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    • 31. 发明授权
    • High resolution organic light emitting display with increased aperture ratio
    • 高分辨率有机发光显示屏,增加孔径比
    • US08445910B2
    • 2013-05-21
    • US13074142
    • 2011-03-29
    • Jong-Yun KimIl-Jeong LeeChoong-Youl Im
    • Jong-Yun KimIl-Jeong LeeChoong-Youl Im
    • H01L29/04
    • H01L27/3276H01L27/1255H01L27/3265
    • In an organic light emitting display, a conductive layer is formed on the bottom surface of a substrate, and the conductive layer is used as a wiring line for supplying a power source, and as the electrode of a capacitor. Therefore, it is possible to easily secure the aperture ratio of a pixel, to easily solve the problem of IR drops by controlling the area or thickness of the conductive layer, and to easily secure the electrostatic capacity of the capacitor. In particular, in the case of a front surface light emitting structure, since a capacitor of a metal/insulating layer/metal (MIM) structure may be formed in a light emitting region, enough aperture ratio and electrostatic capacity may be secured. Therefore, a high resolution organic light emitting display may be easily realized, and enough aperture ratio and electrostatic capacity are secured so as to realize high picture quality.
    • 在有机发光显示器中,在基板的底面上形成导电层,并且将导电层用作用于供电的布线和电容器的电极。 因此,可以容易地确保像素的开口率,通过控制导电层的面积或厚度容易地解决IR滴的问题,并且容易地确保电容器的静电容量。 特别地,在前面发光结构的情况下,由于可以在发光区域形成金属/绝缘层/金属(MIM)结构的电容器,因此可以确保足够的开口率和静电容量。 因此,可以容易地实现高分辨率有机发光显示器,并且确保足够的开口率和静电容量,以便实现高画质。
    • 32. 发明申请
    • Organic Light Emitting Display
    • 有机发光显示
    • US20110291091A1
    • 2011-12-01
    • US13074142
    • 2011-03-29
    • Jong-Yun KimIl-Jeong LeeChoong-Youl Im
    • Jong-Yun KimIl-Jeong LeeChoong-Youl Im
    • H01L51/52
    • H01L27/3276H01L27/1255H01L27/3265
    • In an organic light emitting display, a conductive layer is formed on the bottom surface of a substrate, and the conductive layer is used as a wiring line for supplying a power source, and as the electrode of a capacitor. Therefore, it is possible to easily secure the aperture ratio of a pixel, to easily solve the problem of IR drops by controlling the area or thickness of the conductive layer, and to easily secure the electrostatic capacity of the capacitor. In particular, in the case of a front surface light emitting structure, since a capacitor of a metal/insulating layer/metal (MIM) structure may be formed in a light emitting region, enough aperture ratio and electrostatic capacity may be secured. Therefore, a high resolution organic light emitting display may be easily realized, and enough aperture ratio and electrostatic capacity are secured so as to realize high picture quality.
    • 在有机发光显示器中,在基板的底面上形成导电层,并且将导电层用作用于供电的布线和电容器的电极。 因此,可以容易地确保像素的开口率,通过控制导电层的面积或厚度容易地解决IR滴的问题,并且容易地确保电容器的静电容量。 特别地,在前面发光结构的情况下,由于可以在发光区域形成金属/绝缘层/金属(MIM)结构的电容器,因此可以确保足够的开口率和静电容量。 因此,可以容易地实现高分辨率有机发光显示器,并且确保足够的开口率和静电容量,以便实现高画质。
    • 34. 发明授权
    • Organic light emitting display devices and methods of manufacturing organic light emitting display devices
    • 有机发光显示装置及制造有机发光显示装置的方法
    • US08946687B2
    • 2015-02-03
    • US13473412
    • 2012-05-16
    • Young-Dae KimJang-Soon ImIl-Jeong LeeSang-Bong Lee
    • Young-Dae KimJang-Soon ImIl-Jeong LeeSang-Bong Lee
    • H01L29/08H01L27/32
    • H01L27/3248
    • An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole.
    • 提供了一种有机发光显示装置。 薄膜晶体管可以位于基板上。 具有到第三接触孔的第一接触孔的绝缘中间层可以设置在基板上。 电连接薄膜晶体管的第一电极可以位于第一至第三接触孔的绝缘层和侧壁上。 像素限定层可以设置在绝缘中间层,第一电极的部分和第一至第三接触孔的侧壁上。 发光结构可以设置在像素区域中的第一电极上。 第二电极可以位于发光结构上。 平面化图案可以设置在像素限定层上以填充第一和第二接触孔。 间隔物可以设置在像素限定层上以填充第三接触孔。
    • 36. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 有机发光二极管显示装置及其制造方法
    • US20110127499A1
    • 2011-06-02
    • US12873519
    • 2010-09-01
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • H01L51/52H01L33/00H01L51/56
    • H01L51/5284H01L27/3272
    • An organic light emitting diode (OLED) display device and a method of fabricating the OLED display device, the OLED display device includes a substrate including an emission region and a non-emission region, a black matrix disposed in a region excluding a part of the emission region, a buffer layer disposed on the entire surface of the substrate, a semiconductor layer disposed on the buffer layer in the non-emission region, a gate electrode disposed on the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode and formed on the entire surface of the substrate, a first electrode formed on the gate insulating layer in the emission region, source and drain electrodes electrically connected with the semiconductor layer and the first electrode, an interlayer insulating layer insulating the source and drain electrodes from the gate electrode and opening a part of the first electrode, a pixel defining layer opening a part of the first electrode and disposed on the entire surface of the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the entire surface of the substrate. Here, the first electrode includes a transparent conductive oxide layer.
    • 一种有机发光二极管(OLED)显示装置和OLED显示装置的制造方法,所述OLED显示装置包括:基板,其包括发光区域和非发光区域;黑矩阵, 发光区域,设置在基板的整个表面上的缓冲层,设置在非发光区域的缓冲层上的半导体层,设置在半导体层上的栅极电极,将半导体层与栅极绝缘的栅极绝缘层 电极,形成在基板的整个表面上,形成在发光区域的栅极绝缘层上的第一电极,与半导体层和第一电极电连接的源极和漏极,将源极和漏极绝缘的层间绝缘层 从所述栅极电极并打开所述第一电极的一部分,形成开口所述第一电极的一部分的像素限定层 并且设置在基板的整个表面上,设置在第一电极上的有机层和设置在基板的整个表面上的第二电极。 这里,第一电极包括透明导电氧化物层。
    • 38. 发明授权
    • Organic light emitting diode display device and method of fabricating the same
    • 有机发光二极管显示装置及其制造方法
    • US08519612B2
    • 2013-08-27
    • US12873519
    • 2010-09-01
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • H01J1/62H01J63/04H01J9/00B32B9/00
    • H01L51/5284H01L27/3272
    • An organic light emitting diode (OLED) display device and a method of fabricating the OLED display device, the OLED display device includes a substrate including an emission region and a non-emission region, a black matrix disposed in a region excluding a part of the emission region, a buffer layer disposed on the entire surface of the substrate, a semiconductor layer disposed on the buffer layer in the non-emission region, a gate electrode disposed on the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode and formed on the entire surface of the substrate, a first electrode formed on the gate insulating layer in the emission region, source and drain electrodes electrically connected with the semiconductor layer and the first electrode, an interlayer insulating layer insulating the source and drain electrodes from the gate electrode and opening a part of the first electrode, a pixel defining layer opening a part of the first electrode and disposed on the entire surface of the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the entire surface of the substrate. Here, the first electrode includes a transparent conductive oxide layer.
    • 一种有机发光二极管(OLED)显示装置和OLED显示装置的制造方法,所述OLED显示装置包括:基板,其包括发光区域和非发光区域;黑矩阵, 发光区域,设置在基板的整个表面上的缓冲层,设置在非发光区域的缓冲层上的半导体层,设置在半导体层上的栅极电极,将半导体层与栅极绝缘的栅极绝缘层 电极,形成在基板的整个表面上,形成在发光区域的栅极绝缘层上的第一电极,与半导体层和第一电极电连接的源极和漏极,将源极和漏极绝缘的层间绝缘层 从所述栅极电极并打开所述第一电极的一部分,形成开口所述第一电极的一部分的像素限定层 并且设置在基板的整个表面上,设置在第一电极上的有机层和设置在基板的整个表面上的第二电极。 这里,第一电极包括透明导电氧化物层。