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31. 发明授权

US07065124B2 Electron affinity engineered VCSELs 有权
标题翻译：电子亲和性工程VCSELs
公开(公告)号：US07065124B2
公开(公告)日：2006-06-20
申请号：US10767920
申请日：2004-01-29
申请人： James R. Biard , Ralph H. Johnson , Klein L. Johnson
发明人： James R. Biard , Ralph H. Johnson , Klein L. Johnson
IPC分类号： H01S3/08 , H01S5/00
CPC分类号： H01S5/18358 , H01S5/0421 , H01S5/18308 , H01S5/2009 , H01S5/205 , H01S5/3211 , H01S5/423 , H01S2301/166
摘要： A VCSEL having an N-type Bragg mirror with alternating layers of high bandgap (low index) and low bandgap (high index) layers of AlGaAs. The layers may be separated by a step change of Al composition followed by a graded region, and vice versa for the next layer, in the N-type mirror to result in a lower and more linear series resistance. Also, an N-type spacer layer may be adjacent to an active region of quantum wells. There may be a similar step in a change of Al composition from the nearest layer of the N-type mirror to the N-type spacer formed from a lower bandgap direct AlGaAs layer to provide lower free carrier absorption. With electron affinity engineering, a minority carrier hole barrier may be inserted adjacent to the quantum wells to improve hole confinement at high current density and high temperature.
摘要翻译：具有具有高带隙（低折射率）和低带隙（高折射率）AlGaAs层的交替层的N型布拉格反射镜的VCSEL。这些层可以通过Al组分的阶跃变化和随后的渐变区域分离，反之亦然，在N型反射镜中可以产生较低和更线性的串联电阻。此外，N型间隔层可以与量子阱的有源区相邻。从最近的N型反射镜层到由较低带隙的直接AlGaAs层形成的N型间隔物的Al组成变化可能有类似的步骤，以提供较低的自由载流子吸收。通过电子亲和力工程，可以在量子阱附近插入少数载流子阱屏障，以在高电流密度和高温下改善孔隙限制。

32. 发明授权

US07058112B2 Indium free vertical cavity surface emitting laser 失效
公开(公告)号：US07058112B2
公开(公告)日：2006-06-06
申请号：US10026044
申请日：2001-12-27
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S3/08
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3211 , H01S5/32358 , H01S5/32366 , H01S5/34306 , H01S5/34346
摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL), can include at least one quantum well comprised of GaAsSb; barrier layers sandwiching said at least one quantum well; and confinement layers sandwiching said barrier layers. Barrier and confinement layers can comprise of AlGaAs. Barrier layers can also be comprised of GaAsP. Nitrogen can be placed in quantum wells. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.

33. 发明授权

US06922426B2 Vertical cavity surface emitting laser including indium in the active region 失效
标题翻译：在活性区域中包括铟的垂直空腔表面发射激光器
公开(公告)号：US06922426B2
公开(公告)日：2005-07-26
申请号：US10026055
申请日：2001-12-20
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S5/183 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/3211 , H01S5/32366 , H01S5/34306 , H01S5/34313 , H01S5/34353
摘要： Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser is described that includes at least one quantum well comprised of InGaAs; GaAsN barrier layers sandwiching said at least one quantum well; and GaAsN confinement layers sandwiching said barrier layers. GaAsN barrier layers sandwiching the quantum well and AlGaAs confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. AlGaAs barrier layers sandwiching the at least one quantum well and GaAsN confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.
摘要翻译：可以生长量子阱和相关屏障层，以包括放置在典型GaAs衬底内或周围的氮（N），铝（Al），锑（Sb），磷（P）和/或铟（In），以实现长波长VCSEL 性能，例如在1260至1650 nm范围内。根据本发明的特征，描述了包括由InGaAs组成的至少一个量子阱的垂直腔表面发射激光器; 夹持所述至少一个量子阱的GaAsN阻挡层; 和夹持所述阻挡层的GaAsN限制层。夹着量子阱的GaAsN阻挡层和夹持势垒层的AlGaAs限制层也可以设置有InGaAs量子阱。夹持至少一个量子阱的AlGaAs阻挡层和夹着阻挡层的GaAsN限制层也可以设置有InGaAs量子阱。量子阱的厚度可以达到并包括50埃。量子阱也可以开发深度至少40 meV。

34. 发明授权

US06738409B2 Current confinement, capacitance reduction and isolation of VCSELs using deep elemental traps 失效
标题翻译：使用深度元素阱的电流限制，电容降低和VCSEL的隔离
公开(公告)号：US06738409B2
公开(公告)日：2004-05-18
申请号：US10028303
申请日：2001-12-28
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S5183
CPC分类号： H01S5/18308 , H01S5/18358 , H01S5/2063 , H01S5/423
摘要： A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate.
摘要翻译：具有电流限制结构的VCSEL包括通过将铁（Fe）或铬（Cr）注入到诸如InP或GaAs的III-V族化合物中形成的深陷阱。有利地，VCSEL是在公共基板上生成的VCSEL阵列的一部分。

35. 发明申请

US20120236891A1 LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS 审中-公开
标题翻译：具有高铝和低铝的量子柱的激光器具有具有高铝和低含量的阻挡层的具有减少的行进
公开(公告)号：US20120236891A1
公开(公告)日：2012-09-20
申请号：US13423550
申请日：2012-03-19
申请人： Ralph H. Johnson , Jimmy Alan Tatum , Andrew N. MacInnes , Jerome K. Wade , Luke A. Graham
发明人： Ralph H. Johnson , Jimmy Alan Tatum , Andrew N. MacInnes , Jerome K. Wade , Luke A. Graham
IPC分类号： H01S5/183 , H01L33/04
CPC分类号： H01S5/3407 , B82Y20/00 , H01S5/0021 , H01S5/18311 , H01S5/34313 , H01S5/3436 , H01S5/34366 , H01S5/34373
摘要： A VCSEL can include: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bounding the one or more quantum well layers; and one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, wherein the quantum wells, barriers and transitional monolayers are substantially devoid of traps. The one or more transitional monolayers include GaP, GaAs, and/or GaAsP. Alternatively, the VCSEL can include two or more transitional monolayers of AlInGaAs with a barrier-side monolayer having lower In and higher Al compared to a quantum well side monolayer that has higher In and lower Al.
摘要翻译： VCSEL可以包括：具有（Al）InGaAs的一个或多个量子阱; 具有限定一个或多个量子阱层的Al（In）GaAs的两个或更多个量子阱屏障; 并且沉积在每个量子阱层和量子阱屏障之间的一个或多个过渡单层，其中量子阱，势垒和过渡单层基本上没有陷阱。一个或多个过渡单层包括GaP，GaAs和/或GaAsP。或者，与具有较高In和更低Al的量子阱侧单层相比，VCSEL可以包括两个或更多个AlInGaAs的过渡单层和具有较低In和更高Al的势垒侧单层。

36. 发明申请

US20110096803A1 ASYMMETRIC DBR PAIRS COMBINED WITH PERIODIC AND MODULATION DOPING TO MAXIMIZE CONDUCTION AND REFLECTIVITY, AND MINIMIZE ABSORPTION 有权
标题翻译：结合周期性和调制功能的不对称DBR配对以最大限度地提高导电性和反射性，并最小化吸收
公开(公告)号：US20110096803A1
公开(公告)日：2011-04-28
申请号：US11963365
申请日：2007-12-21
申请人： Ralph H. Johnson , James Guenter
发明人： Ralph H. Johnson , James Guenter
IPC分类号： H01S5/183 , H01L33/46
CPC分类号： H01S5/18361 , H01L33/0045 , H01L33/105 , H01S5/0425 , H01S5/18344 , H01S5/305 , H01S5/3054 , H01S5/3077
摘要： An optical device for improving conduction and reflectivity and minimizing absorption. The optical device includes a first mirror comprising a first plurality of mirror periods designed to reflect an optical field at a predetermined wavelength, where the optical field has peaks and nulls. Each of the plurality of mirror periods includes a first layer of having a high carrier mobility, a second layer having lower carrier mobility, and a first compositional ramp between the first and second layers. The thicknesses of the first and second layers for at least a portion of the first plurality of mirror periods are established such that the nulls of the optical field occur within the first layer and not within the compositional ramp. At least the portion of the first layers within the first plurality of mirror periods include elevated doping concentrations at locations of the nulls of the optical field.
摘要翻译：用于改善传导和反射率并最小化吸收的光学装置。该光学装置包括第一反射镜，该第一反射镜包括被设计成反射预定波长的光场的第一多个反射镜周期，其中光场具有峰值和零点。多个反射镜周期中的每一个包括具有高载流子迁移率的第一层，具有较低载流子迁移率的第二层以及第一和第二层之间的第一组成斜面。第一和第二层的厚度对于第一多个反射镜周期的至少一部分被建立为使得光场的零点发生在第一层内而不在组成斜坡内。第一多个反射镜周期内的第一层的至少部分包括在光场的零点的位置处的升高的掺杂浓度。

37. 发明申请

US20110086452A1 SEMICONDUCTOR HAVING ENHANCED CARBON DOPING 有权
标题翻译：具有增强碳掺杂的半导体
公开(公告)号：US20110086452A1
公开(公告)日：2011-04-14
申请号：US12973754
申请日：2010-12-20
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L33/60
CPC分类号： H01S5/18308 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18358 , H01S5/305 , H01S5/3095
摘要： Methods for fabricating semiconductors with enhanced strain. One embodiment includes fabrication of a semiconductor device with an epitaxial structure. The epitaxial structure is formed with one or more semiconductor layers. One or more of the layers includes a dopant including small quantities of Al and repeated delta doping during expitaxial growth to form periods where surfaces are group III rich.
摘要翻译：制造具有增强应变的半导体的方法。一个实施例包括制造具有外延结构的半导体器件。外延结构由一个或多个半导体层形成。层中的一个或多个包括在外延生长期间包含少量Al和重复δ掺杂的掺杂剂，以形成表面为III族富集的时期。

38. 发明申请

US20110049471A1 EFFICIENT CARRIER INJECTION IN A SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件中有效的载流子注入
公开(公告)号：US20110049471A1
公开(公告)日：2011-03-03
申请号：US12941940
申请日：2010-11-08
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L33/06
CPC分类号： H01L29/201 , H01L33/06 , H01L33/30 , H01S5/0421 , H01S5/18308 , H01S5/3211
摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
摘要翻译：制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

39. 发明授权

US07829912B2 Efficient carrier injection in a semiconductor device 有权
标题翻译：在半导体器件中有效的载流子注入
公开(公告)号：US07829912B2
公开(公告)日：2010-11-09
申请号：US11735993
申请日：2007-04-16
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01L31/167
CPC分类号： H01L29/201 , H01L33/06 , H01L33/30 , H01S5/0421 , H01S5/18308 , H01S5/3211
摘要： Semiconductor devices such as VCSELs, SELs, LEDs, and HBTs are manufactured to have a wide bandgap material near a narrow bandgap material. Electron injection is improved by an intermediate structure positioned between the wide bandgap material and the narrow bandgap material. The intermediate structure is an inflection, such as a plateau, in the ramping of the composition between the wide bandgap material and the narrow bandgap material. The intermediate structure is highly doped and has a composition with a desired low electron affinity. The injection structure can be used on the p-side of a device with a p-doped intermediate structure at high hole affinity.
摘要翻译：制造诸如VCSEL，SEL，LED和HBT的半导体器件在窄带隙材料附近具有宽带隙材料。通过位于宽带隙材料和窄带隙材料之间的中间结构来改善电子注入。中间结构是在宽带隙材料和窄带隙材料之间的组成的斜坡中的拐点，例如平台。中间结构是高度掺杂的并且具有期望的低电子亲和力的组成。注入结构可以在具有高孔亲和力的p掺杂中间结构的器件的p侧上使用。

40. 发明授权

US07483462B2 Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells 失效
标题翻译：在GaAsN势垒层和InGaAsN量子阱中使用Sb的长波长VCSEL有源区
公开(公告)号：US07483462B2
公开(公告)日：2009-01-27
申请号：US10836176
申请日：2004-04-30
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/183 , H01S5/32366 , H01S5/3406 , H01S5/34306
摘要： Disclosed is a structure for an active region of a GaAs based VCSEL with strong optical output substantially within the range of 1.3 μm and potentially for the 1.5 um range, making it well suited for the transmissivity of silica core fiberoptics. The active region of the VCSEL incorporates antimony in the quantum wells and portions of the barriers. The presence of Sb substantially smooths the surface of the barriers and quantum wells during the process of beam epitaxy, causing a higher critical thickness of each of the layers, thereby enabling fabrication with significantly reduced defects.
摘要翻译：公开了一种基于GaAs的VCSEL的有源区的结构，其具有基本上在1.3μm范围内的强光学输出，并且潜在地为1.5μm的范围，使得其非常适合于硅芯光纤的透射率。 VCSEL的有源区域在量子阱和屏障的一部分中并入锑。在光束外延过程中，Sb的存在使得势垒和量子阱的表面基本上平滑，从而导致每个层的更高的临界厚度，从而能够以显着减少的缺陷进行制造。

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