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    • 31. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD OF THE SAME
    • 有机发光二极管显示及其制作方法
    • US20110186847A1
    • 2011-08-04
    • US13020687
    • 2011-02-03
    • Jong-Yun KimIl-Jeong LeeDo-Hyun KwonJong-Mo Yeo
    • Jong-Yun KimIl-Jeong LeeDo-Hyun KwonJong-Mo Yeo
    • H01L51/52H01L51/56
    • H01L51/52H01L27/1255H01L29/4908H01L51/56
    • An organic light emitting diode display and a fabricating method of the same are disclosed. In one embodiment, the display includes i) a substrate having a thin film transistor region and a pixel region, ii) a semiconductor layer formed in the thin film transistor region, iii) a gate insulating layer formed on the substrate and the semiconductor layer and vi) a lower electrode formed on the gate insulating layer, wherein the lower electrode is formed in the pixel region. The display further includes i) a gate electrode formed on the gate insulating layer, wherein the gate electrode is formed substantially directly above the semiconductor layer, ii) an interlayer insulating layer formed on the gate insulating layer, the lower electrode and the gate electrode and iii) source and drain electrodes formed on the interlayer insulating layer and electrically connected with the semiconductor layer. Each of the lower electrode and the gate electrode is formed of a first conductive layer and a second conductive layer formed on the first conductive layer. The second conductive layer and the source/drain electrodes are formed of the same material.
    • 公开了一种有机发光二极管显示器及其制造方法。 在一个实施例中,显示器包括i)具有薄膜晶体管区域和像素区域的衬底,ii)形成在薄膜晶体管区域中的半导体层,iii)形成在衬底和半导体层上的栅极绝缘层,以及 vi)形成在栅绝缘层上的下电极,其中下电极形成在像素区域中。 所述显示器还包括i)形成在所述栅极绝缘层上的栅电极,其中所述栅电极基本上直接形成在所述半导体层上方,ii)形成在所述栅绝缘层,所述下电极和所述栅电极上的层间绝缘层,以及 iii)形成在层间绝缘层上并与半导体层电连接的源极和漏极。 下电极和栅电极各自由形成在第一导电层上的第一导电层和第二导电层形成。 第二导电层和源极/漏极由相同的材料形成。
    • 32. 发明授权
    • Organic light emitting display devices and methods of manufacturing organic light emitting display devices
    • 有机发光显示装置及制造有机发光显示装置的方法
    • US08946687B2
    • 2015-02-03
    • US13473412
    • 2012-05-16
    • Young-Dae KimJang-Soon ImIl-Jeong LeeSang-Bong Lee
    • Young-Dae KimJang-Soon ImIl-Jeong LeeSang-Bong Lee
    • H01L29/08H01L27/32
    • H01L27/3248
    • An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole.
    • 提供了一种有机发光显示装置。 薄膜晶体管可以位于基板上。 具有到第三接触孔的第一接触孔的绝缘中间层可以设置在基板上。 电连接薄膜晶体管的第一电极可以位于第一至第三接触孔的绝缘层和侧壁上。 像素限定层可以设置在绝缘中间层,第一电极的部分和第一至第三接触孔的侧壁上。 发光结构可以设置在像素区域中的第一电极上。 第二电极可以位于发光结构上。 平面化图案可以设置在像素限定层上以填充第一和第二接触孔。 间隔物可以设置在像素限定层上以填充第三接触孔。
    • 33. 发明授权
    • Organic light-emitting display apparatus and method of manufacturing the same
    • 有机发光显示装置及其制造方法
    • US08785940B2
    • 2014-07-22
    • US13238928
    • 2011-09-21
    • Jong-Yun KimIl-Jeong LeeYoung-Dae Kim
    • Jong-Yun KimIl-Jeong LeeYoung-Dae Kim
    • H01L27/12
    • H01L27/3258H01L27/3223H01L27/3246
    • An organic light-emitting display apparatus may include: a planarization layer disposed on a substrate and covering a plurality of thin film transistors; pixel electrodes, each comprising a light emission portion and anon-light emission portion, the light emission portion being arranged on the planarization layer in a first grid pattern; via-holes, each connecting one thin film transistor and one pixel electrode through the planarization layer, and arranged in a second grid pattern offset from the first grid pattern; dummy via-holes spaced apart from the via-holes; a pixel-defining layer (PDL) disposed on the planarization layer and covering the via-holes, the dummy via-holes, and the non-light emission portion of the pixel electrodes; an organic layer disposed on the light emission portion and comprising an emissive layer; and an opposite electrode disposed on the organic layer.
    • 有机发光显示装置可以包括:设置在基板上并覆盖多个薄膜晶体管的平坦化层; 每个像素电极包括发光部分和阴极发射部分,所述发光部分以第一格子图案布置在所述平坦化层上; 通孔,每个通过所述平坦化层连接一个薄膜晶体管和一个像素电极,并且以与所述第一格栅图案偏移的第二格栅图案布置; 与通孔间隔开的虚拟通孔; 设置在平坦化层上并覆盖像素电极的通孔,虚拟通孔和非发光部分的像素限定层(PDL); 设置在所述发光部分上并包括发光层的有机层; 以及设置在有机层上的相对电极。
    • 35. 发明申请
    • ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 有机发光二极管显示装置及其制造方法
    • US20110127499A1
    • 2011-06-02
    • US12873519
    • 2010-09-01
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • H01L51/52H01L33/00H01L51/56
    • H01L51/5284H01L27/3272
    • An organic light emitting diode (OLED) display device and a method of fabricating the OLED display device, the OLED display device includes a substrate including an emission region and a non-emission region, a black matrix disposed in a region excluding a part of the emission region, a buffer layer disposed on the entire surface of the substrate, a semiconductor layer disposed on the buffer layer in the non-emission region, a gate electrode disposed on the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode and formed on the entire surface of the substrate, a first electrode formed on the gate insulating layer in the emission region, source and drain electrodes electrically connected with the semiconductor layer and the first electrode, an interlayer insulating layer insulating the source and drain electrodes from the gate electrode and opening a part of the first electrode, a pixel defining layer opening a part of the first electrode and disposed on the entire surface of the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the entire surface of the substrate. Here, the first electrode includes a transparent conductive oxide layer.
    • 一种有机发光二极管(OLED)显示装置和OLED显示装置的制造方法,所述OLED显示装置包括:基板,其包括发光区域和非发光区域;黑矩阵, 发光区域,设置在基板的整个表面上的缓冲层,设置在非发光区域的缓冲层上的半导体层,设置在半导体层上的栅极电极,将半导体层与栅极绝缘的栅极绝缘层 电极,形成在基板的整个表面上,形成在发光区域的栅极绝缘层上的第一电极,与半导体层和第一电极电连接的源极和漏极,将源极和漏极绝缘的层间绝缘层 从所述栅极电极并打开所述第一电极的一部分,形成开口所述第一电极的一部分的像素限定层 并且设置在基板的整个表面上,设置在第一电极上的有机层和设置在基板的整个表面上的第二电极。 这里,第一电极包括透明导电氧化物层。
    • 38. 发明授权
    • Organic light emitting diode display device and method of fabricating the same
    • 有机发光二极管显示装置及其制造方法
    • US08519612B2
    • 2013-08-27
    • US12873519
    • 2010-09-01
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • Ju-Won YoonSu-Mi LeeSung-Ho KimIl-Jeong LeeJi-Yong NohHee-Seong Jeong
    • H01J1/62H01J63/04H01J9/00B32B9/00
    • H01L51/5284H01L27/3272
    • An organic light emitting diode (OLED) display device and a method of fabricating the OLED display device, the OLED display device includes a substrate including an emission region and a non-emission region, a black matrix disposed in a region excluding a part of the emission region, a buffer layer disposed on the entire surface of the substrate, a semiconductor layer disposed on the buffer layer in the non-emission region, a gate electrode disposed on the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode and formed on the entire surface of the substrate, a first electrode formed on the gate insulating layer in the emission region, source and drain electrodes electrically connected with the semiconductor layer and the first electrode, an interlayer insulating layer insulating the source and drain electrodes from the gate electrode and opening a part of the first electrode, a pixel defining layer opening a part of the first electrode and disposed on the entire surface of the substrate, an organic layer disposed on the first electrode, and a second electrode disposed on the entire surface of the substrate. Here, the first electrode includes a transparent conductive oxide layer.
    • 一种有机发光二极管(OLED)显示装置和OLED显示装置的制造方法,所述OLED显示装置包括:基板,其包括发光区域和非发光区域;黑矩阵, 发光区域,设置在基板的整个表面上的缓冲层,设置在非发光区域的缓冲层上的半导体层,设置在半导体层上的栅极电极,将半导体层与栅极绝缘的栅极绝缘层 电极,形成在基板的整个表面上,形成在发光区域的栅极绝缘层上的第一电极,与半导体层和第一电极电连接的源极和漏极,将源极和漏极绝缘的层间绝缘层 从所述栅极电极并打开所述第一电极的一部分,形成开口所述第一电极的一部分的像素限定层 并且设置在基板的整个表面上,设置在第一电极上的有机层和设置在基板的整个表面上的第二电极。 这里,第一电极包括透明导电氧化物层。
    • 39. 发明申请
    • ORGANIC LIGHT EMITTING DISPLAY DEVICES AND METHODS OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICES
    • 有机发光显示装置及制造有机发光显示装置的方法
    • US20130001533A1
    • 2013-01-03
    • US13473412
    • 2012-05-16
    • Young-Dae KimJang-Soon ImIl-Jeong LeeSang-Bong Lee
    • Young-Dae KimJang-Soon ImIl-Jeong LeeSang-Bong Lee
    • H01L27/32H01L51/56
    • H01L27/3248
    • An organic light emitting display device is provided. Thin film transistors may be located on a substrate. An insulating interlayer having a first contact hole to a third contact hole may be disposed on the substrate. First electrodes electrically connecting the thin film transistors may be located on the insulating interlayer and sidewalls of the first to the third contact holes. A pixel defining layer may be disposed on the insulating interlayer, portions of the first electrodes and the sidewalls of the first to the third contact holes. Light emitting structures may be disposed on the first electrodes in pixel regions. A second electrode may be located on the light emitting structures. Planarization patterns may be disposed on the pixel defining layer to fill the first and the second contact holes. A spacer may be disposed on the pixel defining layer to fill the third contact hole.
    • 提供了一种有机发光显示装置。 薄膜晶体管可以位于基板上。 具有到第三接触孔的第一接触孔的绝缘中间层可以设置在基板上。 电连接薄膜晶体管的第一电极可以位于第一至第三接触孔的绝缘层和侧壁上。 像素限定层可以设置在绝缘中间层,第一电极的部分和第一至第三接触孔的侧壁上。 发光结构可以设置在像素区域中的第一电极上。 第二电极可以位于发光结构上。 平面化图案可以设置在像素限定层上以填充第一和第二接触孔。 间隔物可以设置在像素限定层上以填充第三接触孔。