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31. 发明授权

US07875923B2 Band engineered high-K tunnel oxides for non-volatile memory 有权
标题翻译：用于非易失性存储器的带式工程高K隧道氧化物
公开(公告)号：US07875923B2
公开(公告)日：2011-01-25
申请号：US12120715
申请日：2008-05-15
申请人： Wei Tian , Insik Jin , Dimitar V. Dimitrov , Song S. Xue
发明人： Wei Tian , Insik Jin , Dimitar V. Dimitrov , Song S. Xue
IPC分类号： H01L29/788
CPC分类号： H01L29/792
摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.
摘要翻译：具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。

32. 发明申请

US20100182837A1 MAGNETIC FLOATING GATE MEMORY 有权
标题翻译：磁性浮动门存储器
公开(公告)号：US20100182837A1
公开(公告)日：2010-07-22
申请号：US12355908
申请日：2009-01-19
申请人： Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
发明人： Insik Jin , Yang Li , Hongyue Liu , Song S. Xue
IPC分类号： G11C16/06 , H01L29/82 , G11C11/14 , G11C11/416 , H01L29/788
CPC分类号： H01L29/7881 , G11C11/14 , G11C16/0408 , H01L21/28273 , H01L29/66825 , H01L29/82
摘要： An apparatus includes at least one memory device including a floating gate element and a magnetic field generator that operably applies a magnetic field to the memory device. The magnetic field directs electrons in the memory device into the floating gate element.
摘要翻译：一种装置包括至少一个存储器件，其包括可操作地将磁场施加到存储器件的浮栅元件和磁场发生器。磁场将存储器件中的电子引导到浮动栅极元件中。

33. 发明申请

US20100124352A1 MICRO MAGNETIC DEVICE WITH MAGNETIC SPRING 审中-公开
标题翻译：具有磁性弹簧的微型磁性装置
公开(公告)号：US20100124352A1
公开(公告)日：2010-05-20
申请号：US12270966
申请日：2008-11-14
申请人： Insik Jin , Dadi Setiadi , Yong Lu , Jun Zheng
发明人： Insik Jin , Dadi Setiadi , Yong Lu , Jun Zheng
IPC分类号： H04R1/00
CPC分类号： H04R13/00 , H04R2201/003
摘要： A micro magnetic device having a body defining at least part of an enclosed chamber, the body comprising a first sidewall and a second sidewall. A pole comprising a soft magnetic material is within the chamber and an electrically conductive coil is positioned around the pole. A diaphragm is connected to the first sidewall and a permanent dipole magnet is connected to the second sidewall at a first end and to the diaphragm at a second end. The dipole magnet is offset centrally from the pole. The diaphragm may also be offset centrally from the first pole. The micro magnetic device may be made by MEMS or thin film techniques.
摘要翻译：一种具有限定至少一部分封闭室的主体的微型磁性装置，该主体包括第一侧壁和第二侧壁。包括软磁性材料的极点在腔室内，并且导电线圈围绕极点定位。隔膜连接到第一侧壁，并且永久偶极子磁体在第一端处连接到第二侧壁并在第二端连接到隔膜。偶极子磁体从极点中心偏移。隔膜也可以从第一极中心偏移。微型磁性器件可以由MEMS或薄膜技术制成。

34. 发明申请

US20100123210A1 ASYMMETRIC BARRIER DIODE 有权
标题翻译：不对称障碍二极管
公开(公告)号：US20100123210A1
公开(公告)日：2010-05-20
申请号：US12272912
申请日：2008-11-18
申请人： Insik Jin , Wei Tian , Venugopalan Vaithyanathan , Cedric Bedoya , Markus Siegert
发明人： Insik Jin , Wei Tian , Venugopalan Vaithyanathan , Cedric Bedoya , Markus Siegert
IPC分类号： H01L29/861
CPC分类号： H01L45/00
摘要： A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode.
摘要翻译：具有参考电压电极，可变电压电极和电极之间的二极管材料的二极管。二极管材料由至少一个高K电介质材料形成，并且在参考电压电极和可变电压电极之间具有不对称能量势垒，其中能量势垒具有靠近参考电压电极的相对最大的能量势垒级别，并且最小值靠近可变电压电极的能量级别。

35. 发明申请

US20100117051A1 MEMORY CELLS INCLUDING NANOPOROUS LAYERS CONTAINING CONDUCTIVE MATERIAL 失效
标题翻译：包含导电材料的纳米层的记忆细胞
公开(公告)号：US20100117051A1
公开(公告)日：2010-05-13
申请号：US12269507
申请日：2008-11-12
申请人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
发明人： Wei Tian , Venkatram Venkatasamy , Ming Sun , Michael Xuefei Tang , Insik Jin , Dimitar V. Dimitrov
IPC分类号： H01L47/00 , H01L21/44
CPC分类号： H01L27/2472 , H01L21/76816 , H01L23/5226 , H01L27/228 , H01L27/2436 , H01L43/08 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1273 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L2221/1047 , H01L2924/0002 , H01L2924/00
摘要： A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer.
摘要翻译：一种存储单元，包括具有第一表面和相对的第二表面的第一触点; 具有第一表面和相对的第二表面的第二触点; 存储材料层，其具有第一表面和相对的第二表面; 以及具有第一表面和相对的第二表面的纳米多孔层，所述纳米多孔层包括至少一个纳米孔和介电材料，所述至少一个纳米孔基本上填充有导电金属，其中所述纳米多孔层的表面与第一接触面或第二接触面的表面和纳米多孔层的第二表面与记忆材料层的表面接触。

36. 发明申请

US20100102289A1 NONVOLATILE RESISTIVE MEMORY DEVICES 失效
标题翻译：非易失性电阻记忆体装置
公开(公告)号：US20100102289A1
公开(公告)日：2010-04-29
申请号：US12606681
申请日：2009-10-27
申请人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
发明人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.
摘要翻译：公开了非易失性电阻性存储器件。在一些实施例中，存储器件包括包括电极，一个或多个电阻存储层和分离层的多层结构。分离层使电阻存储层绝缘，以防止来自存储层的电荷泄漏并允许使用薄的电阻存储层。在一些实施例中，非易失性电阻性存储器件包括金属层，其包括围绕中间层的两个金属层。在中间层和金属层的界面处的掺杂剂可在多层内提供可切换的电场。

37. 发明申请

US20090289736A1 MAGNETIC SWITCHES FOR SPINWAVE TRANSMISSION 审中-公开
标题翻译：用于旋转传动的磁力开关
公开(公告)号：US20090289736A1
公开(公告)日：2009-11-26
申请号：US12125974
申请日：2008-05-23
申请人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
发明人： Haiwen Xi , Dadi Setiadi , Insik Jin , Yang Li , Song Xue
IPC分类号： H01P1/10 , H01H53/00
CPC分类号： H01H59/0009 , H01H57/00
摘要： Spinwave transmission systems that include switching devices to direct the transmission of the spinwaves used for data transfer and processing. In one particular embodiment, a system for spinwave transmission has a first magnetic stripe configured for transmission of a spinwave and a second magnetic stripe for transmission of the spinwave, with a gap therebetween. The system includes a coupler that has a first orientation and a second orientation, where in the first orientation, no magnetic connection is made between the magnetic stripes, and in the second orientation, a connection is made between the magnetic stripes. The connection allows transmission of the spinwave from the first magnetic stripe to the second magnetic stripe. The first and second orientation may be the physical position of the coupler, moved by thermal, piezoelectric, or electrostatic forces, or, the first and second orientation may be a magnetic state of the coupler.
摘要翻译：旋转波传输系统包括用于引导用于数据传输和处理的旋转波的传输的开关装置。在一个具体实施例中，用于旋转波传输的系统具有被配置为用于传输旋转波的第一磁条和用于传播旋转波的第二磁条，其间具有间隙。该系统包括具有第一取向和第二取向的耦合器，其中在第一取向中，在磁条之间不形成磁连接，并且在第二取向中，在磁条之间形成连接。该连接允许将旋转波从第一磁条传输到第二磁条。第一和第二取向可以是耦合器的物理位置，通过热，压电或静电力移动，或者第一和第二取向可以是耦合器的磁状态。

38. 发明申请

US20090283816A1 BAND ENGINEERED HIGH-K TUNNEL OXIDES FOR NON-VOLATILE MEMORY 有权
标题翻译：用于非易失性存储器的BAND工程高K隧道氧化物
公开(公告)号：US20090283816A1
公开(公告)日：2009-11-19
申请号：US12120715
申请日：2008-05-15
申请人： Wei Tian , Insik Jin , Dimitar V. Dimitrov , Song S. Xue
发明人： Wei Tian , Insik Jin , Dimitar V. Dimitrov , Song S. Xue
IPC分类号： H01L29/788
CPC分类号： H01L29/792
摘要： A non-volatile memory cell that has a charge source region, a charge storage region, and a crested tunnel barrier layer that has a potential energy profile which peaks between the charge source region and the charge storage region. The tunnel barrier layer has multiple high-K dielectric materials, either as individual layers or as compositionally graded materials.
摘要翻译：具有电荷源区域，电荷存储区域和具有在电荷源区域和电荷存储区域之间峰值的势能分布的波峰隧道势垒层的非易失性存储单元。隧道势垒层具有多个高K电介质材料，无论是单独层还是成分分级材料。

39. 发明申请

US20090268352A1 ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT 有权
标题翻译： ST-RAM磁性元件配置降低开关电流
公开(公告)号：US20090268352A1
公开(公告)日：2009-10-29
申请号：US12108706
申请日：2008-04-24
申请人： Dexin Wang , Dimitar V. Dimitrov , Song S. Xue , Insik Jin
发明人： Dexin Wang , Dimitar V. Dimitrov , Song S. Xue , Insik Jin
IPC分类号： G11B5/33
CPC分类号： H01F10/3254 , B82Y25/00 , H01F10/3259 , H01F10/3272 , H01F10/3286
摘要： In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer.
摘要翻译：为了提高自旋转移的效率，从而降低所需的开关电流，与存储器件的平面（CPP）磁性元件垂直的电流包括具有电子反射表面的自由磁性层中的一个或两个，以及永磁体层具有垂直各向异性以偏置自由磁性层。

40. 发明授权

US08519376B2 Nonvolatile resistive memory devices 失效
标题翻译：非易失性电阻式存储器件
公开(公告)号：US08519376B2
公开(公告)日：2013-08-27
申请号：US12606681
申请日：2009-10-27
申请人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
发明人： Dimitar Velikov Dimitrov , Insik Jin , Haiwen Xi
IPC分类号： H01L27/26
CPC分类号： G11C13/0007 , G11C2213/15 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/77 , H01L27/2472 , H01L45/08 , H01L45/10 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/147
摘要： Nonvolatile resistive memory devices are disclosed. In some embodiments, the memory devices comprise multilayer structures including electrodes, one or more resistive storage layers, and separation layers. The separation layers insulate the resistive storage layers to prevent charge leakage from the storage layers and allow for the use of thin resistive storage layers. In some embodiments, the nonvolatile resistive memory device includes a metallic multilayer comprising two metallic layers about an interlayer. A dopant at an interface of the interlayer and metallic layers can provide a switchable electric field within the multilayer.
摘要翻译：公开了非易失性电阻性存储器件。在一些实施例中，存储器件包括包括电极，一个或多个电阻存储层和分离层的多层结构。分离层使电阻存储层绝缘，以防止来自存储层的电荷泄漏并允许使用薄的电阻存储层。在一些实施例中，非易失性电阻性存储器件包括金属层，其包括围绕中间层的两个金属层。在中间层和金属层的界面处的掺杂剂可在多层内提供可切换的电场。

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