路具有连接到第一和第二电源的第一和第二晶体管,多个二极管连接到第一和第二晶体管的控制端子。 输出电路还包括具有连接到第二电源的第一端子和连接到多个二极管中的预定位置的第二端子的第三晶体管。 当第三晶体管饱和时,从二极管向第一晶体管的控制端施加预定电压,以使所述输出电路的输出电平接近第二电源的电平。 还提供第四晶体管,第五晶体管,第一电阻器和电容器。 第四晶体管具有连接到差分电路的输出的控制端子,以及通过第一电阻器连接到第二电源的第一端子以及第三和第五晶体管的控制端子。 第二端子连接到第一电源,第五晶体管具有连接到第二电源的第一端子和连接到第二晶体管的控制端子的第二端子。 电容器连接在第四晶体管的控制端和第五晶体管的第二端之间。 该输出电路还限制输出电压,而不改变高阻抗输入的阻抗。