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31. 发明申请

US20070141431A1 Fuel cell closed structure 审中-公开
标题翻译：燃料电池封闭结构
公开(公告)号：US20070141431A1
公开(公告)日：2007-06-21
申请号：US11314619
申请日：2005-12-21
申请人： Shengxian Wang , Qijia Fu , Chang Wei , Jun Cai
发明人： Shengxian Wang , Qijia Fu , Chang Wei , Jun Cai
IPC分类号： H01M8/02 , H01M8/08 , H01M4/94 , H01M8/06
CPC分类号： H01M12/08 , H01M2/025 , H01M4/242 , H01M4/385 , H01M8/04089 , H01M8/083 , H01M8/186 , H01M8/2475 , H01M10/281 , H01M10/282 , H01M10/345 , H01M2300/0014 , Y02E60/128
摘要： A galvanic cell with a closed structure is provided. The cell may include a galvanic cell unit having a metal hydride anode, separators positioned on opposite sides of the metal hydride anode, oxygen electrodes positioned adjacent to the separators on sides opposite to the metal hydride anode, insulator plates positioned in contact with the oxygen electrodes, an electrolyte in contact with any one or more of the metal hydride anode, oxygen electrodes, insulator plates, or separators, and a pressure vessel enclosing the galvanic cell unit.
摘要翻译：提供具有闭合结构的电池。电池可以包括具有金属氢化物阳极的电池单元，位于金属氢化物阳极的相对侧上的隔板，与金属氢化物阳极相对的侧面与隔板相邻的氧电极，与氧电极相接触的绝缘板与金属氢化物阳极，氧电极，绝缘体板或隔板中的任何一个或多个接触的电解质以及包围原电池单元的压力容器。

32. 发明申请

US20070141415A1 FUEL CELL APPARATUS AND ASSOCIATED METHOD 失效
标题翻译：燃料电池装置及相关方法
公开(公告)号：US20070141415A1
公开(公告)日：2007-06-21
申请号：US11566347
申请日：2006-12-04
申请人： Hai Yang , Chang Wei , Qunjian Huang , Jinghua Liu , Rihua Xiong , Jun Cai , Shengxian Wang
发明人： Hai Yang , Chang Wei , Qunjian Huang , Jinghua Liu , Rihua Xiong , Jun Cai , Shengxian Wang
IPC分类号： H01M8/04 , H01M4/96 , H01M8/06 , H01M4/90
CPC分类号： H01M12/005 , H01G9/08 , H01G9/155 , H01M8/04119 , H01M8/04216 , H01M8/18 , H01M12/06 , Y02E60/13
摘要： An apparatus including a housing having walls is provided. The walls of the housing each have inner surfaces and outer surfaces. The walls may include apertures extending from the inner surface to the outer surface. The inner surfaces of the walls define a volume. The volume includes an electrode. The volume further includes a water-controlling separator disposed between the inner surface of the housing and the electrode. The water-controlling separator can block a flow of liquid from the electrode through the apertures to the ambient environment while allowing oxidant to flow from the ambient environment through the apertures to the electrode.
摘要翻译：提供一种包括具有壁的壳体的装置。壳体的壁各自具有内表面和外表面。壁可以包括从内表面延伸到外表面的孔。壁的内表面定义一个体积。体积包括电极。体积还包括设置在壳体的内表面和电极之间的防水分离器。水控制分离器可以阻止液体从电极通过孔流到周围环境，同时允许氧化剂从周围环境通过孔流动到电极。

33. 发明申请

US20060118814A1 HIGH-VOLTAGE DIODES FORMED IN ADVANCED POWER INTEGRATED CIRCUIT DEVICES 有权
标题翻译：高功率集成电路器件中形成的高压二极管
公开(公告)号：US20060118814A1
公开(公告)日：2006-06-08
申请号：US11005755
申请日：2004-12-07
申请人： Jun Cai , Micheal Harley-Stead , Jim Holt
发明人： Jun Cai , Micheal Harley-Stead , Jim Holt
IPC分类号： H01L29/43
CPC分类号： H01L29/861 , H01L29/7391
摘要： A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
摘要翻译：在第一导电类型的衬底上的二极管连接的横向晶体管包括垂直寄生晶体管，寄生衬底漏电流通过该垂直寄生晶体管流动。提供了用于分流远离垂直寄生晶体管的寄生衬底泄漏电流的至少一部分的装置。

34. 发明申请

US20050148124A1 ESD protection for semiconductor products 有权
标题翻译：半导体产品的ESD保护
公开(公告)号：US20050148124A1
公开(公告)日：2005-07-07
申请号：US11054189
申请日：2005-02-09
申请人： Jun Cai , Alvin Sugerman , Steven Park
发明人： Jun Cai , Alvin Sugerman , Steven Park
IPC分类号： H01L20060101 , H01L21/338 , H01L23/62 , H01L27/02 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7833 , H01L27/0266
摘要： A process for forming a vertical DMOS device with an ESD protection transistor that is configured for carrying a breakdown current includes the steps of masking a substrate of a first polarity type and forming spaced apart surface isolation regions. An insulated gate is formed between the spaced apart surface isolation regions. Selected portions of the surface regions between the gate and the surface isolation regions are heterodoped to form p-n junctions having retrograde doping profiles beneath the substrate surface thereby lowering the breakdown voltage beneath the heterodoped portions in order to direct a substantial portion of the breakdown current below the surface of the substrate and into the body of the substrate between the heterodoped regions. Source and drain regions are formed in the substrate surface on opposite sides of the gate.
摘要翻译：用于形成具有用于承载击穿电流的ESD保护晶体管的垂直DMOS器件的工艺包括以下步骤：掩蔽第一极性类型的衬底并形成间隔开的表面隔离区域。在间隔开的表面隔离区域之间形成绝缘栅极。在栅极和表面隔离区域之间的表面区域的选定部分被杂散以形成在衬底表面下方具有逆向掺杂分布的pn结，从而降低异质部分之下的击穿电压，以将击穿电流的大部分引导到低于衬底的表面并进入到异质区域之间的衬底的主体中。源极和漏极区域形成在栅极的相对侧上的衬底表面中。

35. 发明授权

US06787880B2 ESD parasitic bipolar transistors with high resistivity regions in the collector 有权
标题翻译：集电极中具有高电阻率区域的ESD寄生双极晶体管
公开(公告)号：US06787880B2
公开(公告)日：2004-09-07
申请号：US10437093
申请日：2003-05-13
申请人： David Hu , Jun Cai
发明人： David Hu , Jun Cai
IPC分类号： H01L218238
CPC分类号： H01L27/027
摘要： A method and a structure for a parasitic bipolar silicided ESD device that has high resistivity regions within the collector of the parasitic NPN. The device has the structure of a N-MOS transistor and a substrate contact. The device preferably has silicide regions over the doped regions. The invention has two types of high resistivity regions: 1) isolation regions (e.g., oxide shallow trench isolation (STI)) and 2) undoped or lightly doped regions (e.g., channel regions). The channel regions can have gates thereover and the gates can be charged. Also, optionally a n−well (n minus well) can be formed under the collector. The high resistivity regions increase the collector resistivity thereby improving the performance of the parasitic bipolar ESD device.
摘要翻译：一种在寄生NPN的集电极内具有高电阻率区域的寄生双极硅化ESD器件的方法和结构。该器件具有N-MOS晶体管和衬底接触的结构。器件优选在掺杂区域上方具有硅化物区域。本发明具有两种类型的高电阻率区域：1）隔离区域（例如，氧化物浅沟槽隔离（STI））和2）未掺杂或轻掺杂区域（例如沟道区）。通道区域可以有栅极，栅极可以充电。此外，可以在收集器下方形成任选的n - 阱（n-negative well）。高电阻率区域增加了集电极电阻率，从而提高了寄生双极型ESD器件的性能。

36. 发明授权

US06444510B1 Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocks 有权
标题翻译：低触发N MOS晶体管用于在没有硅化物块的完全硅化工艺下工作的ESD保护
公开(公告)号：US06444510B1
公开(公告)日：2002-09-03
申请号：US09999246
申请日：2001-12-03
申请人： David Hu , Jun Cai
发明人： David Hu , Jun Cai
IPC分类号： H01L21336
CPC分类号： H01L29/0847 , H01L27/0259 , H01L29/1087 , H01L29/66659 , H01L29/735 , H01L29/7835
摘要： An ESD device and method using parasitic bipolar transistors that are silicided. The first embodiment is a parasitic Bipolar Junction Transistor comprised of n+/n−/p−/n−/n+ regions. The emitter is formed of the second N+ region and the second N− well. The parasitic base is formed by the p− substrate or well. The collector is formed of the first well and the first n+ region. The benefit of the first embodiment is the trigger voltage is lower because the junction between the n− well (emitter) and P− substrate (base) and the junction between P− substrate (base) and the n− well have lower cross over concentrations. The second embodiment is similar to the first embodiment with the addition of the first gate. The first gate is preferably connected to the first n+ region and the Vpad. The third embodiment contains the same elements as the second embodiment with the addition of a third n+ region. The third n+ region is preferably shorted (or connected) to the first p+ region and the second n+ region. The third embodiment forms a second NPN parasitic bipolar using the third N+ region as an emitter. The forth embodiment contains the same elements as the third embodiment with the addition of a second gate over the first isolation region. The second gate is preferably connected to the third n+ region to the first p+ region and the second n+ region. The gate changes the electrical characteristics of the first parasitic bipolar transistor.
摘要翻译：使用硅化的寄生双极晶体管的ESD器件和方法。第一实施例是由n + / n- / p- / n- / n +区组成的寄生双极结晶体管。发射极由第二N +区和第二N-阱构成。寄生基底由p-基底或阱形成。集电极由第一阱和第一n +区形成。第一实施例的好处是触发电压较低，因为n阱（发射极）与P-衬底（基极）之间的结以及P-衬底（基极）与n-阱之间的结有较低的交叉浓度。第二实施例与第一实施例类似，附加第一门。第一栅极优选地连接到第一n +区域和Vpad。第三实施例包含与第二实施例相同的元件，并添加第三n +区。第三n +区域优选地与第一p +区域和第二n +区域短接（或连接）。第三实施例使用第三N +区域作为发射器形成第二NPN寄生双极。第四实施例包含与第三实施例相同的元件，在第一隔离区域上添加第二栅极。第二栅极优选地连接到第三n +区到第一p +区和第二n +区。门改变第一寄生双极晶体管的电特性。

37. 发明授权

US08823051B2 High-voltage diodes formed in advanced power integrated circuit devices 有权
标题翻译：高压二极管形成于先进的功率集成电路器件中
公开(公告)号：US08823051B2
公开(公告)日：2014-09-02
申请号：US11434545
申请日：2006-05-15
申请人： Jun Cai , Micheal Harley-Stead , Jim G. Holt
发明人： Jun Cai , Micheal Harley-Stead , Jim G. Holt
IPC分类号： H01L29/66
CPC分类号： H01L29/861 , H01L29/7391
摘要： A diode-connected lateral transistor on a substrate of a first conductivity type includes a vertical parasitic transistor through which a parasitic substrate leakage current flows. Means for shunting at least a portion of the flow of parasitic substrate leakage current away from the vertical parasitic transistor is provided.
摘要翻译：在第一导电类型的衬底上的二极管连接的横向晶体管包括垂直寄生晶体管，寄生衬底漏电流通过该垂直寄生晶体管流动。提供了用于分流远离垂直寄生晶体管的寄生衬底泄漏电流的至少一部分的装置。

38. 发明授权

US08722263B2 Feedback control of H2 injection during park based on gas concentration model 有权
标题翻译：基于气体浓度模型的公园H2注入反馈控制
公开(公告)号：US08722263B2
公开(公告)日：2014-05-13
申请号：US12754279
申请日：2010-04-05
申请人： Jun Cai , Joseph Nicholas Lovria , Sriram Ganapathy , Jaehak Jung , John P. Salvador
发明人： Jun Cai , Joseph Nicholas Lovria , Sriram Ganapathy , Jaehak Jung , John P. Salvador
IPC分类号： H01M8/04
CPC分类号： H01M8/04992 , H01M8/04097 , H01M8/04104 , H01M8/04201 , H01M8/04223 , H01M8/04225 , H01M8/04228 , H01M8/04303 , H01M8/04447 , H01M8/04753 , H01M8/04798 , H01M2250/20 , Y02T90/32
摘要： A method for determining when to inject hydrogen gas into the anode side of a fuel cell stack associated with a fuel cell vehicle when the vehicle is off. The method includes estimating the concentration of hydrogen gas in the anode side of the fuel cell stack using a gas concentration model and determining if the estimated concentration of hydrogen gas is below a first predetermined threshold. If the estimated hydrogen gas is less than the threshold, then hydrogen gas is injected into the anode side from a hydrogen source. While the hydrogen gas is being injected, the method compares the estimated concentration of the hydrogen gas in the anode side to a desired concentration, and generates an error signal there between. If the error signal is greater than a second predetermined threshold, the algorithm continues to inject the hydrogen into the anode side of the fuel cell stack.
摘要翻译：一种用于在车辆关闭时确定何时将氢气注入与燃料电池车辆相关联的燃料电池堆的阳极侧的方法。该方法包括使用气体浓度模型估计燃料电池堆的阳极侧的氢气浓度，并且确定氢气的估计浓度是否低于第一预定阈值。如果估计氢气低于阈值，则氢气从氢源注入阳极侧。在注入氢气的同时，该方法将阳极侧的氢气的估计浓度与期望浓度进行比较，并在其间产生误差信号。如果误差信号大于第二预定阈值，则算法继续将氢气注入燃料电池堆的阳极侧。

39. 发明授权

US08623567B2 Method to detect gross loss in coolant based on current feedback from the high temperature pump 有权
标题翻译：根据高温泵的电流反馈来检测冷却液总损耗的方法
公开(公告)号：US08623567B2
公开(公告)日：2014-01-07
申请号：US13082046
申请日：2011-04-07
申请人： Jun Cai , Seth E. Lerner , Loren Devries , Steven R. Falta
发明人： Jun Cai , Seth E. Lerner , Loren Devries , Steven R. Falta
IPC分类号： H01M8/04
CPC分类号： H01M8/04417 , H01M8/04425 , H01M8/04485 , H01M8/04686 , H01M8/04768 , H01M8/04776
摘要： A system and method for determining a loss of cooling fluid from a thermal sub-system in a fuel cell system. The method includes monitoring current feedback from a high temperature pump that pumps the cooling fluid through a coolant loop. A measured current from the pump is compared to an expected current for the system operating conditions, and if that current is significantly less than what is expected, then it may be as a result of low cooling fluid. If the measured current is less than the expected current for a predetermined period of time, then the system can take mitigating action as a result of a low cooling fluid. Further, if the pump speed is too low to provide an accurate current measurement, then it can be increased if an overflow tank level sensor indicates a low cooling fluid level.
摘要翻译：一种用于确定来自燃料电池系统中的热子系统的冷却流体损失的系统和方法。该方法包括监测来自高温泵的电流反馈，其将冷却流体泵送通过冷却剂回路。将来自泵的测量电流与系统操作条件的预期电流进行比较，并且如果该电流显着小于预期的电流，则可能是低冷却流体的结果。如果测量的电流在预定时间段内小于预期电流，则系统可以由于低冷却流体而采取减轻作用。此外，如果泵速度太低而不能提供精确的电流测量，则如果溢流罐液位传感器指示低冷却液体水平，则其可以增加。

40. 发明申请

US20130181285A1 Lateral DMOS Device with Dummy Gate 有权
标题翻译：具有虚拟门的侧面DMOS设备
公开(公告)号：US20130181285A1
公开(公告)日：2013-07-18
申请号：US13351295
申请日：2012-01-17
申请人： Chun-Wai Ng , Ruey-Hsin Liu , Jun Cai , Hsueh-Liang Chou , Chi-Chih Chen
发明人： Chun-Wai Ng , Ruey-Hsin Liu , Jun Cai , Hsueh-Liang Chou , Chi-Chih Chen
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L29/0649 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/42368
摘要： An LDMOS transistor with a dummy gate comprises an extended drift region formed over a substrate, a drain region formed in the extended drift region, a channel region formed in the extended drift region, a source region formed in the channel region and a dielectric layer formed over the extended drift region. The LDMOS transistor with a dummy gate further comprises an active gate formed over the channel region and a dummy gate formed over the extended drift region. The dummy gate helps to reduce the gate charge of the LDMOS transistor while maintaining the breakdown voltage of the LDMOS transistor.
摘要翻译：具有伪栅极的LDMOS晶体管包括形成在衬底上的扩展漂移区，形成在扩展漂移区中的漏极区，形成在扩展漂移区中的沟道区，形成在沟道区中的源极区和形成的电介质层在扩展漂移区域上。具有伪栅极的LDMOS晶体管还包括形成在沟道区上的有源栅极和形成在扩展漂移区上的伪栅极。虚拟栅极有助于降低LDMOS晶体管的栅极电荷，同时保持LDMOS晶体管的击穿电压。

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