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    • 34. 发明授权
    • Transducer design with a sensor close to write pole
    • 传感器设计与传感器接近写极
    • US08077424B2
    • 2011-12-13
    • US12473829
    • 2009-05-28
    • Yonghua ChenKaizhong Gao
    • Yonghua ChenKaizhong Gao
    • G11B21/02
    • G11B5/314B82Y10/00G11B5/012G11B5/02G11B5/743G11B5/746G11B5/82G11B20/10009G11B20/10222G11B2220/252
    • A magnetic device includes a read sensor, a writer and a synchronization sensor. The magnetic device is configured for writing information to and reading information from a magnetic medium that includes a plurality of discrete magnetic bits. The writer includes a write element, a first return element magnetically coupled to the write element, and a second return element magnetically coupled to the write element. The write element is positioned in between the first and second return elements. The synchronization sensor is located adjacent to the write element of the writer in a closely spaced arrangement, and is configured to generate a signal as a function of a sensed magnetic bit. The signal is used to position the writer element relative to the sensed magnetic bit.
    • 磁性装置包括读取传感器,写入器和同步传感器。 磁性装置被配置为向包括多个离散磁头的磁介质写入信息并从其读取信息。 写入器包括写元件,磁耦合到写元件的第一返回元件和磁耦合到写元件的第二返回元件。 写元件位于第一和第二返回元件之间。 同步传感器以紧密间隔的布置位于写入器的写入元件附近,并且被配置为根据检测到的磁性位产生信号。 该信号用于将写入器元件相对于感测的磁性位置定位。
    • 38. 发明申请
    • STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    • 具有补偿元件的条纹及其制造方法
    • US20110194343A1
    • 2011-08-11
    • US13086613
    • 2011-04-14
    • Kaizhong GaoHaiwen XiWenzhong ZhuOlle Heinonen
    • Kaizhong GaoHaiwen XiWenzhong ZhuOlle Heinonen
    • G11C11/14G11B5/66
    • G01R33/093B82Y25/00G01R33/1284G11C11/161G11C11/1675
    • Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
    • 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。