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31. 发明申请

US20060038195A1 Light-emitting diode and the manufacturing method of the same 审中-公开
标题翻译：发光二极管及其制造方法相同
公开(公告)号：US20060038195A1
公开(公告)日：2006-02-23
申请号：US11254691
申请日：2005-10-21
申请人： Shyi-Ming Pan , Jenq-Dar Tsay , Ru-Chin Tu , Jung-Tsung Hsu
发明人： Shyi-Ming Pan , Jenq-Dar Tsay , Ru-Chin Tu , Jung-Tsung Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32
摘要： The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.
摘要翻译：该说明书公开了一种发光二极管及相应的制造方法。在衬底的表面上形成具有倾斜表面的GaN厚膜。使用GaN外延的性质自然地形成外延倾斜表面。在GaN厚膜上生长LED结构以形成LED器件。该公开的方法和装置可以简化制造过程。本发明进一步使用GaN厚膜外延性制造具有多个倾斜表面和不同结构的各种LED芯片。由于用于在芯片上发射光的表面积增加并且多个倾斜表面减小了内部反射的机会，所以本发明的发光效率比现有技术好得多。

32. 发明授权

US08188493B2 Light emitting diode with independent electrode patterns 有权
标题翻译：具有独立电极图案的发光二极管
公开(公告)号：US08188493B2
公开(公告)日：2012-05-29
申请号：US12959398
申请日：2010-12-03
申请人： Fang-I Li , Wei-Kang Cheng , Chih-Hsuan Lu , Yi-Sheng Ting , Shyi-Ming Pan
发明人： Fang-I Li , Wei-Kang Cheng , Chih-Hsuan Lu , Yi-Sheng Ting , Shyi-Ming Pan
IPC分类号： H01L33/38
CPC分类号： H01L33/38
摘要： Abstract of DisclosureA light emitting diode includes a substrate, an N-doped layer disposed on the substrate, a plurality of cathodes disposed between the N-doped layer and the substrate, an active layer disposed on the N-doped layer, a P-doped layer disposed on the active layer, and a plurality of anodes disposed on the P-doped layer. The cathodes are electrically connected to the N-doped layer, and the patterns of the cathodes are disconnected from each other. The anodes are electrically connected to the P-doped layer, and the patterns of the anodes are disconnected from each other. Each cathode and a corresponding anode form a loop, and each loop is an independent loop.
摘要翻译：发明内容发光二极管包括衬底，设置在衬底上的N掺杂层，设置在N掺杂层和衬底之间的多个阴极，设置在N掺杂层上的有源层，P- 掺杂层设置在有源层上，多个阳极设置在P掺杂层上。阴极电连接到N掺杂层，并且阴极的图案彼此断开。阳极电连接到P掺杂层，并且阳极的图案彼此断开。每个阴极和相应的阳极形成一个环，每个环是一个独立的环。

33. 发明授权

US07476912B2 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US07476912B2
公开(公告)日：2009-01-13
申请号：US11409003
申请日：2006-04-24
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

34. 发明申请

US20080241979A1 Multi-directional light scattering LED and manufacturing method thereof 有权
标题翻译：多向光散射LED及其制造方法
公开(公告)号：US20080241979A1
公开(公告)日：2008-10-02
申请号：US12149288
申请日：2008-04-30
申请人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
发明人： Cheng-Kuo Huang , Shyi-Ming Pan , Yun-Li Li , Huan-Che Tseng , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.
摘要翻译：公开了一种多向光散射LED及其制造方法。金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。第一电极安装在散射层上。因此，来自LED的光输出在多方向上散射。

35. 发明申请

US20060118806A1 LIGHT EMITTING DIODE PACKAGE 审中-公开
标题翻译：发光二极管封装
公开(公告)号：US20060118806A1
公开(公告)日：2006-06-08
申请号：US10907192
申请日：2005-03-24
申请人： Shyi-Ming Pan , Tsung-Chieh Lin , Fen-Ren Chien
发明人： Shyi-Ming Pan , Tsung-Chieh Lin , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： A light emitting diode (LED) package including a chip carrier, an adhesive layer, a light emitting diode (LED) chip and an anti-aging layer is provided. The adhesive is disposed on the chip carrier. The LED chip having a light emitting layer is adhered on the chip carrier by the adhesive layer, and is electrically connected with the chip carrier. The anti-aging layer is disposed between the adhesive and the chip carrier. In the LED package described above, the light emitted from the LED being illuminated on the adhesive layer is reduced or prevented by the anti-aging layer. Therefore, the aging phenomenon of the LED package is retarded, and the lifetime of the LED package is further enhanced.
摘要翻译：提供了包括芯片载体，粘合剂层，发光二极管（LED）芯片和抗老化层的发光二极管（LED）封装。粘合剂设置在芯片载体上。具有发光层的LED芯片通过粘合剂层粘附在芯片载体上，并与芯片载体电连接。抗老化层设置在粘合剂和芯片载体之间。在上述LED封装中，通过防老化层减少或防止从被照射在粘合剂层上的LED发出的光。因此，LED封装的老化现象被延迟，并且LED封装的寿命进一步提高。

36. 发明申请

US20100270566A1 LIGHT EMITTING DEVICE WITH SELECTIVE REFLECTION FUNCTION 审中-公开
标题翻译：具有选择性反射功能的发光装置
公开(公告)号：US20100270566A1
公开(公告)日：2010-10-28
申请号：US12543681
申请日：2009-08-19
申请人： Wei-Kang CHENG , Yi-Sheng Ting , Shyi-Ming Pan
发明人： Wei-Kang CHENG , Yi-Sheng Ting , Shyi-Ming Pan
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L25/0753 , H01L33/507 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device with selective reflection function being applied to general light emitting device and AC-type light emitting device is revealed. The light emitting device includes at least one vertical light emitting unit, at least one selective reflection layer and a phosphor layer. The selective reflection layer is disposed over the vertical light emitting unit and the phosphor layer is arranged over the selective reflection layer. Thus first colored light from the vertical light emitting unit passes the selective reflection layer and then to be converted into second colored light by the phosphor layer. The selective reflection layer reflects the second colored light while the first colored light is mixed with the second colored light to form mixing colored light. By the selective reflection layer that prevents the second colored light emitting into the light emitting unit, the lighting efficiency of the light emitting device is enhanced.
摘要翻译：具有选择反射功能的发光装置被应用于一般的发光装置和AC型发光装置。发光器件包括至少一个垂直发光单元，至少一个选择反射层和荧光体层。选择反射层设置在垂直发光单元上方，荧光层设置在选择反射层上。因此，来自垂直发光单元的第一着色光通过选择反射层，然后被荧光体层转换成第二色光。选择反射层反射第二有色光，同时第一着色光与第二有色光混合，形成混色色光。通过防止第二有色光发射到发光单元中的选择性反射层，提高了发光装置的发光效率。

37. 发明申请

US20060199290A1 Light Emitting Semiconductor Bonding Structure And Method Of Manufacturing The Same 有权
标题翻译：发光半导体结合结构及其制造方法
公开(公告)号：US20060199290A1
公开(公告)日：2006-09-07
申请号：US11380209
申请日：2006-04-26
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L21/00 , H01J29/80 , H01L21/30
CPC分类号： H01L25/167 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/16
摘要： Disclosed is a light emitting semiconductor bonding structure and its manufacturing method. The light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. The first metallic layer and the second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer cooperate with the N electrode layer and the P electrode layer of the light emitting semiconductor respectively, such that the first metallic layer and the second metallic layer correspond to and are bonded onto the N electrode layer and the P electrode layer respectively through the supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.
摘要翻译：公开了一种发光半导体接合结构及其制造方法。发光半导体接合结构包括通过将衬底接合到发光半导体上而形成的结构。基板是包含电路的结构。欧姆接触N电极层和P电极层分别形成在发光半导体的N型接触层和P型接触层上。第一金属层和第二金属层通过浸镀或沉积形成在基板的表面上。金属层电连接到基板的电路的相应的电信号输入/输出节点。第一金属层和第二金属层分别与发光半导体的N电极层和P电极层配合，使得第一金属层和第二金属层对应于并结合到N电极层上，并且 P电极层分别通过超声波焊接，并且因此将发光半导体结合到基板上，从而实现其间的电连接。

38. 发明申请

US20060081859A1 Light emitting semiconductor bonding structure and method of manufacturing the same 审中-公开
标题翻译：发光半导体结合结构及其制造方法
公开(公告)号：US20060081859A1
公开(公告)日：2006-04-20
申请号：US10966537
申请日：2004-10-15
申请人： Shyi-Ming Pan , Fen-Ren Chien
发明人： Shyi-Ming Pan , Fen-Ren Chien
IPC分类号： H01L33/00
CPC分类号： H01L25/167 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/16
摘要： Disclosed is a light emitting semiconductor bonding structure and its manufacturing method. The light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. The first metallic layer and the second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer cooperate with the N electrode layer and the P electrode layer of the light emitting semiconductor respectively, such that the first metallic layer and the second metallic layer correspond to and are bonded onto the N electrode layer and the P electrode layer respectively through the supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.
摘要翻译：公开了一种发光半导体接合结构及其制造方法。发光半导体接合结构包括通过将衬底接合到发光半导体上而形成的结构。基板是包含电路的结构。欧姆接触N电极层和P电极层分别形成在发光半导体的N型接触层和P型接触层上。第一金属层和第二金属层通过浸镀或沉积形成在基板的表面上。金属层电连接到基板的电路的相应的电信号输入/输出节点。第一金属层和第二金属层分别与发光半导体的N电极层和P电极层配合，使得第一金属层和第二金属层对应于并结合到N电极层上，并且 P电极层分别通过超声波焊接，并且因此将发光半导体结合到基板上，从而实现其间的电连接。

39. 发明授权

US06969627B2 Light-emitting diode and the manufacturing method of the same 有权
标题翻译：发光二极管及其制造方法相同
公开(公告)号：US06969627B2
公开(公告)日：2005-11-29
申请号：US10436133
申请日：2003-05-13
申请人： Shyi-Ming Pan , Jenq-Dar Tsay , Ru-Chin Tu , Jung-Tsung Hsu
发明人： Shyi-Ming Pan , Jenq-Dar Tsay , Ru-Chin Tu , Jung-Tsung Hsu
IPC分类号： H01L33/06 , H01L33/32 , H01L33/42 , H01L21/00
CPC分类号： H01L33/20 , H01L33/32
摘要： The specification discloses a light-emitting diode and the corresponding manufacturing method. A GaN thick film with a slant surface is formed on the surface of a substrate. An epitaxial slant surface is naturally formed using the properties of the GaN epitaxy. An LED structure is grown on the GaN thick film to form an LED device. This disclosed method and device can simplify the manufacturing process. The invention further uses the GaN thick film epitaxial property to make various kinds of LED chips with multiple slant surfaces and different structures. Since the surface area for emitting light on the chip increases and the multiple slant surfaces reduce the chances of total internal reflections, the light emission efficiency of the invention is much better than the prior art.
摘要翻译：该说明书公开了一种发光二极管及相应的制造方法。在衬底的表面上形成具有倾斜表面的GaN厚膜。使用GaN外延的性质自然地形成外延倾斜表面。在GaN厚膜上生长LED结构以形成LED器件。该公开的方法和装置可以简化制造过程。本发明进一步使用GaN厚膜外延性制造具有多个倾斜表面和不同结构的各种LED芯片。由于用于在芯片上发射光的表面积增加并且多个倾斜表面减小了内部反射的机会，所以本发明的发光效率比现有技术好得多。

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