专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20070252753A1 Multifunction-RF-circuit 有权
标题翻译：多功能RF电路
公开(公告)号：US20070252753A1
公开(公告)日：2007-11-01
申请号：US11415397
申请日：2006-04-28
申请人： Marc Tiebout
发明人： Marc Tiebout
IPC分类号： G01S13/00
CPC分类号： G01S7/352 , H03F1/52 , H03F3/195 , H03F3/4521 , H03F2200/171 , H03F2203/45201 , H03F2203/45236
摘要： A multifunction RF circuit on a single semiconductor chip. The multifunction RF circuit includes a power amplifier circuit, a mixer circuit forming an integral part of the power amplifier circuit and a low-pass filter circuit. The power amplifier circuit may include two amplifier circuits.
摘要翻译：单个半导体芯片上的多功能RF电路。多功能RF电路包括功率放大器电路，形成功率放大器电路的组成部分的混合电路和低通滤波器电路。功率放大器电路可以包括两个放大器电路。

32. 发明申请

US20060103995A1 Integrated circuit arrangement 有权
标题翻译：集成电路布置
公开(公告)号：US20060103995A1
公开(公告)日：2006-05-18
申请号：US11264294
申请日：2005-10-31
申请人： Thomas Benetik , Uwe Hodel , Christoph Kienmayer , Martin Streibl , Marc Tiebout
发明人： Thomas Benetik , Uwe Hodel , Christoph Kienmayer , Martin Streibl , Marc Tiebout
IPC分类号： H02H9/00
CPC分类号： H01L27/0251
摘要： Integrated circuit arrangement having first and second signal input pads, to which a differential input signal is applied, and first and second signal outputs, at which a differential output signal is provided. The first signal output is coupled to the first signal input pad and the second signal output is coupled to the second signal input pad. A first capacitance is between the first and second signal input pads. First and second inductances are connected in series, are between the first and second signal input pads, and are connected in parallel with the first capacitance. A first terminal is at a first supply potential and a second terminal is at a second supply potential. A first electrostatic discharge element is between the first and second terminals. A second electrostatic discharge element is between the first terminal, on the one hand, and the first and second inductances, on the other hand.
摘要翻译：具有施加差分输入信号的第一和第二信号输入焊盘以及提供差分输出信号的第一和第二信号输出的集成电路装置。第一信号输出耦合到第一信号输入焊盘，第二信号输出耦合到第二信号输入焊盘。第一电容位于第一和第二信号输入焊盘之间。第一和第二电感串联连接，位于第一和第二信号输入焊盘之间，并且与第一电容并联连接。第一端子处于第一电源电位，第二端子处于第二电源电位。第一静电放电元件在第一和第二端子之间。另一方面，第二静电放电元件一方面在第一端子与第一和第二电感之间。

33. 发明授权

US08098471B2 Integrated circuit arrangement and circuit array 有权
标题翻译：集成电路布置和电路阵列
公开(公告)号：US08098471B2
公开(公告)日：2012-01-17
申请号：US11574066
申请日：2005-08-09
申请人： Christoph Kienmayer , Martin Streibl , Marc Tiebout
发明人： Christoph Kienmayer , Martin Streibl , Marc Tiebout
IPC分类号： H02H3/22
CPC分类号： H01L27/0251
摘要： One aspect is an integrated circuit arrangement. The arrangement includes a first terminal, which can be brought to a first supply potential, a second terminal, which can be brought to a second supply potential, and a supply potential path formed between the first terminal and the second terminal. There is an electrostatic discharge element at least in the supply potential path. There is a signal input pad, to which an input signal can be applied and a signal output, at an output signal can be provided. A first inductance is arranged between the signal input pad and the signal output, and a second inductance is arranged between the signal output and the first terminal.
摘要翻译：一个方面是集成电路装置。该布置包括可以被带到第一电源电位的第一端子，可以被带到第二电源电位的第二端子和形成在第一端子和第二端子之间的电源路径。至少在电源电位路径中存在静电放电元件。有一个信号输入焊盘，可以在输出信号上提供输入信号并输出信号。在信号输入焊盘和信号输出之间布置第一电感，并且在信号输出和第一端子之间布置第二电感。

34. 发明授权

US07977709B2 MOS transistor and semiconductor device 有权
标题翻译： MOS晶体管和半导体器件
公开(公告)号：US07977709B2
公开(公告)日：2011-07-12
申请号：US11968552
申请日：2008-01-02
申请人： Marc Tiebout , Daniel Kehrer , Domagoj Siprak , Pierre Mayr , Johannes Kunze , Christopher Weyers
发明人： Marc Tiebout , Daniel Kehrer , Domagoj Siprak , Pierre Mayr , Johannes Kunze , Christopher Weyers
IPC分类号： H01L27/18
CPC分类号： H01L23/5283 , H01L23/4824 , H01L23/528 , H01L29/41725 , H01L2924/0002 , H01L2924/30105 , H01L2924/00
摘要： According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source wiring structure is arranged above the source region and is connected to the source region. A drain wiring structure is arranged above the drain region and is connected to the drain region. The width of the source wiring structure is larger than the width of the drain wiring structure, and the height of the source wiring structure is smaller than the height of the drain wiring structure, or vice versa.
摘要翻译：根据本发明的一个实施例，MOS晶体管包括半导体层，其包括源极区，漏极区和设置在源极区和漏极区之间的沟道区。栅极结构布置在沟道区域的上方。源极布线结构布置在源极区域的上方并与源极区域连接。漏极布线结构布置在漏极区上方并连接到漏极区。源极布线结构的宽度大于漏极布线结构的宽度，源极布线结构的高度小于漏极布线结构的高度，反之亦然。

35. 发明授权

US07897956B2 Biasing a transistor out of a supply voltage range 有权
标题翻译：将晶体管偏置在电源电压范围之外
公开(公告)号：US07897956B2
公开(公告)日：2011-03-01
申请号：US12388329
申请日：2009-02-18
申请人： Domagoj Siprak , Marc Tiebout , Peter Baumgartner
发明人： Domagoj Siprak , Marc Tiebout , Peter Baumgartner
IPC分类号： H01L29/02
CPC分类号： H03K19/00315 , H01L21/761 , H01L29/7833 , H03K2217/0018
摘要： The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
摘要翻译：本公开涉及构造和操作具有显着降低的闪烁噪声的晶体管或其它有源器件。

36. 发明申请

US20100066437A1 Application of Control Signal and Forward Body-Bias Signal to an Active Device 失效
标题翻译：控制信号和正向体偏置信号应用于有源器件
公开(公告)号：US20100066437A1
公开(公告)日：2010-03-18
申请号：US12388339
申请日：2009-02-18
申请人： Domagoj Siprak , Marc Tiebout
发明人： Domagoj Siprak , Marc Tiebout
IPC分类号： H03K3/01
CPC分类号： H03K19/00315 , H01L21/761 , H01L29/7833 , H03K2217/0018
摘要： The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
摘要翻译：本公开涉及构造和操作具有显着降低的闪烁噪声的晶体管或其它有源器件。

37. 发明申请

US20100066430A1 Controlling a Flicker Noise Characteristic Based on a Dielectric Thickness 审中-公开
标题翻译：基于介质厚度控制闪烁噪声特性
公开(公告)号：US20100066430A1
公开(公告)日：2010-03-18
申请号：US12388407
申请日：2009-02-18
申请人： Domagoj Siprak , Nicola Zanolla , Marc Tiebout
发明人： Domagoj Siprak , Nicola Zanolla , Marc Tiebout
IPC分类号： H03K17/30
CPC分类号： H03K19/00315 , H01L21/761 , H01L29/7833 , H03K2217/0018
摘要： The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise.
摘要翻译：本公开涉及构造和操作具有显着降低的闪烁噪声的晶体管或其它有源器件。

38. 发明授权

US07606538B2 Mixer circuit and method 有权
标题翻译：混频器电路及方法
公开(公告)号：US07606538B2
公开(公告)日：2009-10-20
申请号：US11487205
申请日：2006-07-14
申请人： Stefano Marsili , Marc Tiebout
发明人： Stefano Marsili , Marc Tiebout
IPC分类号： H04B1/04 , H04B17/00 , H03C1/62
CPC分类号： H04B1/0475 , H04B2001/0491
摘要： A mixer circuit includes a mixer having input terminals and an output terminal, to provide an output signal by mixing input signals, wherein the mixer exhibits leakage. The circuit also includes a signal generator coupled to one of the input terminals of the mixer to provide a correction signal, an up-conversion mixer coupled to the mixer to provide an up-converted signal by mixing a test signal with the output signal of the mixer, and a down-conversion mixer coupled to the up-conversion mixer to provide a down-converted signal by down-converting the up-converted signal. A signal detector is coupled to the down-conversion mixer and detects a spurious signal in the down-converted signal, the spurious signal indicating the leakage, and a control unit is coupled to the signal detector and the signal generator to control generation of the correction signal depending on the detected spurious signal to compensate the leakage.
摘要翻译：混频器电路包括具有输入端和输出端的混频器，通过混合输入信号提供输出信号，其中混频器显示泄漏。电路还包括耦合到混频器的一个输入端以提供校正信号的信号发生器，耦合到混频器的上转换混频器，通过将测试信号与混频器和耦合到上变频混频器的下变频混频器，通过下变频上变频信号来提供下变频信号。信号检测器耦合到下变频混频器并检测下变频信号中的寄生信号，指示泄漏的寄生信号，以及控制单元耦合到信号检测器和信号发生器以控制校正的产生信号取决于检测到的杂散信号以补偿泄漏。

39. 发明申请

US20090011734A1 Power Detector Radio Frequency Multiplexer 有权
标题翻译：功率检测器射频多路复用器
公开(公告)号：US20090011734A1
公开(公告)日：2009-01-08
申请号：US11774432
申请日：2007-07-06
申请人： Koen Mertens , Andreas Wiesbauer , Sven Derksen , Marc Tiebout
发明人： Koen Mertens , Andreas Wiesbauer , Sven Derksen , Marc Tiebout
IPC分类号： H04B7/00
CPC分类号： H03F3/24 , H03F3/68 , H04B2001/0416
摘要： Implementations related to systems and devices that make use of a power detector multiplexer are presented herein.
摘要翻译：本文给出了与使用功率检测器多路复用器的系统和设备相关的实现。

40. 发明申请

US20080030282A1 Injection-Locked Oscillator Circuit 有权
标题翻译：注入锁定振荡器电路
公开(公告)号：US20080030282A1
公开(公告)日：2008-02-07
申请号：US10574151
申请日：2004-09-10
申请人： Judith Maget , Marc Tiebout
发明人： Judith Maget , Marc Tiebout
IPC分类号： H03B5/12 , H03B27/00 , H03K3/03
CPC分类号： H03L7/24 , H03B5/1212 , H03B5/1215 , H03B5/1228 , H03B5/1243 , H03B27/00 , H03K3/354
摘要： An ILO circuit has a plurality of oscillator stages which are coupled to one another by means of a “tank lock” coupling. The coupling leads to an improved synchronization of the individual oscillator stages and thus to a reduced phase noise. Any desired LC oscillator topology can be used, not just the topology with PMOS and NMOS transistors. It is also possible to use SOI transistors, that is to say transistors formed on an SOI substrate. The bulk terminals of the transistors may be coupled not only to a supply voltage but, for example, also to a center potential, a reference voltage source, to ground, in floating fashion and/or to the source terminal.
摘要翻译：国际劳工组织电路具有多个振荡器级，它们通过“卡锁”耦合彼此联接。耦合导致各个振荡器级的改进的同步，从而导致相位噪声的降低。可以使用任何所需的LC振荡器拓扑，而不仅仅是具有PMOS和NMOS晶体管的拓扑。也可以使用SOI晶体管，也就是说形成在SOI衬底上的晶体管。晶体管的体积端子可以不仅耦合到电源电压，而且例如也可以以浮动方式耦合到中心电位，参考电压源和/或源极端子。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式