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    • 31. 发明授权
    • Transient voltage surge suppression device
    • 瞬态电压浪涌抑制装置
    • US07505241B2
    • 2009-03-17
    • US11691995
    • 2007-03-27
    • Neil McLoughlinMichael O'DonovanThomas NovakNathan SiegwaldBrian WalaszczykJohn KennedyJohn Foster
    • Neil McLoughlinMichael O'DonovanThomas NovakNathan SiegwaldBrian WalaszczykJohn KennedyJohn Foster
    • H02H1/00
    • H01H85/0241H01C7/126H01H2085/0486
    • An integrated fuse device (1) includes a varistor stack (11), a thermal fuse (12), and a current fuse (13) within an enclosure (2) having device terminals (3). The varistor stack (11) is connected to the thermal fuse (12) by a Cu terminal (20) and is connected to the device terminal (3) by steel terminal (10) of smaller cross-sectional area. Being of Cu material and having a greater cross-sectional area, the terminal (20) connected to the thermal fuse (12) has greater thermal conductivity than the steel terminal (10) to the end cap (3). The thermal fuse (12) comprises a plurality of links having a melting point to melt with sustained overvoltage, the links having a diameter in the range of about 2 mm to about 3 mm. The links pass through an elastomer plug (15), which exerts physical pressure on them to assist with opening during sustained overvoltage. Hot melt (18) around solder (17) of the thermal fuse limits heat conduction to back-fill sand.
    • 集成保险丝装置(1)包括具有装置端子(3)的外壳(2)内的压敏电阻堆(11),热熔丝(12)和电流保险丝(13)。 压敏电阻堆(11)通过Cu端子(20)连接到热熔丝(12),并通过较小横截面积的钢端子(10)连接到设备端子(3)。 作为Cu材料并且具有更大的横截面积,与热熔丝(12)连接的端子(20)具有比钢端子(10)至端盖(3)更大的热导率。 热熔丝(12)包括多个具有熔点以维持过电压的熔点,所述连接件具有在约2mm至约3mm范围内的直径。 连杆通过弹性体塞(15),其在其上施加物理压力以辅助在持续过电压期间打开。 热熔丝周围的焊料(17)周围的热熔体(18)将热传导限制为回填砂。
    • 37. 发明申请
    • VARIABLE FLOW RESTRICTING DEVICES
    • 可变流量限制装置
    • US20060006288A1
    • 2006-01-12
    • US10875844
    • 2004-06-23
    • Thaddeus JakubowskiJohn FosterCory Keller
    • Thaddeus JakubowskiJohn FosterCory Keller
    • B64D1/12
    • B64D1/04
    • A pneumatically operated stores ejector rack for an aircraft having an adjustable flow restricting device for variably apportioning the flow of pressurized gas from a manifold to the store ejection thrusters. The flow restricting device includes at least one adjustable valve assembly, having a valve and a valve body, for varying the pressure of gas supplied to the thruster. It also includes a feed conduit connecting the manifold and the valve, and a collar threadably engageable with the manifold and the feed conduit for urging the valve into contact valve body. Also disclosed is a method for apportioning the flow of pressurized gas between a pair of thrusters in a stores ejection rack which includes the flow restricting device.
    • 气动操作存储用于具有可调节流动限制装置的飞机的喷射器架,用于可变地分配来自歧管的加压气体流到商店喷射推进器。 流量限制装置包括至少一个可调节阀组件,其具有用于改变供应给推进器的气体的压力的阀和阀体。 其还包括连接歧管和阀的进料管和可与歧管螺纹接合的套环和用于将阀推动到接触阀体中的进料管。 还公开了一种用于在包括流量限制装置的储存排出架中的一对推进器之间分配加压气体流的方法。
    • 38. 发明授权
    • Double layer hard mask process to improve oxide quality for non-volatile flash memory products
    • 双层硬掩模工艺,提高非挥发性闪存产品的氧化物质量
    • US06306707B1
    • 2001-10-23
    • US09716659
    • 2000-11-20
    • John FosterYue-Song HeJiahua Huang
    • John FosterYue-Song HeJiahua Huang
    • H01L21336
    • H01L27/11526H01L27/115H01L27/11521H01L27/11534
    • In the manufacture of an EPROM or EEPROM semiconductor device that includes a core region and a peripheral region, a nitride layer is formed over the core region and peripheral region, and an oxide layer is formed over the nitride layer. A layer of photoresist is provided over the oxide layer and is patterned to expose a portion of the oxide layer overlying the core region. A wet etch step is undertaken to remove the exposed portion of the oxide layer, using the patterned photoresist as a mask, and leaving exposed a portion of the nitride layer overlying the core region. After removal of the photoresist, the exposed portion of the nitride layer is etched by a wet etch step with hot phosphoric acid, using the pattered oxide layer as a mask.
    • 在制造包括芯区域和周边区域的EPROM或EEPROM半导体器件中,在芯区域和外围区域上形成氮化物层,并且在氮化物层上形成氧化物层。 在氧化物层上提供一层光致抗蚀剂,并将其图案化以暴露覆盖芯区域的氧化物层的一部分。 进行湿蚀刻步骤以使用图案化的光致抗蚀剂作为掩模去除氧化物层的暴露部分,并且将覆盖在核心区域上的氮化物层的一部分暴露出来。 在去除光致抗蚀剂之后,使用图案化的氧化物层作为掩模,通过用热磷酸的湿蚀刻步骤蚀刻氮化物层的暴露部分。