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    • 38. 发明申请
    • Method of manufacturing flash memory device
    • 制造闪存设备的方法
    • US20070122973A1
    • 2007-05-31
    • US11489392
    • 2006-07-19
    • Jung Lee
    • Jung Lee
    • H01L21/336
    • H01L29/42324H01L21/76232H01L27/115H01L27/11521
    • A method of manufacturing a flash memory device, wherein, when a first polysilicon layer is formed, a doped polysilicon layer and an amorphous polysilicon layer are formed so that they are laminated. A process of forming a sidewall oxide film and an oxide film and a thermal treatment process are performed to form the profile of the first polysilicon layer negatively. It is therefore possible to prevent the remnants of the first polysilicon layer below the isolation film. Accordingly, a failure in which the floating gates adjacent in the direction of the isolation film are connected by the remnants of the first polysilicon layer can be prevented.
    • 一种制造闪速存储器件的方法,其中当形成第一多晶硅层时,形成掺杂多晶硅层和非晶多晶硅层,使得它们被层压。 进行形成侧壁氧化膜和氧化膜的工艺以及热处理工艺,以形成第一多晶硅层的轮廓。 因此,可以防止隔离膜下面的第一多晶硅层的残留物。 因此,可以防止在隔离膜的方向上相邻的浮置栅极与第一多晶硅层的残留物相连接的故障。
    • 39. 发明申请
    • Controlling mobile station response to a common rate control command
    • 控制移动台对普通速率控制命令的响应
    • US20070066335A1
    • 2007-03-22
    • US11228721
    • 2005-09-16
    • Jung Lee
    • Jung Lee
    • H04B7/00H04Q7/20
    • H04L5/1446H04W52/267H04W52/34
    • A wireless communication system (20) includes an overload control technique that comprises selectively controlling whether a mobile station (30-40) will respond to a common rate control command. In a disclosed example, a statistical rate control is used such that each mobile station responds to the relative grant based upon a probability that the mobile station should respond. A disclosed example includes selecting two control parameters that influence the probability that a mobile station will respond. The probability in one example is dependent on the data rate currently being used by the mobile station when receiving the relative grant.
    • 无线通信系统(20)包括过载控制技术,其包括选择性地控制移动站(30-40)是否将响应于公共速率控制命令。 在公开的示例中,使用统计速率控制,使得每个移动台基于移动台应该响应的概率来响应相对授权。 所公开的示例包括选择影响移动台将响应的概率的两个控制参数。 一个示例中的概率取决于当接收相对授权时移动台当前使用的数据速率。
    • 40. 发明申请
    • Transflective liquid crystal display device and method of fabricating the same
    • 反射式液晶显示装置及其制造方法
    • US20070058116A1
    • 2007-03-15
    • US11372081
    • 2006-03-10
    • Jung LeeJoon Yang
    • Jung LeeJoon Yang
    • G02F1/1335
    • G02F1/133555G02F1/133371G02F1/13439G02F2001/136231G02F2201/123G02F2203/02
    • An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode.
    • 一种半透射型液晶显示装置的阵列基板,包括:基板; 栅极线和数据线,栅极线和数据线彼此交叉以限定包括透射区域和围绕透射区域的反射区域的像素区域; 具有栅极绝缘层的薄膜晶体管,所述薄膜晶体管电连接到所述栅极线和所述数据线; 具有暴露所述薄膜晶体管的漏电极的漏极接触孔和在所述透射区域中暴露所述衬底的通孔的第一钝化层; 所述第一钝化层上的像素电极,所述像素电极通过所述通孔与所述透射区域中的所述基板接触; 以及像素电极上的反射板,反射板通过漏极接触孔和像素电极与漏电极电连接。