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31. 发明申请

US20070052642A1 Circuit and method for driving flat display device 有权
标题翻译：驱动平板显示装置的电路及方法
公开(公告)号：US20070052642A1
公开(公告)日：2007-03-08
申请号：US11476795
申请日：2006-06-29
申请人： Chul Jang , Jin Choi
发明人： Chul Jang , Jin Choi
IPC分类号： G09G3/36
CPC分类号： G09G3/3688 , G09G2310/027 , G09G2320/0276 , G09G2330/021
摘要： A circuit for driving a liquid crystal display device, as embodied, includes: a gray level voltage generator for generating a plurality of gray level voltages; and an intermediate gray level voltage generator for receiving a first gray level voltage and a second gray level voltage among the plurality of gray level voltages and for selectively outputting one of the first gray level voltage and a third gray level voltage through a plurality of capacitors, a value of the third gray level voltage being between the first and second gray level voltage and set by the plurality of capacitors, the intermediate gray level voltage generator including: an operational amplifier for pre-charging the plurality of capacitors using a current outputted from the operational amplifier and for selectively outputting one of the first gray level voltage and the third gray level voltage.
摘要翻译：具体实施方式的驱动液晶显示装置的电路包括：灰度级电压发生器，用于产生多个灰度级电压; 以及中间灰度级电压发生器，用于接收所述多个灰度级电压中的第一灰度电压和第二灰度级电压，并且通过多个电容器选择性地输出所述第一灰度级电压和第三灰度级电压之一，所述第三灰度级电压的值在所述第一和第二灰度级电压之间并由所述多个电容器设定，所述中间灰度级电压发生器包括：运算放大器，用于使用从所述多个电容器输出的电流对所述多个电容器进行预充电运算放大器，并且用于选择性地输出第一灰度级电压和第三灰度级电压之一。

32. 发明申请

US20060196420A1 High density plasma chemical vapor deposition apparatus 审中-公开
标题翻译：高密度等离子体化学气相沉积装置
公开(公告)号：US20060196420A1
公开(公告)日：2006-09-07
申请号：US11246252
申请日：2005-10-11
申请人： Andrey Ushakov , Jin Choi , Jong Park
发明人： Andrey Ushakov , Jin Choi , Jong Park
IPC分类号： C23C14/00 , C23C16/00
CPC分类号： C23C16/509 , C23C16/45563 , C23C16/45565 , H01J37/3244
摘要： A high density plasma chemical vapor deposition apparatus includes an upper gas supply nozzle which includes a nozzle body, a gas supply passage formed vertically in the nozzle body, a nozzle cover attached to a lower surface of the horizontal portion of the nozzle body, and a plurality of gas inlets formed through the nozzle cover to uniformly supply the processing gas towards a semiconductor wafer within the processing chamber.
摘要翻译：高密度等离子体化学气相沉积装置包括：上部气体供给喷嘴，其包括喷嘴体，在喷嘴体中垂直形成的气体供给通道，附接到喷嘴体的水平部分的下表面的喷嘴盖;以及多个气体入口通过喷嘴盖形成，以将处理气体均匀地供给处理室内的半导体晶片。

33. 发明申请

US20060112876A1 Semiconductor processing apparatus 审中-公开
标题翻译：半导体处理装置
公开(公告)号：US20060112876A1
公开(公告)日：2006-06-01
申请号：US11154578
申请日：2005-06-17
申请人： Jin Choi , Suk Lee
发明人： Jin Choi , Suk Lee
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00
CPC分类号： C23C16/5096 , C23C16/45563 , C23C16/4558 , H01J37/3244
摘要： A semiconductor processing apparatus, designed to inject reactant gas with uniform pressure and flux therein, includes a chamber in which a process is performed, a gas supply to supply reactant gas to the chamber, a gas dispenser having a plurality of nozzles to inject the reactant gas into the chamber, and a gas distribution route formed in the gas dispenser to uniformly distribute the reactant gas supplied from the gas supply to the nozzles.
摘要翻译：一种半导体处理装置，其设计成用于在其中注入均匀的压力和通量的反应气体，包括其中进行处理的室，用于向室供应反应气体的气体供应器，具有多个喷嘴以注入反应物的气体分配器气体进入室内，以及形成在气体分配器中的气体分配通道，以将从气体供应供应的反应气体均匀地分配到喷嘴。

34. 发明申请

US20050106970A1 Melt processable perfluoropolymer forms 审中-公开
标题翻译：可熔融加工的全氟聚合物形式
公开(公告)号：US20050106970A1
公开(公告)日：2005-05-19
申请号：US10362788
申请日：2001-03-02
申请人： Gary Stanitis , Frank Cistone , Jin Choi
发明人： Gary Stanitis , Frank Cistone , Jin Choi
IPC分类号： D01F6/12 , D02G3/04 , D03D25/00
CPC分类号： D01F6/12 , D02G3/047 , Y10T442/30
摘要： Melt processable perfluoropolymer forms prepared from melt processable perfluoropolymer fibers and yarns. Filtration media and filtration support media prepared from melt processable perfluoropolymers.
摘要翻译：由可熔融加工的全氟聚合物纤维和纱线制备的可熔融加工的全氟聚合物形式。由可熔融加工的全氟聚合物制备的过滤介质和过滤支撑介质。

35. 发明申请

US20050012358A1 Wake distributing apparatus and method for reducing drag 有权
标题翻译：唤醒分配装置和减少阻力的方法
公开(公告)号：US20050012358A1
公开(公告)日：2005-01-20
申请号：US10883804
申请日：2004-07-06
申请人： Haecheon Choi , Jin Choi , Dongkon Lee , Jeonglae Kim , Woo-Pyung Jeon , Seonghyeon Hahn , Jinsung Kim
发明人： Haecheon Choi , Jin Choi , Dongkon Lee , Jeonglae Kim , Woo-Pyung Jeon , Seonghyeon Hahn , Jinsung Kim
IPC分类号： F15D1/10 , B60J1/20 , B60R99/00 , B62D35/00 , B60J1/00
CPC分类号： B62D35/007 , B60J1/20 , B62D35/001 , Y10S180/903
摘要： Provided is a wake disturbing apparatus and method for reducing drag, which can considerably reduce drag caused by a sharp decrease in the pressure behind an object with a blunt trailing edge, such as a vehicle, while the object is traveling at high speed. The wake disturbing apparatus includes a plurality of disrupters, which are arranged at regular intervals along the trailing edge of the object to protrude to a predetermined height so that the vortical strength of the wake occurring around the rear part of the object can be reduced and the pressure at the base surface, which has been decreased due to the wake, can be recovered. Accordingly, it is possible to considerably reduce drag on a vehicle by simply attaching a wake disturbing apparatus to the vehicle without modifying the structure of the vehicle or using additional energy. Thus, it is possible to reduce power consumption of the vehicle and thus maximize the energy consumption efficiency.
摘要翻译：提供了一种用于减少阻力的尾流扰动装置和方法，其可以在物体高速行进的同时，显着减少由具有钝的后缘（例如车辆）的物体后面的压力的急剧下降引起的阻力。尾流扰动装置包括多个扰乱器，它们沿着物体的后缘以规则的间隔布置以突出到预定的高度，使得可以减少发生在物体的后部周围的尾迹的涡流强度，并且可以回收由于尾流而降低的基面的压力。因此，通过简单地将尾流扰动装置附接到车辆而不改变车辆的结构或使用额外的能量，可以显着地减少车辆上的阻力。因此，可以降低车辆的功率消耗，从而使能量消耗效率最大化。

36. 发明申请

US20050002815A1 Variable capacity rotary compressor 失效
标题翻译：可变容量旋转压缩机
公开(公告)号：US20050002815A1
公开(公告)日：2005-01-06
申请号：US10815661
申请日：2004-04-02
申请人： Jin Choi , Jun Lee , Dong Shin , Seung Lee , Cheol Kim , Valery Krasnoslobodtsev
发明人： Jin Choi , Jun Lee , Dong Shin , Seung Lee , Cheol Kim , Valery Krasnoslobodtsev
IPC分类号： F04C23/00 , F04C18/00 , F04C18/356 , F04C28/04 , F04C28/22 , F04C29/00 , F03C2/00
CPC分类号： F04C28/22 , F04C28/04 , F04C29/0057
摘要： A variable capacity rotary compressor including first and second compression chambers having different capacities, and a rotating shaft. First and second eccentric cams are mounted to the rotating shaft to be eccentric in a same direction. First and second eccentric bushes are fitted over the first and second eccentric cams to make an angle between eccentric lines of the first and second eccentric bushes be less than 180°. A locking pin functions to change a position of the first or second eccentric bush to a maximum eccentric position. Further, a slot is formed on the rotating shaft between the first and second eccentric bushes. In this case, the slot having a predetermined length is formed to have a same angle as the angle between the eccentric lines of the first and second eccentric bushes. The locking pin is inserted into the slot.
摘要翻译：一种包括具有不同容量的第一和第二压缩室的可变容量旋转压缩机和旋转轴。第一偏心凸轮和第二偏心凸轮安装在旋转轴上以沿同一方向偏心。第一和第二偏心衬套安装在第一和第二偏心凸轮上，使得第一和第二偏心衬套的偏心线之间的角度小于180°。锁定销用于将第一或第二偏心衬套的位置改变到最大偏心位置。此外，在第一和第二偏心衬套之间的旋转轴上形成槽。在这种情况下，具有预定长度的槽形成为与第一和第二偏心衬套的偏心线之间的角度相同的角度。锁定销插入插槽。

37. 发明授权

US08475980B2 Methods of forming semiconductor devices using photolithographic shot grouping 有权
标题翻译：使用光刻射击分组形成半导体器件的方法
公开(公告)号：US08475980B2
公开(公告)日：2013-07-02
申请号：US13219579
申请日：2011-08-26
申请人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
发明人： Jin Choi , Byung-gook Kim , Hee-bom Kim , Sang-hee Lee
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F1/38 , G03F1/70 , G03F1/76
摘要： A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set.
摘要翻译：形成半导体器件的方法可以包括基于用于形成掩模的最终图案来确定包括多个镜头的镜头组。包括在多个镜头中的拍摄可以被分类为处于第一传球镜头或第二镜头组中的每一个，其中每个镜头可以包括多个非直接相邻镜头。可以执行第一遍曝光以辐射掩模版以提供第一遍照射设置，并且可以执行第二曝光曝光以辐射掩模版以提供第二遍照射设置。

38. 发明授权

US08329381B2 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：US08329381B2
公开(公告)日：2012-12-11
申请号：US13399090
申请日：2012-02-17
申请人： Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
发明人： Jin Choi , Byung-Gook Kim , Hee-Bom Kim , Sang-Hee Lee
IPC分类号： G03C5/00
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture.
摘要翻译：图案形成方法包括：提供具有第一孔的第一掩模，通过照射通过第一孔的第一电子束，在抗蚀剂上形成第一转印图案，第一转印图案沿着第一方向延伸并沿着其圆周具有边界并且所述第一电子束在从所述第一孔出射时具有第一正方形的横截面，并且通过照射通过所述第一孔的第二电子束在所述抗蚀剂上形成第二转移图案，所述第二转移图案沿所述第一方向延伸并且当从第一孔径出现时，与第一转印图案的边界的一部分重叠，并且第二电子束具有第二正方形的横截面。

39. 发明授权

US08133640B2 Apparatus and method for mounting pellicle 失效
标题翻译：用于安装防护薄膜的装置和方法
公开(公告)号：US08133640B2
公开(公告)日：2012-03-13
申请号：US12230473
申请日：2008-08-29
申请人： Sang-hee Lee , Jin Choi
发明人： Sang-hee Lee , Jin Choi
IPC分类号： G03F1/00 , G03B27/62
CPC分类号： G03F1/64 , Y10T156/1744
摘要： An apparatus and a method for mounting a pellicle includes a pellicle compression plate formed to apply a plurality of particular pressures to a plurality of points or areas of a region of the reticle where a pellicle frame of the pellicle contacts a reticle.
摘要翻译：一种用于安装防护薄膜组件的装置和方法包括形成为对掩模版区域的多个点或区域施加多个特定压力的防护薄片组件压缩板，其中防护薄膜组件的防护薄膜框架接触掩模版。

40. 发明申请

US20120047474A1 Method for Manufacturing Semiconductor Devices 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120047474A1
公开(公告)日：2012-02-23
申请号：US13192124
申请日：2011-07-27
申请人： Jin Choi , Sang-hee Lee , Seong-june Min
发明人： Jin Choi , Sang-hee Lee , Seong-june Min
IPC分类号： G06F17/50
CPC分类号： G03F1/78 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31771 , H01J2237/31776
摘要： A method of manufacturing semiconductor devices is disclosed. The method includes determining fractured shots that do not overlap each other based on a final pattern; determining overlapping shots that are shots that overlap each other based on the final pattern; generating area difference data by comparing the areas of the overlapping shots and the fractured shots with each other; calculating a radiation influenced pattern based on the area difference data; and correcting the overlapping shots based on the radiation influenced pattern.
摘要翻译：公开了制造半导体器件的方法。该方法包括基于最终模式确定彼此不重叠的断裂射击; 确定基于最终模式重叠的重叠拍摄; 通过比较重叠射击和断裂射击的面积来产生区域差异数据; 基于面积差异数据计算辐射影响模式; 并基于辐射影响模式校正重叠拍摄。

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